Abstract: A sensor package includes a packaging formed by a package bottom, first and second sidewalls extending upwardly from first and second opposite sides of the package bottom, and third and fourth sidewalls extending upwardly from third and fourth opposite sides of the package bottom, the sidewalls and package bottom defining a cavity. An integrated circuit is attached to the package bottom. A plate extends between two of the sidewalls within the cavity and is spaced apart from the package bottom. Sensors are attached to a top surface of the plate on opposite sides of an opening. Wire bondings electrically connect pads on a top face of the sensor to corresponding pads on a top face of the integrated circuit, for example by passing through the opening in the plate or passing past a side end of the plate. A lid extends across and between the sidewalls to close the cavity.

Abstract: An integrated electronic system is provided with a package formed by a support base and a coating region arranged on the support base and having at least a first system die, including semiconductor material, coupled to the support base and arranged in the coating region. The integrated electronic system also has, within the package, a monitoring system configured to determine the onset of defects within the coating region, through the emission of acoustic detection waves and the acquisition of corresponding received acoustic waves, whose characteristics are affected by, and therefore are indicative of, the aforementioned defects.

Abstract: A device includes a memory and cryptographic processing circuitry coupled to the memory. The memory, in operation, stores one or more lookup tables. The cryptographic processing circuitry, in operation, processes masked data and protects the processing of masked data against side channel attacks. The protecting includes applying masked binary logic operations to masked data using lookup tables of the one or more lookup tables.

Abstract: The present disclosure concerns an electronic device formed inside and on top of a monolithic semiconductor substrate having a surface covered with a gallium nitride layer, comprising at least one e-mode type HEMT power transistor adapted to receiving a maximum voltage of 650 V between its drain and its source, and an analog circuit for controlling said power transistor.

Abstract: The present disclosure concerns overtemperature protection circuit formed inside and on top of a monolithic semiconductor substrate having a surface covered with a gallium nitride layer, comprising: a first resistor having a first positive temperature coefficient and being arranged in said gallium nitride layer; and a second resistor having a second temperature coefficient different from the first coefficient.

Abstract: A method corrects an ionospheric error affecting pseudo-range measurements in a GNSS receiver receiving a plurality of satellite signals from a plurality of satellites of the constellation of satellites. The method is performed in a navigation processing procedure performed at a GNSS receiver, receiving pseudo-range measurements previously calculated by the GNSS receiver obtained from a first carrier signal and a second carrier signal in the satellite signals, in particular in GPS bands L1 and L5. The method includes performing a correction procedure of the pseudo-range measurements including applying to the pseudo-range measurements corrections for predictable errors obtaining corrected pseudo-ranges and applying to the corrected pseudo-range measurements a further ionospheric error correction calculation to obtain further ionospheric error correction values.

Abstract: The present disclosure concerns a voltage regulation circuit formed inside and on top of a monolithic semiconductor substrate having a surface covered with a gallium nitride layer, comprising: between a first terminal and a second terminal, a first resistor and a first d-mode type HEMT transistor; and between the first terminal and the third terminal, a second d-mode type HEMT transistor; wherein the midpoint between the first resistor and the first transistor is coupled to the gates of the first and second transistors.

Abstract: An HV MOSFET device has a body integrating source conductive regions. Projecting gate structures are disposed above the body, laterally offset with respect to the source conductive regions. Source contact regions, of a first metal, are arranged on the body in electric contact with the source conductive regions, and source connection regions, of a second metal, are arranged above the source contact regions and have a height protruding with respect to the projecting gate structures. A package includes a metal support bonded to a second surface of the body, and a dissipating region, above the first surface of the semiconductor die. The dissipating region includes a conductive plate having a planar face bonded to the source connection regions and spaced from the projecting gate structures. A package mass of dielectric material is disposed between the support and the dissipating region and incorporates the semiconductor die. The dissipating region is a DBC-type insulation multilayer.

Abstract: The present disclosure concerns a driver of a first e-mode type HEMT power transistor adapted to receiving a maximum voltage of 650 V between its drain and its source, the circuit being formed inside and on top of a monolithic semiconductor substrate having a surface covered with a gallium nitride layer, and comprising at least a second e-mode type transistor adapted to directly transmitting a control voltage to the gate of the first transistor and having an area greater than 5 mm2.

Abstract: The present disclosure is directed to self-tests for electrostatic charge variation sensors. The self-tests ensure an electrostatic charge variation sensor is functioning properly. The self-tests may be performed while an electrostatic charge variation sensor is active and without interruption to the application employing the electrostatic charge variation sensor.

Abstract: A closed-loop microelectromechanical accelerometer includes a substrate of semiconductor material, an out-of-plane sensing mass and feedback electrodes. The out-of-plane sensing mass, of semiconductor material, has a first side facing the supporting body and a second side opposite to the first side. The out-of-plane sensing mass is also connected to the supporting body to oscillate around a non-barycentric fulcrum axis parallel to the first side and to the second side and perpendicular to an out-of-plane sensing axis. The feedback electrodes are capacitively coupled to the sensing mass and are configured to apply opposite electrostatic forces to the sensing mass.

Abstract: In providing electrical wire-like connections between at least one semiconductor die arranged on a semiconductor die mounting area of a substrate and an array of electrically-conductive leads in the substrate, pressure force is applied to the electrically-conductive leads in the substrate during bonding the wire-like connections to the electrically-conductive leads. Such a pressure force is applied to the electrically-conductive leads in the substrate via a pair of mutually co-operating force transmitting surfaces. These surfaces include a first convex surface engaging a second concave surface.

Abstract: The MEMS gyroscope is formed by a substrate, a first mass and a second mass, wherein the first and the second masses are suspended over the substrate and extend, at rest, in a plane of extension defining a first direction and a second direction transverse to the first direction. The MEMS gyroscope further has a drive structure coupled to the first mass and configured, in use, to cause a movement of the first mass in the first direction, and an elastic coupling structure, which extends between the first mass and the second mass and is configured to couple the movement of the first mass in the first direction with a movement of the second mass in the second direction. The elastic coupling structure has a first portion having a first stiffness and a second portion having a second stiffness greater than the first stiffness.

Abstract: An embodiment voltage converter includes a first transistor connected between a first node of the converter and a second node configured to receive a power supply voltage, a second transistor connected between the first node and a third node configured to receive a reference potential, a first circuit configured to control the first and second transistors, and a comparator including first and second inputs. The first input is configured to receive, during a first phase, a first voltage ramp and, during a second phase, a set point voltage. The second input is configured to receive, during the first phase, the set point voltage and, during the second phase, a second voltage ramp.

Abstract: A method for operating an electronic device, including: determining that a touchscreen is in a low frequency display (LFD) mode, determining whether a self-sensing scan was performed in a previous frame of a plurality of frames; after determining, a self-sensing scan was performed in the previous frame, determining a current duration of time corresponding to a current frame based on a previous duration of time corresponding to the previous frame, the previous frame being a frame immediately preceding the current frame; determining, whether the current duration of time is greater than the previous duration of time; and after determining that the current duration is greater than the previous duration, performing a self-sensing scan after the current duration of time, the current duration of time being measured from a beginning of the current frame, the current duration of time having a duration less than a duration of the current frame.

Abstract: In an embodiment, a device comprises a memory, which, in operation, stores data samples associated with a plurality of data sensors, and circuitry, coupled to the memory, wherein the circuitry, in operation, generates synchronized output data sets associated with the plurality of data sensors. Generating a synchronized output data set includes: determining a reference sample associated with a sensor of the plurality of sensors; verifying a timing validity of a data sample associated with another sensor of the plurality of sensors; identifying a closest-in-time data sample associated with the another sensor of the plurality of sensors with respect to the reference sample; and generating the synchronized output data set based on interpolation.

Abstract: Process for manufacturing a MEMS device, including: forming a dielectric region which coats part of a semiconductive substrate of a first semiconductive wafer; forming a region which is permeable to gases and coats the dielectric region; coupling the first semiconductive wafer to a second semiconductive wafer so as to form a first chamber, which houses a first movable mass and has a pressure equal to a first value, and a second chamber, which houses a second movable mass and has a pressure equal to the first value, the permeable region facing the second chamber; selectively removing a portion of the semiconductor substrate and an underlying portion of the dielectric region, so as to expose a part of the permeable region, so as to allow gas exchanges through the permeable region; placing the first and the second semiconductive wafers in an environment with a pressure equal to a second value, so that the pressure in the second chamber becomes equal to the second value; and subsequently forming, on the exposed p

Abstract: A MEMS device is provided that includes a semiconductor substrate including a main surface extending perpendicular to a first direction and a side surface extending on a plane parallel to the first direction and to a second direction that is perpendicular to the first direction. At least one cantilevered member protrudes from the side surface of the semiconductor substrate along a third direction that is perpendicular to the first and second directions. The at least one cantilevered member includes a body portion that includes a piezoelectric material. The body portion has a length along the third direction, a height along the first direction and a width along the second direction, and the height is greater than the width. The at least one cantilevered member is configured to vibrate by lateral bending along a direction perpendicular to the first direction.

Abstract: An integrated circuit includes a current mode transmitter having a first driver and a second driver. The first driver receives a single bit data stream. The second driver receives a delayed data stream corresponding to the single bit data stream delayed by a clock cycle. The current mode transmitter has a transition detector that generates a bulk modulation signal having a first value when the single bit data stream is the same as the delayed data stream and having a second value when the single bit data stream is different from the delayed data stream. The transition detector supplies the bulk modulation signal to the bulk terminals of driver switches of the first and second drivers.

Abstract: A method is for detecting one or more objects in a detection zone using a time-of-flight sensor. The method includes emitting optical radiation via the emission circuitry of the sensor and subsequently capturing the reflected optical radiation using the reception circuitry. This captured radiation is quantified in terms of photons, and measurement circuitry determines both the amount of these photons and the distance from the sensor to the object(s). An analysis of the photon count, combined with the calculated distance, is used to determine the presence or absence of objects within the detection zone.