Abstract: A decoder decodes a memory address and selectively drives a select line (such as a word line or mux line) of a memory. An encoding circuit encodes the data on select lines to generate an encoded address. The encoded address and the memory address are compared by a comparison circuit to generate a test result signal which is indicative of whether the decoder is operating properly. To test the comparison circuit for proper operation, a subset of an MBIST scan routine causes the encoded address to be blocked from the comparison circuit and a force signal to be applied in its place. A test signal from the scan routine and the force signal are then compared by the comparison circuit, with the test result signal generated from the comparison being indicative of whether the comparison circuit itself is operating properly.

Abstract: A strip made of a semiconductor material is formed over a substrate. Longitudinal portions of the strip having a same length are covered with sacrificial gates made of an insulating material and spaced apart from each other. Non-covered portions of the strip are doped to form source/drain regions. An insulating layer followed by a layer of a temporary material is then deposited. Certain ones of the sacrificial gates are left in place. Certain other ones of the sacrificial gates are replaced by a metal gate structure. The temporary material is then replaced with a conductive material to form contacts to the source/drain regions.

Abstract: A bipolar transistor is supported by a single-crystal silicon substrate including a collector connection region. A first epitaxial region forms a collector region doped with a first conductivity type on the collector connection region. The collector region includes a counter-doped region of a second conductivity type. A second epitaxial region forms a base region of a second conductivity type on the first epitaxial region. Deposited semiconductor material forms an emitter region of the first conductivity type on the second epitaxial region. The collector region, base region and emitter region are located within an opening formed in a stack of insulating layers that includes a sacrificial layer. The sacrificial layer is selectively removed to expose a side wall of the base region. Epitaxial growth from the exposed sidewall forms a base contact region.

Abstract: Electrostatic discharge (ESD) protection is provided in circuits which use of a tunneling field effect transistor (TFET) or an impact ionization MOSFET (IMOS). These circuits are supported in silicon on insulator (SOI) and bulk substrate configurations to function as protection diodes, supply clamps, failsafe circuits and cutter cells. Implementations with parasitic bipolar devices provide additional parallel discharge paths.

Abstract: A low drop-out (LDO) voltage regulator circuit includes a power transistor having a control terminal configured to receive a control signal and an output terminal coupled to an output node. A current regulation loop senses current flowing through the power transistor and modulates the control signal to cause the power transistor to output a constant current to the output node. A voltage regulation loop senses voltage at the output node and modulates the control signal to cause the power transistor to deliver current to the output node so that an output voltage at the output node is regulated. The current regulation loop includes a bipolar transistor connected to the control terminal of the power transistor, where a base terminal of the bipolar transistor is driven by a signal dependent on a difference between the sensed current flowing through the power transistor and a reference.

Abstract: A circuit for protecting an integrated circuit against fault injection attacks includes an element including a dielectric which is destroyed, resulting in the occurrence of a short-circuit. The element is connected between two terminals that receive a power supply voltage of the integrated circuit.

Abstract: Disclosed herein is a method of operating a touch screen controller in a device with a touch screen having force lines and sense lines. The method includes receiving touch data from the touch screen, and operating the touch screen in a self capacitance sensing mode. In the self capacitance sensing mode, which force lines have strength values indicating a potential touch to the touch screen are determined. The method also includes operating the touch screen in a mutual capacitance sensing mode, and in the mutual capacitance sensing mode, performing mutual capacitance sensing on only a subset of the force lines, with the subset of the force lines including at least those force lines indicating the potential touch to the touch screen.

Abstract: A device includes a current source, a first transistor connected between a first supply rail and an output terminal, and a second transistor connected between the output terminal and a first terminal of the current source, wherein a second terminal of the current source is connected to a second supply rail. A variable-gain amplifier circuit responds to a potential at the first terminal of the current source by applying a potential to the control terminal of the first transistor. A gain of the amplifier circuit is determined by a potential at the output terminal.

Abstract: A time-of-flight ranging system disclosed herein includes a receiver asserting a photon received signal in response to detection of light that has reflected off a target and returned to the time-of-flight ranging system. A first latch circuit has first and second data inputs receiving a first pair of differential timing references, the first latch circuit latching data values at its first and second data inputs to first and second data outputs based upon assertion of the photon received signal. A first counter counts latching events of the first latch circuit during which the first data output is asserted, and a second counter counts latching events of the first latch circuit during which the second data output is asserted. Processing circuitry determines distance to the target based upon counted latching events output from the first and second counters.

Abstract: An integrated circuit includes a memory cell incorporating an antifuse device. The antifuse device includes a state transistor having a control gate and a second gate that is configured to be floating. A dielectric layer between the control gate and the second gate is selectively blown in order to confer a broken-down state on the antifuse device where the second gate is electrically coupled to the control gate for storing a first logic state. Otherwise, the antifuse device is in a non-broken-down state for storing a second logic state.

Abstract: A device includes a first transistor connected between a first node and an output terminal and a first current source connected between the first node and a supply rail. A circuit includes a second current source connected between the supply rail and a second node, an operational amplifier having a non-inverting input configured to receive a potential set point, and a second transistor connected between the second node and an inverting input of the operational amplifier. An output of the operational amplifier is connected to a control terminal of the second transistor and further connected to a control terminal of the first transistor.

Abstract: A method for managing a dynamic range of an optical detection device illuminated by a modulated optical radiation, the method including: generating a detection signal from the modulated optical radiation; generating, based on the detection signal, a histogram including a plurality of histogram classes; comparing a chosen maximum value and a value of each histogram class of the plurality of histogram classes; and stopping a generation of the histogram in response to a determination that the value of any one of the plurality of histogram classes is equal to the maximum value.

Abstract: A method of processing electrophysiological signals includes: receiving, over a limited time duration, sample electrocardiography (ECG) signals indicative of heart pulsatile activity occurring with a variable heart rate, wherein receiving the sample ECG signals is discontinued at an expiry of the limited time duration; receiving photoplethysmography (PPG) signals indicative of the heart pulsatile activity; determining a correlation between the sample ECG signals and the PPG signals; determining reconstructed ECG signals from the PPG signals as a function of the correlation between the sample ECG signals and the PPG signals; and estimating a heart rate variability of the variable heart rate as a function of the reconstructed ECG signals.

Abstract: A method includes switching a switching circuit of the switched-mode power supply in a synchronous mode by turning on and off switches of the switching circuit in synchrony with a clock signal, wherein the switching circuit is coupled to an inductive element, and wherein the synchronous mode comprises a charging phase and a discharging phase; switching the switching circuit in an asynchronous mode by turning on and off switches of the switching circuit without being synchronized with the clock signal, wherein the asynchronous mode comprises a charging phase and a discharging phase; charging the inductive element during the charging phase of the synchronous mode; discharging the inductive element during the discharging phase of the synchronous mode; charging the inductive element during the charging phase of the asynchronous mode; and discharging the inductive element during the discharging phase of the asynchronous mode.

Abstract: A semiconductor wafer includes first zones containing integrated circuits, each first zone including a substrate and a sealing ring at a periphery of the substrate. The first zones are separated from each other by second zones defining cutting lines or paths. The integrated circuit includes an electrically conductive fuse that extends between a first location inside the integrated circuit and a second location situated outside the integrated circuit beyond one of the cutting lines. This electrically conductive fuse includes a portion that passes through the sealing ring and another portion that straddles the adjacent cutting line. The portion of the fuse that passes through is electrically isolated from the sealing ring and from the substrate. The straddling portion is configured to be sliced, when cutting the wafer along the cutting line, so as to cause the fuse to change from an electrical on state to an electrical off state.

Abstract: A pad forms a connection terminal suitable for coupling circuit elements integrated in a chip to circuits outside the chip itself. At least one inductor is provided for use in the reception/transmission of electromagnetic waves or for supplying the chip with power or both. The connection pad and inductor are combined in a structure which reduces overall occupied area. A magnetic containment structure surrounds the structure to contain a magnetic field of the inductor.

Abstract: Trenches of different depths in an integrated circuit are formed by a process utilizes a dry etch. A first stop layer is formed over first and second zones of the substrate. A second stop layer is formed over the first stop layer in only the second zone. A patterned mask defines the locations where the trenches are to be formed. The dry etch uses the mask to etch in the first zone, in a given time, through the first stop layer and then into the substrate down to a first depth to form a first trench. This etch also, at the same time, etch in the second zone through the second stop layer, and further through the first stop layer, and then into the substrate down to a second depth to form a second trench. The second depth is shallower than the first depth.

Abstract: In an embodiment, a method for protecting an electronic circuit includes: detecting a malfunction of the electronic circuit; executing a plurality of waves of countermeasures without interrupting an operation of the electronic circuit; and triggering a reset of the electronic circuit after executing the plurality of waves of countermeasures. An interval between two waves of countermeasures of the plurality of waves of countermeasures is variable.

Abstract: An embodiment device comprises a processing circuit and IP circuitry coupled to a power supply line, wherein the IP circuitry has an IP circuitry supply threshold for IP circuitry operation. A supply monitor circuit is coupled to the power supply line to sense the voltage on the power supply line and to switch the processing circuit to a low-power mode as a result of a drop in the voltage on the power supply line. The supply monitor circuit comprises a threshold setting node and is configured to be deactivated as a result of the voltage on the power supply line dropping below a deactivation threshold level set at the threshold setting node. A threshold setting circuit is configured to apply to the threshold setting node of the supply monitor circuit the IP circuitry supply threshold as a result of the processing circuit being in the low-power mode.

Abstract: A circuit for controlling current in an inductive load is provided. The circuit includes a driver circuit for driving a load current in the inductive load. The driver circuit includes a switch, which is switched on to increase the load current and a recirculation diode, which re-circulates the load current when the switch is off. The circuit includes a control module that generates a control signal to switch on and off the switch. The control module includes a PWM current controller comprising a negative feedback closed loop implementing at least a proportional control and an integral control. The PWM current controller receives a target current value and an estimated current flowing in the load during a measurement PWM cycle. The PWM current controller generates the control signal for a control input of the switch based on an error between the target current and the estimated current.