Abstract: A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, and source and drain regions adjacent the channel region to generate shear and normal strain on the channel region. A semiconductor device may include a substrate, a fin above the substrate and having a channel region therein, source and drain regions adjacent the channel region, and a gate over the channel region. The fin may be canted with respect to the source and drain regions to generate shear and normal strain on the channel region.

Abstract: Channel-to-substrate leakage in a FinFET device is prevented by inserting an insulating layer between the semiconducting channel and the substrate during fabrication of the device. Similarly, source/drain-to-substrate leakage in a FinFET device is prevented by isolating the source/drain regions from the substrate by inserting an insulating layer between the source/drain regions and the substrate. Forming such an insulating layer isolates the conduction path from the substrate both physically and electrically, thus preventing current leakage. In an array of semiconducting fins made up of a multi-layer stack, the bottom material is removed thus yielding a fin array that is suspended above the silicon surface. A resulting gap underneath the remaining top fin material is then filled with oxide to better support the fins and to isolate the array of fins from the substrate.

Abstract: An improved transistor with channel epitaxial silicon. In one aspect, a method of fabrication includes: forming a gate stack structure on an epitaxial silicon region disposed on a substrate, a width dimension of the epitaxial silicon region approximating a width dimension of the gate stack structure; and growing a raised epitaxial source and drain from the substrate, the raised epitaxial source and drain in contact with the epitaxial silicon region and the gate stack structure. For a SRAM device, further: removing an epitaxial layer in contact with the silicon substrate and the raised source and drain and to which the epitaxial silicon region is coupled leaving a space above the silicon substrate and under the raised epitaxial source and drain; and filling the space with an insulating layer and isolating the raised epitaxial source and drain and a channel of the transistor from the silicon substrate.

Abstract: A security module has an assigned unique electronic identifier. The security module has a communication interface, a non-volatile memory, and a processing unit coupled to the communication interface and the non-volatile memory. One or more unassigned secure domains are formed in the non-volatile memory, and each of the unassigned secure domains has an assigned unique application identifier (AID). Each of the unassigned secure domains is accessible via a respective first security value, and using the respective first security value, each of the unassigned secure domains can be assigned to a service provider before or after the security module is deployed.

Abstract: A method of making a structurally stable SiGe-on-insulator FinFET employs a silicon nitride liner to prevent de-stabilizing oxidation at the base of a SiGe fin. The silicon nitride liner blocks access of oxygen to the lower corners of the fin to facilitate fabrication of a high-concentration SiGe fin. The silicon nitride liner is effective as an oxide barrier even if its thickness is less than about 5 nm. Use of the SiN liner provides structural stability for fins that have higher germanium content, in the range of 25-55% germanium concentration.

Abstract: An electronic device includes a power switch having a control terminal coupled to a first node, a first conduction terminal coupled to a second node, and a second conduction terminal coupled to a third node. A monitoring circuit has a first input coupled to the first node and a second input coupled to the second node, the monitoring circuit to generate a monitor signal indicating gate oxide stress on the power switch as a function of first and second voltages received at the first and second inputs thereof. A protection circuit actuates to protect the power switch from the gate oxide stress when the monitor signal indicates the gate oxide stress on the power switch. The monitoring signal is generated based upon a comparison of currents generated based upon the voltages at the first and second node, as well as a current generated based upon a programmable reference voltage.

Abstract: The present disclosure is directed to a ceramic substrate that includes a plurality of contact pads, a plurality of electrical traces, and a microelectromechanical die. Contacts on the die are coupled to the plurality of contact pads through the plurality of electrical traces. The substrate also includes a plurality of memory bits formed directly on the substrate. Each memory bit is coupled between a first one of the contact pads and a second one of the contact pads.

Abstract: A method of forming a via to an underlying layer of a semiconductor device is provided. The method may include forming a pillar over the underlying layer using a sidewall image transfer process. A dielectric layer is formed over the pillar and the underlying layer; and a via mask patterned over the dielectric layer, the via mask having a mask opening at least partially overlapping the pillar. A via opening is etched in the dielectric layer using the via mask, the mask opening defining a first lateral dimension of the via opening in a first direction and the pillar defining a second lateral dimension of the via opening in a second direction different than the first direction. The via opening is filled with a conductor to form the via. A semiconductor device and via structure are also provided.

Abstract: A first differential amplifier output drives a first winding of a stepper motor and a second differential amplifier output drives a second winding of the stepper motor. Inputs of the first and second differential amplifiers receive input drive signals generated by either a digital to analog converter or a pulse width modulator, where the input drive signals are phase offset sinusoids. Current flowing through a stepper motor winding is sensed to generate a current sense signal. A stall sensing circuit processes the current sense signal to determine whether the stepper motor has stalled by: taking a first derivative of the current sense signal to generate a first derivative signal; taking a second derivative of the current sense signal to generate a second derivative signal; and processing one or more of the current sense signal, the first derivative signal and the second derivative signal to detect a stepper motor stall condition.

Abstract: A method includes acquiring magnetic data from a magnetometer, processing the magnetic data to perform robust calibration, and generating optimum calibration parameters using a calibration status indicator. To that end, the method includes generating a calibration status indicator as a function of time elapsed since a last calibration and variation in total magnetic field in previously stored magnetic data, detecting anomalies, and extracting a sparse magnetic data set using comparison between the previously stored magnetic data and the magnetic data. Calibration parameters are generated for the magnetometer using a calibration method as a function of the magnetic data set. The calibration parameters are stored based on performing a validation and stability check on the calibration parameters, and weighted with the previously stored calibration parameters to produce weighted calibration parameters.

Abstract: A method is for making a semiconductor device. The method may include forming fins above a substrate, each fin having an upper fin portion including a first semiconductor material and a lower fin portion including a dielectric material. The method may include forming recesses into sidewalls of each lower fin portion to expose a lower surface of a respective upper fin portion, and forming a second semiconductor layer surrounding the fins including the exposed lower surfaces of the upper fin portions. The second semiconductor layer may include a second semiconductor material to generate stress in the first semiconductor material.

Abstract: A transistor is fabricated by growing an epitaxial layer of semiconductor material on a semiconductor layer and forming an opening extending through the epitaxial layer at the gate location. This opening provides, from the epitaxial layer, a source epitaxial region on one side of the opening and a drain epitaxial region on an opposite side of the opening. The source epitaxial region and a first portion of the semiconductor layer underlying the source epitaxial region are annealed into a single crystal transistor source region. Additionally, the drain epitaxial region and a second portion of the semiconductor layer underlying the drain epitaxial region are annealed into a single crystal transistor drain region. A third portion of the semiconductor layer between the transistor source and drain regions forms a transistor channel region. A transistor gate electrode is then formed in the opening above the transistor channel region.

Abstract: The present disclosure is directed to a semiconductor die on a tapeless leadframe and covered in encapsulant. The semiconductor package includes leads formed from the leadframe and electrically coupled to the semiconductor die, the leads being accessible through electrical contacts embedded in the encapsulant. Openings between the leads and the leadframe are formed from etching recesses from opposing sides of the leadframe. The resulting openings have non-uniform sidewalls. The leadframe is further electrically or thermally coupled to electrical contacts embedded in the encapsulant. The embedded electrical contacts forming a land grid array.

Abstract: An embodiment is a system including a first wireless charging pad coupled to a wireless charging system and an energy source, the first wireless charging pad being configured to transmit an energy by a magnetic field. The system further includes a second wireless charging pad coupled to a second system, the second wireless charging pad configured to receive at least a portion of the energy from the first wireless charging system for operating the second system. Further embodiments include a least one of an electronic compass configured to provide alignment data of the first and second wireless charging pads, and an interface configured to receive the alignment data and affect an alignment of the first and second wireless charging pads.

Abstract: Disclosed herein is a sensor chip including at least one sensing device and a control circuit. The control circuit is configured to receive configuration data as input, and acquire data from the at least one sensing device in accordance with the configuration data. The control circuit classifies a context of the at least one sensing device relative to its surroundings based on analysis of the acquired data in accordance with the configuration data.

Abstract: The present disclosure is directed to a leadframe package having a side solder ball contact and methods of manufacturing the same. A plurality of solder balls are coupled to recesses in a leadframe before encapsulation and singulation. After singulation, a portion of each solder ball is exposed on sidewalls of the package. This ensures that the sidewalls of the leads are solder wettable, which allows for the formation of stronger joints when the package is coupled to a substrate. This increased adhesion reduces resistance at the joints and also mitigates the effects of expansion of the components in the package such that delamination is less likely to occur. As a result, packages with a side solder ball contact have increased life cycle expectancies.

Abstract: Described herein is a method of operating an electronic device that includes collecting initial motion activity data from at least one sensor of the electronic device, and generating a initial probabilistic context of the electronic device relative to its surroundings from the initial collected motion activity data using a motion activity classifier function. The collected motion activity data is stored in a training data set, and the motion activity classifier function is updated using the training data set. The method also includes collecting subsequent motion activity data from the at least one sensor of the electronic device, and generating a subsequent probabilistic context of the electronic device relative to its surroundings from the subsequently collected motion activity data using the updated motion activity classifier function.

Abstract: A method forms a vertical slit transistor includes raised source, drain, and channel regions in a semiconductor substrate. Two gate electrodes are formed adjacent respective sidewalls of the semiconductor substrate. The method forms dielectric material separating the gate electrodes from the source and drain regions.

Abstract: Embodiments are directed to a method of fabricating a portion of a nanowire field effect transistor (FET). The method includes forming a sacrificial layer and a nanowire layer, removing a sidewall portion of the sacrificial layer and forming a diffusion block in a space that was occupied by the removed sidewall portion of the sacrificial layer. The method further includes forming a source region and a drain region such that the diffusion block is between the sacrificial layer and at least one of the source region and the drain region, and removing the sacrificial layer using a sacrificial layer removal process, wherein the diffusion block prevents the sacrificial layer removal process from also removing portions of at least one of the source region and the drain region.

Abstract: A method of making an inkjet print head may include forming, by sawing with a rotary saw blade, first discontinuous slotted recesses in a first surface of a wafer. The first discontinuous slotted recesses may be arranged in parallel, spaced apart relation. The method may further include forming, by sawing with the rotary saw blade, second discontinuous slotted recesses in a second surface of the wafer aligned and coupled in communication with the first continuous slotted recesses to define through-wafer channels. In another embodiment, the first and second plurality of discontinuous recesses may be formed by respective first and second rotary saw blades.