Abstract: An apparatus includes a primary processor and a secondary processor configured to receive a first signal, a second signal and a plurality of input signals, and perform same operations as each other based on the first signal, the second signal and the plurality of input signals, a comparison circuit configured to receive output signals of the primary processor and the secondary processor, and detect a lockstep mismatch between the primary processor and the secondary processor based on the output signals, a fault capturing circuit configured to receive the first signal and the second signal, and capture a fault signal generated by the comparison circuit, and a first glitch absorption device configured to receive the first signal and the second signal, and absorb glitches fed into the first glitch absorption device.

Abstract: An electric device includes: a first power domain; a second power domain; a third power domain, where during power-up, the third, the second, and the first power domains are configured to be powered up sequentially, where during standby-exit, the first, the second, and the third power domains are configured to be powered up sequentially; isolation paths that provide controlled signal transmission among the first, the second, and the third power domains, where each isolation path includes an isolation circuit between an input power domain and an output power domain of the isolation path; and a control circuit in the first power domain, where for each isolation path, the control circuit is configured to generate an isolation control signal for the isolation circuit, where the isolation circuit is configured enable or disable signal transmission along the isolation path.

Abstract: A circuit includes an amplifier having first and second inputs and an output, and a feedback circuit configured to generate a feedback voltage in response to a voltage at the output of the amplifier. The feedback circuit is coupled to the first input of the amplifier to provide the feedback voltage to the first input of the amplifier. An output circuit is configured to generate a variable bias current in response to the voltage at the output of the amplifier. A switch circuit is configured to switch the second input of the amplifier from receiving a first reference voltage during a first mode of operation to receiving a second reference voltage during a second mode of operation.

Abstract: A convolutional neural network includes a pooling unit. The pooling unit performs pooling operations between convolution layers of the convolutional neural network. The pooling unit includes hardware blocks that promote computational and area efficiency in the convolutional neural network.

Abstract: In an integrated circuit supporting complementary metal oxide semiconductor (CMOS) integrated circuits, latch-up immunity is supported by surrounding a hot n-well with an n-well strap spaced from the hot n-well by a specified distance in accordance with design rules. The n-well strap is positioned between the hot n-well and other n-well or n-type diffusion structures.

Abstract: Disclosed herein is a voltage gain amplifier for use in an automotive radar receiver chain. The voltage gain amplifier utilizes pole-zero cancelation to yield a desired transfer function without gain peaking at a bandwidth in which attenuation is desired, and utilizes a low pass filter effectively formed by a feedback loop including a high pass filter and a differential amplifier to ensure the desired level of attenuation at the desired bandwidth. In some instances, a chopper may be utilized in the feedback loop prior to the high pass filter, and after the differential amplifier, so as to reduce the bandwidth of the differential amplifier in the feedback loop.

Abstract: A communication system couples a plurality of processing cores together, each having an associated register storing a virtual machine ID, which is inserted into requests sent by the respective processing core. A master circuit has associated a master interface circuit, wherein the master interface circuit has associated register for storing a second virtual machine ID, which is inserted into requests sent by the master circuit. A slave circuit has associated a slave interface circuit configured to selectively forward read or write requests addressed to an address sub-range. The slave interface circuit has associated a third register storing a third virtual machine ID associated with the address sub-range and is configured to receive a request addressed to the address sub-range, extract from the request a virtual machine ID, determine whether the extracted virtual machine ID corresponds to the third virtual machine ID, and then either forwards or rejects the request.

Abstract: The present disclosure relates to an electronic circuit comprising a semiconductor substrate, radiofrequency switches corresponding to MOS transistors comprising doped semiconductor regions in the substrate, at least two metallization levels covering the substrate, each metallization level comprising a stack of insulating layers, conductive pillars topped by metallic tracks, at least two connection elements each connecting one of the doped semiconductor regions and formed by conductive pillars and conductive tracks of each metallization level. The electronic circuit further comprises, between the two connection elements, a trench crossing completely the stack of insulating layers of one metallization level and further crossing partially the stack of insulating layers of the metallization level the closest to the substrate, and a heat dissipation device adapted for dissipating heat out of the trench.

Abstract: The disclosure concerns an electronic device comprising, stacked from a first surface to a second surface, a first stack and a second stack of two high electron mobility transistors, referred to as first and second transistor, the first and the second stack each comprising, from an insulating layer, interposed between the first and the second stack, a barrier layer and a channel layer, the first and the second transistor respectively comprising a first and a second set of electrodes, the first and the second set of electrodes being each provided with a source electrode, with a drain electrode, and with a gate electrode which are arranged so that the first and the second transistor form a half-arm of a bridge.

Abstract: A voltage supply circuit and a method for controlling a voltage supply circuit are provided. The voltage supply circuit includes a positive charge pump stage that generates a positive voltage and a negative charge pump stage that generates a negative voltage. The voltage supply circuit also includes a control stage that compares a voltage representative of the negative voltage with a reference voltage and causes a slope of the positive voltage to decrease when the voltage representative of the negative voltage exceeds the reference voltage.

Abstract: A phase lock loop (PLL) includes an input comparison circuit configured to compare a reference signal to a divided feedback signal and generate at least one charge pump control signal based thereupon. A charge pump generates a charge pump output signal in response to the at least one charge pump control signal. A loop filter is coupled to receive and filter the charge pump output signal to produce an oscillator control signal. An oscillator generates an output signal in response to the oscillator control signal, with the output signal divided by a divisor using divider circuitry to produce the divided feedback signal. Divisor generation circuitry is configured to change the divisor over time so that a frequency of the divided feedback signal changes from a first frequency to a second frequency over time.

Abstract: An integrated circuit includes a continuous time delta sigma analog-to-digital converter (CTDS ADC) and a test circuit for testing the CTDS ADC. The test circuit converts multi-bit digital reference data to a single-bit digital stream. The test circuit then passes the single-bit digital stream to a finite impulse response digital-to-analog converter (FIR DAC). The FIR DAC converts the single-bit digital stream to an analog test signal. The analog test signal is then passed to the CTDS ADC. The CTDS ADC converts the analog test signal to digital test data. The test circuit analyzes the digital test data to determine the accuracy of the CTDS ADC.

Abstract: Disclosed herein is hardware for easing the process of changing the execution mode of a virtual machine and its associated resources. By adopting the hardware, it is possible to trigger a change in the execution mode in an automatic way, without software intervention, and without interfering with the execution of other virtual machines. In addition, in case an error has occurred for a virtual machine and it is detected, the hardware can be used to disable the resources associated with that virtual machine and generate notification of the completion this operation to other hardware, which will complete the reset of the virtual machine. By adopting the hardware, the execution mode change is simplified and offers configurability and flexibility for a system running multiple virtual machines.

Abstract: The disclosure concerns a device which comprises a stack of two high electron mobility transistors, referred to as first and second transistor, separated by an insulating layer and each provided with a stack of semiconductor layers respectively referred to as first stack and second stack, the first and the second stack each comprising, from the insulating layer to, respectively, a first and a second surface, a barrier layer and a channel layer, the first and the second transistor respectively comprising a first set of electrodes and a second set of electrodes, the first and the second set of electrodes each comprising a source electrode, a drain electrode, and a gate electrode which are arranged so that the first and the second transistor are electrically connected head-to-tail.

Abstract: A memory array arranged in multiple columns and rows. Computation circuits that each calculate a computation value from cell values in a corresponding column. A column multiplexer cycles through multiple data lines that each corresponds to a computation circuit. Cluster cycle management circuitry determines a number of multiplexer cycles based on a number of columns storing data of a compute cluster. A sensing circuit obtains the computation values from the computation circuits via the column multiplexer as the column multiplexer cycles through the data lines. The sensing circuit combines the obtained computation values over the determined number of multiplexer cycles. A first clock may initiate the multiplexer to cycle through its data lines for the determined number of multiplexer cycles, and a second clock may initiate each individual cycle. The multiplexer or additional circuitry may be utilized to modify the order in which data is written to the columns.

Abstract: An amplifier receives an input and a feedback. A first transistor controlled by the amplifier output is coupled between a supply node and the feedback. A second transistor controlled by the amplifier output is coupled to the supply node and generates a bias current. A trimmed resistor coupled between the feedback and ground includes, for trimming resolution of N-bits, where X+Y=N: M resistors, where M=2X?1, each having a resistance equal to R*(2Y)*i, i being an index having a value ranging from 1 to 2X?1, a first of the M resistors having a resistance of R*2Y, a last of the M resistors having a resistance of R*2Y*(2X?1); and M switches associated with the M resistors. Each of the M resistors is between a first node and its associated one of the M switches. Each of the M switches couples its associated one of the M resistors to a second node.

Abstract: A method is for operating an electronic device formed by a low dropout regulator (LDO) having an output coupled to a first conduction terminal of a transistor, with a second conduction terminal of the transistor being coupled to an output node. The electronic device is turned on by turning on the LDO, removing a DC bias from the second conduction terminal of the transistor by opening a first switch that selectively couples the second conduction terminal of the transistor to a supply node through a first diode coupled transistor and by opening a second switch that selectively couples the second conduction terminal of the transistor to a ground node through a second diode coupled transistor, and turning on the transistor. The electronic device is turned off by turning off the transistor, forming the DC bias at the second conduction terminal of the transistor, and turning off the LDO.

Abstract: An embodiment non-volatile memory device includes an array of memory cells in rows and columns; a plurality of local bitlines, the memory cells of each column being coupled to a corresponding local bitline; a plurality of main bitlines, each main bitline being coupleable to a corresponding subset of local bitlines; a plurality of program driver circuits, each having a corresponding output node and injecting a programming current in the corresponding output node, each output node coupleable to a corresponding subset of main bitlines. Each program driver circuit further includes a corresponding limiter circuit that is electrically coupled, for each main bitline of the corresponding subset, to a corresponding sense node whose voltage depends, during writing, on the voltage on the corresponding main bitline. Each limiter circuit turns off the corresponding programming current, in case the voltage on any of the corresponding sense nodes overcomes a reference voltage.

Abstract: The disclosure concerns an electronic device provided with two high electron mobility transistors stacked on each other and having in common their source, drain, and gate electrodes. For example, each of these electrodes extends perpendicularly to the two transistors. For example, the source and drain electrodes electrically contact the conduction channels of each of the transistors so that said channels are electrically connected in parallel.

Abstract: The disclosure concerns an electronic assembly which extends along a stacking direction from a lower surface to an upper surface coupled by an edge surface, the assembly comprises at least two elementary modules stacked along the stacking direction, which each comprise, along the stacking direction and from a back side to a front side, two high electron mobility transistors respectively called back transistor and front transistor, separated by an insulator layer, and having in common a source electrode, a drain electrode, and a gate electrode, the assembly of the front and back transistors being electrically connected in parallel, the electronic assembly comprises, arranged on the front side of each elementary module, a contact layer, electrically contacting the gate electrode of the considered elementary module from its front side, each of the contact layers comprising an electric contact point emerging onto the edge surface.