Abstract: A gate driver circuit for a half bridge or full bridge output driver stage having a high side branch connected to one or more high side transistors and a low side branch connected to one or more low side transistors. A high side gate driver and a low side gate driver receive input signals at a low voltage level and output signals at a high voltage level as gate driving signals for the high side transistors and low side transistors. Each of the high side and the low side branches of the gate driver includes a set-reset latch having a signal output that is fed as a gate signal to the corresponding transistor of the half bridge or full bridge driver. A differential capacitive level shifter circuit receives the input signals at a low voltage level and outputs high voltage signals to drive the set and reset inputs of the set-reset latch.

Abstract: A non-volatile memory device includes a memory array having memory cells arranged in wordlines and receiving a supply voltage. A row decoder includes an input and pre-decoding module, which is configured to receive address signals and generate pre-decoded address signals at low voltage, in the range of the supply voltage. A driving module is configured to generate biasing signals for biasing the wordlines of the memory array starting from decoded address signals, which are a function of the pre-decoded address signals, at high voltage and in the range of a boosted voltage higher than the supply voltage. A processing module is configured to receive the pre-decoded address signals and to jointly execute an operation of logic combination and an operation of voltage boosting of the pre-decoded address signals for generation of the decoded address signals.

Abstract: A voltage-regulator device includes an error-amplifier stage configured to receive a first reference voltage and a feedback voltage, an output amplifier stage coupled to the error-amplifier stage and configured to generate an output voltage related to the first reference voltage by an amplification factor, and a feedback stage configured to generate the feedback voltage. A compensation stage is configured to implement a second feedback loop, and cause, in response to a variation of the output voltage, a corresponding variation of a first biasing voltage for the output amplifier stage. The compensation stage includes a coupling-capacitor element coupled between the output amplifier stage and a first internal node, and a driving module coupled between the first internal node, and the output amplifier stage and configured to generate a compensation voltage for driving the output amplifier stage.

Abstract: A differential amplifier generates an output voltage waveform exhibiting a slew rate over a rise time. The amplifier is powered from a dc voltage input and includes a set of differential pairs having a bias current flowing therethrough and a Miller compensation capacitance. A comparator functions to compare a voltage at the dc voltage input against a reference voltage in order to detect when the voltage drops below the reference voltage. A gain stage controls the gain of the differential amplifier and a bias current control circuit controls the bias current of the differential amplifier. In response to the detection by the comparator of the voltage dropping below the reference voltage, the gain stage and the bias current control circuit decrease the gain of the amplifier and jointly decrease the bias current in order to maintain a value of the rise time.

Abstract: A communication interface couples a transmission circuit with an interconnection network. The transmission circuit requests transmission of a predetermined amount of data. The communication interface receives data segments from the transmission circuit, stores the data segments in a memory, and verifies whether the memory contains the predetermined amount of data. In the case where the memory contains the predetermined amount of data, the communication interface starts transmission of the data stored in the memory. Alternatively, in the case where the memory contains an amount of data less than the predetermined amount of data, the communication interface determines a parameter that identifies the time that has elapsed since the transmission request or the first datum was received from the aforesaid transmission circuit, and verifies whether the time elapsed exceeds a time threshold.

Abstract: A MEMS acoustic transducer has: a detection structure, which generates an electrical detection quantity as a function of a detected acoustic signal; and an electronic interface circuit, which is operatively coupled to the detection structure and generates an electrical output quantity as a function of the electrical detection quantity.

Abstract: A driver includes a high-side driver transistor coupled between supply voltage and the gate drive nodes and provides a first charge current to a high side gate node of the high-side driver transistor until the gate drive node reaches a first gate drive threshold. Then a second charge current is provided to the high side gate node that is less than the first charge current. The gate drive node is limited to a first clamped threshold for a delay time. A gate drive current rise signal sets the value of the second charge current that charges the high side gate node and after the delay time the gate drive voltage is limited to a second clamped threshold greater than the first clamped threshold but less than the supply voltage. A gate drive programmable control signal sets the value of the second clamped threshold.

Abstract: An embodiment relates to a method for the detection of texture of a digital image, including providing a raw data image of the image by means of Bayer image sensors, determining noise in at least a region of the raw data image and determining the texture based on the determined noise without using a high pass or low pass filter.

Abstract: In one embodiment, a semiconductor device includes one or more metallizations, such as, e.g., Cu-RDL metallizations, provided on a passivation layer over a dielectric layer. A via is provided through the passivation layer and the dielectric layer in the vicinity of the corners of the metallization. The via may be a “dummy” via without electrical connections to an active device and may be provided at a distance between approximately 1 micron (10?6 m.) and approximately 10 micron (10?5 m.) from each one of said converging sides landing on an underlying metal layer.

Abstract: A sensing structure is presented for use in testing integrated circuits on a substrate. The sensing structure includes a probe region corresponding to a conductive region for connecting to the integrated circuit. A first sensing region at least partially surrounds the probe region. A plurality of sensing elements connects in series such that a first of the plurality of sensing elements has two terminals respectively connected to the first sensing region and the probe region. And a second of the plurality of sensing elements has two terminals respectively connected to the probe region and a first reference potential.

Abstract: An amplifier includes a first input branch and a second input branch that form a differential input stage and a current mirror connected to the differential input. The current mirror is governed as a function of a common mode feedback signal applied to a control node of the current mirror. A second, amplification, stage includes a branch flowing through which is a current, which is a function of the current that flows in the first input branch, and is in turn connected to a first output branch. A capacitive element is coupled between the control node and the second stage. The circuit is symmetrical with respect to the input stage.

Abstract: A high-voltage electronic switch includes first and second transistors defining a current flow path between an input and output of the switch. The transistors have a common point of the current flow path and a common control terminal. A control circuit includes a voltage line receiving a limit operating voltage and first and second branches coupled between the voltage line and the common point and common control terminal, respectively. Further transistors are activated, upon turning-off of the first and second transistors, for coupling the branches to the voltage line. The branches include a parallel connected resistor, diode, and string of diodes with opposite polarities. The diode of the first branch plus string of diodes of the second branch and diode of the second branch plus string of diodes of the first branch provide coupling paths between the voltage line and, respectively, the common point and common control terminal.

Abstract: A Hall sensor may include a Hall sensing element configured to produce a Hall voltage indicative of a magnetic field when traversed by an electric current, and a first pair of bias electrodes mutually opposed in a first direction across the Hall sensing element. The Hall sensor may include a second pair of bias electrodes mutually opposed in a second direction across the Hall sensing element. The Hall sensor may include a first pair of sensing electrodes mutually opposed in a third direction across the Hall sensing element, and a second pair of sensing electrodes mutually opposed in a fourth direction across the Hall sensing element. The fourth direction may be orthogonal to the third direction, each sensing electrode being between a bias electrode of the first pair and a bias electrode of the second pair.

Abstract: Methods form an electronic semiconductor device that includes a body having a first side and a second side opposite to one another and including a first structural region facing the second side, and a second structural region extending over the first structural region and facing the first side. A body region extends in the second structural region at the first side. A source region extends inside the body region and a lightly-doped drain region faces the first side of the body. A gate electrode is formed over the body region. A trench dielectric region extends through the second structural region in a first trench conductive region immediately adjacent to the trench dielectric region. A second trench conductive region is in electrical contact with the body region and source region. An electrical contact on the body is in electrical contact with the drain region through the first structural region.

Abstract: A semiconductor device for flame detection, including: a semiconductor body having a first conductivity type conductivity, delimited by a front surface and forming a cathode region; an anode region having a second conductivity type conductivity, which extends within the semiconductor body, starting from the front surface, and forms, together with the cathode region, the junction of a photodiode that detect ultraviolet radiation emitted by the flames; a supporting dielectric region; and a sensitive region, which is arranged on the supporting dielectric region and varies its own resistance as a function of the infrared radiation emitted by the flames.

Abstract: A control circuit controls a switch of a switching current converter receiving an input quantity, with a transformer having a primary winding and a sensor element generating a sensing signal correlated to a current in the primary winding. The control circuit has a comparator stage configured to compare a reference signal with a comparison signal correlated to the sensing signal and generate an opening signal for the switch. The comparator stage has a comparator element and a delay-compensation circuit. The delay-compensation circuit is configured to generate a compensation signal correlated to the input quantity and to a propagation delay with respect to the opening signal. The comparator element generates the opening signal with an advance correlated to the input quantity and to the propagation delay.

Abstract: An energy-scavenging interface includes first and second switches connected in series between an input and reference, and third and fourth switches connected in series between the input and an output. A control circuit closes the first and second switches and opens the third switch for a first time interval to store charge in a storage element. A scaled copy of a peak value of the charging current is obtained. The control circuit then opens the first switch and closes the third and fourth switches to generate an output signal as long as the value in current of the output signal is higher than the value of said scaled copy of the peak value.

Abstract: A controller for a multiphase converter comprises a first stage controller for producing a first gate drive signal to turn on a first power transistor of a first boost converter; a delay element configured to produce a delayed signal by delaying the first gate drive signal by half a cycle length; a time difference detection element configured to: output a turn on command based on a zero crossing detection (ZCD) signal indicating that one or more zero current conditions of a second boost converter of the multiphase converter are met and the delayed signal; and a second stage controller configured to assert a second gate drive signal to turn on a second power transistor of the second boost converter based on the turn on command.

Abstract: A testing system for carrying out electrical testing of at least one first through via forms an insulated via structure extending only part way through a substrate of a first body of semiconductor material. The testing system has a first electrical test circuit integrated in the first body and electrically coupled to the insulated via structure. The first electrical test circuit enables detection of at least one electrical parameter of the insulated via structure.

Abstract: A control device for a switching converter having a transformer, with a primary winding receiving an input quantity, a secondary winding providing an output quantity, an auxiliary winding providing a feedback quantity, and a switch element. The control device has a processing module for generating a control signal for switching the switch element on the basis of the feedback quantity in order to regulate the output quantity via alternation of phases of storage and transfer of energy. The processing module controls the end of the transfer phase by comparing the feedback quantity with a comparison threshold. A discrimination circuit generates a signal for discrimination between the presence of a short circuit on the output or the fact that the input quantity is lower than a threshold. The processing module controls the end of the energy-transfer phase also on the basis of the discrimination signal.