Patents Assigned to STMICROELECTRONICS (ROUSSET)
  • Patent number: 10063239
    Abstract: An integrated circuit protection device, including: groups of radiation detection elements distributed in a matrix array; logic gates combining outputs of the detection elements in rows and in columns, each output of a detection element being connected to a gate combining a row and to a gate combining a column; and a circuit for interpreting signals supplied by said logic gates and including an event counter and a delay element.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: August 28, 2018
    Assignee: STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Alexandre Sarafianos, Bruno Nicolas
  • Patent number: 10054973
    Abstract: A method for smoothing current consumed by an electronic device is based on a series of current copying operations and on a current source delivering a reference current. The reference current is delivered in such a manner that current consumed as seen from the power supply depends on the reference current.
    Type: Grant
    Filed: March 23, 2017
    Date of Patent: August 21, 2018
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Nicolas Demange, Jimmy Fort, Thierry Soude
  • Patent number: 10049741
    Abstract: A memory cell includes a source region and a drain region disposed in a semiconductor body. A channel region is disposed in the semiconductor body between the source region and the drain region. A floating gate is disposed between the semiconductor body and the control gate. The floating gate includes a protruding portion that is located over the channel region between the source and drain regions and spaced therefrom. The protruding portion is separated from the channel region by a first insulating layer that is thinner than a second insulating layer that separates remaining portions of the floating gate from the channel region.
    Type: Grant
    Filed: February 19, 2017
    Date of Patent: August 14, 2018
    Assignee: STMICROELECTRONICS (ROUSSET) SAS
    Inventor: François Tailliet
  • Patent number: 10049991
    Abstract: An integrated circuit includes an interconnection part with a via level situated between a lower metallization level and an upper metallization level. The lower metallization level is covered by an insulating encapsulation layer. An electrical discontinuity between a first via of the via level and a first metal track of the lower metallization level is provided at the level of the insulating encapsulation layer. The electrical discontinuity is formed prior to formation of any via of the via level and prior to any metal track of the upper metallization level. The electrical discontinuity may comprise: a portion of an additional insulating layer extending over the insulating encapsulation layer; a portion of the insulating encapsulation layer; or an insulating oxide on a top surface of the first metal track.
    Type: Grant
    Filed: May 16, 2017
    Date of Patent: August 14, 2018
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Christian Rivero, Pascal Fornara, Guilhem Bouton, Mathieu Lisart
  • Patent number: 10050672
    Abstract: A method is for processing an analog signal coming from a transmission channel. The analog signal may include a useful signal modulated on a sub-set of carriers. The method may include analog-to-digital converting of the analog signal into a digital signal, and synchronization processing the digital signal. The synchronizing may include determining, in a time domain, a limited number of coefficients of a predictive filter from an autoregressive model of the digital signal, and filtering the digital signal in the time domain by a digital finite impulse response filter with coefficients based upon the limited number of coefficients to provide a filtered digital signal. The method may include detecting of an indication allowing a location in the frame structure to be identified, using the filtered digital signal and a reference signal.
    Type: Grant
    Filed: June 21, 2017
    Date of Patent: August 14, 2018
    Assignee: STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Mark Wallis, Yoann Bouvet, Pierre Demaj
  • Patent number: 10049982
    Abstract: An integrated circuit includes an interconnection part with a via level situated between a lower metallization level and an upper metallization level. The lower metallization level is covered by an insulating encapsulation layer and an inter-metallization level insulating layer. An electrical discontinuity is provided between a via of the via level and a metal track of the lower metallization level. The electrical discontinuity is formed by an additional insulating layer having a material composition identical to that of the inter-metallization level insulating layer. The electrical discontinuity is situated between a bottom of the via and a top of the metal track, with the discontinuity being bordered by the insulating encapsulation layer.
    Type: Grant
    Filed: May 16, 2017
    Date of Patent: August 14, 2018
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Christian Rivero, Pascal Fornara, Guilhem Bouton, Mathieu Lisart
  • Patent number: 10049753
    Abstract: A memory sense amplifier is configurable on command between a current-sensing mode and a voltage-sensing mode. The sense amplifier is intended, in its current-sensing configuration, to read a datum stored in a memory cell connected to the amplifier, and is intended, in its voltage-sensing configuration, to read a datum stored in a bit-line latch connected to the amplifier.
    Type: Grant
    Filed: July 24, 2017
    Date of Patent: August 14, 2018
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: François Tailliet, Victorien Brecte
  • Patent number: 10043741
    Abstract: A method of manufacturing electronic chips containing low-dispersion components, including the steps of: mapping the average dispersion of said components according to their position in test semiconductor wafers; associating, with each component of each chip, auxiliary correction elements; activating by masking the connection of the correction elements to each component according to the initial mapping.
    Type: Grant
    Filed: December 15, 2016
    Date of Patent: August 7, 2018
    Assignee: STMICROELECTRONICS (ROUSSET) SAS
    Inventors: François Tailliet, Guilhem Bouton
  • Patent number: 10038372
    Abstract: A charge pump circuit can be controlled by a control signal that is generated from a first signal coming from and output signal of the charge pump circuit, from a reference signal, and from a clock signal. The generation of the control signal includes a comparison of the reference signal and of the first signal in tempo with a timing signal coming from the clock signal.
    Type: Grant
    Filed: November 29, 2016
    Date of Patent: July 31, 2018
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Francesco La Rosa, Paola Cavaleri
  • Publication number: 20180211915
    Abstract: A connecting bar electrically connects separate circuit zones of an integrated circuit. The connecting bar is formed by a main portion that is a conductive strip extending above separate circuit zones to be interconnected. The conductive strip is separated from the integrated circuit by a dielectric except at the circuit zones to be interconnected. The connecting bar further includes secondary portions that are conductive pads passing through the dielectric in a vertical direction from the circuit zone to the conductive strip.
    Type: Application
    Filed: September 11, 2017
    Publication date: July 26, 2018
    Applicants: STMicroelectronics (Rousset) SAS, STMicroelectronics (Crolles 2) SAS
    Inventors: Philippe Boivin, Delia Ristoiu
  • Patent number: 10025559
    Abstract: A method of protecting a modular exponentiation calculation on a first number and an exponent, modulo a first modulo, executed by an electronic circuit using a first register or memory location and a second register or memory location, successively including, for each bit of the exponent: generating a random number; performing a modular multiplication of the content of the first register or memory location by that of the second register or memory location, and placing the result in one of the first and second registers or memory locations selected according to the state of the bit of the exponent; performing a modular squaring of the content of one of the first and second registers or memory locations selected according to the state of the exponent, and placing the result in this selected register or memory location, the multiplication and squaring operations being performed modulo the product of the first modulo by said random number.
    Type: Grant
    Filed: February 24, 2017
    Date of Patent: July 17, 2018
    Assignee: STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Ibrahima Diop, Yanis Linge, Pierre-Yvan Liardet
  • Patent number: 10026563
    Abstract: An integrated circuit, comprising an electrical-switching mechanical device in a housing having at least one first thermally deformable assembly including a beam held in at least two different locations by at least two arms secured to edges of the housing, the beam and the arms being metallic and situated within the same first metallization level and an electrically conductive body, wherein the said first thermally deformable assembly has at least one first configuration at a first temperature and a second configuration when at least one is at a second temperature different from the first temperature, wherein the beam is at a distance from the body in the first configuration and in contact with the said body and immobilized by the said body in the second configuration and establishing or prohibiting an electrical link passing through the body and through the beam.
    Type: Grant
    Filed: May 29, 2014
    Date of Patent: July 17, 2018
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: Antonio Di-Giacomo, Christian Rivero, Pascal Fornara
  • Patent number: 10020580
    Abstract: A radio or power transfer antenna, in the form of a planar conductive winding, with one of two ends of the planar conductive winding directly connected to a metal section or plane which continuously surrounds the planar conductive winding.
    Type: Grant
    Filed: August 25, 2015
    Date of Patent: July 10, 2018
    Assignee: STMicroelectronics (Rousset) SAS
    Inventor: Pierre Rizzo
  • Patent number: 10013208
    Abstract: According to one mode of implementation it is proposed to automatically accelerate the write operation by deleting on the basis of the values of the data to be written and optionally on the basis of the values of the data present in the memory the erasure step or the programming step, so doing while optionally using a conventional write command. When the memory is equipped with an error-correcting code based on a Hamming code, a property of the latter makes it possible readily to implement this possible acceleration of the cycles of writings within the memory. This property is that according to which when all the bits of the bytes of a digital word grouping together n bytes are equal to zero, the check bits associated with these bytes are also all equal to zero.
    Type: Grant
    Filed: February 27, 2016
    Date of Patent: July 3, 2018
    Assignee: STMicroelectronics (Rousset) SAS
    Inventors: François Tailliet, Marc Battista
  • Publication number: 20180181968
    Abstract: In order to verify the authenticity of a product associated with a host device, the product contains, in segments of a non-volatile memory, several different functions stored in ciphered fashion. The host device sends a control signal for selecting and activating one of those ciphered functions. The product then deciphers and executes the function. The result of the function execution is then communicated back to host device when a decision on product authenticity is made.
    Type: Application
    Filed: February 21, 2018
    Publication date: June 28, 2018
    Applicant: STMicroelectronics (Rousset) SAS
    Inventors: Denis Farison, Fabrice Romain, Christophe Laurencin
  • Publication number: 20180175022
    Abstract: Bipolar transistors and MOS transistors are formed in a common process. A semiconductor layer is arranged on an insulating layer. On a side of the bipolar transistors: an insulating region including the insulating layer is formed; openings are etched through the insulating region to delimit insulating walls; the openings are filled with first epitaxial portions; and the first epitaxial portions and a first region extending under the first epitaxial portions and under the insulating walls are doped. On the side of the bipolar transistors and on a side of the MOS transistors: gate structures are formed; second epitaxial portions are made; and the second epitaxial portions covering the first epitaxial portions are doped.
    Type: Application
    Filed: February 15, 2018
    Publication date: June 21, 2018
    Applicants: STMicroelectronics (Crolles 2) SAS, STMicroelectronics (Rousset) SAS, Commissariat A L'Energie Atomique et aux Energies Alternatives
    Inventors: Olivier Weber, Emmanuel Richard, Philippe Boivin
  • Publication number: 20180174156
    Abstract: The authenticity of a product associated with a host device is verified through a process. The product contains, in segments of a non-volatile memory, several different functions stored in ciphered fashion. The process involves, in a first phase, the sending by the host device of a control signal for executing a function, with the product functioning to decipher the function and store the unciphered function in the non-volatile memory. The process further involves, in a second phase, the sending by the host device of a control signal for causing execution of the deciphered function, with the product functioning to execute the function and send a result of this execution back to the host device. The host device evaluates the received result to verify product authenticity.
    Type: Application
    Filed: February 20, 2018
    Publication date: June 21, 2018
    Applicant: STMicroelectronics (Rousset) SAS
    Inventors: Denis Farison, Fabrice Romain, Christophe Laurencin
  • Patent number: 10001829
    Abstract: An electronic device includes an appended module coupled to a core having a standby state comprising a first power supply circuit, a first clock and a circuit that recognizes multiple vocal commands timed by the first clock. The appended module includes a second power supply circuit independent of the first power supply circuit, a second clock independent of the first clock and having a frequency lower than that of the first clock, digital unit timed by the second clock including a sound capture circuit that delivers a processed sound signal, and a processing unit configured in order, in the presence of a parameter of the processed sound signal greater than a threshold, to analyze the content of the processed sound signal and to deliver, when the content of the sound signal comprises a reference pattern, an activating signal to the core that can take it out of its standby state.
    Type: Grant
    Filed: September 12, 2015
    Date of Patent: June 19, 2018
    Assignee: STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Jonathan Cottinet, Jean Claude Bini
  • Patent number: 10002906
    Abstract: The array of diodes comprises a matrix plane of diodes arranged according to columns in a first direction and according to rows in a second direction orthogonal to the first direction. The said diodes comprise a cathode region of a first type of conductivity and an anode region of a second type of conductivity, the said cathode and anode regions being superposed and disposed on an insulating layer situated on top of a semiconductor substrate.
    Type: Grant
    Filed: November 30, 2016
    Date of Patent: June 19, 2018
    Assignee: STMICROELECTRONICS (ROUSSET) SAS
    Inventors: Francesco La Rosa, Stephan Niel, Arnaud Regnier
  • Patent number: 9998689
    Abstract: An imaging device includes at least one photosite formed in a semiconducting substrate and fitted with a filtering device for filtering at least one undesired radiation. The filtering device is buried in the semiconducting substrate at a depth depending on the wavelength of the undesired radiation.
    Type: Grant
    Filed: December 1, 2014
    Date of Patent: June 12, 2018
    Assignees: STMicroelectronics (Grenoble 2) SAS, STMicroelectronics (Rousset) SAS, STMicroelectronics SA
    Inventors: David Coulon, Benoit Deschamps, Frederic Barbier