Abstract: A method for generating a succession of pseudo-random numbers includes choosing at least one chaotic map, and choosing a seed for the chaotic map and a number of iterations for the chaotic map. The succession of pseudo-random numbers are generated by executing iteratively generating a pseudo-random number as a function of a final state reached by the chaotic map iterated for the current number of iterations starting from the current seed, and generating a new seed for the chaotic map or a new number of iterations as a function of the final state.

Abstract: A method for sensing a back electromotive force induced in a winding of a voice coil electro-mechanical actuator controlled in a discontinuous mode by alternating conduction phases to off-phases includes sensing voltage at terminals of the winding during an off-phase The winding is driven during a conduction phase immediately preceding the off-phase to invert, during a final portion of the conduction phase before entering an off-phase, a direction of flow of the current through the winding.

Abstract: A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result, the portion of the heater material approximate to the phase change material region is a highly effective heater because of its high resistance, but the bulk of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device.

Abstract: A non-volatile memory electronic device is integrated on a semiconductor and is of the Flash EEPROM type with a NAND architecture including at least one memory matrix divided into physical sectors, intended as smallest erasable units, and organized in rows or word lines and columns or bit lines of memory cells. At least one row or word line of a given physical sector is electrically connected to at least one row or word line of an adjacent physical sector to form a single logic sector being erasable, with the source terminals of the corresponding cells of the pair of connected rows referring to a same selection line of a source line.

Abstract: A method of diagnosing misfire or partial combustion conditions in an internal combustion engine without using a phonic wheel discriminates the combustion conditions with soft-computing techniques directly exploiting a combustion pressure signal generated by a common pressure sensor installed in the cylinder. There exists an exploitably close correlation between the instantaneous values of the internal cylinder pressure and the occurrence of misfire or partial combustion conditions, and thus the cylinder pressure signal may be reliably used for diagnosing misfires or partial combustions in functioning conditions of the engine.

Abstract: A fully differential amplifier device includes a first input and a second input, a first output and a second output, and a differential input stage, provided with a first input transistor and a second input transistor. The first input and the first output and the second input and the second output are directly connected selectively in a first operating configuration and disconnected in a second operating configuration. The amplifier device further includes a current-generator circuit connected so as to supply respective first currents to the first and second outputs irrespective of a state of conduction of the first and second input transistors.

Abstract: A non-volatile memory electronic device is integrated on a semiconductor and is of the Flash EEPROM type with an architecture of the NAND type including at least one memory matrix divided into sectors being singularly erasable and organized in rows or word lines and columns or bit lines of memory cells. Advantageously, the matrix may include logic sectors wherein pairs of rows or word lines are electrically short-circuited and refer to a single biasing terminal, source terminals of the associated cells of each pair of rows associated with a same source select line referring to a corresponding biasing terminal, and at least one pair of independent drain select lines, each of the rows and of the lines being provided with metallization shunts to by-pass groups of bit lines and/or to speed up the propagation times of the biasing in the corresponding logic sector.

Abstract: A non-volatile memory electronic device is integrated on a semiconductor with an architecture including at least one memory matrix organized in rows or word lines and columns or bit lines of memory cells. The matrix is divided into at least a first and a second memory portions having a different access speed. The first and second memory portions may share the structures of the bit lines which correspond to one another and one by one and are electrically interrupted by controlled switches placed between the first and the second portions.

Abstract: In a displacement detection device, an acceleration sensor generates at least a first acceleration signal relating to an axis of detection, and a displacement detection circuit is connected to the acceleration sensor has a comparator stage for comparing the acceleration signal with a programmable acceleration threshold and generates a displacement-detection signal. A high-pass filter is arranged between the acceleration sensor and the comparator stage so as to reduce a DC component of the acceleration signal. The cut-off frequency of the high-pass filter is modified according to the type of displacements that are to be detected.

Abstract: A manual pointing device for a computer system, the device having at least one key that can be actuated manually by a user, and a click-event detection module coupled to the key for detecting actuation thereof. The click-event detection module is provided with an inertial sensor for detecting mechanical stresses generated by actuation of the key.

Abstract: A process is presented for realizing buried microchannels in an integrated structure comprising a monocrystalline silicon substrate. The process forms in the substrate at least one trench. A microchannel is obtained starting from a small surface port of the trench by anisotropic etching of the trench. The microchannel is then completely buried in the substrate by growing a microcrystalline structure to enclose the small surface port.

Abstract: A memory device includes a plurality of memory cells and a comparison circuit that compares a set of selected memory cells with at least one reference cell having a threshold voltage. The comparison circuit includes a bias circuit that applies a biasing voltage having a substantially monotone time pattern to the selected memory cells and to the at least one reference cell, sense amplifiers that detect the reaching of a comparison current by a cell current of each selected memory cell and by a reference current of each reference cell, a logic unit that determines a condition of each selected memory cell according to a temporal relation of the reaching of the comparison current by the corresponding cell current and by the at least one reference current, and a time shift structure that time shifts at least one of said detections according to at least one predefined interval to emulate the comparison with at least one further reference cell having a further threshold voltage.

Abstract: A control circuit for a pulsed width modulation controller includes a main controlled switch to selectively block an energization signal from a switched mode power supply and a free-wheeling synchronous switch for selectively transferring the energization signal as an output signal. The controller also includes a control circuit that includes: a PWM module having an input terminal, for connection with the switched mode power supply, and a PWM comparator; a drive circuit for the main controlled switch controlled by the PWM comparator; a low-side drive circuit for the free-wheeling synchronous switch controlled by the PWM comparator; and a ramp generator having a synchronization terminal connected to the power supply and a comparator sensing the signal on the synchronization terminal. The ramp signal from the ramp generator defines the threshold of the PWM comparator to thereby control operation of the drive circuits.

Abstract: A phase-change memory device, wherein memory cells form a memory array arranged in rows and columns. The memory cells are formed by a MOS selection device and a phase-change region connected to the selection device. The selection device is formed by first and second conductive regions which extend in a semiconductor substrate and are spaced from one another via a channel region, and by an isolated control region connected to a respective row and overlying the channel region. The first conductive region is connected to a connection line extending parallel to the rows, the second conductive region is connected to the phase-change region, and the phase-change region is connected to a respective column. The first connection line is a metal interconnection line and is connected to the first conductive region via a source-contact region made as point contact and distinct from the first connection line.

Abstract: A converter is for a differential input signal into a single-ended output signal and may include a differential pair of identical first and second transistors driven by the differential input signal, and a circuit for filtering DC components, connected between the current terminal of the second transistor not in common with the first transistor of the differential pair and an output node of the converter on which the single-ended output signal is generated. The converter generates a single-ended signal without employing a transformer, in lieu thereof the converter may include a current generator biasing the differential pair by of third and fourth output transistors, in a current mirror configuration, connected in series with the first and second transistors, respectively. The converter may also include degeneration resistors of the transistors of the current mirror, dimensioned such that the gains of the converter for each of the two input nodes of the differential signal are equal and of opposite sign.

Abstract: A silicon bipolar VCO implementing a double-coupled transformer is disclosed. The VCO circuit, which is suitable in the field of integrated RF circuits, has been integrated into a universal LNB having a down-converter block and PLL merged into a single die and implemented in silicon bipolar technology. The integrated transformer is formed by three turns of stacked metal layers, where the topmost metal layer is employed for the resonator inductance. The VCO is missing conventional biasing resistors and decoupling capacitors, thus improving phase noise and tuning range performance.

Abstract: A digital-to-analog converter (DAC) for an audio system may include at least first and second subsets of individually selectable elementary current sources for delivering analog output current contributions, a code conversion circuit for selecting elementary current sources of first and second subsets as a function of codes of a pulse code modulated (PCM) input signal. The DAC may multiply by a certain factor incoming codes of the PCM signal after their value has remained lower than a threshold for a certain period of time and for as long as their value equals or surpasses the threshold value, and may correspondingly scale and de-scale by the same factor the amplitude of the analog output current contributions produced by the elementary current sources of the two subsets.

Abstract: A dye-sensitized solar cell is provided having at least one organic compound to absorb solar radiation and donate electrons, at least one semiconductor to transport electrons, and at least one hole transporting material formed of a water-based electrolyte gel that includes at least one polymeric compound and at least one electrolyte solution. Preparation of the water based gel includes gelling at least one hydrophilic polymer that is present at least in a concentration, depending on molecular weight and/or degree of hydrolyses and/or degree of polymerization, sufficient to form the gel from the aqueous solution.

Abstract: A memory device has an array of memory cells. A column decoder is configured to address the memory cells. A charge-pump supply circuit generates a boosted supply voltage for the column decoder. A connecting stage is arranged between the supply circuit and the column decoder. The connecting stage switches between a high-impedance state and a low-impedance state, and is configured to switch into the high-impedance state in given operating conditions of the memory device, in particular during a reading step.

Abstract: A method manufactures a non-volatile memory device on a semiconductor substrate that includes a matrix of memory cells and associated circuitry. The method includes: forming a filling dielectric layer on the whole substrate until gates of the cells and a conductive layer of the circuitry are completely covered, removing the dielectric layer until upper portions of the gates of the cells and the conductive layer are exposed, defining a plurality of gate electrodes of the transistors of the circuitry in the conductive layer, and forming source and drain regions of the transistors of the circuitry in the substrate. The method also comprises: forming spacers on side walls of gate electrodes of the transistors of the circuitry, and forming a silicide layer on the electrodes of the cells, on the gate electrodes of the transistors of the circuitry and on the source and drain regions of the transistors of said circuitry.