Abstract: A method for making a semiconductor device may include forming a first dielectric layer above a semiconductor substrate, forming a first trench in the first dielectric layer, filling the first trench with electrically conductive material, removing upper portions of the electrically conductive material to define a lower conductive member with a recess thereabove, forming a filler dielectric material in the recess to define a second trench. The method may further include filling the second trench with electrically conductive material to define an upper conductive member, forming a second dielectric layer over the first dielectric layer and upper conductive member, forming a first via through the second dielectric layer and underlying filler dielectric material to the lower conductive member, and forming a second via through the second dielectric layer to the upper conductive member.

Abstract: A voltage generator circuit uses a feedback loop to regulate an output voltage at an output node. A pair of opposite conductivity source-follower transistors are coupled to the output node. A first one of the source-follower transistors operates to provide a fast current transient for charging a capacitive load that is switchably connected to the output node. A second one of the source-follower transistor operate under feedback control to regulate the voltage level at the output node.

Abstract: The present disclosure is directed to a leadframe package having a side solder ball contact and methods of manufacturing the same. A plurality of solder balls are coupled to recesses in a leadframe before encapsulation and singulation. After singulation, a portion of each solder ball is exposed on sidewalls of the package. This ensures that the sidewalls of the leads are solder wettable, which allows for the formation of stronger joints when the package is coupled to a substrate. This increased adhesion reduces resistance at the joints and also mitigates the effects of expansion of the components in the package such that delamination is less likely to occur. As a result, packages with a side solder ball contact have increased life cycle expectancies.

Abstract: One or more embodiments are directed to a microfluidic delivery system that dispenses a fluid. The microfluidic delivery system may be provided in a variety of orientations. In one embodiment, the microfluidic delivery system is vertical so that fluid being expelled opposes gravity. In another embodiment, the microfluidic delivery system is orientated sideways so that fluid being expelled has a horizontal component. In yet another embodiment, the microfluidic delivery system faces downward.

Abstract: A protective circuit for an apparatus includes an accelerometer having an output and a microcontroller coupled to the output of the accelerometer. The protective circuit also includes a switch for controlling the apparatus coupled to an output of the microcontroller and a load coupled to the switch. A power source is coupled to the load and the switch. In operation the microcontroller is cable of sending a signal to the switch to turn of power to the load when a dangerous condition as detected from the accelerometer data has occurred.

Abstract: A low voltage to high voltage (LV2HV) conversion circuit has an input configured to receive an input signal (at a relatively low voltage) and an output configured to generate an output signal (at a relatively high voltage). The LV2HV conversion circuit includes a voltage to current conversion circuit referenced to the relatively low voltage and configured to convert a voltage of the input signal to a first current, wherein a magnitude of the first current is dependent on said voltage of the input signal and a gain setting value. A current mirroring circuit mirrors the first current and outputs a second current. A current to voltage conversion circuit converts the second current to a voltage of the output signal. The current mirroring circuit and current to voltage conversion circuit are referenced to the relatively high voltage.

Abstract: Various embodiments provide an optical image stabilization circuit including a drive circuit having a power waveform generator and a power waveform conversion circuit. The power waveform generator generates a power waveform. The power waveform conversion circuit converts the power waveform to a power drive signal. An actuator is then driven by the power drive signal to move a lens accordingly and compensate for any movements and vibrations of a housing of the lens.

Abstract: Various embodiments provide an optical image stabilization circuit including a drive circuit having a power waveform generator and a power waveform conversion circuit. The power waveform generator generates a power waveform. The power waveform conversion circuit converts the power waveform to a power drive signal. An actuator is then driven by the power drive signal to move a lens accordingly and compensate for any movements and vibrations of a housing of the lens.

Abstract: Disclosed herein is a method of operating an electronic device. The method includes activating a first sensing device, and determining a first probabilistic context of the electronic device relative to its surroundings. The method includes outputting the first probabilistic context, and determining a confidence measure of the first probabilistic context. Where the confidence measure of the first probabilistic context is below a threshold, the method includes activating a second sensing device, determining a second probabilistic context of the electronic device relative to its surroundings. outputting the second probabilistic context, and determining a confidence measure of the second probabilistic context. Where the confidence measure of the second probabilistic context is above the threshold, the second sensing device is deactivated and the method returns to determining the first probabilistic context.

Abstract: A vertical tunneling FET (TFET) provides low-power, high-speed switching performance for transistors having critical dimensions below 7 nm. The vertical TFET uses a gate-all-around (GAA) device architecture having a cylindrical structure that extends above the surface of a doped well formed in a silicon substrate. The cylindrical structure includes a lower drain region, a channel, and an upper source region, which are grown epitaxially from the doped well. The channel is made of intrinsic silicon, while the source and drain regions are doped in-situ. An annular gate surrounds the channel, capacitively controlling current flow through the channel from all sides. The source is electrically accessible via a front side contact, while the drain is accessed via a backside contact that provides low contact resistance and also serves as a heat sink. Reliability of vertical TFET integrated circuits is enhanced by coupling the vertical TFETs to electrostatic discharge (ESD) diodes.

Abstract: A semiconductor package includes a substrate, a die, an insulating die attach film, a dummy die, a conductive layer, and an electrically conductive molding compound or encapsulant. The first surface of the substrate includes a plurality of internal leads, and the second surface of the substrate includes a plurality of external electrically conductive pads and an electrically conductive ground terminal. A non-conductive flow over wire die attach film is placed to surround and encase the die. The dummy die overlies the die and a conductive layer overlies the dummy die. The electrically conductive molding compound is formed to encase the various components of the semiconductor device. The electrically conductive molding compound is electrically coupled to the electrically conductive ground terminal and the conductive layer forming an EMI shield for the die in the package.

Abstract: Various embodiments provide an optical image stabilization circuit that synchronizes its gyroscope and drive circuit using gyroscope data ready signals and gyroscope reset signals. In response to a gyroscope data ready signal, the optical image stabilization circuit synchronously obtains position measurements of a camera lens when power drive signals are not transitioning from one power level to another power level, and synchronously transitions the power drive signals simultaneously with gyroscope reset signals. By synchronizing the gyroscope and the drive circuit, the gyroscope and other onboard sensing circuits are isolated from noise generated by the drive circuit.

Abstract: One or more embodiments are directed to a microfluidic assembly that includes an interconnect substrate coupled to a microfluidic die. In one embodiment, the microfluidic die includes a ledge with a plurality of bond pads. The microfluidic assembly further includes an interconnect substrate having an end resting on the ledge proximate the bond pads. In another embodiment, the interconnect substrate abuts a side surface of the ledge or is located proximate the ledge. Conductive elements couple the microfluidic die to contacts of the interconnect substrate. Encapsulant is located over the conductive elements, the bond pads, the contacts.

Abstract: A semiconductor device may include a circuit board having an opening, and a frame. The frame may have an IC die pad in the opening, and arms extending outwardly from the IC die pad and coupled to the circuit board. The semiconductor device may include an IC mounted on the IC die pad, bond wires coupling the circuit board with the IC, and encapsulation material surrounding the IC, the bond wires, and the arms.

Abstract: A method for making a semiconductor device may include bonding a top lead frame component, having recesses, with a bottom lead frame component to form a lead frame, the top and bottom lead frame components each including metal. The method may include mounting an IC on the lead frame, encapsulating the IC and the lead frame, and removing portions of the bottom lead frame component to define contacts for the IC.

Abstract: Stress is introduced into the channel of an SOI FinFET device by transfer directly from a metal gate. In SOI devices in particular, stress transfer efficiency from the metal gate to the channel is nearly 100%. Either tensile or compressive stress can be applied to the fin channel by choosing different materials to be used in the gate stack as the bulk gate material, a gate liner, or a work function material, or by varying processing parameters during deposition of the gate or work function materials. P-gates and N-gates are therefore formed separately. Gate materials suitable for use as stressors include tungsten (W) for NFETs and titanium nitride (TiN) for PFETs. An optical planarization material assists in patterning the stress-inducing metal gates. A simplified process flow is disclosed in which isolation regions are formed without need for a separate mask layer, and gate sidewall spacers are not used.

Abstract: A memory cell includes a substrate layer, with a plurality of silicided semiconductor fins stacked on the substrate layer and spaced apart from one another. A first metal liner layer is stacked on the plurality of silicided semiconductor fins and on the substrate layer. A plurality of first contact pillars are stacked on the first metal liner layer adjacent a different respective one of the plurality of silicided semiconductor fins. A configurable resistance structure covers portions of the first metal liner layer that are stacked on the substrate layer and portions of the first metal liner layer that are stacked on each of the plurality of silicided semiconductor fins. A metal fill layer is stacked on the configurable resistance structure. A plurality of second contact pillars is stacked on the metal fill layer adjacent a space between a different pair of adjacent silicided semiconductor fins of the plurality thereof.

Abstract: Embodiments of the present disclosure include a method of operating an arc fault detection system, an arc fault detection system, and a system. An embodiment is a method of operating an arc fault detection system coupled to a power line, the method including determining one or more arc fault detection windows in power line signals on the power line, the power line signals comprising a communication signal and an alternating current (AC) power signal. The method further includes receiving the power line signals from the power line during the one or more arc fault detection windows, and performing arc fault detection processing on the received power line signals.

Abstract: The present disclosure is directed to a microfluidic die that includes ejection circuitry and one time programmable memory with a minimal number of contact pads to external devices. The die includes a relatively large number of nozzles and a relatively small number of contact pads. The die includes decoding circuitry that utilizes the small number of contact pads to control the drive and ejection of the nozzles and the reading/writing of the memory with the same contact pads.

Abstract: An electronic device described herein includes a sensing unit having at least one sensor to acquire sensing data. An associated computing device extracts sensor specific features from the sensing data, and generates a motion activity vector, a voice activity vector, and a spatial environment vector as a function of the sensor specific features. The motion activity vector, voice activity vector, and spatial environment vector are processed to determine a base level context of the electronic device relative to its surroundings, with the base level context having aspects each based on the motion activity vector, voice activity vector, and spatial environment vector. Meta level context of the electronic device relative to its surroundings is determined as a function of the base level context, with the meta level context being at least one inference made from at least two aspects of the plurality of aspects of the base level context.