Abstract: An image sensor is includes a plurality of pixels. Each of the pixels includes a silicon photoconversion region and a material that at least partially surrounds the photoconversion region. The material has a refraction index smaller than the refraction index of silicon, and the interface between the photoconversion region of the pixel and the material is configured so that at least one ray reaching the photoconversion region of the pixel undergoes a total reflection or a plurality of successive total reflections at the interface.

Abstract: A method can be used for generating personalized profile package data for integrated circuit cards. The method includes encrypting data records corresponding to profile data with a respective data protection key thereby obtaining encrypted data records. Each record includes a number of personalization fields to store different types of personalization values. The method also includes encrypting a file for a profile package with a master encryption key thereby obtaining an encrypted file for the profile package. The file includes fields to be personalized corresponding to one or more of the personalization fields to store different types of personalization values. The encrypted file for the profile package and encrypted data records are transmitted to a data preparation entity where the encrypted data records and the encrypted file can be decrypted and combined to obtain personalized profile packages.

Abstract: A system and method is provided for measuring a voltage drop at a node. In embodiments, a circuit includes an analog-to-digital converter, a current sink, and a controller. The input of the analog-to-digital converter and the input of the current sink is coupled to the node to be measured. A set point for the current sink is determined. The output of the analog-to-digital converter during the voltage drop is sampled. And a relative voltage drop value is computed by subtracting the sampled output of the analog-to-digital converter during the voltage drop from a sampled output of the analog-to-digital converter during a steady-state condition. The current sink operating at the set point during the steady-state condition and during the voltage drop.

Abstract: A sensor is driven at a first heating power value. The sensor generates a sensing signal that is indicative of a sensed entity. A possible onset of a sensor contamination condition is detected as a function of the sensing signal generated by the sensor. If such detecting fails to indicate onset of a sensor contamination condition, the sensor continues to be driven at the first heating power value. However, if such detecting indicates onset of a sensor contamination condition, a protection mode is activated. In the protection mode, the sensor is driven at a second heating power value for a protection interval, where the second heating power value is lower than the first heating power value. Furthermore, the operation may refrain from supplying power to the sensor for a further protection interval, wherein the further protection interval is longer than the protection interval.

Abstract: An electronic device includes a processing unit with a memory, a JTAG interface with test-data-input and test-mode-select lines coupled to the processing unit, a bridge circuit, and a multiplexer circuit. The bridge circuit includes a serial communication interface receiving a serial data input signal which conveys an input serial data frame. The bridge circuit includes a serial-to-parallel converter circuit block receiving the input serial data frame, processing the input serial data frame to read first and second subsets of input binary values therefrom, and transmitting the first subset via a first output signal and the second subset via a second output signal. The multiplexer circuit selectively propagates a received test-data-input signal or the first output signal to the test data input line, and selectively propagates a test-mode-select signal or the second output signal to the test mode select line of the JTAG interface.

Abstract: An embodiment circuit comprises high-side and low-side switches arranged between supply and reference nodes, and having an intermediate node. A switching control signal is applied with opposite polarities to the high-side and low-side switches. An inductive load is coupled between the intermediate node and one of the supply and reference nodes. Current sensing circuitry is configured to sample a first value of the load current flowing in one of the high-side and low-side switches before a commutation of the switching control signal, sample a second value of the load current flowing in the other of the high-side and low-side switches after the commutation of the switching control signal, sample a third value of the load current flowing in the other of the high-side and low-side switches after the second sampling, and generate a failure signal as a function of the first, second and third sampled values of the load current.

Abstract: A direct current (DC) to DC (DC-DC) converter includes a comparator setting a pulse width of a signal pulse, the pulse width corresponding to a voltage level of an output voltage of the DC-DC converter; a digital delay line (DDL) operatively coupled to the comparator, the DDL adjusting the pulse width of the signal pulse by linearly introducing delays to the signal pulse; a multiplexer operatively coupled to the DDL, the multiplexer selectively outputting a delayed version of the signal pulse; a phase detector operatively coupled to a system clock and the multiplexer, the phase detector generating a phase error between an output of the multiplexer and the system clock; and a logic control circuit operatively coupled to the multiplexer and the DDL, the logic control circuit adjusting the delay introduced to the signal pulse in accordance with the phase error.

Abstract: A circuit includes an electronic switch configured to be coupled intermediate a high-voltage node and low-voltage circuitry and configured to couple the low-voltage circuitry to the high-voltage node. A voltage-sensing node is configured to be coupled to the high-voltage node via a pull-up resistor. A further electronic switch can be switched to a conductive state to couple the voltage-sensing node and the control node of the electronic switch. A comparator compares a threshold with a voltage at the voltage-sensing node and causes the further electronic switch to switch on in response to the voltage at said voltage-sensing node reaching said threshold. A charge pump coupled to the current flow-path of the electronic switch is activated to the conductive state to pump electric charge from the current flow-path of the electronic switch to the control node of the electronic switch via the further electronic switch switched to the conductive state.

Abstract: For manufacturing an optical microelectromechanical device, a first wafer of semiconductor material having a first surface and a second surface is machined to form a suspended mirror structure, a fixed structure surrounding the suspended mirror structure, elastic supporting elements which extend between the fixed structure and the suspended mirror structure, and an actuation structure coupled to the suspended mirror structure. A second wafer is machined separately to form a chamber delimited by a bottom wall having a through opening. The second wafer is bonded to the first surface of the first wafer in such a way that the chamber overlies the actuation structure and the through opening is aligned to the suspended mirror structure. Furthermore, a third wafer is bonded to the second surface of the first wafer to form a composite wafer device. The composite wafer device is then diced to form an optical microelectromechanical device.

Abstract: An ultralong time constant time measurement device includes elementary capacitive elements that are connected in series. Each elementary capacitive element is formed by a stack of a first conductive region, a dielectric layer having a thickness suited for allowing charge to flow by direct tunnelling effect, and a second conductive region. The first conductive region is housed in a trench extending from a front face of a semiconductor substrate down into the semiconductor substrate. The dielectric layer rests on the first face of the semiconductor substrate and in particular on a portion of the first conductive region in the trench. The second conductive region rests on the dielectric layer.

Abstract: An in-memory computation (IMC) circuit includes a memory array formed by memory cells arranged in row-by-column matrix. Computational weights for an IMC operation are stored in the memory cells. Each column includes a bit line connected to the memory cells. A switching circuit is connected between each bit line and a corresponding column output. The switching circuit is controlled to turn on to generate the analog signal dependent on the computational weight and for a time duration controlled by the coefficient data signal. A column combining circuit combines (by addition and/or subtraction) and integrates analog signals at the column outputs of the biasing circuits. The addition/subtraction is dependent on one or more a sign of the coefficient data and a sign of the computational weight and may further implement a binary weighting function.

Abstract: An electronic device includes a solid body of SiC having a surface and having a first conductivity type. A first implanted region and a second implanted region have a second conductivity type and extend into the solid body in a direction starting from the surface and delimit between them a surface portion of the solid body. A Schottky contact is on the surface and in direct contact with the surface portion. Ohmic contacts are on the surface and in direct contact with the first and second implanted regions. The solid body includes an epitaxial layer including the surface portion and a bulk portion. The surface portion houses a plurality of doped sub-regions which extend in succession one after another in the direction, are of the first conductivity type, and have a respective conductivity level higher than that of the bulk portion.

Abstract: A method for manufacturing an electronic chip includes providing a semiconductor layer located on an insulator covering a semiconductor substrate. First and second portions of the semiconductor layer are oxidized up to the insulator. Stresses are generated in third portions of the semiconductor layer, and each of the third portions extend between two portions of the semiconductor layer that are oxidized. Cavities are formed which extend at least to the substrate through the second portions and the insulator. Bipolar transistors are formed in at least part of the cavities and first field effect transistors are formed in and on the third portions. Phase change memory points are coupled to the bipolar transistors.

Abstract: A microelectromechanical mirror device has, in a die of semiconductor material: a fixed structure defining a cavity; a tiltable structure carrying a reflecting region, elastically suspended above the cavity and having a main extension in a horizontal plane; at least one first pair of driving arms, carrying respective piezoelectric structures which can be biased to generate a driving force that causes rotation of the tiltable structure about a rotation axis parallel to a first horizontal axis of the horizontal plane; elastic suspension elements, which elastically couple the tiltable structure to the fixed structure at the rotation axis and are rigid to movements out of the horizontal plane and compliant to torsion about the rotation axis. In particular, the driving arms of the first pair are magnetically coupled to the tiltable structure to cause its rotation about the rotation axis by magnetic interaction, following biasing of the respective piezoelectric structures.

Abstract: A semiconductor wafer includes first zones containing integrated circuits, each first zone including a substrate and a sealing ring at a periphery of the substrate. The first zones are separated from each other by second zones defining cutting lines or paths. The integrated circuit includes an electrically conductive fuse that extends between a first location inside the integrated circuit and a second location situated outside the integrated circuit beyond one of the cutting lines. This electrically conductive fuse includes a portion that passes through the sealing ring and another portion that straddles the adjacent cutting line. The portion of the fuse that passes through is electrically isolated from the sealing ring and from the substrate. The straddling portion is configured to be sliced, when cutting the wafer along the cutting line, so as to cause the fuse to change from an electrical on state to an electrical off state.

Abstract: A semiconductor substrate includes excavations which form trenches sunk. A capacitive element includes: a first dielectric envelope conforming to sides and bottoms of the trenches; a first semiconductor layer conforming to a surface of the first dielectric envelope in the trenches; a second dielectric envelope conforming to a surface of the first semiconductor layer in the trenches; and a second semiconductor layer conforming to a surface of the second dielectric envelope in the trenches.

Abstract: A measurement of the rotation speed of an object is made using a time-of-flight sensor configured to detect a passing of one or more of elements of the object through a given position. The time-of-flight sensor is further mounted on a one-person vehicle configured to protect the one-person vehicle against collisions through the making a time-of-flight measurement of a relative speed between the one-person vehicle and an obstacle.

Abstract: An in-memory computation (IMC) circuit includes a memory array formed by memory cells arranged in row-by-column matrix. Computational weights for an IMC operation are stored in the memory cells. Each column includes a bit line connected to the memory cells. A biasing circuit is connected between each bit line and a corresponding column output. A column combining circuit combines and integrates analog signals at the column outputs of the biasing circuits. Each biasing circuit operates to apply a fixed reference voltage level to its bit line. Each biasing circuit further includes a switching circuit that is controlled to turn on for a time duration controlled by asps comparison of a coefficient data signal to a ramp signal to generate the analog signal dependent on the computational weight. The ramp signal is generated using a reference current derived from a reference memory cell.

Abstract: A multiplexer includes an input, an output, and a main switch configured to pass a signal from the input to the output. The multiplexer includes two bootstrap circuits that collectively maintain a constant voltage between terminals of the main switch during alternating phases.

Abstract: A method of making a MEMS device including forming a mirror stack on a handle layer, applying a first bonding layer to the mirror stack, and disposing a substrate on the first bonding layer. The handle layer is removed and a second bonding layer is applied. A cap layer is disposed on the second bonding layer. The mirror stack is formed by disposing a silicon layer on the handle layer, disposing a first insulating layer on the silicon layer, etching portions of the first insulating layer, and depositing a first conductive layer on the first insulating layer. The formation also includes depositing a second insulating layer on the first conductive layer, a portion of the second insulating layer to expose a portion of the first conductive layer exposed, and forming a conductive pad on the exposed portion of the first conductive layer.