Abstract: A system for interfacing an LC sensor includes a starter configured to selectively start an oscillation of the LC sensor. The system also includes an analog peak detector configured to determine a signal (Vpeak) being indicative of a peak voltage of the oscillation of the LC sensor and a detector configured to determine a state of the LC sensor as a function of the signal (Vpeak) determined by the analog peak detector.

Abstract: A method and a controller for controlling a converter are provided. In the method and controller, a capacitance is charged simultaneously using a first current and a second current that is different than the first current or discharged simultaneously using the first current and the second current. Sourcing and sinking transistors source or sink the first current for charging or discharging the capacitance. An operational transconductance amplifier determines a level of the second current based on a level of current flowing through the resonant tank. The operational transconductance amplifier sources or sinks the second current for charging or discharging the capacitance. Further, logic is provided to output a switching signal for operating the converter based on a voltage across the capacitance.

Abstract: A compensation circuit receives a sensing signal from a Hall sensor and outputs a compensated Hall sensing signal. The compensation circuit has a gain that is inversely proportional to Hall sensor drift mobility. The compensated Hall sensing signal is temperature-compensated.

Abstract: Hall sensing signals are received in a spinning readout pattern of subsequent readout phases, wherein the pattern is cyclically repeated at a spinning frequency and a polarity of the Hall sensor signals is reversed in two non-adjacent readout phases of the readout pattern. A signal storage circuit includes signal storage capacitors. An accumulation circuit includes accumulation capacitors. A switch network is selectively actuated to couple the signal storage capacitors with the accumulation capacitors synchronously with phases in the spinning readout pattern in subsequent alternating first and second periods. The spinning output is stored with alternating opposite signs on the signal storage capacitors and the Hall sensing signals are stored in the signal storage capacitors and then accumulated on the accumulation capacitors with alternate signs in subsequent periods. The accumulated output signal is then demodulated with a demodulation frequency half the spinning frequency.

Abstract: A signal interface has a compression unit and a data memory. The compression unit is configured to input an input datum from signal data generated by at least one sensor and further configured to identify the presence or absence of at least one repetition condition in the input datum. If the presence of the at least one repetition condition of the input datum is identified, the compression unit encodes the input datum in a compressed way to generate a compressed datum and saves the compressed datum in the data memory. If the presence of the at least one repetition condition of the input datum is not identified, the compression unit saves the uncompressed input datum in the data memory.

Abstract: A control device for a switching regulator having two or more converter stages operating with interleaved operation, each converter stage including an inductive element and a switch element, generates command signals having a switching period for controlling switching of the switch elements, and determining alternation of a storage phase of energy in the respective inductive element and a transfer phase of the stored energy onto an output element. The control device generates the command signals phase-offset by an appropriate fraction of the switching period to obtain interleaved operation. In particular, a synchronism stage generates a synchronism signal and a control stage generates the command signals for the converter stages timed by the same synchronism signal.

Abstract: A method of interfacing a LC sensor with a control unit is provided. The control unit may include first and second contacts, where the LC sensor is connected between the first and the second contact. A capacitor is connected between the first contact and a ground. To start the oscillation of the LC sensor, the method may include during a first phase, connecting the first contact to a supply voltage and placing the second contact in a high impedance state such that the capacitor is charged through the supply voltage. During a second phase, the first contact may be placed in a high impedance state, and the second contact connected to the ground such that the capacitor transfers charge towards the LC sensor. During a third phase, the first contact and the second contact may be placed in a high impedance state so the LC sensor is able to oscillate.

Abstract: A converter includes first and second input terminals and first and second output terminals. The converter also includes an output capacitor coupled between the first output terminal and the second output terminal, and a magnetic component having two input terminals and three output terminals. A first output terminal of the magnetic component is coupled through a first electronic switch to the second output terminal of the converter, a second output terminal of the magnetic component is coupled to the first output terminal of the converter, and a third output terminal of the magnetic component is coupled through a second electronic switch to the second output terminal of the electronic converter. In addition, the converter includes a switching stage configured to transfer current pulses from the first input terminal and the second input terminal of the converter to the two input terminals of the magnetic component.

Abstract: The present disclosure is directed to a ceramic substrate that includes a plurality of contact pads, a plurality of electrical traces, and a microelectromechanical die. Contacts on the die are coupled to the plurality of contact pads through the plurality of electrical traces. The substrate also includes a plurality of memory bits formed directly on the substrate. Each memory bit is coupled between a first one of the contact pads and a second one of the contact pads.

Abstract: An embodiment method includes storing, in each of a first plurality of memory locations of a memory, an address of another of the first plurality of memory locations, and reading, from a bus signal received at the memory, an address of a first one of the first plurality of memory locations. The method further includes reading data stored in the first one of the first plurality of memory locations, and determining, using the read data, whether a read error has occurred.

Abstract: An electrical protection device including an input line, an output terminal, and a power transistor coupled between the input line and the output terminal A sensing transistor is connected between the input line and the output terminal and has a body terminal. A control stage is coupled to respective control terminals of the power transistor and of the sensing transistor and is configured to limit a first current of the power transistor to a protection value. A body-driving stage is coupled to the body terminal and is configured to bias the body terminal of the sensing transistor as a function of an operating condition of the power transistor.

Abstract: In one example, a method of compensating resistance in an integrated circuit includes providing a four terminal resistor in a semiconductor substrate. The resistor includes a first resistor and a second resistor coupled in series, a first terminal at a first end of the resistor, a second terminal at a second end of the resistor, a test terminal at a node connecting the first resistor and the second resistor, and a tuning terminal. The first resistor has a first conductivity type and the second resistor has a second conductivity type opposite to the first conductivity type. The first resistor includes a first portion extending along a first direction and a second portion extending along a second direction perpendicular to the first direction. The method further includes computing a voltage to be applied at the tuning terminal to compensate the difference between the resistance of the first and the second resistors.

Abstract: A circuit for generating a bandgap voltage includes a circuit module for generation of a base-emitter voltage difference formed by a pair of PNP bipolar substrate transistors which identify a first current path and a second current path. A first current mirror of an n type is connected between the first and second branches and is further connected via a resistance for adjustment of the bandgap voltage to the second bipolar transistor. A second current mirror of a p type is connected between the first and second branches, and connected so that the current mirrors repeat current of each other. In operation to generate the bandgap voltage, current flows from the supply voltage to ground only through said the first and second bipolar substrate transistors.

Abstract: A method for use in manufacturing semiconductor devices such as, e.g., semiconductor power devices includes providing: a semiconductor die provided with bonding pads, a lead frame for the semiconductor die, a wire bonding layout including electrically conductive wires coupling bonding pads of the semiconductor die with leads in the lead frame. One or more bonding pads of the semiconductor die is/are coupled to a respective lead in the lead frame via a plurality of wires with a plurality of mutually insulated testing lands in the respective lead, so that the plurality of wires are coupled to respective testing lands. The electrical connection between such a bonding pad and the respective lead may be tested by testing the individual electrical connections between the bonding pad and the plurality of testing lands.

Abstract: An embodiment described herein includes a method for producing a wafer of a first semiconductor material. Said first semiconductor material has a first melting temperature. The method comprises providing a crystalline substrate of a second semiconductor material having a second melting temperature lower than the first melting temperature, and exposing the crystalline substrate to a flow of first material precursors for forming a first layer of the first material on the substrate. The method further comprising bringing the crystalline substrate to a first process temperature higher than the second melting temperature, and at the same time lower than the first melting temperature, in such a way the second material melts, separating the second melted material from the first layer, and exposing the first layer to the flow of the first material precursor for forming a second layer of the first material on the first layer.

Abstract: Color signals to be displayed on a colored display surface and having a first gamut in a color space, are subjected to radiometric compensation. An embodiment includes displaying on the colored surface a set of control points of a known color, acquiring via a camera the control points as displayed on the colored surface and evaluating at least one second color gamut of the control points displayed on the colored surface. The second color gamut(s) is/are misaligned with respect to the first color gamut due to the display surface being a colored surface. The method may also include evaluating as an intersection gamut, the misalignment of the second color gamut(s) with respect to the first color gamut, calculating the color transformation operator(s) as a function of the misalignment evaluated, and applying the color transformation operator(s) to the color signals for display on the colored display surface.

Abstract: A micro-electro-mechanical device formed in a monolithic body of semiconductor material accommodating a first buried cavity; a sensitive region above the first buried cavity; and a second buried cavity extending in the sensitive region. A decoupling trench extends from a first face of the monolithic body as far as the first buried cavity and laterally surrounds the second buried cavity. The decoupling trench separates the sensitive region from a peripheral portion of the monolithic body.

Abstract: Described herein is a transceiver circuit for a capacitive micromachined ultrasonic transducer (CMUT), provided with: a transmitter stage, which generates excitation pulses for a first node of the CMUT transducer during a transmitting phase, a second node of the CMUT transducer being coupled to a biasing voltage; a receiver stage that is selectively coupled to the first node during a receiving phase and has an amplification stage; a switching stage that couples the receiver stage to the first node during the receiving phase and decouples the receiver stage from the first node during the transmitting phase. The amplification stage is provided with a charge amplifier that has an input terminal and is biased as a function of a biasing voltage; and the switching stage is coupled to the same biasing voltage thereby minimizing an injection of charge into the input terminal upon switching from the transmitting phase to the receiving phase.

Abstract: A method for real-time quantitative detection of single-type, target nucleic acid sequences amplified using a PCR in a microwell, comprising introducing in the microwell a sample comprising target nucleic acid sequences, magnetic primers, and labelling probes; performing an amplification cycle to form labelled amplicons; attracting the magnetic primers to a surface through a magnetic field to form a layer including labelled amplification products and free magnetic primers; and detecting the labelled amplification products in the layer with a surface-specific reading method.

Abstract: A method can be used for reducing a memory operation time in a non-volatile memory device having a memory array with a number of memory cells. The method includes performing a first execution of the memory operation on a set of memory cells by applying a first biasing configuration, storing information associated to the first biasing configuration, and performing a second execution, subsequent to the first execution, of the memory operation on the same set of memory cells by applying a second biasing configuration that is determined according to the stored information associated to the first biasing configuration.