Abstract: A method and system produce a PWM signal using a comparator having first and second input terminals and an output terminal at which the PWM signal is produced. The method includes powering the comparator with a supply voltage and receiving a modulating signal at the first input terminal. The method creates a carrier signal with a constant frequency and a maximum amplitude equal to the supply voltage. The comparator receives the carrier signal at the second input terminal and compares the carrier signal to the modulating signal, thereby producing the PWM signal at the output terminal. By creating and using a carrier signal with a maximum amplitude equal to the supply voltage, the PWM signal produced by the method is immune from changes in the supply voltage.

Abstract: An integrated device for a switching system is disclosed. The device includes control circuitry for generating at least one switching control signal, reference circuitry for generating at least one reference quantity, a using circuit for using the reference quantity, a circuit for storing the reference quantity, and a switch which, in a first operative condition, connects the reference circuit to the using circuit and to the storage circuit in order to apply the reference quantity thereto. In a second operative condition, the switch disconnects the reference circuit from the using circuit and connects the storage circuit to the using circuit in order to apply the stored reference quantity thereto. Finally, the device includes filtering circuitry for keeping the switch in the second operative condition for a filtering period in accordance with the switching of the control signal.

Abstract: A multiplier circuit multiplies together both natural and two's complement binary numbers, which it receives in the form of electric signals having predetermined logic values, that are applied to input terminals of logic gating circuits. The logic gating circuits provide partial products of the bits of the two binary factors, and a combinatorial network provides the final sum of the partial products. The partial multiplications that include at least one of the more significant bits of the operands are performed by logic gating circuits which can be enabled to also carry out a two's complement partial multiplication. The multiplier circuit further includes additional logic gating circuits which supply the combinatorial network with additive constants with predetermined logic values unrelated to the factors.

Abstract: A temperature-compensated high-speed timing circuit, which is particularly advantageous in read-interface circuits for disk-drive interface. The voltage on the integrating capacitor is compared against a voltage defined by the drop, on a resistor, induced by a current which is the combination of a reference current from a reference current generator with a temperature-dependent current from another current generator.

Abstract: An electrostatic discharge protection circuit for integration into an integrated circuit device. The protection circuit includes at least one transistor having a first terminal connected to an input or output terminal of the integrated circuit device, a second terminal connected to a supply line for the integrated circuit device, and a control terminal connected to ground. In a preferred embodiment, the transistor is formed by a structure that includes a substrate of a first conductivity type, a first region of a second conductivity type, a second region of the first conductivity type, a third region of the first conductivity type, and a fourth region of the second conductivity type. The third region has greater conductivity than the substrate and the fourth region has greater conductivity than the first region.

Abstract: The present invention relates to a voltage converting circuit adapted to being supplied by at least two rectified A.C. voltages of different levels, including at least two capacitors and a switching circuit to organize a parallel discharge of the capacitors, and to organize a series or parallel charge of the capacitors according to a supply voltage level.

Abstract: The invention relates to a process for making a lateral PNP bipolar electronic device integrated monolithically on a semiconductor substrate together with other bipolar devices of the NPN type, said device being incorporated to an electrically insulated multilayer structure. The device includes a semiconductor substrate doped with impurities of the P type; a first buried layer doped with impurities of the N type to form a base region; and a second layer, overlying the first and having conductivity of the N type, to form an active area with opposite collector and emitter regions being formed in said active area and separated by a base channel region. The width of the base channel region is defined essentially by a contact opening formed above an oxide layer deposited over the base channel region. Advantageously, the contact opening is formed by shifting an emitter mask.

Abstract: A memory device has an array of memory cells, including at least one memory block including multiple-level memory cells adapted for storing each one N.gtoreq.2 bits of information. The at least one memory block also includes electrically erasable and programmable bilevel memory cells, each for storing one bit of information. A circuit is provided for either accessing and reading one of said multiple-level memory cell or simultaneously accessing and reading N of said electrically erasable and programmable bilevel memory cells, depending on address signals supplied to the memory device.

Abstract: A .SIGMA..DELTA. digital/analog converter includes a signal reconstructing multirate low pass filter realized as a switched capacitor fully differential, double sampled structure. The input stage of the filter employs only two sampling capacitors, switched alternately on the two inputs of the stage. The input stage further includes two delay circuits (z.sup.-1) in the feed line of the bitstream towards one of the two inputs of the multistage SC filter. The zeroes introduced in the transfer function reduce the noise energy in the vicinity of frequencies f.sub.s /2.sup.n, preserving the SNR even with a relatively large mismatch between the capacitors.

Abstract: Embodiments of the invention provide a transconductance control circuit, particularly for a continuous-time filter, comprising a transconductor across which a constant voltage is input. The transconductor is connected to a digital-to-analog converter (DAC) to set a reference current. A feedback loop is provided between an output of the transconductor and an input. In particular, the circuit further comprises a means for mirroring the reference current set by the DAC both to the feedback loop and to at least one cell of a cascade-connected filter.

Abstract: An integrated circuit including two phase-locked loops each with its own oscillator. To prevent locking owing to injection between the two oscillators due to stray currents in the integrated circuit, a noise generator is coupled to the oscillator of one of the loops and a timer is provided for activating the noise generator in a manner such that the noise generated changes the frequency of the oscillator randomly when the other loop is in operation.

Abstract: A method is for driving a multiphase brushless motor with N windings connected in a star or in a polygonal configuration. The windings are driven according to a certain periodic voltage profile. The method includes cyclically keeping for a certain time interval at least one of the N windings in a fixed state of low or high saturation and applying to the other phase windings instantaneous voltages according to a predefined different periodic voltage profile such that the resultant voltages on the windings are coherent with the certain periodic voltage profile. The number of intervals, in an entire electrical period, in which the fixed high or low saturation state of one winding is produced, depends on the predefined driving profile and upon the number N of windings of the motor.

Abstract: An integrated amplifier includes a differential input stage including a first pair of bipolar junction transistors. A reference bias current generator biases the differential input stage with a reference bias current. A first and a second current mirror circuit drives a respective transistor of the first pair of bipolar junction transistors. Each of the first and second current mirror circuits includes a transistor having a base terminal connected to an intermediate node. An integrated resistor is connected to the intermediate node and is in series with the respective transistor of the first pair of bipolar junction transistors. The reference bias current of the differential input stage conducts through the integrated resistor. The reference bias current corresponds to a ratio between a base emitter junction voltage and a resistance of the integrated resistor.

Abstract: An electromagnetic head for a storage device comprises a magnetic core forming a magnetic circuit, and a magnetoresistive means. The magnetic core is interrupted by an air-gap, thereby separating a first pole and second pole of the magnetic core. The magnetoresistive means is disposed in the region of the air-gap, and is connected to the magnetic core so as to be connected in the magnetic circuit.

Abstract: A shielded electrical connection of the integrated type comprises a connection element and a shielding element. The connection element includes a first substantially planar structure of a first conducting material and is placed vertically above and isolated from a semiconductor substrate and which occupies a first flat region. The shielding element includes a second substantially planar structure of a second conducting material and is placed vertically between the first structure and the substrate and which occupies a second flat region. A third substantially planar structure made of a third conducting material is placed vertically above the first structure and which occupies a third flat region. The first region does not extend outside the second and third regions. Furthermore, the second and third structures are connected electrically together and to a reference of potential and are electrically insulated from the first structure and the substrate.

Abstract: A device generates pulses of high-precision with programmable duration. The device includes first, second and third pulse generator circuits. The first pulse generator circuit receives at an input a pulse generation command signal, and provides at an output a first pulse for loading the contents of a register in a counter. The second pulse generator circuit is triggered by the first pulse provided by the first pulse generator circuit. The third pulse generator circuit is triggered by a second pulse provided by the second pulse generator circuit, and generates a third pulse to restart the second pulse generator circuit. The second pulse provided by the second pulse generator circuit forms a clock signal for the counter to produce a decrement in the counter. The output signal from the counter is the pulsed signal to be generated. The duration of the pulsed signal is determined by the content of the counter.

Abstract: A first current generator which generates a current that is based on the threshold difference of enhancement-type and native-type transistors therein. A second current generator which generates a current that is based on the thermal voltage. The currents generated by the first and second current generators are linearly combined to produce a highly temperature-stable current.

Abstract: A negative charge pump circuit comprises a plurality of charge pump stages connected in series to each other. Each stage has a stage input terminal and a stage output terminal. A first stage has the stage input terminal connected to a reference voltage, a final stage has the stage output terminal operatively connected to an output terminal of the charge pump at which a negative voltage is developed; intermediate stages have the respective stage input terminal connected to the stage output terminal of a preceding stage and the respective stage output terminal connected to the stage input terminal of a following stage.

Abstract: A voltage regulator providing smooth variation of an absorbed current having a first capacitor parallel-connected to a load, which is in turn connected to a supply voltage; a transconductor coupled between the supply voltage and the load and whose output voltage supplies the load; a differential amplifier coupled between the output of the transconductor and the supply voltage, and further coupled to the input of the transconductor, a second capacitor coupled between the supply voltage and the input of the transconductor; and a pair of diodes coupled between the output of the transconductor and the first capacitor and configured to introduce a zero in the transfer function of the voltage regulator that is suitable to compensate for a pole generated by the first capacitor.

Abstract: Self-aligned etching process for providing a plurality of mutually parallel word lines in a first conducting layer deposited over a planarized architecture obtained starting from a semiconductor substrate on which is provided a plurality of active elements extending along separate parallel lines e.g., memory cell bit lines and comprising gate regions made up of a first conducting layer, an intermediate dielectric layer and a second conducting layer with said regions being insulated from each other by insulation regions to form said architecture with said word lines being defined photolithographically by protective strips implemented by means of: a vertical profile etching for complete removal from the unprotected areas of the first conducting layer of the second conducting layer and of the intermediate dielectric layer respectively, and a following isotropic etching of the first conducting layer.