Abstract: An amplification interface includes first and second differential input terminals, first and second differential output terminals providing first and second output voltages defining a differential output signal, and first and second analog integrators coupled between the first and second differential input terminals and the first and second differential output terminals, the first and second analog integrators being resettable by a reset signal. A control circuit generates the reset signal such that the first and second analog integrators are periodically reset during a reset interval and activated during a measurement interval, receives a control signal indicative of offsets in the measurement sensor current and the reference sensor current, and generates a drive signal as a function of the control signal. First and second current generators coupled first and second compensation circuits to the first and second differential input terminals as a function of a drive signal.

Abstract: Disclosed herein is an integrated component formed by a first wafer having first and second trenches defined in a top surface thereof, and a second wafer coupled to the first wafer and formed by a substrate with a structural layer thereon that integrated an electromagnetic radiation detector overlying the second trench. A first cap is coupled to the second wafer, overlies the electromagnetic radiation detector, and serves to define a first air-tight chamber in which the electromagnetic radiation detector is positioned. A stator, a rotor, and a mobile mass are integrated within the substrate and form a drive assembly for driving the mobile mass. The rotor overlies the first trench. A second cap is coupled to the second wafer, overlies the mobile mass, and serving to define a second air-tight chamber in which the mobile mass is positioned.

Abstract: A voltage converter delivers an output voltage between a first and a second node. The voltage converter includes a capacitor series-coupled with a resistor between the first and second nodes. The resistor is coupled in parallel with a bidirectional switch receiving at its control terminal a positive bias voltage referenced to the second node.

Abstract: A DC-DC switching converter includes power switches selectively coupling an output terminal with a first voltage or with a second voltage. A driver stage is coupled with the power switches for driving the power switches. A driver control stage is coupled with the driver stage for controlling the operation of the driver stage. An output current sensing circuit is coupled with the output terminal and with the driver control stage, and is configured to sense a sign of an output current delivered by the DC-DC switching converter at the output terminal and to generate control signals for the driver control stage. The driver control stage controls the operation of the driver stage according to states of the control signals received from the output current sensing circuit, for selectively delaying the activation of the power switches depending on the sensed sign of the output current.

Abstract: An integrated circuit includes a pulse width modulator. The pulse width modulator includes a multiplexer that receives a plurality of data delay signals. Each of the data delay signals is based on a data signal and a respective clock phase signal. The multiplexer includes a first multiplexer stage and a second multiplexer stage. The first multiplexer stage receives all of the data delay signals and has a relatively large delay. The second multiplexer stage receives to output signals from the first multiplexer stage and has a relatively small delay. The second multiplexer stage outputs a pulse width modulation signal that can have a pulse width corresponding to the offset between two adjacent clock phase signals.

Abstract: An optoelectronic device includes a substrate with a light emitter and a photodetector supported by the substrate. The light emitter and photodetector are stacked one on top of the other. At least one of the light emitter and photodetector is formed by a stack including the following order of layers: a first electrode layer, a hole transport layer, a quantum nano-structure layer (for example, a semiconductor nanoparticle layer, a quantum dot layer, a quantum rod layer or quantum well layer), an electron transport layer and a second electrode layer. An insulating layer is positioned between the light emitter and photodetector in the stack.

Abstract: An integrated circuit includes a junction field-effect transistor formed in a semiconductor substrate. The junction field-effect transistor includes a drain region, a source region, a channel region, and a gate region. A first isolating region separates the drain region from both the gate region and the channel region. A first connection region connects the drain region to the channel region by passing underneath the first isolating region in the semiconductor substrate. A second isolating region separates the source region from both the gate region and the channel region. A second connection region connects the source region to the channel region by passing underneath the second isolating region in the semiconductor substrate.

Abstract: An integrated circuit includes a memory array and a read voltage regulator that generates read voltages from the memory array. The read voltage regulator includes a replica memory cell and the replica bitline current path. The replica memory cell is a replica of memory cells of the memory array. The replica bitline current path is a replica of current paths associated with deadlines of the memory array. The read voltage regulator generates a read voltage based on the current passed through the replica bitline current path. This read voltage is then supplied to the wordlines of the memory array during a read operation.

Abstract: An H-bridge circuit includes a supply voltage node, a first pair of transistors and a second pair of transistors. First transistors in each pair have the current paths therethrough included in current flow lines between the supply node and, respectively, a first output node and a second output node. Second transistors in each pair have the current paths therethrough coupled to a third output node and a fourth output node, respectively. The first and third output nodes are mutually isolated from each other and the second and fourth output nodes are mutually isolated from each other. The H-bridge circuit is operable in a selected one of a first, second and third mode.

Abstract: A MOSFET device comprising: a structural region, made of a semiconductor material having a first type of conductivity, which extends between a first side and a second side opposite to the first side along an axis; a body region, having a second type of conductivity opposite to the first type, which extends in the structural region starting from the first side; a source region, having the first type of conductivity, which extends in the body region starting from the first side; a gate region, which extends in the structural region starting from the first side, traversing entirely the body region; and a shielding region, having the second type of conductivity, which extends in the structural region between the gate region and the second side. The shielding region is an implanted region self-aligned, in top view, to the gate region.

Abstract: A lead frame includes a die pad and electrical leads. An integrated circuit chip is mounted to the die pad. An encapsulating package has a perimeter defined by first, second, third and fourth sidewalls. The electrical leads extend from the opposed first and second sidewalls of the package. At least one sidewall of the opposed third and fourth sidewalls of the package includes a V-shaped concavity functioning to increase a creepage distance between the electrical leads at the opposed first and second sidewalls.

Abstract: A support substrate supports an electronic chip. An encapsulation coating on the support substrate coats the electronic chip. The encapsulation coating includes a trench surrounding the electronic chip. A heat sink is mounted to the encapsulation coating above the electronic chip. The heat sink is fixed to the encapsulation coating by an adhesive material and a thermal interface material layer is present between the electronic chip and the heat sink. The trench is positioned between the thermal interface material layer and the adhesive material.

Abstract: A semiconductor substrate has a front face with a first dielectric region. A capacitive element includes, on a surface of the first dielectric region at the front face, a stack of layers which include a first conductive region, a second conductive region and a third conductive region. The second conductive region is electrically insulated from the first conductive region by a second dielectric region. The second conductive region is further electrically insulated from the third conductive region by a third dielectric region. The first and third conductive regions form one plate of the capacitive element, and the second conductive region forms another plate of the capacitive element.

Abstract: An encapsulation hood is fastened onto electrically conductive zones of a support substrate using springs. Each spring has a region in contact with an electrically conductive path contained in the encapsulation hood and another region in contact with a corresponding one of the electrically conductive zones. The fastening of the part of the encapsulation hood onto the support substrate compresses the springs and further utilizes a bead of insulating glue located between the compressed springs.

Abstract: A control circuit for a voltage source generates a reference signal for a voltage source, wherein the reference signal indicates a requested output voltage to be generated by the voltage source. A digital feed-forward control circuit computes a digital feed-forward regulation value indicative of a requested output voltage by determining a maximum voltage drop at strings of solid-state light sources. A digital feed-back control circuit determines a minimum voltage drop for current regulators/limiters for the strings and determines a digital feed-back correction value as a function of the minimum voltage drop. The control circuit then sets the reference signal after a start-up as a function of the digital feed-forward regulation value and corrects the reference signal as a function of the digital feed-back correction value.

Abstract: A device for generating first clock signals includes first circuits, each including a ring oscillator delivering one of the first clock signals and being connected to a first node configured to receive a first current. A circuit selects one the first clock signals, and a phase-locked loop delivers a second signal which is a function of a difference between a frequency of the first selected clock signal and a set point frequency. Each first circuit supplies the first node with a compensation current determined by the second signal, when this first circuit delivers the selected clock signal and operates in controlled mode.

Abstract: A smart card includes a first circuit delivering a power supply voltage and a second circuit coupled to the first circuit by an electrical conductor and powered with the power supply voltage. A light-emitting diode has a first terminal coupled to the electrical conductor and a second terminal coupled to a first terminal of the second circuit. During a first operating phase, the first circuit delivers a first value of the power supply voltage and the second circuit applies a first voltage to the first terminal. During a second operating phase, the first circuit delivers a second value of the power supply voltage and the second circuit applies a second voltage to the first terminal.

Abstract: A charge pump circuit includes a first charge pump stage circuit coupled in series with a second charge pump stage circuit. A discharge circuit operates to discharge the charge pump circuit. The discharge circuit includes: a first switched circuit coupled to a first output of the first charge pump stage circuit and configured, when actuated, to discharge the first output; and a second switched circuit coupled to a second output of the second charge pump stage circuit and configured, when actuated, to discharge the second output. A discharge control circuit actuates the first switched discharge circuit to discharge the first output and then, after the first output is fully discharged, actuates the second switched discharge circuit to discharge the second output.

Abstract: The charge transfer transistors of a positive or negative charge pump are biased at their gate terminals with a control voltage that provides for an higher level of gate-to-source voltage in order to reduce switch resistance in passing a boosted (positive or negative) voltage to a voltage output of the charge pump. This control voltage is generated using a bootstrapping circuit whose polarity of operation (i.e., negative or positive) is opposite to a polarity (i.e., positive or negative) of the charge pump.

Abstract: In accordance with embodiments, methods and systems for a trigger to the KWS are provided. The computing device converts an audio signal into a plurality of audio frames. The computing device generates a Mel Frequency Cepstral Coefficients (MFCC) matrix. The MFCC matrix includes N columns. Each column of the N columns comprises coefficients associated with audio features corresponding to a different audio frame of the plurality of audio frames. The computing device determines that a trigger condition is satisfied based on an MFCC_0 buffer. The MFCC_0 buffer comprises a first row of the MFCC matrix. The computing device then provides the MFCC matrix to a neural network for the neural network to use the MFCC matrix to make keyword inference based on the determining that the trigger condition is satisfied.