Abstract: A microelectromechanical sensor device has a detection structure including: a substrate having a first surface; a mobile structure having an inertial mass suspended above the substrate at a first area of the first surface so as to perform at least one inertial movement with respect to the substrate; and a fixed structure having fixed electrodes suspended above the substrate at the first area and defining with the mobile structure a capacitive coupling to form at least one sensing capacitor. The device further includes a single monolithic mechanical-anchorage structure positioned at a second area of the first surface separate from the first area and coupled to the mobile structure, the fixed structure, and the substrate and connection elements that couple the mobile structure and the fixed structure mechanically to the single mechanical-anchorage structure.

Abstract: The present disclosure is directed to input detection for electronic devices using electrostatic charge sensors. The devices and methods disclosed herein utilize electrostatic charge sensors to detect various touch gestures, such as long and short touches, single/double/triple taps, and swipes; and perform in-ear detection.

Abstract: The present disclosure is directed to a device and method for detection of motion events including towing of the vehicle, jacking of the vehicle, and the vehicle being hit by another object. Processing is split between an MCU and a sensor unit. After the vehicle is turned off and before the MCU enters a sleep mode, the MCU calculates a gravity vector of the vehicle using accelerometer data, calculates threshold values based on the gravity vector, and saves the threshold values. After the MCU enters the sleep mode, the sensor unit subsequently monitors and detects motion events with the saved threshold values.

Abstract: A differential correlator filter includes: a pre-pulse region, where first filter coefficients in the pre-pulse region have negative values; and a pulse region including: a rising edge region adjacent to the pre-pulse region, where second filter coefficients in the rising edge region have positive values; an accumulation region adjacent to the rising edge region, where third filter coefficients of the accumulation region have positive values; and a falling edge region adjacent to the accumulation region, where fourth filter coefficients of the falling edge region have positive values, where the accumulation region is between the rising edge region and the falling edge region. The differential correlator filter further includes a post-pulse region adjacent to the pulse region, where the pulse region is between the pre-pulse region and the post-pulse region, where fifth filter coefficients of the post-pulse region have negative values.

Abstract: A multi-chip package including a first integrated circuit and a second integrated circuit. The first integrated circuit includes a first side having a first conductive layer, a second side having a second conductive layer, and an edge, the first conductive layer coupled to the second conductive layer at a location adjacent to the edge. The second integrated circuit is coupled to the second conductive layer of the first integrated circuit.

Abstract: An active flyback converter is transitioned between a plurality of operational states based on a comparison of a control voltage signal to voltage thresholds and a count of a number of consecutive switching cycles during which a clamp switch is kept off. The plurality of operational states includes a run state, an idle state, a first burst state, and a second burst state. Each set of consecutive switching cycles of the first burst state includes a determined number of switching cycles during which signals are generated to turn the power switch on and off and to maintain an off state of the clamp switch, and a switching cycle in a determined position in the set of switching cycles during which signals are sequentially generated to turn the power switch on, turn the power switch off, turn the clamp switch on and turn the clamp switch off.

Abstract: A semiconductor device includes: a substrate; a transduction microstructure integrated in the substrate; a cap joined to the substrate and having a first face adjacent to the substrate and a second, outer, face; and a channel extending through the cap from the second face to the first face and communicating with the transduction microstructure. A protective membrane made of porous polycrystalline silicon permeable to aeriform substances is set across the channel.

Abstract: In an embodiment, a method includes: providing a voltage setpoint to a voltage converter; generating an output voltage at a voltage rail with the voltage converter based on the voltage setpoint; when the voltage setpoint is transitioning from a first voltage setpoint to a second voltage setpoint that has a lower magnitude than the first voltage setpoint, providing a first constant current to a first node coupled to a control terminal of an output transistor to turn on the output transistor, where the output transistor includes a source terminal coupled to a first terminal of a first resistor, and where a current path of the output transistor is coupled to the voltage rail; and turning off the output transistor after the output voltage reaches the target output voltage corresponding to the second voltage setpoint.

Abstract: A device that provides high impedance contact pads for an electrostatic charge sensor. The contact pads are shared between the electrostatic charge sensor and drivers. The contact pads are set to a high impedance state by reducing current leakage through the drivers. Compared to electrostatic charge sensor with low impedance contact pads, the electrostatic charge sensor disclosed herein has high sensitivity, and is able to detect weak electrostatic fields.

Abstract: An electronic power device includes a substrate of silicon carbide (SiC) having a front surface and a rear surface which lie in a horizontal plane and are opposite to one another along a vertical axis. The substrate includes an active area, provided in which are a number of doped regions, and an edge area, which is not active, distinct from and surrounding the active area. A dielectric region is arranged above the front surface, in at least the edge area. A passivation layer is arranged above the front surface of the substrate, and is in contact with the dielectric region in the edge area. The passivation layer includes at least one anchorage region that extends through the thickness of the dielectric region at the edge area, such as to define a mechanical anchorage for the passivation layer.

Abstract: A method of manufacturing a MOS transistor includes forming a conductive first gate and forming insulating spacers along opposite sides of the gate, wherein the spacers are formed before the gate.

Abstract: An apparatus comprises an array of vertical-cavity surface-emitting lasers. Each of the vertical-cavity surface-emitting lasers is configured to be a source of light. The apparatus also comprises an optical arrangement configured to receive light from a plurality of the vertical-cavity surface-emitting lasers and to output a plurality of light beams.

Abstract: A device for detecting UV radiation, comprising: a SiC substrate having an N doping; a SiC drift layer having an N doping, which extends over the substrate; a cathode terminal; and an anode terminal. The anode terminal comprises: a doped anode region having a P doping, which extends in the drift layer; and an ohmic-contact region including one or more carbon-rich layers, in particular graphene and/or graphite layers, which extends in the doped anode region. The ohmic-contact region is transparent to the UV radiation to be detected.

Abstract: A system-on-chip includes a processor, a memory and a memory interface coupled to the processor and to the memory. The processor, in operation, generates memory access requests. The memory includes one or more physical banks divided into a succession of sectors, each sector having a size equal to a smallest erasable size of the memory. The memory interface, in operation, responds to receiving memory configuration information by storing logical memory bank configuration information in the one or more configuration registers, the logical memory bank configuration information assigning each sector of the one or more physical banks of the memory to a respective logical memory bank of one or more logical memory banks. The memory interface, in operation, controls access to the memory by the processor based on the logical memory bank configuration information stored in the one or more configuration registers.

Abstract: An electronic device capable of determining an eye convergence angle using a magnetometer sensor is provided. The magnetometer sensor is capable of reporting angle readings in three dimensions that is aligned with an eye gaze direction of each eye of a user. The magnetometer which is incorporated into the device can fit into a human eye like a contact lens and determine the angle of the gaze direction of both eyes with respect to an object within a field of view. By obtaining this eye convergence angle for an object, it is possible to accurately detect depth information. The electronic device also functions as a digital contact lens that can automatically adjust the focal point of the object to provide the user with a clear vision. The electronic device also includes a display that provides the user with additional information about the object.

Abstract: Embodiments are directed towards a system on chip (SoC) that implements a deep convolutional network heterogeneous architecture. The SoC includes a system bus, a plurality of addressable memory arrays coupled to the system bus, at least one applications processor core coupled to the system bus, and a configurable accelerator framework coupled to the system bus. The configurable accelerator framework is an image and deep convolutional neural network (DCNN) co-processing system. The SoC also includes a plurality of digital signal processors (DSPs) coupled to the system bus, wherein the plurality of DSPs coordinate functionality with the configurable accelerator framework to execute the DCNN.

Abstract: A back electromotive force (BEMF) of a spindle motor in a hard disk drive is rectified and exploited to drive a voice coil motor (VCM) in the hard disk drive to retract the heads of the hard disk drive to a park position. The VCM is driven in a discontinuous mode comprising an alternation of VCM on-times and VCM off-times. Rectifying the BEMF of the spindle motor is discontinued before the end of the VCM off-times, Toff with the spindle motor brought into a brake condition wherein the spindle motor is short-circuited and the spindle BEMF forces currents through the windings of the spindle motor. The spindle current is thus pre-charged and made ready to cope with a VCM current request at the next VCM on-time.

Abstract: The present disclosure relates to a pixel comprising: a photodiode comprising a portion of a substrate of a semiconductor material, extending vertically from a first face of the substrate to a second face of the substrate configured to receive light; a layer of a first material covering each of the lateral surfaces of the portion; a layer of a second material covering the portion on the side of the first face, first and second material having refractive indexes lower than that of the semiconductor material; and a diffractive structure disposed on a face of the photodiode on the side of the second face.

Abstract: A charge-balance power device includes a semiconductor body having a first conductivity type. A trench gate extends in the semiconductor body from a first surface toward a second surface. A body region has a second conductivity type that is opposite the first conductivity type, and the body region faces the first surface of the semiconductor body and extends on a first side and a second side of the trench gate. Source regions having the first conductivity type extend in the body region and face the first surface of the semiconductor body. A drain terminal extends on the second surface of the semiconductor body. The device further comprises a first and a second columnar region having the second conductivity, which extend in the semiconductor body adjacent to the first and second sides of the trench gate, and the first and second columnar regions are spaced apart from the body region and from the drain terminal.

Abstract: The present disclosure is directed to a voltage regulation circuit receiving as input an input voltage, in particular a DC voltage supply, and outputting a regulated voltage. The voltage regulation circuit includes a voltage reference circuit configured to supply a reference voltage which is independent, in particular with respect to temperature variations. The voltage regulation circuit includes a first circuit branch and a second circuit branch in parallel coupled between the input voltage and ground. The first branch includes a current generator including a first depletion MOSFET transistor, which gate source voltage is a PTAT (Proportional To Absolute Temperature) voltage, coupled between the input voltage and the voltage reference circuit.