Abstract: A method that includes forming an opening between at least one first electrode and a second electrode by forming a recess in a first electrode layer, the recess having sidewalls that correspond to a surface of the at least one first electrode, forming a first sacrificial layer on the sidewalls of the recess, the first sacrificial layer having a first width that corresponds to a second width of the opening, forming a second electrode layer in the recess that corresponds to the second electrode, and removing the first sacrificial layer to form the opening between the second electrode and the at least one first electrode.

Abstract: A method includes growing a first oxide region concurrently with a second oxide region in a substrate and forming an inlet path to the first oxide region, the inlet path exposing a first surface of the first oxide region. The method also includes removing the first oxide region to form a chamber, forming a first MOS transistor adjacent the second oxide region, and forming a second MOS transistor separated from the first MOS transistor by the second oxide region.

Abstract: A bi-directional protection circuit employs a single comparator for detecting fault conditions. Diodes are coupled between a detection node and voltage dividers setting references for inverting and non-inverting comparator inputs, each diode forward biased during one of the positive and negative halves of the alternating current input signal cycle and coupling the detection node to a respective one of the inverting and non-inverting comparator inputs, and reverse biased during the other of the positive and negative halves and decoupling the detection node from the other of the inverting and non-inverting comparator inputs. Upon an overcurrent condition during the positive half, a voltage at the inverting comparator input is drawn above the reference voltage at the non-inverting input. Upon an overcurrent condition during the negative half, a voltage at the non-inverting comparator input is drawn below the reference voltage at the inverting input.

Abstract: A self-powered tire pressure sensor device. The sensor device includes a power circuit, an air pressure measurement sensor, a signal circuit and a wireless transmission circuit. The power circuit converts mechanical acceleration experienced by the device into electrical potential using an electromechanical transducer. Mechanical acceleration due to collisions between the mobile sensor device and the wall of the tire while the tire is in motion cause the transducer to emit a small electrical charge. An electrical potential storage element in the power circuit accumulates and stores the charge as electrical potential. Alternatively the power circuit receives and converts electromagnetic energy into electrical potential. The electrical potential powers an air pressure measurement sensor within the tire. A signal circuit and wireless transmission circuit transmit the measurement to a chassis-mounted receiver, which makes the tire pressure measurement available to systems remote from the tire.

Abstract: An apparatus and method are disclosed for temperature measurement that includes performing a first ?Vbe measurement of a first temperature of a diode circuit comprising a transistor and, subsequently, performing a first Vbe measurement of a second temperature of the diode circuit. A temperature difference is calculated between the second temperature and the first temperature. If the temperature difference is not greater than a predetermined amount, a second Vbe measurement of a third temperature of the diode circuit is subsequently performed. If the temperature difference is greater than the predetermined amount, a second ?Vbe measurement of the second temperature of the diode circuit is performed.

Abstract: According to one embodiment, a semiconductor substrate is provided having at least two transistor regions formed therein. Overlying the channel regions is a gate dielectric and transistor gate electrodes overly the gate dielectric and are positioned overlying the channel regions. Source and drain regions are formed on either side of the channel regions to create a transistor structure. In order to provide isolation between transistors in the semiconductor substrate, a trench is formed in the substrate. A strain-inducting layer is then deposited over the transistor structures and into the trench in the semiconductor substrate. A high-stress nitride layer is one type of material which is suitable for forming the strain-inducing layer.

Abstract: Methods and apparatus for transmitting a video frame in wireless local area network communications are proposed. In one aspect, a method generates and transmits an IEEE 802.11 media access control (MAC) frame containing a video transport stream (VTS) frame. The VTS frame includes a video frame and a VTS control header that includes control information with respect to the video frame.

Abstract: An apparatus and method are disclosed for a measurement system that reports as a measurement result a confidence interval associated with a histogram bin into which a measurement value falls. The confidence interval is calculated from a subset of training values that also fall within the histogram bin. A training process may be performed in which a plurality of training values is obtained and a mean and standard deviation of the values determined. A plurality of histogram bins are defined from the mean and standard deviation and, for the subsets of training values that fall into each bin, confidence intervals calculated. A need to perform the training process may be determined from a plurality of measured values.

Abstract: A method for uniformly planarizing a wafer that includes determining a first wafer warped value at a first zone on the wafer, determining a second wafer warped value at a second zone on the wafer, and calculating a pressure difference based on the first and second wafer warped values at the first and second zones is provided. The method also includes performing a chemical mechanical polishing of the wafer, applying a first pressure based on the first wafer warped value to the wafer at the first zone during the chemical mechanical polishing, and applying a second pressure based on the second wafer warped value to the wafer at the second zone during the chemical mechanical polishing, a difference between the first pressure and the second pressure based on the pressure difference.

Abstract: A thermoelectric device includes a plurality of thin-film thermoelectric elements. Each thin-film thermoelectric element is a Seebeck-Peltier device. The thin-film thermoelectric elements are electrically coupled in parallel with each other. The thermoelectric device may be fabricated using conventional semiconductor processing technologies and may be a thin-film type device.

Abstract: An SRAM having two capacitors connected in series between respective bit storage nodes of each memory cell. The two inverters of the memory cell are powered by a positive voltage and a low voltage. The two capacitors are connected to each other at a common node. A leakage current generator is coupled to the common node. The leakage current generator supplies to the common node a leakage current to maintain a voltage which is approximately halfway between the voltages of the high and low SRAM supplies.

Abstract: A relaxation oscillator includes a capacitor connected to a comparator input, current sources switched to supply power to the capacitor based on an output of the comparator, and a duplicate integrator shifting a voltage on the capacitor to offset a propagation delay through the comparator. The duplicate integrator includes current sources and a capacitor matching and switched in tandem with those within the relaxation oscillator, plus an additional current source, and is selectively switched into connection with the comparator input. By canceling the comparator propagation delay, the oscillator output frequency can be stably controlled through selection of resistive and capacitive values, using cheaper technology and tolerating large temperature, voltage and process variations.

Abstract: A system and method for correcting errors in an ECC block using soft-decision data. In an embodiment, a soft-decision ECC decoding method, uses “soft” data indicative of how reliable bits of data are when read out. Such reliability information may be used to identify particular symbols with a higher likelihood of error such that these symbols may be changed in an attempt to reduce the total number of errors in the data. In an embodiment, a soft-decision ECC decoding path may include a reliability checker operable to receive bits of data read from a data store and operable to associate a reliability factor with each bit of data. Then, an update module may iteratively change bits or groups of bits based upon an ordering of the reliability factors.

Abstract: A method that includes forming a chamber in a substrate, forming a silicon layer overlying the chamber, etching the silicon layer to remove selected regions and retain a selected portion overlying the chamber, the selected portion being at a location and having dimensions that correspond to a location and to dimensions of a nozzle, and forming a first metal layer adjacent to the selected portion. The method also includes forming a path in the substrate to expose the chamber concurrently with removing the selected portion of the silicon layer to expose the nozzle, the nozzle being in fluid communication with the path, the chamber, and a surrounding environment.

Abstract: A method includes forming a recess in a first surface of a substrate, the recess having a width, depth, and height selected to correspond to a width, depth, and height of a fluid chamber, forming a sacrificial material in the recess, forming a first heater element, forming a metal layer overlying the first heater element, and forming a nozzle opening in the metal layer to expose the sacrificial material. The method also includes forming a path from a second surface of the substrate to expose the sacrificial material and removing the sacrificial material from the recess to expose the chamber with the selected width, depth, and height, the chamber in fluid communication with the path, the nozzle opening, and a surrounding environment.

Abstract: A substrate processing apparatus includes an enclosure defining a reaction chamber, a substrate holder in the reaction chamber, and a door assembly. The door assembly has a substrate entrance with a tunnel extending to the reaction chamber, a door movable with respect to the substrate entrance, and a pattern of features. The features are located along a portion of the substrate entrance defining the tunnel. The features promote sticking of processing byproducts, produced in the reaction chamber, to the substrate entrance. A door mates with the entrance to form a seal that reduces flow through the tunnel to control the amount of byproducts that enter the tunnel.

Abstract: A system and method for receiving character entries in mobile computer devices uses an improved keypad. The keypad uses a dual key press method in which each key of the keypad includes a unique key definition when it alone is pressed. Each of two adjacent keys of the keypad also include a unique key definition when the two adjacent keys are pressed at substantially the same time. A keypad controller receives inputs from the keys and decodes the single key entries and the dual key entries. The keypad occupies a relatively small keypad area while providing full size keys for the user. The keypad also has a mode key that enables a user to change the alphabet mode of the keypad to a numerical mode.

Abstract: A system and method for providing a constant current source driver for a light emitting diode string. The converter includes a current sensor that derives feedback signal corresponding to a peak current through the light emitting diode string. The feedback signal is used by a controller to vary a duty cycle of the controller to regulate the average current. The controller is operable to regulate the average current as the number of light emitting diodes is increased and/or decreased.

Abstract: A reliable and deterministic video communication protocol is provided. In one aspect, a method of transmitting data, audio or video frames in a basic service set having a plurality of stations in a wireless local area network transmits a transmit opportunity information element to reserve a transmit opportunity time interval. The method further transmits the data, audio or video frames to a number of the stations in the basic service set during the reserved transmit opportunity time interval. In another aspect, a method of transmitting data, audio or video frames in a basic service set having a plurality of stations in a wireless local area network first transmits protection frames to reserve a time interval, then transmits frames during the reserved time interval or during a non-reserved time interval.

Abstract: A semiconductor device wherein a delay chain is integrated; the semiconductor device having a semiconductor layer. The delay chain includes a plurality of delay cells placed in the semiconductor layer and electrically connected to each other so as to form the delay chain. The semiconductor device includes a first and second metal lines respectively connected to a supply voltage and a reference voltage and placed in a longitudinal direction on a surface of the semiconductor layer; each delay cell of the plurality of cells is electrically connected with the first and second metal lines. Any delay cell and its successive or preceding delay cells of the delay chain are placed in a transversal direction with respect to the first or the second metal line.