Abstract: A delay independent differential hysteresis receiver. The differential hysteresis receiver uses two parallel paths in a first receiver stage, each path having a comparator with a dedicated offset on the complimentary inputs. A second receiver stage includes a hold circuit that brings the two parallel paths of the first receiver stage together to form a receiver hysteresis output.

Abstract: A datum is written to a memory, by splitting a binary word, representative of the datum and an error correcting or detecting code, into a first part and a second part. The first part is written at a logical address in a first memory circuit. The second part is written at the logical address in a second memory circuit. The error correcting or detecting code is dependent on both the datum and the logical address.

Abstract: An opaque dielectric carrier and confinement substrate is formed by a stack of layers laminated on each other. The stack includes a solid back layer and a front frame having a peripheral wall and an intermediate partition which delimits two cavities located on top of the solid back layer and on either side of the intermediate partition. Electronic integrated circuit (IC) chips are located inside the cavities and mounted on top of the solid back layer. Each IC chip includes an integrated optical element. Electrical connections are provided between the IC chips and back electrical contacts of the solid back layer. Transparent encapsulation blocks are molded in the cavities to embed the IC chips.

Abstract: A DC-DC converter includes clock generation circuitry generating first and second clock signals that are out of phase, and a control signal generator generating a switching control signal at an edge of the second clock signal based upon a comparison of an error voltage to a summed voltage. Boost circuitry charges an energy storage component during an on-phase and discharges the energy storage component during an off-phase to thereby generate an output voltage. The on-phase and off-phase are set as a function of the switching control signal. Sum voltage generation circuitry generates a ramp voltage in response to an edge of the first clock signal and generates the summed voltage at an edge of the second clock signal. The sum voltage represents a sum of the ramp voltage and a voltage representative of the current flowing in the energy storage component during the on-phase.

Abstract: A touch screen controller includes driving circuitry coupled to a conductive line through a resistance and drives that conductive line with a driving signal passed through the resistance at a drive frequency. Sensing circuitry is coupled to that conductive line and senses a voltage at that conductive line, the voltage being a function of a capacitance seen by that conductive line. Analog to digital conversion circuitry is coupled to the sensing circuitry and samples the sensed voltage at a sampling frequency to produce samples. Processing circuitry is coupled to the analog to digital conversion circuitry and directly calculates a tangent of a phase shift of the voltage due to the resistance and the capacitance from the samples, and determines a self touch value for that conductive line as a function of the tangent of the phase shift of the voltage.

Abstract: An ultralong time constant time measurement device includes elementary capacitive elements that are connected in series. Each elementary capacitive element is formed by a stack of a first conductive region, a dielectric layer having a thickness suited for allowing charge to flow by direct tunneling effect, and a second conductive region. The first conductive region is housed in a trench extending from a front face of a semiconductor substrate down into the semiconductor substrate. The dielectric layer rests on the first face of the semiconductor substrate and in particular on a portion of the first conductive region in the trench. The second conductive region rests on the dielectric layer.

Abstract: An electronic device includes a voltage divider producing different reference voltages. Dummy pixels each are formed by a transfer gate transistor having a first conduction terminal coupled to a floating diffusion node, a second conduction terminal, and a control node coupled to a first gate signal line, a transmission gate coupled between one of the plurality of taps and the second conduction terminal of the transfer gate transistor, a floating diffusion capacitor coupled between the floating diffusion node and ground, a transistor having a first conduction terminal coupled to the floating diffusion node, a second conduction terminal, and a control terminal coupled to a second gate signal line, and a reset transistor having a first conduction terminal coupled to the upper reference voltage, a second conduction terminal coupled to the second conduction terminal of the transistor, and a control terminal coupled to a reset signal line.

Abstract: A device including a transistor is fabricated by forming a first part of a first region of the transistor through the implantation of dopants through a first opening. The second region of the transistor is then formed in the first opening by epitaxy.

Abstract: An integrated circuit includes a high-voltage MOS (HV) transistor and a capacitor supported by a semiconductor substrate. A gate stack of the HV transistor includes a first insulating layer over the semiconductor layer and a gate electrode formed from a first polysilicon. The capacitor includes a first electrode made of the first polysilicon and a second electrode made of a second polysilicon and at least partly resting over the first electrode. A first polysilicon layer deposited over the semiconductor substrate is patterned to form the first polysilicon of the gate electrode and first electrode, respectively. A second polysilicon layer deposited over the semiconductor substrate is patterned to form the second polysilicon of the second electrode. Silicon oxide spacers laterally border the second electrode and the gate stack of the HV transistor. Silicon nitride spacers border the silicon oxide spacers.

Abstract: A transistor is produced by forming a first part of a first region of the transistor in a semiconductor substrate by implanting dopants through an opening in an isolating trench formed at an upper surface of the semiconductor substrate. A second region of the transistor in the opening by epitaxy.

Abstract: First and second wells are formed in a semiconductor substrate. First and second trenches in the first second wells, respectively, each extend vertically and include a central conductor insulated by a first insulating layer. A second insulating layer is formed on a top surface of the semiconductor substrate. The second insulating layer is selectively thinned over the second trench. A polysilicon layer is deposited on the second insulating layer and then lithographically patterned to form: a first polysilicon portion over the first well that is electrically connected to the central conductor of the first trench to form a first capacitor plate, a second capacitor plate formed by the first well; and a second polysilicon portion over the second well forming a floating gate electrode of a floating gate transistor of a memory cell having an access transistor whose control gate is formed by the central conductor of the second trench.

Abstract: An integrated circuit includes a semiconductor substrate having a rear face. A first semiconductor well within the substrate includes circuit components. A second semiconductor well within the substrate is insulated from the first semiconductor well and the rest of the substrate. The second semiconductor well provides a detection device that is configurable and designed to detect a DFA attack by fault injection into the integrated circuit.

Abstract: In an integrated circuit supporting complementary metal oxide semiconductor (CMOS) integrated circuits, latch-up immunity is supported by surrounding a hot n-well with an n-well strap spaced from the hot n-well by a specified distance in accordance with design rules. The n-well strap is positioned between the hot n-well and other n-well or n-type diffusion structures.

Abstract: A semiconductor body includes a front side and a back side and is configured to support an electronic circuit. A buried region is provided in the semiconductor body at a location between the electronic circuit and the back side. The buried region includes a layer of conductive material and a dielectric layer, where the dielectric layer is arranged between the layer of conductive material and the semiconductor body. A conductive path extends between the buried region and the front side to form a path for electrical access to the layer of conductive material. A capacitor is thus formed with the layer of conductive material providing a capacitor plate and the dielectric layer providing the capacitor dielectric. A further capacitor plate is provided by the semiconductor body, or by a further layer of conductive material in the buried region.

Abstract: A Hall sensor compensation circuit includes an input node configured for receiving a bias signal for a Hall sensor. A bias node provides to the Hall sensor a compensated bias signal. A compensation network coupled between the input node and the bias node has a gain inversely proportional to Hall mobility, ?n?, wherein the Hall sensing signal is temperature-compensated.

Abstract: An electrode is included in a base substrate. A trench is produced in the base substrate. The trench is filled with an annealed amorphous material to form the electrode. The electrode is made of a crystallized material which includes particles that are implanted into a portion of the electrode that is located adjacent the front-face side of the base substrate.

Abstract: An electronic device includes a switched-mode power supply having a first operating phase during which the output node of the switched-mode power supply is coupled by an on switch to a source of a first reference voltage. The first operating phase is followed by a second operation phase during which the output node of the switched-mode power supply is in a high impedance state. While in the second operating phase, a capacitor connected to the output node of the switched-mode power supply at least partially discharges into a load.

Abstract: Semiconductor dice are arranged on a substrate such as a leadframe. Each semiconductor die is provided with electrically-conductive protrusions (such as electroplated pillars or bumps) protruding from the semiconductor die opposite the substrate. Laser direct structuring material is molded onto the substrate to cover the semiconductor dice arranged thereon, with the molding operation leaving a distal end of the electrically-conductive protrusion to be optically detectable at the surface of the laser direct structuring material. Laser beam processing the laser direct structuring material is then performed with laser beam energy applied at positions of the surface of the laser direct structuring material which are located by using the electrically-conductive protrusions optically detectable at the surface of the laser direct structuring material as a spatial reference.

Abstract: A charge pump includes an intermediate node capacitively coupled to receive a first clock signal oscillating between a ground and positive supply voltage, the intermediate node generating a first signal oscillating between a first and second voltage. A level shifting circuit shifts the first signal in response to a second clock signal to generate a second signal oscillating between first and third voltages. A CMOS switching circuit includes a first transistor having a source coupled to an input, a second transistor having a source coupled to an output and a gate coupled to receive the second signal. A common drain of the CMOS switching circuit is capacitively coupled to receive the first clock signal. When positively pumping, the first voltage is twice the second voltage and the third voltage is ground. When negatively pumping, the first and third voltages are of opposite polarity and the second voltage is ground.

Abstract: A multiple-input analog-to-digital converter device includes analog-to-digital converter circuits arranged between input nodes and output nodes. The analog-to-digital converter circuits operate over respective conversion times to provide simultaneous conversion of the analog input signals into respective conversion time signals. A time-to-digital converter circuit includes timer circuitry common to the plurality of analog-to-digital converter circuits. The timer circuitry cooperates with the analog-to-digital converter circuits to convert the conversion time signals into digital output signals at the output nodes.