Abstract: An optoelectronic device for detecting radiation, comprising a semiconductor body including: a cathode region delimited by a front surface, having a first conductivity type and including a bottom layer; an anode region having a second conductivity type, which extends in the cathode region starting from the front surface and forms a surface junction with the cathode region; and a buried region having the second conductivity type, which extends within the cathode region and forms a buried junction with the bottom layer. The cathode region further includes a buffer layer, which is arranged underneath the anode region and overlies, in direct contact, the bottom layer. The buffer layer has a doping level higher than the doping level of the bottom layer.

Abstract: A micro-electro-mechanical pressure sensor device, formed by a cap region and by a sensor region of semiconductor material. An air gap extends between the sensor region and the cap region; a buried cavity extends underneath the air gap, in the sensor region, and delimits a membrane at the bottom. A through trench extends within the sensor region and laterally delimits a sensitive portion housing the membrane, a supporting portion, and a spring portion, the spring portion connecting the sensitive portion to the supporting portion. A channel extends within the spring portion and connects the buried cavity to a face of the second region. The first air gap is fluidically connected to the outside of the device, and the buried cavity is isolated from the outside via a sealing region arranged between the sensor region and the cap region.

Abstract: A rectifier bridge circuit includes a first SCR/IGBT switch and a second SCR/IGBT switch coupled to a circuit input to receive an ac input voltage. The first and second SCR/IGBT switches are alternatively switchable to generate a rectified voltage at a circuit output. Control currents coupled to control terminals of the first and second SCR/IGBT switches are power supply sourced from an auxiliary dc source generated by rectifying the ac input voltage. The control currents are generated by current sources coupled between the auxiliary dc source and the control terminals of the first and second SCR/IGBT switches. The current sources are selectively activatable to produce gating currents for switching on and off the first and second SCR/IGBT switches. A controller unit is provided to control the current sources via level shifter circuits. The control implements progressive conduction time of the first and second SCR/IGBT switches so as to provide inrush current limitation.

Abstract: A control device for a switching power converter having an inductor element, a switch coupled to the inductor element, a storage element coupled to an output on which an output voltage is provided, and a diode element coupled to the storage element. The control device generates a command signal to control the switch and determine storage of energy in the inductor element in a first interval, and transfer of energy onto the storage element through the diode element in a second interval. A voltage shifter module generates a feedback voltage shifted relative to the output voltage. An amplification module has a first input receiving the feedback voltage, a second input receiving the reference voltage, and an output that supplies, as a function of the difference between the feedback and reference voltages, a control signal. A control unit receives the control signal and generates the command signal to control the switch.

Abstract: A switching converter includes a first electronic switch and a second electronic switch and respective drive circuits for switching on and switching off alternatively the first and second electronic switches. The drive circuits have a supply line for supplying to them a supply voltage. At least one of the drive circuits has, coupled to it, a capacitor for storing the supply voltage. An electronic-switching circuit is provided for selectively disconnecting the drive circuit from the supply line when the electronic switch driven thereby is switched off. In this mode, the drive circuit is supplied by the voltage stored on the capacitor.

Abstract: An address decoder circuit is designed to address and bias memory cells of a memory array of a non-volatile memory device. The address decoder circuit includes a charge-pump stage configured to generate a boosted negative voltage. A control stage is operatively coupled to the charge-pump stage for controlling switching on/off thereof as a function of a configuration signal that determines the value of the boosted negative voltage. A decoding stage is configured so as to decode address signals received at its input and generate biasing signals for addressing and biasing the memory cells. A negative voltage management module has a regulator stage, designed to receive the boosted negative voltage from the charge-pump stage and generate a regulated negative voltage for the decoding stage, having a lower ripple as compared to the boosted negative voltage generated by the charge-pump stage.

Abstract: A power receiver includes a resonant circuit generating an internal supply voltage. A voltage rectification circuit receives the internal supply voltage and generate a corresponding rectified voltage. A voltage regulator receives the rectified voltage and a modulation signal and is configured to generate a corresponding regulated voltage. A controlled voltage-to-current converter receives the regulated voltage and the modulation signal. The converter operates to deliver, through an output line of the power receiver, an output current having a DC value corresponding to the DC value of said regulated voltage and having an AC value corresponding to said modulation signal.

Abstract: A method and apparatus for controlling a converter are provided. In the method and apparatus, a converter is operated in accordance with a duty cycle and based on a difference between a feedback signal representing an output voltage of the converter and a reference signal. An overcurrent condition is detected in the converter. In response to detecting the overcurrent condition, the duty cycle used to operate the converter is limited and the reference signal is made to track the feedback signal to mitigate an output voltage overshoot at an end of the overcurrent condition.

Abstract: A semiconductor device includes: a semiconductor die having first and second opposite surfaces, a die pad having the first surface of the semiconductor die attached thereon, an electrically conductive ground pad at the second surface of the semiconductor die, a device package coupled with the semiconductor die with the ground pad lying between the semiconductor die and the package, and ground wiring or tracks for the semiconductor die between the second surface of the semiconductor die and the ground pad. A further ground connection may be provided between the ground pad at the second surface of the semiconductor die and the die pad having the semiconductor die attached thereon.

Abstract: The present disclosure is directed to a high power factor quasi resonant converter. The converter converts an AC power line input to a DC output to power a load, generally a string of LEDs. The power input is fed into a transformer being controlled by a power switch. The power switch is driven by a controller having a shaping circuit. The shaping circuit uses a current generator, switched resistor and capacitor to produce a sinusoidal reference voltage signal. The controller drives the power switch based on the voltage reference signal, resulting in a sinusoidal input current in a primary winding of the transformer, resulting in high power factor and low total harmonic distortion for the converter.

Abstract: One or more embodiments are directed to a microfluidic delivery system that dispenses a fluid. The microfluidic delivery system may be provided in a variety of orientations. In one embodiment, the microfluidic delivery system is vertical so that fluid being expelled opposes gravity. In another embodiment, the microfluidic delivery system is orientated sideways so that fluid being expelled has a horizontal component. In yet another embodiment, the microfluidic delivery system faces downward.

Abstract: A level shifter circuit is designed to shift an input signal that switches within a first voltage range to supply an output signal that switches within a second voltage range, higher than the first voltage range. A first inverter stage has an input receiving the input signal and also has an output. A first capacitive element is connected between the output of the first input inverter stage and a first holding node. A latch stage is connected between the first holding node and a second holding node that is coupled to an output terminal, on which the output signal is present. The first input inverter stage is designed to operate in the first voltage range, and the latch stage is designed to operate in the second voltage range.

Abstract: In an embodiment, hand gestures, such as hand or finger hovering, in the proximity space of a sensing panel are detected from X-node and Y-node sensing signals indicative of the presence of a hand feature at corresponding row locations and column locations of a sensing panel. Hovering is detected by detecting the locations of maxima for a plurality of frames over a time window for a set of X-node sensing signals and for a set of Y-node sensing signals by recognizing a hovering gesture if the locations of the maxima detected vary over the plurality of frames for one of the sets of X-node and Y-node sensing signals while remaining stationary for the other of the sets of X-node and Y-node sensing signals.

Abstract: A method for compensating non-linearities of a read signal generated by a variable-capacitance inertial sensor including a first fixed electrode and a second fixed electrode and a mobile electrode, which is spatially arranged between the first and second fixed electrodes and is capacitively coupled to the first and second fixed electrodes, said method comprising the steps of: acquiring the read signal; identifying a first linear component and at least one first nonlinear component of the read signal; a generating a compensated output signal by subtracting the first nonlinear component from the read signal.

Abstract: An embodiment for realizing a power device with trench-gate structure integrated on a semiconductor substrate, and including etching the semiconductor substrate to make a first trench having first side walls and a first bottom; and further etching said semiconductor substrate to make a second trench inside the first trench, realized in a self-aligned way and below this first trench, the first trench and the second trench defining the trench-gate structure with a bird beak-like transition profile suitable for containing a gate region.

Abstract: A method can be used to measure a load driven by a switching amplifier having a differential input, an LC output demodulator filter and a feedback network between the amplifier output and the differential input. The amplifier is AC driven in a differential and in a common mode by applying a common. The feedback network provides feedback towards the differential input from downstream the LC demodulator filter by computing the impedance of the load as a function of the differential mode output current and the common mode output current. The feedback network provides feedback towards the differential input from upstream the LC demodulator filter by measuring the impedance value of the inductor of the LC demodulator filter, and computing the impedance of the load as a function of the differential mode output current, the common mode output current and the impedance value of the inductor of the LC demodulator filter.

Abstract: An electric transformer device (balun) is formed on a support plate having a first base face and an opposite second base face. The balun includes a first port (40) connectable to an electrical line for a differential signal and a second port connectable to an electrical line for a single-ended signal. A first printed conductive track is associated to the first base face of the support plate for connecting the first port to the second port. A printed conductive path is associated to the second base face of the support plate for connecting the first port to the second port. The printed conductive path is formed of a symmetric second and third printed conductive tracks.

Abstract: A transimpedance amplifier circuit includes a feedback control loop that generates a compensation current at an input of a transimpedance amplifier. The feedback control loop includes a differential integrator with an integration capacitor. A time constant associated with charging the integration capacitor is variable as a function of a pre-charge control signal. During a pre-charge phase, the pre-charge control signal is set to a first value so as to set the time constant associated with charging the integration capacitor to a first time constant value. During an operation phase, the pre-charge control signal is set to a second value so as to increase the time constant associated with charging the integration capacitor to a second time constant value greater than the first time constant value for the pre-charge phase.

Abstract: An electronic system supports superior coupling by implementing a communication mechanism that provides at least for horizontal communication for example, on the basis of wired and/or wireless communication channels, in the system. Hence, by enhancing vertical and horizontal communication capabilities in the electronic system, a reduced overall size may be achieved, while nevertheless reducing complexity in printed circuit boards coupled to the electronic system. In this manner, overall manufacturing costs and reliability of complex electronic systems may be enhanced.

Abstract: A substrate includes first and second semiconductor layers doped with opposite conductivity type in contact with each other at a PN junction to form a junction diode. At least one through silicon via structure, formed by a conductive region surrounded laterally by an insulating layer, extends completely through the first semiconductor layer and partially through the second semiconductor layer with a back end embedded in, and in physical and electrical contact with, the second semiconductor layer. A first electrical connection is made to the first through silicon via structure and a second electrical connection is made to the first semiconductor layer. A testing current is applied to and sensed at the first and second electrical connections in order to detect a defect in the at least one through silicon via structure.