Abstract: Generally described, one or more embodiments are directed to semiconductor packages comprising a plurality of leads and methods of forming same. The plurality of leads include active leads that are electrically coupled to bond pads of a semiconductor die and thereby coupled to active components of the semiconductor die, and inactive leads that are not electrically coupled to bond pads of the semiconductor die. The active leads have surfaces that are exposed at a lower surface of the semiconductor package and forms lands, while the inactive leads are not exposed at the lower surface of the package.

Abstract: A method of forming a solder connection includes forming a solder mask on a thermal pad of a printed circuit board. The solder mask leaves unmasked portions of the thermal pad and forming the solder mask includes forming a plurality of mask stripes extending from edges of each unmasked portion towards a center of the unmasked portion. The method includes depositing solder paste on the unmasked portions of the thermal pad and placing an exposed thermal pad of an integrated circuit package on the solder paste deposited on the thermal pad of the printed circuit board. The method includes forming a solder connection by heating the solder paste between the unmasked portions of the thermal pad on the printed circuit board and the exposed thermal pad of the integrated circuit package.

Abstract: A blind opening is formed in a bottom surface of a semiconductor substrate to define a thin membrane suspended from a substrate frame. The thin membrane has a topside surface and a bottomside surface. A stress structure is mounted to one of the topside surface or bottomside surface of the thin membrane. The stress structure induces a bending of the thin membrane which defines a normal state for the thin membrane. Piezoresistors are supported by the thin membrane. In response to an applied pressure, the thin membrane is bent away from the normal state and a change in resistance of the piezoresistors is indicative of the applied pressure.

Abstract: A motor controller generates first and second signals indicative of a motor back electromotive force (back emf) based on motor drive signals. The controller compares the first and second signals and detects a motor locked-rotor condition based on the comparison. The control circuitry may include a state observer, which, in operation, maintains a set of state variables based on the received signals, wherein the first signal indicative of the motor back emf is generated based on variables of the set of state variables. The controller may include a phase-locked-loop coupled to the state observer, wherein the phase-locked-loop, in operation, estimates a motor speed based on the variables of the set of state variables, wherein the second signal indicative of the motor back emf is generated based on the estimated motor speed. The motor may be a PMSM motor.

Abstract: A time of flight range detection device includes a laser configured to transmit an optical pulse into an image scene, a return single-photon avalanche diode (SPAD) array, a reference SPAD array, a range detection circuit coupled to the return SPAD array and the reference SPAD array, and a laser driver circuit. The range detection circuit in operation determines a distance to an object based on signals from the return SPAD array and the reference SPAD array. The laser driver circuit in operation varies an output power level of the laser in response to the determined distance to the object.

Abstract: Methods and structures for forming highly-doped, ultrathin layers for transistors formed in semiconductor-on-insulator substrates are described. High dopant concentrations may be achieved in ultrathin semiconductor layers to improve device characteristics. Ion implantation at elevated temperatures may mitigate defect formation for stoichiometric dopant concentrations up to about 30%. In-plane stressors may be formed adjacent to channels of transistors formed in ultrathin semiconductor layers.

Abstract: The disclosure relates to an optoelectronic device comprising in a stack: one reflection polarizing filter, one phase-shifting element configured to add a ?/4 phase shift in polarization, one active region, one reflector, so that the light radiation rays reflected by the reflector and passing through the phase-shifting element exhibit a new polarization phase-shifted by ?/2 with respect to their initial polarization, the rays then being reflected anew by the polarizing filter in the direction of the active region.

Abstract: A vertical semiconductor triode includes a first layer of semiconductor material, the first layer including first and second surfaces, the first surface being in contact with a first electrode forming a Schottky contact.

Abstract: A MEMS tri-axial accelerometer is provided with a sensing structure having: a single inertial mass, with a main extension in a horizontal plane defined by a first horizontal axis and a second horizontal axis and internally defining a first window that traverses it throughout a thickness thereof along a vertical axis orthogonal to the horizontal plane; and a suspension structure, arranged within the window for elastically coupling the inertial mass to a single anchorage element, which is fixed with respect to a substrate and arranged within the window, so that the inertial mass is suspended above the substrate and is able to carry out, by the inertial effect, a first sensing movement, a second sensing movement, and a third sensing movement in respective sensing directions parallel to the first, second, and third horizontal axes following upon detection of a respective acceleration component.

Abstract: Provided is an analog to digital converter configured to receive a continuous input signal. The analog to digital converter includes an integrating block, comprising at least an integrating stage, which output is coupled to a flash analog to digital converter. The analog to digital converter apparatus includes a feedback path coupled to the output of said flash analog to digital converter. The feedback path includes at least a digital to analog conversion block which output is compared at least to the input signal to obtain an error signal which is brought as input to said integrating block. A control block is configured to perform control comprising at least a digital integration, is coupled between the output of said flash analog to digital converter and said feedback path.

Abstract: System, method, and circuitry for utilizing sequential input inertial sensor data to calculate recursive features for training a machine learning algorithm or for classifying the data as a known class. The recursive feature values of a current data sample are calculating based on comparisons between the current data sample value and previous recursive feature values. The recursive features include a recursive maximum, recursive minimum, recursive peak to peak, recursive average, recursive root mean square, and recursive variance.

Abstract: The vertical-conduction electronic power device is formed by a body of wide band gap semiconductor which has a first conductivity type and has a surface, and is formed by a drift region and by a plurality of surface portions delimited by the surface. The electronic device is further formed by a plurality of first implanted regions having a second conductivity type, which extend into the drift region from the surface, and by a plurality of metal portions, which are arranged on the surface. Each metal portion is in Schottky contact with a respective surface portion of the plurality of surface portions so as to form a plurality of Schottky diodes formed by first Schottky diodes and second Schottky diodes, wherein the first Schottky diodes have, at equilibrium, a Schottky barrier having a height different from that of the second Schottky diodes.

Abstract: A process for manufacturing a combined microelectromechanical device includes forming, in a die of semiconductor material, at least a first and a second microelectromechanical structure, performing a first bonding phase to bond a cap to the die via a bonding region or adhesive to define at least a first and a second cavity at the first and, respectively, second microelectromechanical structures, the cavities being at a controlled pressure, forming an access channel through the cap in fluidic communication with the first cavity to control the pressure value inside the first cavity in a distinct manner with respect to a respective pressure value inside the second cavity, and performing a second bonding phase, after which the bonding region deforms to hermetically close the first cavity with respect to the access channel.

Abstract: The device has a first support element forming a first thermal dissipation surface and carrying a first power component; a second support element forming a second thermal dissipation surface and carrying a second power component, a first contacting element superimposed to the first power component; a second contacting element superimposed to the second power component; a plurality of leads electrically coupled with the power components through the first and/or the second support elements; and a thermally conductive body arranged between the first and the second contacting elements. The first and the second support elements and the first and the second contacting elements are formed by electrically insulating and thermally conductive multilayers.

Abstract: Systems and devices are provided to enable granular control over a retention or active state of each of a plurality of memory circuits, such as a plurality of memory cell arrays, within a memory. Each respective memory array of the plurality of memory arrays is coupled to a respective ballast driver and a respective active memory signal switch for the respective memory array. One or more voltage regulators are coupled to a ballast driver gate node and to a bias node of at least one of the respective memory arrays. In operation, the respective active memory signal switch for a respective memory array causes the respective memory array to transition between an active state for the respective memory array and a retention state for the respective memory array.

Abstract: A circuit includes an electronic switch configured to be coupled intermediate a high-voltage node and low-voltage circuitry and configured to couple the low-voltage circuitry to the high-voltage node. A voltage-sensing node is configured to be coupled to the high-voltage node via a pull-up resistor. A further electronic switch can be switched to a conductive state to couple the voltage-sensing node and the control node of the electronic switch. A comparator compares a threshold with a voltage at the voltage-sensing node and causes the further electronic switch to switch on in response to the voltage at said voltage-sensing node reaching said threshold. A charge pump coupled to the current flow-path of the electronic switch is activated to the conductive state to pump electric charge from the current flow-path of the electronic switch to the control node of the electronic switch via the further electronic switch switched to the conductive state.

Abstract: A microelectromechanical gyroscope includes: the support structure; a sensing mass, coupled to the support structure with degrees of freedom along a driving direction and a sensing direction perpendicular to each other; and a calibration structure facing the sensing mass and separated from the sensing mass by a gap having an average width, the calibration structure being movable with respect to the sensing mass so that displacements of the calibration structure cause variations in the average width of the gap. A calibration actuator controls a relative position of the calibration structure with respect to the sensing mass and the average width of the gap.

Abstract: In one aspect, the NFC device includes an antenna that includes first and second terminals, a first resistor on a first current path, and a second resistor on a second current path. The NFC device includes a first switch that switches between open and closed states, where the first switch couples the first current path to the first terminal in the closed state. The NFC device includes a second switch that switches between open and closed states, where the second switch couples the second current path to the second terminal in the closed state. The NFC device includes a controller in communication with the first and second switches and configured to set a Q factor of the antenna to a first or second value by operating the first and second switches.

Abstract: A recognition system for recognition of a gesture of bringing an electronic device, of a mobile or wearable type, to a user's ear, designed to be integrated in the electronic device and having: a movement sensor, configured to provide a movement signal indicative of the movement of the electronic device; an electrostatic charge variation sensor, configured to provide a charge variation signal associated with the movement; a processing module, operatively coupled to the movement sensor and to the electrostatic charge variation sensor and configured to perform a joint processing of the movement signal and the charge variation signal for the recognition of the gesture.

Abstract: System, method, and circuitry for generating content for a programmable computing device based on user-selected configuration information. A settings registry is generated based on the user's selections. The settings registry and the user selected configuration information is utilized to generate the content, such as code, data, parameters, settings, etc. When the content is provided to the programmable computing device, the content initializes, configures, or controls one or more software and hardware aspects of the programmable computing device, such as boot sequence configurations, internal peripheral configurations, states of the programmable computing device, transitions between states of the programmable computing device, etc., and various combinations thereof.