Abstract: A phase-change memory cell includes, in at least a first portion, a stack of at least one germanium layer covered by at least one layer made of a first alloy of germanium, antimony, and tellurium In a programmed state, resulting from heating a portion of the stack to a sufficient temperature, portions of layers of germanium and of the first alloy form a second alloy made up of germanium, antimony, and tellurium, where the second alloy has a higher germanium concentration than the first alloy.

Abstract: A method for transmitting an IP data packet to an IP address associated with a host name is described. A first service message of a Short Message Service is transmitted to a Short Message Service gateway server. The first service message includes a host name resolution request for a host name. A second service message of the Short Message Service is received from the Short Message Service gateway server. The second service message includes an IP address associated with the host name. An IP data packet is transmitted to the IP address associated with the host name.

Abstract: A charge pump includes an intermediate node capacitively coupled to receive a first clock signal oscillating between a ground and positive supply voltage, the intermediate node generating a first signal oscillating between a first and second voltage. A level shifting circuit shifts the first signal in response to a second clock signal to generate a second signal oscillating between first and third voltages. A CMOS switching circuit includes a first transistor having a source coupled to an input, a second transistor having a source coupled to an output and a gate coupled to receive the second signal. A common drain of the CMOS switching circuit is capacitively coupled to receive the first clock signal. When positively pumping, the first voltage is twice the second voltage and the third voltage is ground. When negatively pumping, the first and third voltages are of opposite polarity and the second voltage is ground.

Abstract: A strain gauge includes first and second substrates spaced apart from one another. A first flexible printed circuit board portion is in contact with a top side of the first and second substrates, and has a first Wheatstone bridge formed therein. The first flexible printed circuit board portion positions the first Wheatstone bridge such that two resistors of the first Wheatstone bridge are positioned to span from the top side of the first substrate to the top side of the second substrate. A second flexible printed circuit board portion is in contact with a bottom side of the first and second substrates, and has a second Wheatstone bridge formed therein. The second flexible printed circuit board positions the second Wheatstone bridge such that two resistors of the second Wheatstone bridge are positioned to span from the bottom side of the first substrate to the bottom side of the second substrate.

Abstract: A semiconductor device includes a leadframe having a semiconductor chip arranged thereon and an electrically-insulating encapsulation molded onto the leadframe and the semiconductor chip. The leadframe is a pre-molded leadframe including a coupling surface having an alternation of electrically-conductive parts and insulating parts between electrically-conductive parts. The coupling surface includes a pattern of grooves and the electrically-insulating encapsulation includes anchoring protrusions extending into the grooves of the pattern of grooves in the coupling surface.

Abstract: A semiconductor die is mounted at a die area of a ball grid array package that includes an array of electrically-conductive ball. A power channel conveys a power supply current to the semiconductor die. The power channel is formed by an electrically-conductive connection plane layers extending in a longitudinal direction between a distal end at a periphery of the package and a proximal end at the die area. A distribution of said electrically-conductive balls is made along the longitudinal direction. The electrically-conductive connection plane layer includes subsequent portions in the longitudinal direction between adjacent electrically-conductive balls of the distribution. Respective electrical resistance values of the subsequent portions monotonously decrease from the distal end to the proximal end. A uniform distribution of power supply current over the length of the power channel is thus facilitated.

Abstract: A sensor circuit for a power FET monitors current flowing through the FET and includes a regulator circuit regulating a first current flowing through a sense resistance, so voltage drop at the sense resistance corresponds to voltage drop between terminals of the FET. A measurement circuit provides a second current corresponding (or being proportional) to the first current. A first switch selectively applies the second current to a resistor based on a first control signal, and a low pass filter generates a low-pass filtered signal by filtering voltage at the resistor. A voltage follower generates a replica of the low-pass filtered signal, and a second switch selectively applies the replica to the resistor. When the FET is closed, a control circuit closes the first switch and opens the second electronic switch. When the FET is opened, the control circuit opens the first electronic switch and closes the second electronic switch.

Abstract: A semiconductor device includes: a substrate; a transduction microstructure integrated in the substrate; a cap joined to the substrate and having a first face adjacent to the substrate and a second, outer, face; and a channel extending through the cap from the second face to the first face and communicating with the transduction microstructure. A protective membrane made of porous polycrystalline silicon permeable to aeriform substances is set across the channel.

Abstract: An integrated circuit includes a non-volatile memory, a charge pump that generates high voltages for programming operations of the non-volatile memory array, and a charge pump regulator that controls a slew rate of the charge pump. The charge pump regulator generates a sense current indicative of the slew rate and adjusts a frequency of a clock signal provided to the charge pump based on the sense current.

Abstract: A production process of a SiC wafer carried out in a same reaction chamber includes forming, on a support, a first SiC layer. The support is separated from the first SiC layer. A second SiC layer is grown on the first SiC layer, which includes introducing into the reaction chamber a precursor in the gaseous phase of a first dopant having a first electrical conductivity to generate a first stress in the second SiC layer, and introducing into the reaction chamber a precursor in the gaseous phase of a second dopant having a second electrical conductivity opposite to the first electrical conductivity, to generate a second stress in the second SiC layer that is opposite to, and balances, the first stress. The SiC wafer is thus without effects of warpage.

Abstract: A multiplexer includes an input, an output, and a main switch configured to pass a signal from the input to the output. The multiplexer includes two bootstrap circuits that collectively maintain a constant voltage between terminals of the main switch during alternating phases.

Abstract: Disclosed herein is a control system for a projection system, including a first subtractor receiving an input drive signal and a feedback signal and generating a first difference signal therefrom, the feedback signal being indicative of position of a quasi static micromirror of the projection system. A type-2 compensator receives the first difference signal and generates therefrom a first output signal. A derivative based controller receives the feedback signal and generates therefrom a second output signal. A second subtractor receives the first and second output signals and generates a second difference signal therefrom. The second difference signal serves to control a mirror driver of the projection system. A higher order resonance equalization circuit receives a pre-output signal from an analog front end of the projection system that is indicative of position of the quasi static micromirror, and generates the feedback signal therefrom.

Abstract: A piezoelectric microelectromechanical acoustic transducer, having a semiconductor substrate with a frame portion and a through cavity defined internally by the frame portion; an active membrane, suspended above the through cavity and anchored, at a peripheral portion thereof, to the frame portion of the substrate by an anchorage structure, a plurality of piezoelectric sensing elements carried by a front surface of the active membrane so as to detect mechanical stresses of the active membrane; a passive membrane, suspended above the through cavity, underneath the active membrane, interposed between the through cavity and a rear surface of the active membrane; and a pillar element, which fixedly couples, and is centrally interposed between, the active membrane and the passive membrane. A ventilation hole passes through the entire active membrane, the passive membrane and the pillar element to set the through cavity in fluidic communication with the front surface of the active membrane.

Abstract: A circuit includes at least one bipolar transistor and at least one variable capacitance diode. The circuit is fabricated using a method whereby the bipolar transistor and variable capacitance diode are jointly produced on a common substrate.

Abstract: A pixel includes a single photon avalanche diode (SPAD) having a cathode coupled to a high voltage supply through a quenching element, with the SPAD having a capacitance at its anode formed from a deep trench isolation, with the quenching element having a sufficiently high resistance such that the capacitance is not fully charged when the SPAD is struck by an incoming photon. The pixel includes a clamp transistor configured to be controlled by a voltage clamp control signal to clamp voltage at an anode of the SPAD when the SPAD is struck by an incoming photon to be no more than a threshold clamped anode voltage, and readout circuitry coupled to receive the clamped anode voltage from the clamp transistor and to generate a pixel output therefrom. The threshold clamped anode voltage is below a maximum operating voltage rating of transistors forming the readout circuitry.

Abstract: In various embodiments, the present disclosure provides semiconductor packages, devices, and methods. In one embodiment, a device includes a die pad, leads that are spaced apart from the die pad, and a semiconductor die on the die pad. The semiconductor die has a first surface and a second surface opposite the first surface. The second surface faces the die pad. An encapsulant is provided on the semiconductor die, the die pad and the leads, and the encapsulant has a first surface opposite the die pad and the leads, and a second surface opposite the first surface. The second surface of the encapsulant extends between the die pad and an adjacent lead. The second surface of the encapsulant is spaced apart from the first surface of the encapsulant by a first distance, and an exposed surface of the die pad is spaced apart from the first surface of the encapsulant by a second distance that is greater than the first distance.

Abstract: Series of first ramps and second ramps are generated. A circuit delivers a first signal representative of the comparison of each first ramp with a set point and delivers a second signal representative of the comparison of each second ramp with the set point. Based on the first and second signals: a first ramp is stopped and a second ramp is started when the first ramp reaches the set point, and a second ramp is stopped and a first ramp is started when the second ramp reaches the set point. The value of the set point is modulated in response a maximum value of the first/second last ramp compared with the set point.

Abstract: Charge pump stages are coupled between flying capacitor pairs and arranged in a cascaded between a bottom voltage line and an output voltage line. Gain stages apply pump phase signals having a certain amplitude to the charge pump stages via the flying capacitors. A feedback signal path from the output voltage line to the bottom voltage line applies a feedback control signal to the bottom voltage line. Power supply for the gain stages is provided by a voltage of the feedback control signal in order to control the amplitude of the pump phase signals. An asynchronous logic circuit generates the switching drive signals for the gain stages with a certain switching frequency which is a function of a logic supply voltage derived from the voltage of the feedback control signal.

Abstract: An X-ray detector includes a first circuit with an NPN-type bipolar transistor and a second circuit configured to compare a voltage at a terminal of the NPN-type bipolar transistor with a reference value substantially equal to a value of the terminal voltage which would occur when the first circuit has been exposed to a threshold quantity of X-rays.

Abstract: A light-emitting diode has an anode terminal coupled to a node of application of a power supply voltage by a first transistor and a cathode terminal coupled to a node of application of a reference voltage by a second transistor. A microcontroller includes a digital-to-analog converter and a comparator, with the comparator having a first input coupled to one of the anode and cathode terminals of the diode and a second input configured to receive an output voltage of the converter. An output signal of the comparator controls one of the first and second transistors to turn off when the comparator detects an operating condition where current flow in the light-emitting diode exceeds maximum current limit (such as with the light-emitting diode operating in an exponential operating area.