Abstract: A microfluidic dispenser device of inhalable substances includes a casing, housed in which are a driving circuit and a microfluidic cartridge having a tank that contains a liquid to be delivered. The microfluidic cartridge is provided with at least one nebulizer controlled by the driving device. The nebulizer includes: a substrate; a plurality of chambers formed on the substrate and fluidically coupled to the tank for receiving the liquid to be delivered; and a plurality of heaters, which are formed on the substrate in positions corresponding to respective chambers, are thermally coupled to the respective chambers and are separated from the respective chambers by an insulating layer, and are controlled by the driving device. Each chamber is fluidically connected with the outside by at least one respective nozzle.

Abstract: The present disclosure is directed to leadless semiconductor packages with improved wettable flanks that encourage the formation of solder fillets when the leadless semiconductor package is mounted to a substrate. The solder fillets are consistently formed and are easily detectable by inspection systems, such as automated optical inspection (AOI) systems.

Abstract: The present disclosure relates to a method for powering an electronic device. The electronic device includes at least one universal integrated circuit card or at least one secure element; at least one power supply circuit for said card or secure element; and at least one near field communication module. When the near field communication module changes from a standby or inactive state to an active state, the following successive operations are performed: —the components and circuits of said electronic device are started; —programs of the electronic device and said secure card or element are started at the same time.

Abstract: A PMUT device includes a membrane element extending perpendicularly to a first direction and configured to generate and receive ultrasonic waves by oscillating about an equilibrium position. At least two piezoelectric elements are included, with each one located over the membrane element along the first direction and configured to cause the membrane element to oscillate when electric signals are applied to the piezoelectric element, and generate electric signals in response to oscillations of the membrane element. The membrane element has a lobed shape along a plane perpendicular to the first direction, with the lobed shape including at least two lobes. The membrane element includes for each piezoelectric member a corresponding membrane portion including a corresponding lobe, with each piezoelectric member being located over its corresponding membrane portion.

Abstract: Packaged device having a carrying base; an accommodation cavity in the carrying base; a semiconductor die in the accommodation cavity, the semiconductor die having die pads; a protective layer, covering the semiconductor die and the carrying base; first vias in the protective layer, at the die pads; and connection terminals of conductive material. The connection terminals have first connection portions in the first vias, in electrical contact with the die pads, and second connection portions, extending on the protective layer, along a side surface of the packaged device.

Abstract: A method for manufacturing a SiC-based electronic device, comprising the steps of: implanting, on a front side of a solid body made of SiC having a conductivity of an N type, dopant species of a P type thus forming an implanted region, which extends in the solid body starting from the front side and has a top surface coplanar with the front side; and generating a laser beam directed towards the implanted region in order to generate heating of the implanted region to temperatures comprised between 1500° C. and 2600° C. so as to form a carbon-rich electrical-contact region at the implanted region. The carbon-rich electrical-contact region forms an ohmic contact.

Abstract: The present disclosure relates to a cryptographic method comprising: multiplying a point belonging to a mathematical set with a group structure by a scalar by performing: the division of a scalar into a plurality of groups formed of a same number w of digits, w being greater than or equal to 2; and the execution, by a cryptographic circuit and for each group of digits, of a sequence of operations on point, the sequence of operations being identical for each group of digits, at least one of the operations executed for each of the groups of digits being a dummy operation.

Abstract: An enhancement-mode high-electron-mobility transistor comprises a structure including a stack made of III-V semiconductor materials defining an interface and capable of forming a conduction layer in the form of a two-dimensional electron gas layer; a source electrode and a drain electrode forming an electrical contact with the conduction layer; and a gate electrode arranged on top of the structure, between the source electrode and the drain electrode. The structure comprises a bar that is arranged below the gate electrode and passes through the interface of the stack. The bar comprises two semiconductor portions exhibiting opposite types of doping, defining a p-n junction in proximity to the interface.

Abstract: A vertical-conduction MOSFET device formed in a body of silicon carbide having a first and a second face and a peripheral zone. A drain region, of a first conductivity type, extends in the body between the two faces. A body region, of a second conductivity type, extends in the body from the first face, and a source region, having the first conductivity type, extends to the inside of the body region from the first face of the body. An insulated gate region extends on the first face of the body and comprises a gate conductive region. An annular connection region, of conductive material, is formed within a surface edge structure extending on the first face of the body, in the peripheral zone. The gate conductive region and the annular connection region are formed by a silicon layer and by a metal silicide layer overlying the silicon layer.

Abstract: An embodiment level converter circuit is configured to receive, as a current supply, a current proportional to temperature.

Abstract: The present disclosure is directed to a device with enhanced human activity recognition. The device detects a human activity using one more motion sensors, and enhances the detected human activity depending on whether the device is in an indoor environment or an outdoor environment. The device utilizes one or more electrostatic charge sensors to determine whether the device is in an indoor environment or an outdoor environment.

Abstract: A probe device includes an optical device including at least one of a photodetector or a first light source. A cover structure is included and is arranged in front of the optical device. The cover structure includes an electrode which contacts, in use, a body tissue.

Abstract: An embodiment system for protecting a memory comprises security software configured to determine, from an exception generated during an unauthorized action attempt in the memory, whether the security software can perform the action.

Abstract: An electronic device includes a sensor unit. The sensor unit includes a sensor and low power, low area sensor processing unit. The sensor processing unit performs an unsupervised machine learning processes to learn to recognize an activity or motion of the user or device. The user can request to learn the new activity. The sensor processing unit can request that the user remain stationary for a selected period of time before performing the activity. The sensor processing unit records sensor data while the user performs the activity and generates an activity template from the sensor data. The sensor processing can then infer when the user is performing the activity by comparing sensor signals to the activity template.

Abstract: A MOS transistor, in particular a vertical channel transistor, includes a semiconductor body housing a body region, a source region, a drain electrode and gate electrodes. The gate electrodes extend in corresponding recesses which are symmetrical with respect to an axis of symmetry of the semiconductor body. The transistor also has spacers which are also symmetrical with respect to the axis of symmetry. A source electrode extends in electrical contact with the source region at a surface portion of the semiconductor body surrounded by the spacers and is in particular adjacent to the spacers. During manufacture the spacers are used to form in an auto-aligning way the source electrode which is symmetrical with respect to the axis of symmetry and equidistant from the gate electrodes.

Abstract: A method for manufacturing electronic chips includes depositing, on a side of an upper face of a semiconductor substrate, in and on which a plurality of integrated circuits has been formed, a protective resin. The method includes forming, in the protective resin, at least one cavity per integrated circuit, in contact with an upper face of the integrated circuit. Metal connection pillars are formed by filling the cavities with metal. The integrated circuits are separated into individual chips by cutting the protective resin along cut lines extending between the metal connection pillars.

Abstract: A method of operating a display includes performing a non-synchronized touch scan pattern on a display with a controller coupled to the display. The non-synchronized touch scan pattern schedules touch scans independent of a refresh rate of the display. Upon the controller detecting a first synchronization pulse from a display controller coupled to the controller and the display, a first pulse-checking timer is started. Upon detecting a second synchronization pulse from the display controller and before the first pulse-checking timer expires, a first display refresh rate for the display is obtained from an interval between the first synchronization pulse and the second synchronization pulse. A synchronized touch scan pattern is performed with the controller, and is scheduled to avoid touch scans coinciding with refreshes of the display performed at the first display refresh rate.

Abstract: The present disclosure concerns a switching device comprising a first phosphorus-doped silicon layer on top of and in contact with a second arsenic-doped silicon layer. The present disclosure also concerns a method of making a switching device that includes forming a phosphorus-doped silicon layer in an arsenic-doped silicon layer.

Abstract: A power device for surface mounting has a leadframe including a die-attach support and at least one first lead and one second lead. A die, of semiconductor material, is bonded to the die-attach support, and a package, of insulating material and parallelepipedal shape, surrounds the die and at least in part the die-attach support and has a package height. The first and second leads have outer portions extending outside the package, from two opposite lateral surfaces of the package. The outer portions of the leads have lead heights greater than the package height, extend throughout the height of the package, and have respective portions projecting from the first base.

Abstract: The present disclosure is directed to embodiments of optical sensor packages. For example, at least one embodiment of an optical sensor package includes a light-emitting die, a light-receiving die, and an interconnect substrate within a first resin. A first transparent portion is positioned on the light-emitting die and the interconnect substrate, and a second transparent portion is positioned on the light-receiving die and the interconnect substrate. A second resin is on the first resin, the interconnect substrate, and the first and second transparent portions, respectively. The second resin partially covers respective surfaces of the first and second transparent portions, respectively, such that the respective surfaces are exposed from the second resin.