Abstract: A capacitive element of an integrated circuit includes first and second electrodes. The first electrode is formed by a first electrically conductive layer located above a semiconductor well doped with a first conductivity type. The second electrode is formed by a second electrically conductive layer located above the first electrically conductive layer of the semiconductor well. The second electrode is further formed by a doped surface region within the semiconductor well that is heavily doped with a second conductivity type opposite the first conductivity type, wherein the doped surface region is located under the first electrically conductive layer. An inter-electrode dielectric area electrically separates the first electrode and the second electrode.

Abstract: A first object and a second object are movable in relation to one another. The first object includes a transponder using an integrated circuit having two terminals which may or may not be shorted. The presence or absence of a short circuit between the two terminals is detected. This is accomplished at least partly by the second object depending on the relative positioning of the first and second objects. The transponder transmits, to a module having a contactless reader function, positioning information corresponding to said relative positioning using a contactless communication protocol.

Abstract: A USB Type-C receiver device, includes: a port including a channel configuration input; a ground pin; and a protection circuit for protection against high voltages on the channel configuration input, wherein the protection circuit includes a resistive circuit coupled between the channel configuration input and the ground terminal and configured to form both a voltage divider and a resistive pull-down circuit coupled between the channel configuration input and the ground pin.

Abstract: An ultralong time constant time measurement device includes elementary capacitive elements that are connected in series. Each elementary capacitive element is formed by a stack of a first conductive region, a dielectric layer having a thickness suited for allowing charge to flow by direct tunnelling effect, and a second conductive region. The first conductive region is housed in a trench extending from a front face of a semiconductor substrate down into the semiconductor substrate. The dielectric layer rests on the first face of the semiconductor substrate and in particular on a portion of the first conductive region in the trench. The second conductive region rests on the dielectric layer.

Abstract: An electronic chip includes a first well having a first PN junction located therein, a second buried well located under and separated from the first well, and a first region forming a second PN junction with the second well. A detection circuit is coupled to the first well and configured to output a digital signal that has a first logic value when a potential difference within the first region is above a threshold and a second logic value when the potential difference within the first region is below the threshold.

Abstract: A near field communication (NFC) method includes activating an NFC device second device in response to a first electromagnetic field generated by a nearby NFC device. The NFC device generates a second electromagnetic field after being activated. The first NFC device can detect the second electromagnetic field and initiate a near field communication process.

Abstract: First and second wells are formed in a semiconductor substrate. First and second trenches in the first second wells, respectively, each extend vertically and include a central conductor insulated by a first insulating layer. A second insulating layer is formed on a top surface of the semiconductor substrate. The second insulating layer is selectively thinned over the second trench. A polysilicon layer is deposited on the second insulating layer and then lithographically patterned to form: a first polysilicon portion over the first well that is electrically connected to the central conductor of the first trench to form a first capacitor plate, a second capacitor plate formed by the first well; and a second polysilicon portion over the second well forming a floating gate electrode of a floating gate transistor of a memory cell having an access transistor whose control gate is formed by the central conductor of the second trench.

Abstract: An amplification circuit includes a first group of amplifiers including N first amplifiers, a second group of amplifiers including K second amplifiers, a first terminal, a second terminal, and a third terminal. Each of the N first amplifiers and each of the K second amplifiers includes an output. The second group of amplifiers is divided into a first subassembly of amplifiers and a second subassembly of amplifiers. The first subassembly includes M second amplifiers of the second group. The second subassembly includes K-M remaining second amplifiers of the second group. The first terminal is coupled to each output of the N first amplifiers and to a first radio frequency output terminal. The second terminal is coupled to each output of the M second amplifiers. The third terminal is coupled to each output of the K-M second remaining amplifiers and to a second radio frequency output terminal.

Abstract: A method to transmit data over a single-wire bus wherein a first communication channel is defined by pulses of different durations according to the state of the transmitted bit and depending on a reference duration, and a second communication channel is defined by the reference duration.

Abstract: A non-volatile memory is organized in pages and has a word writing granularity of one or more bytes and a block erasing granularity of one or more pages. Logical addresses are scrambling into physical addresses used to perform operations in the non-volatile memory. The scrambling includes scrambling logical data addresses based on a page structure of the non-volatile memory and scrambling logical code addresses based on a word structure of the non-volatile memory.

Abstract: A system on chip includes an interconnect circuit including at least p input interfaces and at least k output interfaces, p source devices respectively coupled to the p input interfaces and k access ports respectively coupled to the k output interfaces and belonging to a target that includes one or more target devices. Each source device is configured to deliver transactions to the target via one of the access ports. An associated memory of each access port is configured to temporarily store the transactions received by the access port. The target is configured to deliver, for each access port, a fill signal representative of a current fill level of its associated memory. A control circuit is configured to receive the fill signals from the access ports and select the access ports eligible to receive a transaction depending on the current fill levels.

Abstract: A MOS transistor with two vertical gates is formed within a substrate zone of a semiconductor substrate doped with a first type of conductivity and separated from a remaining portion of the substrate by two first parallel trenches extending in a first direction. An isolated gate region rests on each flank of the substrate zone and on a portion of the bottom of the corresponding trench to form the two vertical gates. At least one gate connection region electrically connects the two vertical gates. A first buried region located under the substrate zone is doped with a second type of conductivity to form a first conduction electrode of the MOS transistor. A second region doped with the second type of conductivity is located at the surface of the substrate zone to form a second conduction electrode of the MOS transistor.

Abstract: A circuit for protecting an integrated circuit against fault injection attacks includes an element including a dielectric which is destroyed, resulting in the occurrence of a short-circuit. The element is connected between two terminals that receive a power supply voltage of the integrated circuit.

Abstract: A device includes a current source, a first transistor connected between a first supply rail and an output terminal, and a second transistor connected between the output terminal and a first terminal of the current source, wherein a second terminal of the current source is connected to a second supply rail. A variable-gain amplifier circuit responds to a potential at the first terminal of the current source by applying a potential to the control terminal of the first transistor. A gain of the amplifier circuit is determined by a potential at the output terminal.

Abstract: A device includes a first transistor connected between a first node and an output terminal and a first current source connected between the first node and a supply rail. A circuit includes a second current source connected between the supply rail and a second node, an operational amplifier having a non-inverting input configured to receive a potential set point, and a second transistor connected between the second node and an inverting input of the operational amplifier. An output of the operational amplifier is connected to a control terminal of the second transistor and further connected to a control terminal of the first transistor.

Abstract: An integrated circuit includes a memory cell incorporating an antifuse device. The antifuse device includes a state transistor having a control gate and a second gate that is configured to be floating. A dielectric layer between the control gate and the second gate is selectively blown in order to confer a broken-down state on the antifuse device where the second gate is electrically coupled to the control gate for storing a first logic state. Otherwise, the antifuse device is in a non-broken-down state for storing a second logic state.

Abstract: A semiconductor wafer includes first zones containing integrated circuits, each first zone including a substrate and a sealing ring at a periphery of the substrate. The first zones are separated from each other by second zones defining cutting lines or paths. The integrated circuit includes an electrically conductive fuse that extends between a first location inside the integrated circuit and a second location situated outside the integrated circuit beyond one of the cutting lines. This electrically conductive fuse includes a portion that passes through the sealing ring and another portion that straddles the adjacent cutting line. The portion of the fuse that passes through is electrically isolated from the sealing ring and from the substrate. The straddling portion is configured to be sliced, when cutting the wafer along the cutting line, so as to cause the fuse to change from an electrical on state to an electrical off state.

Abstract: A non-volatile memory device includes a vertical state transistor disposed in a semiconductor substrate, where the vertical state transistor is configured to trap charges in a dielectric interface between a semiconductor well and a control gate. A vertical selection transistor is disposed in the semiconductor substrate. The vertical selection transistor is disposed under the state transistor, and configured to select the state transistor.

Abstract: Trenches of different depths in an integrated circuit are formed by a process utilizes a dry etch. A first stop layer is formed over first and second zones of the substrate. A second stop layer is formed over the first stop layer in only the second zone. A patterned mask defines the locations where the trenches are to be formed. The dry etch uses the mask to etch in the first zone, in a given time, through the first stop layer and then into the substrate down to a first depth to form a first trench. This etch also, at the same time, etch in the second zone through the second stop layer, and further through the first stop layer, and then into the substrate down to a second depth to form a second trench. The second depth is shallower than the first depth.

Abstract: In an embodiment, a method for protecting an electronic circuit includes: detecting a malfunction of the electronic circuit; executing a plurality of waves of countermeasures without interrupting an operation of the electronic circuit; and triggering a reset of the electronic circuit after executing the plurality of waves of countermeasures. An interval between two waves of countermeasures of the plurality of waves of countermeasures is variable.