Abstract: A first multiplier multiplies a first input with a first coefficient and a first adder sums an output of the first multiplier and a second input to generate a first output. A second multiplier multiplies a third input with a second coefficient, a third multiplier multiplies a fourth input with a third coefficient, and a second adder sums outputs of the second and third multipliers to generate a second output. The second and third inputs are derived from the first output and the first and fourth inputs are derived from the second output. The first and second outputs generate digital values for first and second digital sinusoids, respectively.

Abstract: An integrated circuit includes an overvoltage protection circuit. The overvoltage protection circuit detects overvoltage events at a pad of the integrated circuit. The overvoltage protection circuit generates a max voltage signal that is the greater of the voltage at the pad and a supply voltage of the integrated circuit. The overvoltage protection circuit disables a PMOS transistor coupled to the pad by supplying the max voltage signal to the gate of the PMOS transistor when an overvoltage event is present at the pad.

Abstract: An integrated circuit includes a reconfigurable stream switch and an arithmetic circuit. The stream switch, in operation, streams data. The arithmetic circuit has a plurality of inputs coupled to the reconfigurable stream switch. In operation, the arithmetic circuit generates an output according to AX+BY+C, where A, B and C are vector or scalar constants, and X and Y are data streams streamed to the arithmetic circuit through the reconfigurable stream switch.

Abstract: An integrated circuit includes a pulse width modulator. The pulse width modulator includes a multiplexer that receives a plurality of data delay signals. Each of the data delay signals is based on a data signal and a respective clock phase signal. The multiplexer includes a first multiplexer stage and a second multiplexer stage. The first multiplexer stage receives all of the data delay signals and has a relatively large delay. The second multiplexer stage receives to output signals from the first multiplexer stage and has a relatively small delay. The second multiplexer stage outputs a pulse width modulation signal that can have a pulse width corresponding to the offset between two adjacent clock phase signals.

Abstract: A temperature sensing circuit includes a current generation circuit generating an initial current proportional to absolute temperature (Iptat), and a voltage generation circuit configured to mirror Iptat using an adjustable current source to produce a scaled current and to source the scaled current to a first terminal of a resistor to produce a reference voltage at the first terminal. A second terminal of the resistor has a voltage complementary to absolute temperature (Vctat) applied thereto. An analog-to-digital converter (ADC) has a reference input receiving the reference voltage, and a data input receiving Vctat or an externally sourced voltage. The ADC generates an output code indicative of a ratio between: a) either Vctat or the externally sourced voltage, and b) the reference voltage. A digital circuit determines a temperature readout from the output code and calibrates the reference voltage and the temperature readout determination based upon the output code.

Abstract: A memory circuit includes an array of memory cells arranged with first word lines connected to a first sub-array storing less significant bits of data and second word lines connected to a second sub-array storing more significant bits of data. A first word line signal is applied to a selected one of the first word lines to read less significant bits from the first sub-array, and a mathematical operation is performed on the read less significant bits to produce modified less significant bits that are written back to the first sub-array. If the read less significant bits are saturated, a second word line signal is applied to a selected one of the second word lines to read more significant bits from the second sub-array, and a mathematical operation is performed on the read more significant bits to produce modified more significant bits that are written back to the second sub-array.

Abstract: Described herein are integrated circuit chips having test circuitry designed such that independently selectable testing of different power domains using a same scan chain compressor-decompressor circuit may be performed. Also disclosed herein are integrated circuit chips having test circuitry designed such that independently selectable testing of different power domains using multiple different scan chain compressor-decompressor circuits may be performed.

Abstract: An integrated circuit includes a data propagation path including a flip-flop. The flip-flop includes a first latch and a second latch. The integrated circuit includes a third latch that acts as a dummy latch. The input of the third latch is coupled to the output of the first latch. The integrated circuit includes a fault detector coupled to the output of the flip-flop and the output of the third latch. The third latch includes a signal propagation delay selected so that the third latch will fail to capture data in a given clock cycle before the second latch of the flip-flop fails to capture the data in the given clock cycle. The fault detector that detects when the third latch is failed to capture the data.

Abstract: Disclosed herein is a method of operating a system in a test mode. When the test mode is an ATPG test mode, the method includes beginning stuck-at testing by setting a scan control signal to a logic one, setting a transition mode signal to a logic 0, and initializing FIFO buffer for ATPG test mode. The FIFO buffer is initialized for ATPG test mode by setting a scan reset signal to a logic 0 to place a write data register and a read data register associated with the FIFO buffer into a reset state, enabling latches of the FIFO buffer using an external enable signal, removing the external enable signal to cause the latches to latch, and setting the scan reset signal to a logic 1 to release the write data register and the read data register from the reset state, while not clocking the write data register.

Abstract: The present disclosure is directed to arranging user data memory cells and test memory cells in a configurable memory array that can perform both differential and single ended read operations during memory start-up and normal memory use, respectively. Different arrangements of the user data memory cells and the test memory cells in the memory array result in increased effectiveness of memory array, in terms of area optimization, memory read accuracy and encryption for data security.

Abstract: A method includes receiving, at a master agent, announcements from candidate consumer agents indicating the presence of the candidate consumer agents. Each announcement includes display parameters for a display of the corresponding candidate consumer agent. The method further includes receiving at the master agent content parameters from a producer agent, the content parameters defining characteristics of content to be provided by the consumer agent. A mosaic screen is configured based on the received announcements and the content parameters. This configuring of the mosaic screen includes selecting ones of the consumer agents for which an announcement was received and generating content distribution parameters based on the content parameters and the display parameters of the selected ones of the consumer agents. The generated content distribution parameters are provided to the consumer agent.

Abstract: A driving circuit including a reference voltage generator to generate a reference voltage based on an operating frequency of a complementary circuit; a comparator including a first input configured to receive a drain-to-source voltage of a field effect transistor; and a second input to receive the reference voltage; and a signal generator to deliver a driving signal to a gate terminal of the field effect transistor to drive the field effect transistor to an ON state after the drain-to-source voltage of the first low side field effect transistor becomes less than the reference voltage and to an OFF state after the drain-to-source voltage of the field effect transistor becomes greater than the reference voltage.

Abstract: A time-interleaved analog to digital converter (TI-ADC) includes a first sub-ADC configured to sample and convert an input analog signal to generate a first digital signal and a second sub-ADC configured to sample and convert said input analog signal to generate a second digital signal. Sampling by the second sub-ADC occurs with a time skew mismatch. A multiplexor interleaves the first and second digital signals to generate a third digital signal. A time skew mismatch error determination circuit processes the first and second digital signals to generate a time error corresponding to the time skew mismatch. A slope value of said third digital signal is determined and multiplied by the time error to generate a signal error. The signal error is summed with the third digital signal to generate a digital output signal which eliminates the error due to the time skew mismatch. This correction is performed in real time.

Abstract: A memory array includes a plurality of bit-cells arranged as a set of rows of bit-cells intersecting a plurality of columns. The memory array also includes a plurality of in-memory-compute (IMC) cells arranged as a set of rows of IMC cells intersecting the plurality of columns of the memory array. Each of the IMC cells of the memory array includes a first bit-cell having a latch, a write-bit line and a complementary write-bit line, and a second bit-cell having a latch, a write-bit line and a complementary write-bit line, wherein the write-bit line of the first bit-cell is coupled to the complementary write-bit line of the second bit-cell and the complementary write-bit line of the first bit-cell is coupled to the write-bit line of the second bit-cell.

Abstract: A continuous time, sigma-delta analog-to-digital converter circuit includes a sigma-delta modulator circuit configured to receive an analog input signal. A single bit quantizer of the modulator generates a digital output signal at a sampling frequency. A data storage circuit stores bits of the digital output signal and digital-to-analog converter (DAC) elements are actuated in response to the stored bits to generate an analog feedback signal for comparison to the analog input signal. A filter circuit includes polyphase signal processing paths and a summation circuit configured to sum outputs from the polyphase signal processing paths to generate a converted output signal. A fan out circuit selectively applies the stored bits from the data storage circuit to inputs of the polyphase signal processing paths of the filter circuit.

Abstract: A system and method for operating a memory cell is provided. A non-volatile memory storage device includes an array of memory cells of differential or single-ended type. In an embodiment, a regulator is coupled to a sense amplifier. The regulator is configured to generate a voltage to gate terminals of one or two transistors of the sense amplifier. In the differential type, the voltage is generated such that the first bias current and the second bias current have a current value equal to the sum of a maximum current flowing in a memory cell being in a RESET state and a fixed current. In the single-ended type, the regulated voltage is generated such that the first bias current and the second bias current have a current value equal to the sum of a fixed current and the reference current generated by the reference current source across temperature.

Abstract: A read signal generator generates read signals to control read operations of a memory array. The read signal generator can be selectively controlled to generate an oscillating signal having a period that corresponds to a feature one of the read signals. The oscillating signal is passed to a frequency divider that divides the oscillating signal and provides the divided oscillating signal to an output pad. The frequency of the oscillating signal can be measured at the output pad. The frequency of the oscillating signal, and the duration of the read signal feature can be calculated from the frequency of the oscillating signal. The read signal feature can then be adjusted if needed.

Abstract: The present disclosure is directed to a circuit layout of a dual port static random-access-memory (SRAM) cell. The memory cell includes active regions in a substrate, with polysilicon gate electrodes on the active regions to define transistors of the memory cell. The eight transistor (8T) memory cell layout includes a reduced aspect ratio and non-polysilicon bit line discharge path routing by positioning an active region for the first port opposite an active region for the second port and consolidating power line nodes at a central portion of the memory cell.

Abstract: A low power crystal oscillator circuit having a high power part and a low power part. Oscillation is initialized using the high power part. Once the crystal is under stable oscillation, the circuit switches to the low power part and continue operation for a long duration.

Abstract: An integrated circuit includes an input pad and a Schmitt trigger coupled to the input pad. The Schmitt trigger includes a first inverter and a second inverter. The Schmitt trigger includes a pull-up transistor coupled to an input of the second inverter and configure to supply a high reference voltage to the input of the second inverter.