Abstract: A sensor includes detection circuitry and control circuitry coupled to the detection circuitry. The detection circuitry generates a detection signal indicative of a detected physical quantity. The control circuitry, in operation receives the detection signal and a frequency-indication signal, and generates a trigger signal based on the frequency-indication signal and a set of local reference signals. The sensor generates a digital output signal and a locking signal based on the trigger signal and the detection signal. The generating the digital output signal includes outputting a sample of the digital output signal based on the trigger signal. The locking signal is temporally aligned with the digital output signal.
Abstract: A level-shifter circuit receives one or more input signals in an input level domain and includes provides at an output node an output signal in an output level domain shifted with respect to the input level domain. The circuit includes output circuitry including a first drive node and a second drive node that receive first and second logical signals so that the output signal has a first output level or a second output level in the output level domain as a function of at least one of the first and second logical signals. The circuit includes first and second shift capacitors coupled to the first and second drive nodes as well as capacitor refresh circuitry.
Type:
Grant
Filed:
April 5, 2023
Date of Patent:
January 28, 2025
Assignees:
STMICROELECTRONICS S.r.l., STMICROELECTRONICS (ALPS) SAS
Inventors:
Antonino Conte, Marco Ruta, Michelangelo Pisasale, Thomas Jouanneau
Abstract: An output potential level among two first levels is delivered according to an input level among two second levels. The output potential level is delivered at a first node connecting together first and second transistors electrically in series between two second nodes of application of the first levels. A first DC voltage defining a high limit for the control voltage of the first transistor is delivered by a first voltage generator powered by one of the second nodes. A second DC voltage defining a high limit for the control voltage of the second transistor is delivered by a second voltage generator controlled by a value representative of the first voltage and powered between the second nodes.
Abstract: One or more keys are derived from a master key by executing a plurality of encryption operations. A first encryption operation uses the master key to encrypt a plaintext input having a plurality of bytes. Multiple intermediate encryption operations are performed using a respective intermediate key generated by a previous encryption operation to encrypt respective plaintext inputs having a number of bytes. At least two bytes of a plaintext input have values based on a respective set of bits of a plurality of sets of bits of an initialization vector, wherein individual bits of the respective set of bits are introduced into respective individual bytes of the plaintext input and the respective set of bits has at least two bits and at most a number of bits equal to the number of bytes of the plaintext input.
Abstract: An integrated circuit comprises a memory device including a memory plane having non-volatile memory cells and being non-observable in read mode from outside the memory device, a controller, internal to the memory device, configured to detect the memorized content of the memory plane, and when the memorized content contains locking content, automatically lock any access to the memory plane from outside the memory device, the integrated circuit then being in a locked status, and authorize delivery outside the memory device of at least one sensitive datum stored in the memory plane.
Type:
Grant
Filed:
February 23, 2023
Date of Patent:
January 21, 2025
Assignees:
STMICROELECTRONICS (ROUSSET) SAS, STMICROELECTRONICS INTERNATIONAL N V
Abstract: An electronic device has an input which, in operation, receives an input stream of accelerometer data samples indicative of acceleration values along at least one axis. The devices includes circuitry, coupled to the input. The circuitry, in operation, executes an automatic-learning algorithm on blocks of samples of the input stream of accelerometer data samples to identify, for each block, a corresponding condition-of-user-movement from among a plurality of determined conditions-of-user-movement. The circuitry generates a plurality of streams of samples based on the input stream of accelerometer data samples, and for each condition of movement identified, selects a corresponding stream of samples of the plurality of streams of samples. The circuitry executes a wrist-tilt gesture detection algorithm using samples of the selected stream of the plurality of streams of samples.
Type:
Grant
Filed:
July 12, 2022
Date of Patent:
January 21, 2025
Assignee:
STMICROELECTRONICS S.r.l.
Inventors:
Federico Rizzardini, Lorenzo Bracco, Stefano Paolo Rivolta
Abstract: The disclosure relates to a scan chain circuit comprising cascaded flip-flops having a functional input node and a test input node configured to be selectively coupled to logic circuitry at a clock edge time. A clock line is provided configured to distribute one or more clock signals to the flip-flops in the chain, wherein the flip-flops in the chain have active clock edges applied thereto at respective clock edge times. The chain of flip-flops comprise a set of flip-flops configured to receive an edge inversion signal and to selectively invert their active clock edges in response to the edge inversion signal being asserted.
Abstract: An active flyback converter is transitioned between a plurality of operational states based on a comparison of a control voltage signal to voltage thresholds and a count of a number of consecutive switching cycles during which a clamp switch is kept off. The plurality of operational states includes a run state, an idle state, a first burst state, and a second burst state. Each set of consecutive switching cycles of the first burst state includes a determined number of switching cycles during which signals are generated to turn the power switch on and off and to maintain an off state of the clamp switch, and a switching cycle in a determined position in the set of switching cycles during which signals are sequentially generated to turn the power switch on, turn the power switch off, turn the clamp switch on and turn the clamp switch off.
Type:
Application
Filed:
September 25, 2024
Publication date:
January 16, 2025
Applicant:
STMICROELECTRONICS S.r.l.
Inventors:
Claudio ADRAGNA, Massimiliano GOBBI, Giuseppe BOSISIO
Abstract: Unclonable function circuitry includes a plurality of pairs of phase-change memory cells in a virgin state, and sensing circuitry coupled to the plurality of pairs of phase-change memory cells in the virgin state. The sensing circuitry identifies a subset of the plurality of pairs of phase-change memory cells in the virgin state based on a reliability mask. Signs of differences of effective resistance values of the identified subset of the plurality of pairs of phase-change memory cells in the virgin state are sensed by the sensing circuitry. The sensing circuitry generates a string of bits based on the sensed signs of differences in the effective resistance values of the identified subset of the plurality of pairs of phase-change memory cells in the virgin state. Processing circuitry coupled to the unclonable function circuitry, in operation, executes one or more operations using the generated string of bits.
Type:
Grant
Filed:
January 23, 2023
Date of Patent:
January 14, 2025
Assignees:
STMICROELECTRONICS S.R.L., STMICROELECTRONICS (ROUSSET) SAS
Abstract: The present disclosure is directed to a gas sensor device that detects gases with large molecules (e.g., a gas with a molecular weight between 150 g/mol and 450 g/mol), such as siloxanes. The gas sensor device includes a thin film gas sensor and a bulk film gas sensor. The thin film gas sensor and the bulk film gas sensor each include a semiconductor metal oxide (SMO) film, a heater, and a temperature sensor. The SMO film of the thin film gas sensor is an thin film (e.g., between 90 nanometers and 110 nanometers thick), and the SMO film of the bulk film gas sensor is an thick film (e.g., between 5 micrometers and 20 micrometers thick). The gas sensor device detects gases with large molecules based on a variation between resistances of the SMO thin film and the SMO thick film.
Abstract: Various embodiments provide a device for measuring the flow of fluid inside a tube moved by a peristaltic pump is provided with: a detection electrode arrangement coupled to the tube to detect an electrostatic charge variation originated by the mechanical action of the peristaltic pump on the tube; a signal processing stage, electrically coupled to the detection electrode arrangement to generate an electrical charge variation signal; and a processing unit, coupled to the signal processing stage to receive and process in the frequency domain the electrical charge variation signal to obtain information on the flow of a fluid that flows through the tube based on the analysis of frequency characteristics of the electrical charge variation signal.
Abstract: An electronic device comprising: a semiconductor body of silicon carbide, SiC, having a first and a second face, opposite to one another along a first direction, which presents positive-charge carriers at said first face that form a positive interface charge; a first conduction terminal, which extends at the first face of the semiconductor body; a second conduction terminal, which extends on the second face of the semiconductor body; a channel region in the semiconductor body, configured to house, in use, a flow of electrons between the first conduction terminal and the second conduction terminal; and a trapping layer, of insulating material, which extends in electrical contact with the semiconductor body at said channel region and is designed so as to present electron-trapping states that generate a negative charge such as to balance, at least in part, said positive interface charge.
Type:
Application
Filed:
July 5, 2024
Publication date:
January 9, 2025
Applicant:
STMICROELECTRONICS S.R.L.
Inventors:
Patrick FIORENZA, Fabrizio ROCCAFORTE, Mario Giuseppe SAGGIO
Abstract: A device includes a driver circuit and diagnostic circuitry coupled to the driver circuit. The diagnostic circuitry includes an on-state diagnostic circuit and an off-state diagnostic circuit. The diagnostic circuitry, in operation: generates a configuration signal associated with an operative condition of the driver circuit based on a comparator output of the off-state diagnostic circuit; diagnoses conditions associated with the driver circuit; and controls operation of the on-state diagnostic circuit based on the configuration signal.
Abstract: An integrated circuit includes a reconfigurable stream switch and an arithmetic circuit. The stream switch, in operation, streams data. The arithmetic circuit has a plurality of inputs coupled to the reconfigurable stream switch. In operation, the arithmetic circuit generates an output according to AX+BY+C, where A, B and C are vector or scalar constants, and X and Y are data streams streamed to the arithmetic circuit through the reconfigurable stream switch.
Type:
Grant
Filed:
January 19, 2023
Date of Patent:
January 7, 2025
Assignees:
STMICROELECTRONICS S.r.l., STMICROELECTRONICS INTERNATIONAL N.V.
Inventors:
Surinder Pal Singh, Giuseppe Desoli, Thomas Boesch
Abstract: A semiconductor device having a channel between active sections or portions of the device is disclosed. An elastic material, such as dielectric or a polymer, is deposited into the channel and cured to increase flexibility and thermal expansion properties of the semiconductor device. The elastic material reduces the thermal and mechanical mismatch between the semiconductor device and the substrate to which the semiconductor device is coupled in downstream processing to improve reliability. The semiconductor device may also include a plurality of channels formed transverse with respect to each other. Some of the channels extend all the way through the semiconductor device, while other channels extend only partially through the semiconductor device.
Abstract: Packaged device having a carrying base; an accommodation cavity in the carrying base; a semiconductor die in the accommodation cavity, the semiconductor die having die pads; a protective layer, covering the semiconductor die and the carrying base; first vias in the protective layer, at the die pads; and connection terminals of conductive material. The connection terminals have first connection portions in the first vias, in electrical contact with the die pads, and second connection portions, extending on the protective layer, along a side surface of the packaged device.
Abstract: A MEMS device having a body with a first and a second surface, a first portion and a second portion. The MEMS device further has a cavity extending in the body from the second surface; a deformable portion between the first surface and the cavity; and a piezoelectric actuator arranged on the first surface, on the deformable portion. The deformable portion has a first region with a first thickness and a second region with a second thickness greater than the first thickness. The second region is adjacent to the first region and to the first portion of the body.
Abstract: The present description concerns a converter comprising an AC-DC conversion stage comprising a first thyristor, a first power supply circuit delivering a first reference voltage between a first node and a second node, and a second power supply circuit delivering a second reference voltage between third and fourth nodes, the cathode of the first thyristor being coupled to the first node of the first power supply circuit by a first switch and being connected to the fourth node, the second power supply circuit comprising a first rectifying element coupled to the second node of the first power supply circuit and coupled to the third node.
Abstract: A charge-balance power device includes a semiconductor body having a first conductivity type. A trench gate extends in the semiconductor body from a first surface toward a second surface. A body region has a second conductivity type that is opposite the first conductivity type, and the body region faces the first surface of the semiconductor body and extends on a first side and a second side of the trench gate. Source regions having the first conductivity type extend in the body region and face the first surface of the semiconductor body. A drain terminal extends on the second surface of the semiconductor body. The device further comprises a first and a second columnar region having the second conductivity, which extend in the semiconductor body adjacent to the first and second sides of the trench gate, and the first and second columnar regions are spaced apart from the body region and from the drain terminal.
Type:
Application
Filed:
September 5, 2024
Publication date:
December 26, 2024
Applicant:
STMICROELECTRONICS S.r.l.
Inventors:
Antonello SANTANGELO, Giuseppe LONGO, Lucio RENNA
Abstract: A master device issues memory burst transaction requests via an interconnection bus to fetch data from a slave device. A cipher engine is coupled to the interconnection bus and decrypts the fetched data to produce plaintext data for the master device. The cipher engine selectively operates according to a stream cipher operation mode, or a block cipher operation mode. The cipher engine is configured to stall a read data channel of the interconnection bus between the slave device and the master device in response to the cipher engine switching from the block cipher operation mode to the stream cipher operation mode. The read data channel is reactivated in response to a last beat of a read burst of the plaintext data produced by the cryptographic engine.