Abstract: The present description concerns a package for an electronic device. The package including a plate and a lateral wall, separated by a layer made of a bonding material and at least one region made of a material configured to form in the region an opening between the inside and the outside of the package when the package is heated.

Abstract: A multi-level pulser circuit comprises a set of first input pins for receiving respective positive voltage signals at different voltage levels, a set of second input pins for receiving respective negative voltage signals at different voltage levels, and a reference input pin configured to receive a reference voltage signal intermediate the positive voltage signals and the negative voltage signals. The circuit comprises an output pin configured to supply a pulsed output signal. The circuit further comprises control circuitry configured to selectively couple the output pin to one of the first input pins, the second input pins and the reference input pin to generate the pulsed output signal at the output pin.

Abstract: An electronic device includes a doped semiconductor substrate of a first conductivity type. First and second doped wells are provided, separated from each other by trench isolation, within the doped semiconductor substrate. At least one first region and at least one second region are respectively located in the first and second doped wells, with each first and second region having a doping level higher than a doping level of the first and second doped wells. The trench isolation penetrates into the first and second doped wells and extends laterally between the first region and second region. A third region laterally extends between the first and second doped wells at a location under the insulating trench. The third region has a doping level lower than the doping level of the first and second doped wells.

Abstract: The memory array of a circuit includes sub-arrays with memory cells arranged in a row-column matrix where each row includes a word line and each sub-array column includes a local bit line. A control circuit supports two modes of circuit operation: a first mode where only one word line in the memory array is actuated during a memory read and a second mode where one word line per sub-array are simultaneously actuated during the memory read. An input/output circuit for each column includes inputs to the local bit lines of the sub-arrays, a column data output coupled to the bit line inputs, and a sub-array data output coupled to each bit line input. In memory computation operations are performed in the second mode as a function of feature data and weight data stored in the memory.

Abstract: An array of a memory includes sub-arrays with memory cells arranged in a row-column matrix where each row includes a word line and each sub-array column includes a local bit line. A row decoder supports two modes of memory operation: a first mode where only one word line in the memory array is actuated during a read and a second mode where one word line per sub-array are simultaneously actuated during the read. An input/output circuit for each column includes inputs to the local bit lines of the sub-arrays, a column data output coupled to the bit line inputs, and a sub-array data output coupled to each bit line input. BIST testing of the input/output circuit is supported through data at both the column data output and the sub-array data outputs in order to confirm proper memory operation in support of both the first and second modes of operation.

Abstract: An electronic circuit includes a first electronic component formed above a buried insulating layer of a substrate and a second electronic component formed under the buried insulating layer. The insulating layer is thoroughly crossed by a semiconductor well. The semiconductor well electrically couples a terminal of the first electronic component to a terminal of the second electronic component.

Abstract: In an embodiment, an electronic device includes a first near field communication module, at least one second communication module, at least one portion of a volatile memory, at least one register, and at least one first circuit configured to activate the near field communication module, wherein the at least one second communication module is configured to power the at least one portion of the volatile memory, the at least one register and the at least one first circuit with a first supply voltage when the electronic device is in an on state and when the first near field communication module is in a standby mode.

Abstract: The method of determination of a depth map of a scene comprises generation of a distance map of the scene obtained by time of flight measurements, acquisition of two images of the scene from two different viewpoints, and stereoscopic processing of the two images taking into account the distance map. The generation of the distance map includes generation of distance histograms acquisition zone by acquisition zone of the scene, and the stereoscopic processing includes, for each region of the depth map corresponding to an acquisition zone, elementary processing taking into account the corresponding histogram.

Abstract: An antenna-in-package semiconductor device includes a semiconductor chip coupled to a planar substrate. An encapsulation body encapsulates the semiconductor chip. The encapsulation body includes a through cavity extending to the planar substrate. A rectilinear wire antenna is mounted within the through cavity and extends, for instance from the planar substrate, along an axis that is transverse to a surface of the planar substrate to which the semiconductor chip is coupled. The rectilinear wire antenna is electrically coupled to the semiconductor chip. An insulating material fills the cavity to encapsulated the rectilinear wire antenna.

Abstract: An integrated MOSFET device is formed in a body of silicon carbide and with a first type of conductivity. The body accommodates a first body region, with a second type of conductivity; a JFET region adjacent to the first body region; a first source region, with the first type of conductivity, extending into the interior of the first body region; an implanted structure, with the second type of conductivity, extending into the interior of the JFET region. An isolated gate structure lies partially over the first body region, the first source region and the JFET region. A first metallization layer extends over the first surface and forms, in direct contact with the implanted structure and with the JFET region, a JBS diode.

Abstract: A first side of a tapeless leadframe package is etched to form a ring shaped protrusion and a lead protrusion extending from a base layer. An integrated circuit die is mounted to tapeless leadframe package in flip chip orientation with a front side facing the first side. An electrical and mechanical attachment is made between a bonding pad of the integrated circuit die and the lead protrusion. A mechanical attachment is made between the front side of the integrated circuit die and the ring shaped protrusion. The integrated circuit die and the protrusions from the tapeless leadframe package are encapsulated within an encapsulating block. The second side of the tapeless leadframe package is then etched to remove portions of the base layer and define a lead for a leadframe from the lead protrusion and further define a die support for the leadframe from the ring shaped protrusion.

Abstract: A trace-data preparation circuit including a filtering circuit to receive traced memory-write data and a First In First Out buffer coupled with the filtering circuit to receive selected memory-write data filtered by the filtering circuit. The trace-data preparation circuit further including a data compression circuit to provide packaging data to a packaging circuit that groups the selected memory-write data.

Abstract: The present disclosure relates to a method for booting a processing device, the method including: generating, by a monotonic counter and during a first boot phase, a first count value; transmitting, by the monotonic counter, the first count value to an access control circuit of a memory; reading, on the basis of the first count value, first data stored in the memory; and generating, by the monotonic counter and during a second boot phase, a second count value greater than the first count value. The access control circuit of the memory is configured so that the reading of the first data is not authorized on the basis of the second count value.

Abstract: An optical sensor includes at least one photodetector configured to be reverse biased at a voltage exceeding a breakdown voltage by an excess bias voltage. At least one control unit is configured to adjust the reverse bias of the at least one photodetector. A method of operating an optical sensor is also disclosed.

Abstract: In an embodiment, A switched-mode power supply includes: a first node; a second node configured to receive a DC input voltage; a third node configured to receive a reference voltage; first and second switching transistors; a first circuit configured to control the first switching transistor; and a second circuit configured to control the second switching transistor, wherein the switched-mode power supply is configured to deliver a regulated output voltage at the first node from the DC input voltage, and wherein the first and second circuits are configured to be powered from the output voltage.

Abstract: Electronic device comprising a support substrate having a mounting face and an electronic chip having a rear face bonded on the mounting face by a volume of adhesive, wherein the support substrate comprises a plurality of wedging elements projecting from the mounting face so as to hold the chip bearing on contact areas of the wedging elements in a position substantially parallel to the mounting face of the support substrate.

Abstract: In an embodiment, a hardware configuration circuit reads and decodes an encoded life-cycle data and provides the decoded life-cycle data to a hardware circuit. A reset circuit monitors an external reset signal received via a reset terminal and, in response to determining that the external reset signal has a first logic level, executes a reset, a configuration, and a wait phase. The reset circuit waits until the external reset signal has a second logic level. A communication interface is activated during the wait phase and configured to receive a request. A hardware verification circuit generates a life-cycle advancement request signal when the request includes a given reference password and a reset circuit is in the wait phase. A write circuit writes a bit of the encoded life-cycle data stored in a non-volatile memory when the life-cycle advancement request signal is set, advancing the life-cycle to a given predetermined life-cycle stage.

Abstract: A MOSFET transistor includes, on a semiconductor layer, a stack of a gate insulator and of a gate region on the gate insulator. The gate region has a first gate portion and a second gate portion between the first gate portion and the gate insulator. The first gate portion has a first length in a first lateral direction of the transistor. The second gate portion has a second length in the first lateral direction that is shorter than the first length.

Abstract: A transducer includes a supporting body and a suspended structure mechanically coupled to the supporting body. The suspended structure has a first and a second surface opposite to one another along an axis, and is configured to oscillate in an oscillation direction having at least one component parallel to the axis. A first piezoelectric transducer is disposed on the first surface of the suspended structure, and a second piezoelectric transducer is disposed on the second surface of the suspended structure.

Abstract: An electronic device includes a stack of a first level having a SPAD, a second level having a quench circuit for said SPAD, and a third level having a circuit for processing data generated by said SPAD. A method for making the device includes: a) forming of the first level; b) bonding, on the first level, by molecular bonding, of a stack of layers including a semiconductor layer; and c) forming the quench circuit of the second level in the semiconductor layer.