Abstract: An electronic envelope detection circuit includes an input signal detecting circuit having at least one MOS transistor configured to receive a radiofrequency input signal and to deliver an internal signal on the basis of the input signal. The biasing point of the at least one transistor is controlled by the input signal and a control signal. A processing circuit that is coupled to the input signal detecting circuit is configured to deliver a low-frequency output signal on the basis of the internal signal and further deliver the control signal on the basis of the output signal. In operation, the value of the control signal decreases when the average power of the input signal increases, and vice versa.

Abstract: A first circuit structure of an electronic IC device includes comprises light-sensitive optical circuit components. A second circuit structure of the electronic IC device includes an electronic circuit component and an electrically-conductive layer extending between and at a distance from the optical circuit components and the electronic circuit component. Electrical connections link the optical circuit components and the electronic circuit component. These electrical connections are formed in holes which pass through dielectric layers and the intermediate conductive layer. Electrical insulation rings between the electrical connections and the conductive layer are provided which surround the electrical connections and have a thickness equal to a thickness of the conductive layer.

Abstract: A pixel includes a photodiode and first and second transistors, the first and second transistors being coupled in series. One of the first and second transistors is a P channel transistor and the other is an N channel transistor. An electronic device may include one or more of the pixels.

Abstract: A power MOS stage includes a first power MOS device and a second power MOS devices connected in parallel between a first node and a second node, the first power MOS device having a first voltage rating and the second power MOS device having a second voltage rating that is lower than the first voltage rating. A driver circuit is configured to drive control nodes of the first and second power MOS devices in a sequential manner when actuating the power MOS stage by actuating the first power MOS device before actuating the second power MOS device. The control nodes of the first and second power MOS devices are further driven in a sequential manner when deactuating the power MOS stage by deactuating the second power MOS device before deactuating the first power MOS device.

Abstract: A quartz crystal resonator is connected to an array of switchable capacitors or resistors. The switched actuation of elements of the array is controlled by bits of a control word. At least one of the bits of the control word is controlled by pulse width modulation to effectuate a tuning of the oscillation frequency of the quartz crystal resonator.

Abstract: A quartz crystal resonator is coupled to an electronic circuit. A capacitive or resistive element is provided for adjusting a frequency of the quartz crystal resonator on activation or deactivation of a function of a circuit. Control is made according to a model of an expected variation of a temperature of the quartz crystal resonator.

Abstract: A delay line includes a delay chain, a pulse generator generating a pulse based on a received input signal, and a delay chain control circuit. The delay chain control circuit has a first input receiving the pulse, a second input receiving output from a last element of the delay chain, and a selection input receiving a delayed version of the received input signal. The delay chain control circuit has an output coupled to provide input to a first element of the delay chain in response to the delayed version of the received input signal. An output selection circuit receives outputs from each element of the delay chain, counts assertions of the output of the last element of the delay chain and, in response to the count being equal to a desired count, passes a desired one of the outputs of the elements of the delay chain as output.

Abstract: A capacitive element of an integrated circuit includes first and second electrodes. The first electrode is formed by a first electrically conductive layer located above a semiconductor well doped with a first conductivity type. The second electrode is formed by a second electrically conductive layer located above the first electrically conductive layer of the semiconductor well. The second electrode is further formed by a doped surface region within the semiconductor well that is heavily doped with a second conductivity type opposite the first conductivity type, wherein the doped surface region is located under the first electrically conductive layer. An inter-electrode dielectric area electrically separates the first electrode and the second electrode.

Abstract: A capacitive sensing structure includes a first sensing electrode located in a first layer for sensing a first capacitance and producing a first sense signal indicative of the sensed first capacitance. A transmit electrode is located in the first layer and positioned surrounding 90%+ of a perimeter of the first sensing electrode. A second sensing electrode is located in the first layer and positioned surrounding 90%+ of a perimeter of the transmit electrode, the second sensing electrode to sense a second capacitance and produce a second sense signal indicative of the sensed second capacitance. Controller circuitry receives the first and second sense signals, compares a change in the sensed first capacitance to a change in the sensed second capacitance, and produces an output signal indicative of a user touch based upon the comparison between the change in the sensed first capacitance and the change in the sensed second capacitance.

Abstract: The half-bridges driving a multiphase motor are controlled to perform a sequence of operations to support charging a hold capacitor. First, in a brake configuration, the half-bridge transistors are controlled such that either high-side transistors or low-side transistors of the half-bridges are turned on. Second, in an active step-up configuration, the half-bridge transistors are controlled such that the high-side transistor of a first half-bridge and the low-side transistor of a second half-bridge are both turned on and the low-side transistor of the first half-bridge and the high-side transistor of the second half-bridge are both turned off. Third, in an active brake configuration, the half-bridge transistors are controlled such that the low-side transistor of the first half-bridge and the high-side transistor of the second half-bridge are both turned on and the high-side transistor of the first half-bridge and the low-side transistor of the second half-bridge stage are both turned off.

Abstract: Electrostatic discharge (ESD) protection is provided in using a supply clamp circuit using an ESD event actuated SCR device. The SCR device may include an embedded field effect transistor (FET) having an insulated gate that receives a trigger signal from an ESD detection circuit. The SCR device may alternatively include a variable substrate resistor having an insulated gate that receives a trigger signal from an ESD detection circuit.

Abstract: A compensation circuit receives a sensing signal from a Hall sensor and outputs a compensated Hall sensing signal. The compensation circuit has a gain that is inversely proportional to Hall sensor drift mobility. The compensated Hall sensing signal is temperature-compensated.

Abstract: A valve module includes a semiconductor body, cavities in the semiconductor body separated from each other by a distance, a cantilever structure suspended over each cavity to enable at least partial closing of the cavity, and a piezoelectric actuator for each cantilever structure. The piezoelectric actuator is configured for use to cause a positive bending of the respective cantilever structure and so modulate a rate of air flow through the valve module.

Abstract: A semiconductor region includes an isolating region which delimits a working area of the semiconductor region. A trench is located in the working area and further extends into the isolating region. The trench is filled by an electrically conductive central portion that is insulated from the working area by an isolating enclosure. A cover region is positioned to cover at least a first part of the filled trench, wherein the first part is located in the working area. A dielectric layer is in contact with the filled trench. A metal silicide layer is located at least on the electrically conductive central portion of a second part of the filled trench, wherein the second part is not covered by the cover region.

Abstract: An attack on an integrated circuit using a beam of electrically charged particles is detected by collecting charges due to the attack using at least one electrically conductive body that is electrically coupled to the floating gate of a state transistor. Prior to the attack, the state transistor is configured to confer an initial threshold voltage. The collected charges passed to the floating gate cause a modification of the threshold voltage of the state transistor. Detection of the attack is made by determining that the threshold voltage of the state transistor is different from the initial threshold voltage.

Abstract: A transmitter circuit for use in a source synchronous type interface includes a flip-flop having a data input configured to receive serial data, a clock input configured to receive a source clock and a data output coupled to a data line. A first multiplexer has a first input configured to receive the source clock, a second input configured to receive a phase shifted clock (shifted by ninety degrees from the source clock), and a clock output coupled to a clock line. A control circuit operates to control selection by the first multiplexer of the source clock as a transmit clock sent over the clock line for a delay on clock at destination implementation. Alternatively, the control circuit causes selection by the first multiplexer of the phase shifted clock as the transmit clock sent over the clock line if the system is configured for a delay on clock at source implementation.

Abstract: Power MOS device, in which a power MOS transistor has a drain terminal that is coupled to a power supply node, a gate terminal that is coupled to a drive node and a source terminal that is coupled to a load node. A detection MOS transistor has a drain terminal that is coupled to a detection node, a gate terminal that is coupled to the drive node and a source terminal that is coupled to the load node. A detection resistor has a first terminal coupled to the power supply node and a second terminal coupled to the detection node.

Abstract: A method and apparatus for classifying a spatial environment as open or enclosed are provided. In the method and apparatus, one or more microphones detect ambient sound in a spatial environment and output an audio signal representative of the ambient sound. A processor determines a spatial environment impulse response (SEIR) for the audio signal and extracts one or more features of the SEIR. The processor classifies the spatial environment as open or enclosed based on the one or more features of the SEIR.

Abstract: An electronic device includes a first electronic component and a second electronic. Each electronic component includes a carrier substrate having a back side and a front side, an electronic chip including an integrated optical element, an overmolded transparent block encapsulating the electronic chip above the carrier substrate, and electrical connections between the electronic chip and electrical contacts of the carrier substrate. An overmolded grid encapsulates and holds the first and second electronic components. The grid is configured so that sides of the first and second electronic components are at least partially exposed.

Abstract: A method for detecting a writing error of a datum in memory includes: storing at least two parts of equal size of a binary word representative of said datum at the same address in at least two identical memory circuits, and comparing internal control signals of the two memory circuits to determine existence of the writing error.