Abstract: A method of driving a sensorless brushless motor in PWM mode includes tristating a winding during a time window for detecting a zero-cross of the back electromotive force induced in the winding by rotation of a rotor, monitoring voltage of the tristated winding during an unmasked portion of the time window, and detecting during the time window a zero-cross event of the induced back electromotive force. The method includes verifying whether the zero-cross event occurred during the unmasked portion, modifying for the next cycle the duration of the time window and/or of the unmasked portion thereof based upon the verification, defining a safety interval in the unmasked time window, modifying the duration of the time window and/or of the unmasked portion thereof depending on whether the zero-cross event has been detected during the safety interval.

Abstract: A DC-DC converter including: a switch, having a control terminal receiving a control signal, and a conduction terminal supplying a current; a load, coupled to the conduction terminal of the switch and selectively receiving the current; a control circuit, receiving a clock signal and generating the control signal in synchronism with the clock signal; an overcurrent sensor, coupled to the switch so as to monitor an electrical quantity correlated to the current and to output a protection signal in presence of overcurrent; moreover including overcurrent-protection circuitry, receiving the protection signal and the clock signal and generating a disabling signal for the control circuit if delay between an overcurrent detection and the clock signal is shorter than a detection time.

Abstract: The method of synchronizing sequential phase switchings in driving stator windings of a multiphase sensorless brushless motor with a reconstructed information on the current angular position of a permanent magnet rotor, includes sampling on a currently non-conductive stator winding a voltage induced thereon by the resultant magnetic field produced by the drive current forced through currently conductive stator windings that inverts its sign when the rotor transitions across a plurality of significant angular positions, at which orthogonality between the resultant magnetic field and a magnetic axis of the non-excited winding verifies.

Abstract: A composite product is for an electrode of a fuel cell including a catalyst, an electrically conductive phase which supports such catalyst, a protonically conductive phase, and a porous phase. At least the contact between the catalyst and the electrically and protonically conductive phases, and preferably also the contact of the porous phase with the catalyst and with the electrically and protonically conductive phases, is improved or maximized. Each of the phases is individually continuous, and such phases are continuous with each other.

Abstract: A digitizer for a digital receiver system includes an input terminal to receive a modulated analog input voltage signal, and an output terminal to provide an output voltage signal being a digital conversion of the input voltage signal. A comparator circuit has an output coupled to the output terminal and includes an operational amplifier having a first input terminal coupled to the input terminal. A threshold generator circuit is between the input terminal and a second input terminal of the at least one operational amplifier, to provide a tunable voltage reference signal thereto. The threshold generator circuit includes a thresholding circuit to determine a threshold voltage value of the modulated analog input voltage signal, and a tunable voltage reference circuit coupled to the thresholding circuit to generate the tunable voltage reference signal as a function of the threshold voltage value of the modulated analog input voltage signal.

Abstract: A memory has an array of k-level cells, organized into pages of words, each storing a string of bits. The memory device includes a coding circuit input with strings of N bits, and generates corresponding k-level strings. A program circuit is input with the k-level strings to stores in groups of c cells with k levels. A read circuit reads data stored in groups of c cells with k levels and generates k-level strings. A read decoding circuit is input with k-level strings read from groups of c cells with k levels to generate strings of N bits. The words of each page are grouped in groups of words, each word including groups of c cells with k levels, and at least one remaining bit of the word being stored, with corresponding remaining bits of other words of the page, in a group of c cells with k levels.

Abstract: A basic electronic circuit generates a magnitude. The circuit has certain structural characteristics and the magnitude undergoes variations in function of the structural characteristics of the circuit. The circuit comprises at least two circuit parts suitable for supplying respective fractions of the magnitude and the at least two circuit parts have different structural characteristics.

Abstract: A method and device for encrypting and/or decrypting binary data blocks protecting both confidentiality and integrity of data sent to or received from a memory. The encryption method comprises steps of: applying to the input data block a reversible scrambling process, the scrambling process providing a scrambled data block in which the bits of the input data block are mixed so that a modification of one bit in the scrambled data block impacts on every bit of the input data block, and applying to the scrambled data block a stream cipher encryption algorithm providing an encrypted data block. Application can be made to secured integrated circuits requiring to securely store data in an external memory.

Abstract: Digital signals are transmitted on a bus at given instants selectively in a non-encoded format and an encoded format. The decision whether to transmit the signals in non-encoded format or in encoded format is taken in part, based on a comparison of the signal to be transmitted on the bus for an instant of the aforesaid given instants with the signal transmitter on the bus for the preceding instant, so as to minimize switching activity on the bus.

Abstract: According to an embodiment of a method for manufacturing a MISFET device, in a semiconductor wafer, a semiconductor layer is formed, having a first type of conductivity and a first level of doping. A first body region and a second body region, having a second type of conductivity, opposite to the first type of conductivity, and an enriched region, extending between the first and second body regions are formed in the semiconductor layer. The enriched region has the first type of conductivity and a second level of doping, higher than the first level of doping. Moreover, a gate electrode is formed over the enriched region and over part of the first and second body regions, and a dielectric gate structure is formed between the gate electrode and the semiconductor layer, the dielectric gate structure having a larger thickness on the enriched region and a smaller thickness on the first and second body regions.

Abstract: A circuit for determining the value of a datum stored in an array memory cell of a non-volatile memory device having at least one reference memory cell of known content. The circuit has a determination stage, which compares an array electrical quantity, correlated to a current flowing in the array memory cell, with a reference electrical quantity, and supplies an output signal indicative of the datum, based on the comparison; and a generator circuit, provided with an input receiving a target electrical quantity correlated to a current flowing in use in the reference memory cell, and an output, which supplies the reference electrical quantity with a controlled value close or equal to that of the target electrical quantity. The generator circuit is provided with a variable generator, and a control unit connected to, and designed to control, the variable generator so that it will generate the controlled value of the reference electrical quantity.

Abstract: An electronic device includes a substrate provided with a passing opening and a MEMS device including an active surface wherein a portion of the MEMS device is integrated sensitive to chemical/physical variations of a fluid. The active surface of the MEMS device faces the substrate and is spaced therefrom, the sensitive portion being aligned to the opening. A protective package incorporates at least partially the MEMS device and the substrate, leaving at least the sensitive portion of the MEMS device, and the opening of the substrate exposed. A barrier element is positioned in an area which surrounds the sensitive portion to realize a protection structure for the MEMS device, so that the sensitive portion is free.

Abstract: A scan chain architecture includes a cascade of flip-flop cells each having at least one input and output or an inverted output. The output or inverted output of a flip-flop is connected to the input of the subsequent flip-flop. The connection between two consecutive flip-flops of the scan chain is selected according to the status of a given flip-flop cell, the status of a previous cell, and the status of the connection between these cells.

Abstract: An integrated circuit includes an array of memory cells arranged in a plurality of sectors. Each sector includes a plurality of distinct random access memory resources able to be accessed differently in different modes. Peripheral circuitry is commonly shared by at least some of the sectors for addressing and reading/writing data. A respective dedicated controllable power supply line is coupled to each sector.

Abstract: An embodiment of a MOS device resistant to ionizing-radiation, has: a surface semiconductor layer with a first type of conductivity; a gate structure formed above the surface semiconductor layer, and constituted by a dielectric gate region and a gate-electrode region overlying the dielectric gate region; and body regions having a second type of conductivity, formed within the surface semiconductor layer, laterally and partially underneath the gate structure. In particular, the dielectric gate region is formed by a central region having a first thickness, and by side regions having a second thickness, smaller than the first thickness; the central region overlying an intercell region of the surface semiconductor layer, set between the body regions.

Abstract: A voltage regulator including an output stage to generate an output voltage based upon a control voltage determined as a function of a difference between a reference voltage and a voltage representative of the output voltage. A sense resistor is coupled in series with the output stage and an auxiliary power stage is coupled in parallel with the output stage and cooperates therewith to supply a load as a function of a voltage drop across the sense resistor. A scaled replica stage of the output stage is controlled by the control voltage to generate a replica voltage of the output voltage. A bias network biases the scaled replica stage and output stage with identical currents to keep constant bias voltages. The output stage, the auxiliary power stage, the scaled replica stage, and the bias network each have high voltage transistors.

Abstract: A memory device may include an array of addressable three-level cells, a coding circuit being input with three-bit strings and generating corresponding ternary strings based upon a code, and a program circuit being input with the ternary strings and storing them in respective pairs of three-level cells. The memory device also may include a read circuit reading stored ternary strings in the respective pairs of three-level cells, and a decoding circuit being input with the stored ternary strings and generating corresponding strings of three bits based upon the code.

Abstract: A method and system for making error corrections on digital information coded as symbol sequences, for example digital information stored in electronic memory systems or transmitted from and to these systems is described, provides the transmission of sequences incorporating a portion of error corrector code allowing the sequence which is more probably the original transmitted through the calculation of an error syndrome using a parity matrix to be restored when received. Advantageously according to embodiments of the invention, the error code incorporated in the original sequence belongs to a non Boolean group.

Abstract: A voltage regulator connected to a memory cell is configured by identifying at least a first and a second operation regions of the cell and associating the first and second operation regions with respective first and second operation conditions of the memory cell. An operative condition of the memory cell involved in a programming operation is detected, and at least a configuration signal of the regulator according to said detected operative condition is generated, this configuration signal taking a first and a second value associated with the first and second operation conditions.

Abstract: Basic redundancy information is non-volatily stored in a reserved area of an addressable area of a memory array, and is copied to volatile storage therein at every power-on of the memory device. The unpredictable though statistically inevitable presence of failed array elements in such a reserved area of the memory array corrupts the basic redundancy information established during the test-on wafer (EWS) phase of the fabrication process. This increases the number of rejects, and lowers the yield of the fabrication process. This problem is addressed by writing the basic redundancy data in the reserved area of the array with an ECC technique using a certain error correction code. The error correction code may be chosen among majority codes 3, 5, 7, 15 and the like, or the Hamming code for 1, 2, 3 or more errors, as a function of the fail probability of a memory cell as determined by the EWS phase during fabrication.