Abstract: A vertical conduction MOSFET device includes a body of silicon carbide having a first conductivity type and a face. A metallization region extends on the face of the body. A body region of a second conductivity type extends in the body, from the face of the body, along a first direction parallel to the face and along a second direction transverse to the face. A source region of the first conductivity type extends towards the inside of the body region, from the face of the body. The source region has a first portion and a second portion. The first portion has a first doping level and extends in direct electrical contact with the metallization region. The second portion has a second doping level and extends in direct electrical contact with the first portion of the source region. The second doping level is lower than the first doping level.

Abstract: In an embodiment a processing system includes a reset circuit configured to receive a reset-request signal and one or more further reset-request signals, wherein the one or more further reset-request signals are provided by a processing core, one or more further circuits and/or a terminal of the processing system and to generate a combined reset-request signal by combining the reset-request signal and the one or more further reset-request signals, and a hardware test circuit including for each of the one or more further reset-request signals, a respective first combinational circuit configured to selectively assert the respective further reset-request signal, a second combinational logic circuit configured to selectively mask the combined reset-request signal, and a control circuit configured to repeat operations during a diagnostic phase.

Abstract: A pixel includes a first electrode layer on an exposed surface of an interconnection structure and in contact with a conductive element of the interconnection structure. An insulating layer extends over the first electrode layer and includes opening crossing through the insulating layer to the first electrode layer. A second electrode layer is on top of and in contact with the first electrode layer and the insulating layer in the opening. A film configured to convert photons into electron-hole pairs is on the insulating layer, the second electrode layer and filling the opening. A third electrode layer covers the film.

Abstract: In accordance with an embodiment, a system includes: a primary device configured to be connected to at least one secondary device via serial bus having a data wire and a clock wire. The primary device is configured to: provide a clock signal on the clock wire; and transmit a frame comprising control bits on the serial bus, wherein a number of control bits transmitted on the serial bus at at least one location of the frame indicates a format of the frame.

Abstract: A method of operating a touch screen panel includes initiating a communication between the panel and an active pen and determining a touch zone of the panel. The touch zone includes communication channels that are operating by touch while bi-directional communication is occurring between the panel and active pen. Communications channels within the touch zone are disabled and communication between the panel and the active pen can occur while the communications channels within the touch zone are disabled. When it is determined that the communication between the panel and the active pen has stopped, communications channels continue to be disabled within the touch zone for a set time delay while no communication occurs between the panel and the active pen. After the set delay time, the communication channels within the touch zone are enabled.

Abstract: The method for processing a matrix of pixels each containing an original red, green, blue, or infrared component, comprises at least one interpolation of an interpolated component different from the original component of a pixel of interest from the components of a group of pixels neighboring the pixel of interest. The interpolation comprises: a calculation of the sum of the components of reference pixels weighted by a respectively assigned weight, the reference pixels being pixels of the group having the same original component as the interpolated component, an evaluation of the spatial uniformity of an environment, within the group of each reference pixel, a calculation of the weights assigned to the reference pixels at values which are normalized and proportional to the respective spatial uniformity.

Abstract: In accordance with an embodiment, a method of operating a piezoelectric transducer configured to transduce mechanical vibrations into transduced electrical signals at a pair of sensor electrodes includes stimulating a resonant oscillation of the piezoelectric transducer by applying at least one pulse electrical stimulation signal to the pair of sensor electrodes; detecting, at the pair of sensor electrodes, at least one electrical signal resulting from the stimulated resonant oscillation, wherein the at least one electrical signal resulting from the stimulated resonant oscillation oscillates at a resonance frequency of the piezoelectric transducer; measuring a frequency of oscillation of the at least one electrical signal resulting from the stimulated resonant oscillation to obtain a measured resonance frequency of the piezoelectric transducer; and tuning a stopband frequency of a notch filter coupled to the piezoelectric transducer to match the measured resonance frequency of the piezoelectric transducer.

Abstract: A pixel includes a first doped region of a first conductivity type and a second doped region of a second conductivity type. The first doped region includes first and second layers forming a heterojunction. A dopant concentration of the first layer is greater than a dopant concentration of the second layer. The first layer is made of a semiconductor material and the second layer includes quantum dots. The second doped region is in contact with the second layer, with the first layer being laterally surrounded by an insulated conductive wall that is biased to a negative voltage.

Abstract: A device includes trenches. The trenches each include a conductive element configured to electrically couple coupling fingers of transistor gates located on a first side of a first layer, to a second layer extending on the side of a second face of the first layer.

Abstract: A process for manufacturing a microelectromechanical device includes: on a body containing semiconductor material, forming a sacrificial layer of dielectric material having a first surface, opposite to the body; conferring a sacrificial surface roughness to the first surface of the sacrificial layer; on the first surface of the sacrificial layer, forming a structural layer of semiconductor material having a second surface in contact with the first surface of the sacrificial layer. Conferring sacrificial surface roughness to the first surface of the sacrificial layer includes: on the sacrificial layer, forming a transfer layer of semiconductor material with intrinsic porosity; and partially removing the sacrificial layer through the transfer layer.

Abstract: A time-based DC-DC converter is controlled in response to a first oscillator signal based on a first control signal, a second oscillator signal based on a second control signal and a controlled current based on a feedback control signal. The first control signal and the second control signal are a function of the controlled current. The feedback control signal is generated as a function of the first and second oscillator signals by: generating at least two binary signals including a first binary signal based on a difference between the first oscillator signal and the reference signal and a second binary signal based on a difference between the second oscillator signal and the reference signal; and generating via a charge pump the feedback control signal based on the first binary signal and the second binary signal.

Abstract: A control circuit provides a drive signal to an electronic switch of an electronic converter. A first driving circuit has a first enable node receiving a first enable signal and a PWM signal generator circuit configured to provide a PWM drive signal in response to the first enable signal. A second driving circuit has a second enable node configured to receive a second enable signal and a PFM signal generator circuit configured to provide a PFM drive signal in response to the second enable signal. Logic circuitry coupled to the first and second driving circuits is configured to assert at least one of the first and second enable signals in response to a mode selection signal.

Abstract: Disclosed herein is a system for measuring current, including an input inductor and a self-test inductor through which respective input and self-test currents flow. A Hall-effect sensor circuit senses magnetic fields around these inductors, producing differential voltage outputs. These outputs are received by an input and self-test extraction circuit, which alternatingly outputs differential voltages representative of the magnetic fields around the inductors. Amplification of these differential voltages is performed by an amplifier. Sampling of the amplified differential voltages is performed by two sample/hold circuits, each designated for a specific inductor's magnetic field. An integrator circuit adjusts a voltage for the Hall effect sensor circuit, causing the gain applied to the sampled differential voltage to remain consistent and uninfluenced by the sensitivity of the Hall effect sensor circuit.

Abstract: Provided is a circuit for managing a first clock signal clocking a timer adapted to being controlled by a processor clocked by a second clock signal. When the processor is off, the first clock signal is equal to a third clock signal having a frequency lower than the frequency of the second clock signal. When the processor is on, the first clock signal is equal to a fourth signal having a rising edge at each rising edge of the second clock signal directly following a rising edge of the third clock signal.

Abstract: Cantilever probes are produced for use in a test apparatus of integrated electronic circuits. The probes are configured to contact corresponding terminals of the electronic circuits to be tested during a test operation. The probe bodies are formed of electrically conductive materials. On a lower portion of each probe body that, in use, is directed to the respective terminal to be contacted, an electrically conductive contact region is formed having a first hardness value equal to or greater than 300 HV; each contact region and the respective probe body form the corresponding probe.

Abstract: An audio device includes a gain step selection circuit that receives a different requested gain value and an associated requested step size from each of a plurality of sources, compares each requested gain value to a same feedback gain value and generates a polarity based thereupon, performs step polarization on each requested step size as a function of the generated polarity therefor to thereby generate a plurality of step values, and outputs a least of the plurality of step values as an output step value. An accumulator circuit generates a current input gain value based upon the output step value and the feedback gain value, and then updates the feedback gain value to be equal to the current input gain value. A normalizing circuit multiplies an input data value by the current input gain value and applies a truncation function to a result thereof to produce an output data value.

Abstract: Described herein is a lock system (e.g., for a vehicle door) including an NFC circuit in communication with a microcontroller that monitors the voltage of a battery (e.g., the vehicle battery). The microcontroller switches the NFC circuit to card emulation (CE) mode with energy harvesting capability when the battery voltage falls below a threshold so that the NFC circuit can harvest energy from a nearby Qi wireless charging field and store that harvested energy in an energy storage device. When the energy storage device is sufficiently charged, it is used power the microcontroller and an electronically actuated mechanical lock (e.g., vehicle door lock), then the microcontroller cooperates with the NFC circuit to switch the NFC circuit to NFC reader mode and attempt to verify a nearby NFC device. If the NFC device is verified, the microcontroller operates the lock, otherwise, it maintains the lock in an inactive state.

Abstract: A memory cell including a set of active regions that overlay a set of gate regions to form a pair of cross-coupled inverters. A first active region extends along a first axis. A first gate region extends transversely to the first active region and overlays the first active region to form a first transistor of the pair of cross-coupled inverters. A second gate region extends transversely to the first active region and overlays the first active region to form a second transistor of the pair of cross-coupled inverters. A second active region extends along a second axis and overlays the first gate region to form a third transistor of the pair of cross-coupled inverters. A fourth active region extending along a third axis and overlays a gate region to form a transistor of a read port.

Abstract: An encapsulation hood is fastened onto electrically conductive zones of a support substrate using springs. Each spring has a region in contact with an electrically conductive path contained in the encapsulation hood and another region in contact with a corresponding one of the electrically conductive zones. The fastening of the part of the encapsulation hood onto the support substrate compresses the springs and further utilizes a bead of insulating glue located between the compressed springs.

Abstract: A clock generator circuit includes an oscillator circuit coupled to a bias circuit. The bias circuit includes a current mirror, third and fourth transistors, and a cascode transistor. The current mirror includes a reference transistor and a set of copy transistors that are programmable. The third transistor has a source connected to a cold spot, a drain and a gate connected to this drain. The fourth transistor has a source connected to the drain of the third transistor, a drain, and a gate connected to that drain. The cascode transistor has a source connected to a drain of at least one of the copy transistors, a drain, and a gate connected to the gate of the fourth transistor. The gates of the fourth transistor and the cascode transistor are thicker than the gates of the reference transistor, each copy transistor, and the third transistor.