Abstract: Cryptographic circuitry masks sensitive data values. The masking includes extracting unique combinations of random mask values from one or more sets of random mask values. Each sensitive data value is masked using a respective unique combination. The unique combinations have a combination class greater than or equal to a determined integer corresponding to a protection-level against side-channel attacks, and a number of unique combinations greater than or equal to a number of the sensitive data values. A number of random mask values in the one or more sets of random mask values is based on the number of unique combinations and the class of the plurality of unique combinations.

Abstract: A process for manufacturing a MEMS pressure sensor having a micromechanical structure envisages: providing a wafer having a substrate of semiconductor material and a top surface; forming a buried cavity entirely contained within the substrate and separated from the top surface by a membrane suspended above the buried cavity; forming a fluidic-communication access for fluidic communication of the membrane with an external environment, set at a pressure the value of which has to be determined; forming, suspended above the membrane, a plate region made of conductive material, separated from the membrane by an empty space; and forming electrical-contact elements for electrical connection of the membrane and of the plate region, which are designed to form the plates of a sensing capacitor, the value of capacitance of which is indicative of the value of pressure to be detected. A corresponding MEMS pressure sensor having the micromechanical structure is moreover described.

Abstract: A method controls a power switch and senses a primary current through a transformer primary winding coupled to the power switch and deactivates the switch responsive to the sensed primary current reaching a current sensed reference. A demagnetization mode is initiated responsive to deactivating the power switch. During this mode a first capacitance is charged with a first charging current to generate the current sensed reference. The first charging current is based on a bias signal. A second capacitance is charged with a second charging current to generate the bias signal. The second charging current is based on a compensation signal. A third charging current generates a comparison signal, the third charging current based on the current sensed reference. The compensation signal is based on a difference between the comparison signal and an internal reference and the power switch activated based on a secondary current in a secondary transformer winding.

Abstract: A circuit can be used in a speaker system. The circuit includes an amplifier with an output configured to be coupled to a speaker. An offset comparator has an input coupled the output of the amplifier and is configured to provide an offset control signal. A digital circuit has a first input coupled to an output of the offset comparator, a second input configured to receive an amplifier control signal, a third input configured to receive a play control signal, and an output configured to provide a forced mute signal that can be used to control the amplifier.

Abstract: A MEMS device includes a platform carried by a frame via elastic connection elements configured to enable rotation of the platform about a first axis. A bearing structure supports the frame through first and second elastic suspension arms configured to enable rotation of the frame about a second axis transverse to the first axis. The first and second elastic suspension arms are anchored to the bearing structure through respective anchorage portions arranged offset with respect to the second axis. A stress sensor formed by first and second sensor elements respectively arranged on the first and second suspension arms is positioned in proximity of the anchorage portions, on a same side of the second axis, in a symmetrical position with respect to the first axis.

Abstract: A semiconductor device includes a leadframe that includes contact pins and a semiconductor die that has protruding connection formations. A flexible support member is disposed between the leadframe and the semiconductor die and supports the semiconductor die. The flexible support member has electrically conductive lines that extend between the leadframe and the semiconductor die. The electrically conductive lines of the flexible support member are electrically coupled with the contact pins of the leadframe and with the connection formations of the semiconductor die.

Abstract: In an HEMT device, a gate region is formed in a wafer having a channel layer, a barrier layer, and a passivation layer, overlying each other. Drain and source electrodes are formed in the wafer, on different sides of the gate region. A dielectric layer is formed over the gate region and over the passivation layer. Selective portions of the dielectric layer are removed by a plurality of etches so as to form one or more cavities between the gate region and the drain electrode. The one or more cavities have a plurality of steps at an increasing distance from the wafer moving from the gate region to the drain electrode. The cavity is then filled with conductive material to form a field plate coupled to the source electrode, extending over the gate region, and having a surface facing the wafer and having a plurality of steps.

Abstract: A substrate includes first and second semiconductor layers doped with opposite conductivity type in contact with each other at a PN junction to form a junction diode. At least one through silicon via structure, formed by a conductive region surrounded laterally by an insulating layer, extends completely through the first semiconductor layer and partially through the second semiconductor layer with a back end embedded in, and in physical and electrical contact with, the second semiconductor layer. A first electrical connection is made to the first through silicon via structure and a second electrical connection is made to the first semiconductor layer. A testing current is applied to and sensed at the first and second electrical connections in order to detect a defect in the at least one through silicon via structure.

Abstract: A pressure sensor device is to be positioned within a material where a mechanical parameter is measured. The pressure sensor device may include an IC having a ring oscillator with an inverter stage having first doped and second doped piezoresistor couples. Each piezoresistor couple may include two piezoresistors arranged orthogonal to one another with a same resistance value. Each piezoresistor couple may have first and second resistance values responsive to pressure. The IC may include an output interface coupled to the ring oscillator and configured to generate a pressure output signal based upon the first and second resistance values and indicative of pressure normal to the IC.

Abstract: An energy harvester circuit operates to harvest energy in battery-less electrical apparatus. The circuit includes a string of capacitors coupled to a circuit input to receive energy to be harvested. A string of transistors are coupled as pumping transistors to respective ones of the capacitors in the string of capacitors. A compensation coupling circuit is coupled between each transistor in the string of pumping transistors and one of a subsequent or a preceding transistor in the string of pumping transistors.

Abstract: In some embodiments, a DFE including: an input terminal configured to receive an input signal carrying a plurality of symbols; an adder circuit coupled to the input terminal of the DFE; a plurality of comparator circuits configured to receive respective threshold signals; a plurality of slicer circuits coupled to respective comparator circuits of the plurality of comparator circuits; and a plurality of multiplier circuits coupled to respective slicer circuits of the plurality of slicer circuits, the plurality of multiplier circuits configured to multiply respective correction coefficients of a plurality of correction coefficients times respective outputs of respective slicer circuits to produce respective multiplication results of a plurality of multiplication results, where: the adder circuit is configured to subtract the plurality of multiplication results from the input signal, and the plurality of correction coefficients are independently adjusted based on a previously received symbol.

Abstract: A circuit includes combinational circuit and sequential circuit elements coupled thereto. The circuit includes a multiplexor coupled to the combinational and sequential circuit elements, and a system register is coupled to the multiplexor. At least one portion of the combinational and sequential circuit elements is configured to selectively switch to operate as a random access memory.

Abstract: The present invention relates to a remote play device for an interactive entertainment system and may include a class D amplifier and at least one motion detection device. The remote play device may also include a processor to adapt sound effects played through the class D amplifier based upon the at least one motion detection device. A battery may also be included powering at least the class D amplifier.

Abstract: A phase shifter, which carries out a ninety-degree phase shift of a sinusoidal input signal having an input frequency, at the same input frequency, envisages: a continuous-time all-pass filter stage, which receives the sinusoidal input signal and generates an output signal phase-shifted by 90° at a phase-shift frequency that is a function of a RC time constant of the all-pass filter stage; and a calibration stage, which is coupled to the all-pass filter stage and generates a calibration signal for the all-pass filter stage, such that the phase-shift frequency is equal to the input frequency of the sinusoidal input signal, irrespective of variations of the value of the input frequency and/or of the RC time constant with respect to a nominal value.

Abstract: A method for manufacturing a HEMT transistor comprising the steps of: providing a wafer comprising a semiconductor body including a heterojunction structure formed by semiconductor materials that include elements of Groups III-V of the Periodic Table, and a dielectric layer on the semiconductor body; etching selective portions of the wafer, thus exposing a portion of the heterojunction structure; forming an interface layer by a surface reconstruction process, of a semiconductor compound formed by elements of Groups III-V of the Periodic Table, in the exposed portion of the heterojunction structure; and forming a gate electrode, including a gate dielectric and a gate conductive region, on said interface layer.

Abstract: The piezoelectric sensor is formed in a semiconductor material chip having a surface defining a plane and integrating a structure for sensing forces acting in the plane. The chip is formed by a substrate defining a cantilever having a first end, constrained to an anchorage portion of the substrate, and a second end, which is free to bend under the action of external forces. The cantilever has first and second longitudinal halves, each carrying a respective strip element of piezoelectric material, which extends parallel to the chip plane.

Abstract: A device for detecting the concentration of biological materials is formed in a body having a plurality of fluidic paths connectable to a multi-microbalance structure carrying a plurality of microbalances, each microbalance having a sensitive portion facing a reaction chamber. The body and the multi-microbalance structure are configured to be mechanically coupled together and each microbalance is configured to be coupled to a respective fluidic path. Each fluidic path includes an inlet, a duct and a liquid waste, each duct being configured to be coupled with a respective reaction chamber. The plurality of fluidic paths and microbalances form at least one first and one second reference cells and one first sample cell.

Abstract: An optoelectronic device may include a package having a component for sending/receiving optical signals along a first direction, and a chip of semiconductor material housed within the package. The chip may have a main surface and a portion exposed on the main surface for sending/receiving the optical signals along a second direction different from the first direction. The optoelectronic device may further include a component for deflecting the optical signals between the first direction and the second direction, the component being mounted on the main surface.

Abstract: A method is for reducing pulse skipping from a characteristic affecting a modulating signal input to an integrator of a pulse width modulation (PWM) modulator, together with a square wave carrier signal for generating a triangular waveform of the PWM modulator. The method may include creating a broad synchronous peak at vertexes of the triangular waveform output by the integrator.

Abstract: A MEMS force sensor has: a substrate; a fixed electrode coupled to the substrate; and a mobile electrode suspended above the substrate at the fixed electrode to define a sensing capacitor, the mobile electrode being designed to undergo deformation due to application of a force to be detected. A dielectric material region is set on the fixed electrode and spaced apart by an air gap from the mobile electrode, in resting conditions. The mobile electrode comes to bear upon the dielectric material region upon application of a minimum detectable value of the force, so that a contact surface between the mobile electrode and the dielectric material region increases, in particular in a substantially linear way, as the force increases.