Abstract: A method to bypass a voltage regulator of a system on a chip (SOC) comprising powering a first power domain using a voltage regulator; powering a second power domain using the voltage regulator; coupling a third power domain with an external voltage source; raising an external voltage supply from the external voltage source above a threshold level of the voltage regulator; coupling the first second power domains to the external voltage source; turning OFF the voltage regulator of the SOC after coupling the first power domain of the SOC and the second power domain of the SOC to the external voltage source; and powering the first power domain of the SOC, the second power domain of the SOC, and the third power domain of the SOC with the external voltage source, the external voltage source bypassing the voltage regulator.

Abstract: The present disclosure is directed to arranging user data memory cells and test memory cells in a configurable memory array that can perform both differential and single ended read operations during memory start-up and normal memory use, respectively. Different arrangements of the user data memory cells and the test memory cells in the memory array result in increased effectiveness of memory array, in terms of area optimization, memory read accuracy and encryption for data security.

Abstract: A method includes receiving, at a master agent, announcements from candidate consumer agents indicating the presence of the candidate consumer agents. Each announcement includes display parameters for a display of the corresponding candidate consumer agent. The method further includes receiving at the master agent content parameters from a producer agent, the content parameters defining characteristics of content to be provided by the consumer agent. A mosaic screen is configured based on the received announcements and the content parameters. This configuring of the mosaic screen includes selecting ones of the consumer agents for which an announcement was received and generating content distribution parameters based on the content parameters and the display parameters of the selected ones of the consumer agents. The generated content distribution parameters are provided to the consumer agent.

Abstract: A time-interleaved analog to digital converter (TI-ADC) includes a first sub-ADC configured to sample and convert an input analog signal to generate a first digital signal and a second sub-ADC configured to sample and convert said input analog signal to generate a second digital signal. Sampling by the second sub-ADC occurs with a time skew mismatch. A multiplexor interleaves the first and second digital signals to generate a third digital signal. A time skew mismatch error determination circuit processes the first and second digital signals to generate a time error corresponding to the time skew mismatch. A slope value of said third digital signal is determined and multiplied by the time error to generate a signal error. The signal error is summed with the third digital signal to generate a digital output signal which eliminates the error due to the time skew mismatch. This correction is performed in real time.

Abstract: A serial peripheral interface (SPI) device includes a serial clock (SCK) pad receiving a serial clock, first and second Schmitt triggers directly electrically connected to the SCK pad to selectively respectively generate first and second clocks in response to rising and falling edges of the serial clock, first and second flip flops clocked by the first and second clocks to output bits of data to a data node, a multiplexer having an input coupled to the data node and an output coupled to driving circuitry, and driving circuitry transmitting data via a master-in-slave-out (MISO) pad.

Abstract: A memory array arranged in multiple columns and rows. Computation circuits that each calculate a computation value from cell values in a corresponding column. A column multiplexer cycles through multiple data lines that each corresponds to a computation circuit. Cluster cycle management circuitry determines a number of multiplexer cycles based on a number of columns storing data of a compute cluster. A sensing circuit obtains the computation values from the computation circuits via the column multiplexer as the column multiplexer cycles through the data lines. The sensing circuit combines the obtained computation values over the determined number of multiplexer cycles. A first clock may initiate the multiplexer to cycle through its data lines for the determined number of multiplexer cycles, and a second clock may initiate each individual cycle. The multiplexer or additional circuitry may be utilized to modify the order in which data is written to the columns.

Abstract: An integrated circuit includes a pulse width modulator. The pulse width modulator includes a multiplexer that receives a plurality of data delay signals. Each of the data delay signals is based on a data signal and a respective clock phase signal. The multiplexer includes a first multiplexer stage and a second multiplexer stage. The first multiplexer stage receives all of the data delay signals and has a relatively large delay. The second multiplexer stage receives to output signals from the first multiplexer stage and has a relatively small delay. The second multiplexer stage outputs a pulse width modulation signal that can have a pulse width corresponding to the offset between two adjacent clock phase signals.

Abstract: Data structure and microcontroller architecture performing binary multiply-accumulate operations using multiple partial copies of weights. Destination-register location, source-register location, and weight-register location are received. Using the weight-register location, a sub-set of the weight bits is copied a select number of times based on a filter index value that is received. Each copy of the sub-set of weights is executed in parallel. Using the source-register location, a sub-set of the input bits is selected based on the size of the sub-set of weights, wherein the sub-set of input bits is shifted one bit from a previous sub-set of input bits. XOR operation is performed on each corresponding bit in the copy of the sub-set of weights with each corresponding bit in the selected sub-set of input bits. In a corresponding destination sub-location, output of each XOR operation is aggregated with each other and with current value of the corresponding destination sub-location.

Abstract: An integrated circuit includes an output pad, and I/O driver that drives data to the output pad, and a predriver that controls the I/O driver. The integrated circuit includes maximum voltage generator that receives a first supply voltage and a second supply voltage and outputs to the predriver a maximum voltage corresponding to the higher of the first supply voltage and the second supply voltage.

Abstract: An integrated circuit includes an input pad and a Schmitt trigger coupled to the input pad. The Schmitt trigger includes a main PMOS branch that charges an intermediate node of the Schmitt trigger responsive to voltage transitions at the input node. The Schmitt trigger includes a charging assistance circuit that helps to rapidly charge the intermediate node of the Schmitt trigger. The charging assistance circuit includes a parallel PMOS branch in parallel with the main PMOS branch.

Abstract: Techniques and systems are provided for implementing a convolutional neural network. One or more convolution accelerators are provided that each include a feature line buffer memory, a kernel buffer memory, and a plurality of multiply-accumulate (MAC) circuits arranged to multiply and accumulate data. In a first operational mode the convolutional accelerator stores feature data in the feature line buffer memory and stores kernel data in the kernel data buffer memory. In a second mode of operation, the convolutional accelerator stores kernel decompression tables in the feature line buffer memory.

Abstract: The present disclosure is directed to a circuit layout of a dual port static random-access-memory (SRAM) cell. The memory cell includes active regions in a substrate, with polysilicon gate electrodes on the active regions to define transistors of the memory cell. The eight transistor (8T) memory cell layout includes a reduced aspect ratio and non-polysilicon bit line discharge path routing by positioning an active region for the first port opposite an active region for the second port and consolidating power line nodes at a central portion of the memory cell.

Abstract: A glitch filter is provided. The glitch filter receives an input signal and sets a voltage level of an intermediary input node in accordance with a state of the input signal. The glitch filter charges or discharges a switched capacitance based on the voltage level of the intermediary input node and charges or discharges a filter capacitance based on a charge of the switched capacitance. The glitch filter sets a state of an output signal based on the charge of the filter capacitance. The glitch filter includes a reset stage that at least partially filters a burst of glitches in the input signal from the output signal by controlling the charge of the switched capacitance based on the state of the input signal and the state of the output signal.

Abstract: A digital interface circuit includes a queue block configured to be coupled between an analog-to-digital converter (ADC) and a Direct Memory Access (DMA) controller of a processor, where the queue block comprises a command buffer and is configured to: receive a first command from the DMA controller; store the first command in the command buffer; modify the first command in accordance with first control bits of the first command to generate a modified first command; and send the modified first command to the ADC.

Abstract: A substrate has an active area including first and second doped regions separated by portions of the substrate. Gates are located over the active area, each gate formed extending over a portion of the substrate separating adjacent first and second doped regions. A length of the doped regions is greater than other devices within the substrate that have a same gate oxide thickness. A first metallization layer has first electrical connectors between each of the first doped regions and a gate immediately adjacent thereto, and second electrical connectors connected to each of the second doped regions. A second metallization layer has a first electrical connector connected to each first electrical connector of the first metallization layer, and a second electrical connector connected to each second electrical connector of the first metallization layer, with the second electrical connector of the second metallization layer not overlapping the gates.

Abstract: The present disclosure is directed to a system that is configured to eject fluid vertically away from a thermal microfluidic die for use with scented oils or other fluids. The die is coupled to a rigid planar support board that separates the die from a reservoir of the fluid. The support board includes an opening that is lined with an inert liner that protects an interior surface of the support board from the fluid. The support board includes contact to an external power supply and contacts to the die on a first surface. The die is coupled to this first surface such that the second surface remains free of electrical connections.

Abstract: A row decoder located on one side of a memory array selectively drives word lines in response to a row address. A word line fault detection circuit located on an opposite side of the first memory array operates to detect an open word line fault between the opposed sides of the memory array. The word line fault detection circuit includes a first clamp circuit that operates to clamp the word lines to ground. An encoder circuit encodes signals on the word lines to generate an encoded address. The encoded address is compared to the row address by a comparator circuit which sets an error flag indicating the open word line fault has been detected if the encoded address does not match the row address.

Abstract: An estimate of unit current element mismatch error in a digital to analog converter circuit is obtained through a correlation process. Unit current elements of the digital to analog converter circuit are actuated by bits of a thermometer coded signal generated in response to a quantization output signal. A correlation circuit generates the estimates of the unit current element mismatch error from a correlation of a first signal derived from the thermometer coded signal and a second signal derived from the quantization output signal.

Abstract: The charge transfer transistors of a positive or negative charge pump are biased at their gate terminals with a control voltage that provides for an higher level of gate-to-source voltage in order to reduce switch resistance in passing a boosted (positive or negative) voltage to a voltage output of the charge pump. This control voltage is generated using a bootstrapping circuit whose polarity of operation (i.e., negative or positive) is opposite to a polarity (i.e., positive or negative) of the charge pump.

Abstract: A voltage controlled oscillator (VCO) has a VCO core and a tuning bank. The tuning bank includes first and second tuning capacitors. A main switch is coupled between the first and second tuning capacitors. The tuning bank also includes control switches that receive a control signal to selectively activate the tuning bank. The main switch receives a level-shifted control signal to activate the tuning bank.