Abstract: A memory cell that performs in-memory compute operations, includes a pair of cross-coupled inverters and a pair of transistors for selective performance of read/write/hold operations associated with logic states of the pair of cross-coupled inverters. The memory cell further includes a set of transistors that are gate coupled to and symmetrically arranged about the pair of cross coupled inverters. Output nodes of the memory cell are located at terminals of the set of transistors and provide output based on logic states of the pair of cross coupled inverters and input nodes provided between pairs of the set of transistors. A memory cell array may be generated having a high density arrangement memory cells that can perform in-memory compute operations. The memory cells can be arranged as a neural network including a set of memory cell networks that provide logic output operations based on logic states of the respective memory cells.

Abstract: In an embodiment, a method includes receiving in parallel first data and second data; and delivering in series the first and second data, where the first data comprises electric power delivery configuration data. In some embodiments, delivering in series the first and second data includes delivering the first and second data wirelessly.

Abstract: A control unit for a switching converter has an inductor element coupled to an input and a switch element coupled to the inductor element and generates a command signal having a switching period to switch the switch element and determine a first time period in which an inductor current is flowing in the inductor element for storing energy and a second time period in which energy is transferred to a load. An input current is distorted relative to a sinusoid by a distortion factor caused by current ripple on the inductor current. The duration of the first time period is determined based on a comparison between a peak value of the inductor current and a current reference that is a function of an output voltage of said voltage converter. A reference modification stage modifies one of the current reference and sensed value of the inductor current to compensate for distortion introduced by the distortion factor on the input current.

Abstract: The present disclosure relates to a device that includes a photodiode having a first terminal that is coupled by a resistor to a first rail configured to receive a high supply potential and a second terminal that is coupled by a switch to a second rail configured to receive a reference potential. A read circuit is configured to provide a pulse when the photodiode enters into avalanche, and a control circuit is configured to control an opening of the switch in response to a beginning of the pulse and to control a closing of the switch in response to an end of the pulse.

Abstract: A transmitter/receiver device include an antenna, a voltage source, a radio frequency receiver connected to the antenna and powered by the voltage source, a radio frequency transmitter connected to the antenna and powered by the voltage source, and a switch coupled to the antenna, the receiver and the transmitter and configured to couple/decouple the antenna from the transmitter or from the receiver. The antenna is shared between the transmitter and the receiver. The receiver includes a radio frequency stage that includes an amplifier device having an input coupled to the antenna. The amplifier device includes an amplifier switch configured to connect or disconnect the amplifier device from the voltage source.

Abstract: An antenna device is formed by a first electrically conductive spiral having a first end connected to a first node and a second end connected to a second node, and a second electrically conductive spiral having a first end connected to the second node and a second end connected to a third node. The first and second nodes are configured for connection to an NFC driver circuit, with the first electrically conductive spiral forming an antenna for near-field communication. The first and third nodes are configured for connection to a wireless power charging driver circuit, with the first electrically conductive spiral and second electrically conductive spiral forming an antenna for wireless power charging.

Abstract: An electronic chip includes a shared strip with first and second spaced apart portions extending along a direction of elongation and an intermediate connecting portion extending between the first and second portions. The second portion is connected to a pad that has a greater surface area than the second portion. The first portion is formed by a first plurality of metallic strips. Metallic strips of the first plurality of metallic strips that are adjacent and side by side are separated by a distance smaller than a width of those metallic strips. The second portion is formed by a second plurality of metallic strips. Metallic strips of the second plurality of metallic strips that are adjacent and side by side are separated by a distance smaller than a width of those metallic strips.

Abstract: A device including a transistor is fabricated by forming a first part of a first region of the transistor through the implantation of dopants through a first opening. The second region of the transistor is then formed in the first opening by epitaxy.

Abstract: An electro-acoustical transducer such as a Piezoelectric Micromachined Ultrasonic Transducers is coupled with an adjustable load circuit having a set of adjustable load parameters including resistance and inductance parameters. Starting from at least one resonance frequency or at least one ring-down parameter of the electro-acoustical transducer a set of model parameters is calculated for a Butterworth-Van Dyke (BVD) model of the electro-acoustical transducer. The BVD model includes an equivalent circuit network having a constant capacitance coupled to a RLC branch and the adjustable load circuit is coupled with the electro-acoustical transducer at an input port of the equivalent circuit network of the model of the electro-acoustical transducer. The adjustable load parameters are adjusted as a function of the set of model parameters calculated for the BVD model of the electro-acoustic transducer to increase the bandwidth or the sensitivity of the electro-acoustic transducer.

Abstract: A connector that is configured to receive a smart card includes: a first contact configured to receive a power supply voltage and corresponding to a first (power supply) contact area of the smart card, a second contact configured to receive a reference voltage and corresponding to contact a second (reference voltage) contact area of the smart card, and a third contact corresponding to a three-state (input/output) contact area of the smart card. A first light-emitting diode having an anode coupled to the third contact and a cathode coupled to the second contact. A second light-emitting diode has a cathode coupled to the third contact and an anode coupled to the first contact. Turning on/off of the first and second light-emitting diode is controlled by the smart card through the signal at the three-state (input/output) contact area.

Abstract: A MEMS device is formed in a die of semiconductor material having a cavity defined therein and having an anchorage portion. A tiltable structure is elastically suspended over the cavity and has a main extension in a horizontal plane. First and second supporting arms extend between the anchorage portion and opposite sides of the tiltable structure. First and second resonant piezoelectric actuation structures are intended to be biased to thereby cause rotation of the tiltable structure about a rotation axis. The first supporting arm is formed by first and second torsion springs, which are rigid to movements out of the horizontal plane and compliant to torsion about the rotation axis and are coupled together at a constraint region. The first and second resonant piezoelectric actuation structures extend between the anchorage portion and the constraint structure, on first and second sides of the first supporting arm.

Abstract: A memory cell includes a heating element topped with a phase-change material. Two first silicon oxide regions laterally surround the heating element along a first direction. Two second silicon oxide regions laterally surround the heating element along a second direction orthogonal to the first direction. Top surfaces of the heating element and the two first silicon oxide regions are coplanar such that the heating element and the two first silicon oxide regions have a same thickness.

Abstract: A PWM controlled multi-phase resonant voltage converter may include a plurality of primary windings powered through respective half-bridges, and as many secondary windings connected to an output terminal of the converter and magnetically coupled to the respective primary windings. The primary or secondary windings may be connected such that a real or virtual neutral point is floating.

Abstract: A register bank of a channel of a direct memory access circuit is initialized. Transfer cycles are executed as configured by the register bank, and updates are made to the registers from a memory. At each transfer cycle, an operation is performed in accordance with a first field of the register bank to either: carry on the execution or generate a first signal and suspend the execution. In response to each reception of the first signal by a central processing unit, an operation is performed to either: generate a second signal or modify the content of the register band and/or record into the memory a first item representative of a next update of the register bank. A second signal is then generated.

Abstract: An electronic component includes first and second separate semiconductor regions. A third semiconductor region is arranged under and between the first and second semiconductor regions. The first and third semiconductor regions define electrodes of a first diode. The second and third semiconductor regions define electrodes of a second diode. The first diode is an avalanche diode.

Abstract: A germanium waveguide is formed from a P-type silicon substrate that is coated with a heavily-doped N-type germanium layer and a first N-type doped silicon layer. Trenches are etched into the silicon substrate to form a stack of a substrate strip, a germanium strip, and a first silicon strip. This structure is then coated with a silicon nitride layer.

Abstract: An integrated circuit is protected against at attack. An electrically conductive body at floating potential is situated in the integrated circuit. The electrically conductive body has an initial amount of electric charge prior to the attack and functions to collect electric charge as a result of the attack. A detection circuit operates to detect an amount of electric charge collected on the electrically conductive body and determine whether the collected amount is different from the initial amount. If the detected amount of charge is different from the initial amount, a control circuit trigger the taking of a protective action.

Abstract: A MOSFET device includes a semiconductor body having a first and a second face. A source terminal of the MOSFET device includes a doped region which extends at the first face of the semiconductor body and a metal layer electrically coupled to the doped region. A drain terminal extends at the second face of the semiconductor body. The doped region includes a first sub-region having a first doping level and a first depth, and a second sub-region having a second doping level and a second depth. At least one among the second doping level and the second maximum depth has a value which is higher than a respective value of the first doping level and the first maximum depth. The metal layer is in electrical contact with the source terminal exclusively through the second sub-region.

Abstract: An electronic integrated circuit chip includes a first transistor arranged inside and on top of a solid substrate, a second transistor arranged inside and on top of a layer of semiconductor material on insulator having a first thickness, and a third transistor arranged inside and on top of a layer of semiconductor material on insulator having a second thickness. The second thickness is greater than the first thickness. The solid substrate extends underneath the layers of semiconductor material and is insulated from those layers by the insulator.

Abstract: A memory management circuit stores information indicative of reliability-types of regions of a memory array. The memory management circuitry responds to a request to allocate memory in the memory array to a process by determining a request type associated with the request to allocate memory. Memory of the memory array is allocated to the process based on the request type associated with the request to allocate memory and the stored information indicative of reliability-types of regions of the memory array. The memory array may be a shared memory array. The memory array may be organized into rows and columns, and the regions of the memory array may be the rows of the memory array.