Abstract: A device includes at least one capacitor. The capacitor includes an assembly of two metal pads and at least two metal plates, each plate extending at least from one pad to the other, a first insulating layer conformally covering said assembly, a second conductive layer conformally covering the first layer.

Abstract: A circuit monitors a first voltage delivered by a battery. The monitored first voltage is compared with a second voltage. When the comparator detects that the first voltage is smaller than the second voltage, a counter starts counting. If the value of the counter during said counting exceeds a limiting value, an interruption signal is generated to control an operating mode of an electronic device power by said battery.

Abstract: A device includes an active semiconductor layer on top of and in contact with an insulating layer which overlies a semiconductor substrate. A transistor for the device includes a source region, a drain region, and a body region arranged in the active semiconductor layer. The body region of the transistor is electrically coupled to the semiconductor substrate using a conductive via that crosses through the insulating layer.

Abstract: An ESD protection circuit includes a terminal connected to the cathode of a first diode and to the anode of a second diode, where the cathode of the second diode is not made of epitaxial silicon.

Abstract: A device includes a first layer, having a copper track located therein. The first layer is covered with a second layer including a cavity. The cavity exposes at least a portion of the track. The portion is covered with a third layer of titanium nitride doped with silicon.

Abstract: A device that provides high impedance contact pads for an electrostatic charge sensor. The contact pads are shared between the electrostatic charge sensor and drivers. The contact pads are set to a high impedance state by reducing current leakage through the drivers. Compared to electrostatic charge sensor with low impedance contact pads, the electrostatic charge sensor disclosed herein has high sensitivity, and is able to detect weak electrostatic fields.

Abstract: A back side illuminated image sensor includes a pixel formed by three doped photosensitive regions that are superposed vertically in a semiconductor substrate. Each photosensitive region is laterally framed by a respective vertical annular gate. The vertical annular gates are biased by a control circuit during an integration phase so as to generate an electrostatic potential comprising potential wells in the central portion of the volume of each doped photosensitive region and a potential barrier at each interface between two neighboring doped photosensitive regions.

Abstract: An interconnection substrate includes a thermomechanical support crossed by at least one electric interconnection hole. A first interconnection network is formed on a first surface of the thermomechanical support and a second interconnection network is formed on a second surface of the thermomechanical support. Each interconnection network includes and interconnection level formed by at least one metal track from which at least one metal via extends. The at least one metal track and the at least one metal via are embedded in an insulator layer so that the at least one metal via is flush with a surface of the insulator layer most distant from the thermomechanical support. At least one metal track protrudes from the insulator layer of the last interconnection level. The metal vias are configured to electrically couple together two adjacent levels and/or the last level with the at least one protruding metal track.

Abstract: Methods of manufacture of an optical diffuser. In one embodiment, an optical diffuser is formed by providing a wafer including a silicon slice of which an upper face is covered with a first layer made of a first material itself covered with a second layer made of a second selectively etchable material with respect to the first material. The method further includes forming openings in the second layer extending up to the first layer and filling the openings in the second layer with a third material. The method yet further includes bonding a glass substrate to the wafer on the side of its upper face and removing the silicon slice.

Abstract: An apparatus includes a first inverter configured to drive a first motor having a plurality of phases, the first inverter comprising a plurality of inverter legs, each of which is coupled to a corresponding phase of the first motor, a second inverter configured to drive a second motor having a plurality of phases, the second inverter comprising a plurality of inverter legs, each of which is coupled to a corresponding phase of the second motor, and a first current sensor configured to sense currents flowing in the first inverter and the second inverter, wherein the first current sensor is shared by at least by two inverter legs.

Abstract: A system for determining a fly height includes a first head of a disk drive, a second head of the disk drive, a capacitive sensor circuit coupled to the first head and the second head, and a logic device coupled to the capacitive sensor circuit. The capacitive sensor circuit is configured to measure a first capacitance between the first head and the first disk, remove noise from the first capacitance using a second capacitance between the second head and the second disk, and based thereon determine a corrected first capacitance. The logic device is configured to determine the fly height between the first head and the first disk using the corrected first capacitance.

Abstract: An integrated optical sensor is formed by a pinned photodiode. A semiconductor substrate includes a first semiconductor region having a first type of conductivity located between a second semiconductor region having a second type of conductivity opposite to the first type one and a third semiconductor region having the second type of conductivity. The third semiconductor region is thicker, less doped and located deeper in the substrate than the second semiconductor region. The third semiconductor region includes both silicon and germanium. In one implementation, the germanium within the third semiconductor region has at least one concentration gradient. In another implementation, the germanium concentration within the third semiconductor region is substantially constant.

Abstract: A photonic device includes a PCB having an integrated circuit mounted thereon, with a cap mounted to the PCB and carrying a lens positioned over the integrated circuit. The cap is formed by: an outer wall mounted to the PCB, extending upwardly from the PCB, and surrounding a portion of the integrated circuit; a first retention structure extending inwardly from the outer wall and across the integrated circuit, the first retention structure having a hole defined therein; and a second retention structure having a hole defined therein, the second retention structure being affixed within the first retention structure such that the hole in the second retention structure is axially aligned with the hole in the first retention structure. The lens is mechanically constrained within the cap between the first retention structure and the second retention structure.

Abstract: A method for soldering a die obtained using the semiconductor technique with a leadframe, comprising the steps of providing a leadframe, which has at least one surface made at least partially of copper; providing a die, which has at least one surface coated with a metal layer; applying to the surface a solder alloy comprising at least 40 wt % of tin or at least 50% of indium or at least 50% of gallium, without lead, and heating the alloy to a temperature of at least 380° C. to form a drop of solder alloy; providing a die, which has at least one surface coated with a metal layer; and setting the metal layer in contact with the drop of solder alloy to form the soldered connection with the leadframe. Moreover, a device obtained with said method is provided.

Abstract: A phase-change memory device column decoder is divided into two portions that can be governed independently of one another, and the driving signals of the two portions are configured so as to guarantee comparable capacitive loads at the two inputs of a sense amplifier in both of the operations of single-ended reading and double-ended reading. In particular, during single-ended reading, the sense amplifier has a first input that receives a capacitive load corresponding to the direct memory cell selected, and a second input that receives a capacitive load associated to a non-selected complementary memory cell.

Abstract: A control system includes a mirror controller generating horizontal and vertical mirror synchronization signals for a mirror based upon a mirror clock signal. Laser modulation circuitry generates horizontal and vertical laser synchronization signals as a function of first and second laser clock signals and generates control signals for a laser that emits a laser beam that impinges on the mirror. First synchronization circuitry receives the horizontal mirror synchronization signal and the horizontal laser synchronization signal, and modifies generation of the first laser clock signal to achieve alignment between the horizontal mirror synchronization signal and horizontal laser synchronization signal. Second synchronization circuitry receives the vertical mirror synchronization signal and the vertical laser synchronization signal, and modifies generation of the second laser clock signal to achieve alignment between the vertical mirror synchronization signal and vertical laser synchronization signal.

Abstract: An embodiment circuit comprises first and second output nodes with an inductor arranged therebetween, and first and second switches coupled to opposed ends of the inductor. The switches are switchable between non-conductive and conductive states to control current flow through the inductor and produce first and second output voltages. The current intensity through the inductor is compared with at least one reference value. Switching control circuitry is coupled with the first and second switches, the first and second output nodes, and current sensing circuitry, which is configured to control the switching frequency of the first and second switches as a function of the output voltages and a comparison at the current sensing circuitry. The switching control circuitry is configured to apply FLL-FFWD processing to produce the reference values as a function of a timing signal, targeting maintaining a constant target value for the converter switching frequency.

Abstract: An embodiment memory device comprises a plurality of memory cells, each exhibiting a transconductance depending on a value of a stored bit, a plurality of bit lines associated with respective groups of memory cells, each bit line configured to flow a respective electric current indicative of the bit stored in a selected memory cell of the respective group of memory cells, and a computing circuit providing an output electric quantity indicative of a linear combination of a plurality of input electric quantities. The computing circuit comprises a biasing stage configured to bias each bit line with a respective input electric quantity, the electric current flowing through each bit line based on a product of the respective input electric quantity and the transconductance of the selected memory cell, and a combining stage for combining the electric currents flowing through the plurality of bit lines thereby obtaining the output electric quantity.

Abstract: The present disclosure is directed to a device configured to detect whether the device is in a bag or being taken out of the bag. The device determines whether the device is in a bag or being taken out of the bag based on motion measurements generated by a motion sensor and electrostatic charge measurements generated by an electrostatic charge sensor. By using both distance measurements and motion measurements, the device is able to detect whether the device is in the bag or being taken out of the bag with high efficiency, accuracy, and robustness.

Abstract: The present disclosure is directed to a device and method for generating and transmitting a TDM signal including both raw data and processed data. The device includes a sensor having a time division multiplexing (TDM) interface. The TDM interface transmits both raw data and processed data in a single TDM signal by reserving one or more slots inside a TDM frame for transmission of the processed data. The sensor also embeds additional information inside a data stream of raw data by repurposing one or more of values of the raw data as an exception code, flag, or another type of notification. The device is also enabled to transmit data, and disabled when not in use in order to conserve power.