Abstract: An integrated circuit system-on-chip (SOC) includes a semiconductor substrate, a plurality of components made up of transistors formed in the substrate, and a plurality of interconnection lines providing electrical connectivity among the components. Use of a channel-less design eliminates interconnection channels on the top surface of the chip. Instead, interconnection lines are abutted to one another in a top layer of metallization, thus preserving 5-10% of chip real estate. Clock buffers that are typically positioned along interconnection channels between components are instead located within regions of the substrate that contain the components. Design rules for channel-less integrated circuits permit feed-through interconnections and exclude multi-fanout interconnections.

Abstract: Disclosed herein is a test circuit for a device under test. The test circuit includes a test data source and a test data target. A debug chain is coupled between the test data source and test data target, and operates in either a clock debug mode or a test mode. The debug chain, when in the test mode, is deactivated. The debug chain, when in the clock debug mode, receives the test pattern data from the test data source and stores the test pattern data, generates a clock debug signature from the stored test pattern data while clocked by a test clock, and outputs the clock debug signature to the test data target, the clock debug signature indicative of whether the test clock is operating properly.

Abstract: Disclosed herein is a test circuit for a device under test. The test circuit includes a scan chain configured to receive test pattern data and to shift the test pattern data to the device under test, and being clocked by a reference clock, and a clock circuit configured to operate in either a clock generation mode or a frequency determination mode. The clock circuit, when in the clock generation mode and when the test circuit is in a normal mode of operation, is configured to pass a first clock signal to the device under test. The clock circuit, when in the clock generation mode and when the test circuit is in a test mode of operation, is configured to pass the reference clock to the device under test. The clock circuit, when in the frequency determination mode, counts a frequency of the first clock signal.

Abstract: A tunneling transistor is implemented in silicon, using a FinFET device architecture. The tunneling FinFET has a non-planar, vertical, structure that extends out from the surface of a doped drain formed in a silicon substrate. The vertical structure includes a lightly doped fin defined by a subtractive etch process, and a heavily-doped source formed on top of the fin by epitaxial growth. The drain and channel have similar polarity, which is opposite that of the source. A gate abuts the channel region, capacitively controlling current flow through the channel from opposite sides. Source, drain, and gate terminals are all electrically accessible via front side contacts formed after completion of the device. Fabrication of the tunneling FinFET is compatible with conventional CMOS manufacturing processes, including replacement metal gate and self-aligned contact processes. Low-power operation allows the tunneling FinFET to provide a high current density compared with conventional planar devices.

Abstract: The present disclosure is directed to a leadframe package having solder wettable sidewalls that is formed using a pre-molded leadframe and methods of manufacturing the same. A metal plated leadframe with a plurality of recesses and a plurality of apertures is placed into a top and bottom mold tool. A molding compound is then formed in the plurality of recesses and apertures in the leadframe to form a pre-molded leadframe. A plurality of die and wires are coupled to the pre-molded leadframe and the resulting combination is covered in an encapsulant. Alternatively, a bare leadframe can be processed and the metal layer can be applied after encapsulation. A saw or other cutting means is used for singulation to form leadframe packages. Each resulting leadframe package has a solder wettable sidewall for improving the strength of solder joints between the package and a circuit board.

Abstract: Upstream burst transmit times are dynamically communicated to the transmit unit in grants issued over time and in any order. A critical parameter is when to trigger the operation to order the buffered data stream for transmission. If the ordering operation is triggered too soon, a later grant of an earlier burst transmit time may not be accounted for and the subsequent transmission could violate the transmission order rule. If the ordering operation is triggered too late, the decision to transmit a burst at an earlier burst transmit time may violate the margin rule. To address these concerns, a fetch offset time in advance of each granted burst transmit time is assigned. As each fetch offset time is sequentially reached, a next partial data portion of the buffered data stream is prepared for burst communication.

Abstract: A semiconductor substrate includes a doped region. A premetallization dielectric layer extends over the semiconductor substrate. A first metallization layer is disposed on a top surface of the premetallization dielectric layer. A metal contact extends from the first metallization layer to the doped region. The premetallization dielectric layer includes sub-layers, and the first metal contact is formed by sub-contacts, each sub-contact formed in one of the sub-layers. Each first sub-contact has a width and a length, wherein the lengths of the sub-contacts forming the metal contact are all different from each other.

Abstract: A low voltage to high voltage (LV2HV) conversion circuit has an input configured to receive an input signal (at a relatively low voltage) and an output configured to generate an output signal (at a relatively high voltage). The LV2HV conversion circuit includes a voltage to current conversion circuit referenced to the relatively low voltage and configured to convert a voltage of the input signal to a first current, wherein a magnitude of the first current is dependent on said voltage of the input signal and a gain setting value. A current mirroring circuit mirrors the first current and outputs a second current. A current to voltage conversion circuit converts the second current to a voltage of the output signal. The current mirroring circuit and current to voltage conversion circuit are referenced to the relatively high voltage.

Abstract: A method for forming fins includes growing a SiGe layer and a silicon layer over a surface of a bulk Si substrate, patterning fin structures from the silicon layer and the SiGe layer and filling between the fin structures with a dielectric fill. Trenches are formed to expose end portions of the fin structures. A first region of the fin structures is blocked off. The SiGe layer of the fin structures of a second region is removed by selectively etching the fin structures from the end portions to form voids, which are filled with dielectric material. The silicon layer of the fin structures is exposed. The SiGe layer in the first region is thermally oxidized to drive Ge into the silicon layer to form SiGe fins on an oxide layer in the first region and silicon fins on the dielectric material in the second region.

Abstract: Methods and structures for forming a localized, strained region of a substrate are described. Trenches may be formed at boundaries of a localized region of a substrate. An upper portion of sidewalls at the localized region may be covered with a covering layer, and a lower portion of the sidewalls at the localized region may not be covered. A converting material may be formed in contact with the lower portion of the localized region, and the substrate heated. The heating may introduce a chemical species from the converting material into the lower portion, which creates stress in the localized region. The methods may be used to form strained-channel finFETs.

Abstract: An electronic device includes a ranging light source and a reflected light detector. A logic circuit causes the ranging light source to emit ranging light at a target. Reflected light from the target is detected using the reflected light detector, with the reflected light being a portion of the ranging light that reflects from the target back toward the reflected light detector. An intensity of the reflected light is determined using the reflected light detector. A distance to the target is determined based upon time elapsed between activating the ranging light source and detecting the reflected ranging light. Reflectance of the target is calculated, based upon the intensity of the reflected light and the distance to the target.

Abstract: A fin of silicon-germanium material is formed and covered with an epitaxially grown layer of silicon material. A dummy transistor gate is then formed to extend over a channel of the fin. Sidewall spacers are formed on each side of the dummy transistor gate and directly on top of the expitaxial silicon layer. Epitaxially grown raised source and drain regions are formed on each side of the dummy transistor gate adjacent the sidewall spacers. The dummy transistor gate and a portion of the epitaxial silicon layer (underneath said dummy transistor gate) are removed and replaced by a metal gate.

Abstract: A network services provider grants a subscription to a user for use of mobile network services to communicate voice, data, and text information with a specific mobile device. Mobile devices store one or more subscriptions, each of which may be activated. An activated subscription stored in the mobile device is now made portable. The user wants to pass the portable subscription from a first mobile device to a second mobile device. The user forms a first communicative relationship between the first mobile device and a second mobile device and receives from the second mobile device identification information associated with the second mobile device. The first mobile device passes the identification information to the network services provider and receives a confirmation. The user forms a second communicative relationship between the first mobile device and the second mobile device, and the second mobile device confirms activation of the portable subscription.

Abstract: A method for channel formation in a fin transistor includes removing a dummy gate and dielectric from a dummy gate structure to expose a region of an underlying fin and depositing an amorphous layer including Ge over the region of the underlying fin. The amorphous layer is oxidized to condense out Ge and diffuse the Ge into the region of the underlying fin to form a channel region with Ge in the fin.

Abstract: The present disclosure is directed to a device and method for reducing the resistance of the middle of the line in a transistor. The transistor has electrical contacts formed above, and electrically connected to, the gate, drain and source. The electrical contact connected to the gate includes a tungsten contact member deposited over the gate, and a copper contact deposited over the tungsten contact member. The electrical contacts connected to the drain and source include tungsten portions deposited over the drain and source regions, and copper contacts deposited over the tungsten portions.

Abstract: A multi-fin FINFET device may include a substrate and a plurality of semiconductor fins extending upwardly from the substrate and being spaced apart along the substrate. Each semiconductor fin may have opposing first and second ends and a medial portion therebetween, and outermost fins of the plurality of semiconductor fins may comprise an epitaxial growth barrier on outside surfaces thereof. The FINFET may further include at least one gate overlying the medial portions of the semiconductor fins, a plurality of raised epitaxial semiconductor source regions between the semiconductor fins adjacent the first ends thereof, and a plurality of raised epitaxial semiconductor drain regions between the semiconductor fins adjacent the second ends thereof.

Abstract: A strip of sacrificial semiconductor material is formed on top of a non-sacrificial semiconductor material substrate layer. A conformal layer of the non-sacrificial semiconductor material is epitaxially grown to cover the substrate layer and the strip of sacrificial semiconductor material. An etch is performed to selectively remove the strip of sacrificial semiconductor material and leave a hollow channel surrounded by the conformal layer and the substrate layer. Using an anneal, the conformal layer and the substrate layer are reflowed to produce an optical waveguide structure including the hollow channel.

Abstract: A first differential amplifier output drives a first winding of a stepper motor and a second differential amplifier output drives a second winding of the stepper motor. Inputs of the first and second differential amplifiers receive input drive signals generated by either a digital to analog converter or a pulse width modulator, where the input drive signals are phase offset sinusoids. Current flowing through a stepper motor winding is sensed to generate a current sense signal. A stall sensing circuit processes the current sense signal to determine whether the stepper motor has stalled by: taking a first derivative of the current sense signal to generate a first derivative signal; taking a second derivative of the current sense signal to generate a second derivative signal; and processing one or more of the current sense signal, the first derivative signal and the second derivative signal to detect a stepper motor stall condition.

Abstract: A method for forming a complementary metal oxide semiconductor (CMOS) semiconductor device includes providing a stressed silicon-on-insulator (sSOI) wafer comprising a stressed semiconductor layer having first and second laterally adjacent stressed semiconductor portions. The first stressed semiconductor portion defines a first active region. The second stressed semiconductor portion is replaced with an unstressed semiconductor portion. The unstressed semiconductor portion includes a first semiconductor material. The method further includes driving a second semiconductor material into the first semiconductor material of the unstressed semiconductor portion defining a second active region.

Abstract: It is recognized that, because of its unique properties, graphene can serve as an interface with biological cells that communicate by an electrical impulse, or action potential. Responding to a sensed signal can be accomplished by coupling a graphene sensor to a low power digital electronic switch that is activatable by the sensed low power electrical signals. It is further recognized that low power devices such as tunneling diodes and TFETs are suitable for use in such biological applications in conjunction with graphene sensors. While tunneling diodes can be used in diagnostic applications, TFETs, which are three-terminal devices, further permit controlling the voltage on one cell according to signals received by other cells. Thus, by the use of a biological sensor system that includes graphene nanowire sensors coupled to a TFET, charge can be redistributed among different biological cells, potentially with therapeutic effects.