Patents Assigned to STMicroelectronics
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Patent number: 12288961Abstract: An electronic device includes a base substrate having a mounting face. An electronic chip is fastened onto the mounting face of the base substrate. A transparent encapsulation structure is bonded onto the base substrate. The transparent encapsulation structure includes a housing with an internal cavity defining a chamber housing the electronic chip. The encapsulation structure has an external face that supports a light-filtering optical wafer located facing an optical element of the electronic chip. An opaque cover covers the transparent encapsulation structure and includes a local opening facing the light-filtering optical wafer.Type: GrantFiled: April 6, 2021Date of Patent: April 29, 2025Assignee: STMicroelectronics (Grenoble 2) SASInventors: Fabien Quercia, Jean-Michel Riviere
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Publication number: 20250133964Abstract: A thermoelectric generator includes a thermoelectric converter and a thermal coupling structure, configured to thermally couple the thermoelectric converter to a first body at a first temperature and to a second body at a second temperature, lower than the first temperature. The thermoelectric converter includes a support body, having a structural layer and a thermal insulation layer, and a plurality of thermopiles arranged on the thermal insulation layer and thermally coupled to the thermal coupling structure. The thermal insulation layer has a thickness such as to thermally insulate the thermopiles from the structural layer and the support body is continuous and without cavities between the thermopiles and a face of the structural layer opposite to the thermopiles.Type: ApplicationFiled: October 15, 2024Publication date: April 24, 2025Applicant: STMicroelectronics International N.V.Inventors: Flavio Francesco VILLA, Francesco FONCELLINO, Marco DEL SARTO
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Publication number: 20250132675Abstract: Provided is voltage regulator circuit including an input node for receiving an input supply voltage, an output node for producing an output regulated voltage, and a switchable pass element arranged between the input and output nodes. A comparator circuit compares the output regulated voltage to a dynamic threshold to produce a control signal to control the switchable pass element. The control signal being asserted results in the switchable pass element being turned on, and vice-versa. A threshold selection and shaping circuit shapes the output regulated voltage or the dynamic threshold so that: (i) in response to assertion of the control signal, the difference between the dynamic threshold and the output regulated voltage is abruptly increased and subsequently gradually decreased towards a target static value, and (ii) in response to de-assertion of the control signal, the difference is abruptly increased and subsequently gradually decreased towards a target static value.Type: ApplicationFiled: October 4, 2024Publication date: April 24, 2025Applicant: STMicroelectronics International N.V.Inventors: Marco Giovanni FONTANA, Romino CRETONE
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Publication number: 20250132690Abstract: The present description concerns a converter comprising an AC-DC conversion stage comprising a first thyristor, a first power supply circuit delivering a first reference voltage between a first node and a second node, and a second power supply circuit delivering a second reference voltage between third and fourth nodes, the cathode of the first thyristor being coupled to the first node of the first power supply circuit by a first switch and being connected to the fourth node, the second power supply circuit comprising a first rectifying element coupled to the second node of the first power supply circuit and coupled to the third node.Type: ApplicationFiled: November 27, 2024Publication date: April 24, 2025Applicant: STMICROELECTRONICS LTDInventor: Laurent GONTHIER
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Publication number: 20250130129Abstract: A pressure sensor has a body having a first chamber and a second chamber hermetically separated from the first chamber; a first detection structure which is arranged in the first chamber, has a first deformable element and a first buried cavity within the first detection structure, wherein the first deformable element is configured to undergo a deformation as a function of a pressure difference between the first chamber and the first buried cavity. The sensor also has a second detection structure which is arranged in the second chamber, has a second deformable element and a second buried cavity within the second detection structure, wherein the second deformable element is configured to undergo a deformation as a function of a pressure difference between the second chamber and the second buried cavity.Type: ApplicationFiled: October 14, 2024Publication date: April 24, 2025Applicant: STMicroelectronics International N.V.Inventors: Filippo DANIELE, Enri DUQI, Lorenzo BALDO
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Publication number: 20250132893Abstract: The present description concerns a method of verification, implemented by an electronic device, of a matrix used for the implementation of a data cipher algorithm comprising, for the generation of the matrix, the use of a first function and of a second function, the verification method comprising a verification using a final portion of the output data of the first function.Type: ApplicationFiled: October 9, 2024Publication date: April 24, 2025Applicant: STMicroelectronics International N.V.Inventors: Pierre-Alexandre BLANC, Benjamin SARTORI
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Publication number: 20250133843Abstract: An avalanche photodiode includes first semiconductor region of a first conductivity type in a semiconductor substrate and a second semiconductor region of a second conductivity type in the semiconductor substrate which forming a PN junction to be reverse-biased. A third semiconductor region of the second conductivity type in the semiconductor substrate is positioned such that the second region is closer to the first region than the third region. A fourth semiconductor region of the second conductivity type in a semiconductor substrate is in contact with the second and third regions. A dopant concentration of the fourth region is less than dopant concentrations of the second and third regions. The fourth region is arranged to at least partially surround the second region, and the third region is arranged to at least partially surround the fourth region.Type: ApplicationFiled: October 16, 2024Publication date: April 24, 2025Applicant: STMicroelectronics International N.V.Inventors: Isobel NICHOLSON, Dominique GOLANSKI, Bastien MAMDY
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Publication number: 20250132596Abstract: A power-management system includes a power transistor coupled between a power supply and load, a driver circuit driving the power transistor in response to an input signal, and an error amplifier generating a control signal that modifies operation of the driver circuit based on a comparison between a selected reference voltage and a drain-to-source voltage of the power transistor. A multiplexer provides the selected reference voltage to the error amplifier and passes one of a plurality of different reference voltages as the selected reference voltage based upon first and second selection signals. A first selection circuit charges a first capacitor in response to the input signal and generates the first selection signal based on a first voltage across the first capacitor. A second selection circuit charges a second capacitor in response to the input signal and generates the second selection signal based on a second voltage across the second capacitor.Type: ApplicationFiled: October 23, 2023Publication date: April 24, 2025Applicant: STMicroelectronics International N.V.Inventors: Domenico RAGONESE, Marco MINIERI, Maurizio GRECO, Vincenzo MARANO, Vojtech ELIAS, Milos HOFMAN
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Patent number: 12282612Abstract: The present disclosure is directed to a three-dimensional interactive display system. The system detects a position of a user (e.g., the user's finger or hand) or an optical emitter device, along three different dimensions. In a case where the system detects a position of a user's finger, the user wears a passive device having angled surfaces on his or her finger to improve detection of the user's finger. In a case where the system detects the optical emitter device, the user holds the optical emitter device or wears the optical emitter device similar to the passive device. The optical emitter device emits light, and the system tracks the optical emitting device by detecting the light emitted by the optical emitter device.Type: GrantFiled: July 31, 2023Date of Patent: April 22, 2025Assignee: STMICROELECTRONICS (RESEARCH & DEVELOPMENT) LIMITEDInventor: Jeff M. Raynor
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Patent number: 12284248Abstract: The present disclosure is directed to a device and method for generating and transmitting a TDM signal including both raw data and processed data. The device includes a sensor having a time division multiplexing (TDM) interface. The TDM interface transmits both raw data and processed data in a single TDM signal by reserving one or more slots inside a TDM frame for transmission of the processed data. The sensor also embeds additional information inside a data stream of raw data by repurposing one or more of values of the raw data as an exception code, flag, or another type of notification. The device is also enabled to transmit data, and disabled when not in use in order to conserve power.Type: GrantFiled: July 27, 2023Date of Patent: April 22, 2025Assignee: STMICROELECTRONICS S.rl.Inventors: Alessandra Maria Rizzo Piazza Roncoroni, Matteo Quartiroli, Paola Baldrighi
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Patent number: 12282589Abstract: An electronic device includes a power supply terminal, a voltage regulator connected to the power supply terminal, an electronic module connected to the voltage regulator, and a compensation circuit configured to receive an auxiliary current generated by the voltage regulator and being equal to a first fraction of the electronic module current. The compensation circuit includes a current source configured to supply a source current to a cold point, and a compensation stage connected to the power supply terminal and being traversed by an intermediate current equal to a difference between the source current and the auxiliary current and by a complementary current equal to the intermediate current multiplied by an inverse multiplication factor of the first fraction.Type: GrantFiled: February 10, 2023Date of Patent: April 22, 2025Assignee: STMicroelectronics (Rousset) SASInventor: Nicolas Demange
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Patent number: 12284480Abstract: The present disclosure is directed to transducer assemblies or device in which one or more buried cavities are present within a substrate and define or form one or more membranes along a surface of the substrate. One or more piezoelectric actuators are formed on the one or more membranes and the one or more piezoelectric actuators drive the membranes at an operating frequency with an operating bandwidth of the transducer assemblies. Each of the one or more membranes is anchored at respective portions to a main body portion of the substrate to provide robust and strong anchoring of each of the one or more membranes to push unwanted flexure modes outside the operating bandwidth of the transducer assemblies.Type: GrantFiled: December 14, 2022Date of Patent: April 22, 2025Assignee: STMicroelectronics International N.V.Inventors: Domenico Giusti, Fabio Quaglia, Marco Ferrera, Carlo Luigi Prelini
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Patent number: 12284279Abstract: The present disclosure relates to a cryptographic method including the execution, by a cryptographic circuit, of an algorithm applied to a scalar in order to generate an output vector, of length L+n, which digits are d0, . . . , dL+n?1, the algorithm comprising iterations i, each iteration i taking an input data value, initially equal to said scalar and an input vector of length c, which digits are d?i, . . . , d?i+c?1, where for each j?{i, . . . , i+c?1}, the digit d?j is such that: d j ? = { d j ? if ? j < L d j - m ? otherwise .Type: GrantFiled: November 4, 2022Date of Patent: April 22, 2025Assignee: STMICROELECTRONICS (ROUSSET) SASInventor: Guilhem Assael
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Publication number: 20250123478Abstract: A system includes a module formed by a first supporting portion, a second supporting portion, a first die carrying a first reflector and housed in the first supporting portion, and a second die carrying a second reflector and housed in the second supporting portion. The first and second supporting portions are spaced apart to define a gap therebetween. The second supporting portion includes an input hole defined therein to receive an incoming beam and direct it toward the first reflector. The first supporting portion includes an output hole defined therein to allow passage of an outgoing beam reflected by the second reflector. The first and second reflectors are configured to sequentially reflect the incoming beam to generate the outgoing beam.Type: ApplicationFiled: December 19, 2024Publication date: April 17, 2025Applicant: STMicroelectronics S.r.l.Inventors: Marco DEL SARTO, Alex GRITTI, Amedeo MAIERNA, Luca MAGGI
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Publication number: 20250125232Abstract: Wettable metalization multilayer formed by an adhesion layer, containing titanium; a barrier layer, containing nickel; and a sintering layer, containing silver. A portion of the sintering layer, facing the barrier layer, contains atoms of a metal material chosen between aluminum and tin. A portion of the barrier layer facing the sintering layer may contain atoms of the metal material. The sintering layer is obtained depositing by PVD and spinning a metal material layer and then a silver layer, causing the diffusion of the atoms of the metal material in the silver layer.Type: ApplicationFiled: October 9, 2024Publication date: April 17, 2025Applicant: STMicroelectronics International N.V.Inventors: Brunella CAFRA, Antonio LANDI, Agata GRASSO, Crocifisso Marco Antonio RENNA
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Publication number: 20250123758Abstract: A memory circuit includes an array of memory cells arranged with first word lines connected to a first sub-array storing less significant bits of data and second word lines connected to a second sub-array storing more significant bits of data. A first word line signal is applied to a selected one of the first word lines to read less significant bits from the first sub-array, and a mathematical operation is performed on the read less significant bits to produce modified less significant bits that are written back to the first sub-array. If the read less significant bits are saturated, a second word line signal is applied to a selected one of the second word lines to read more significant bits from the second sub-array, and a mathematical operation is performed on the read more significant bits to produce modified more significant bits that are written back to the second sub-array.Type: ApplicationFiled: December 19, 2024Publication date: April 17, 2025Applicant: STMicroelectronics International N.V.Inventor: Praveen Kumar VERMA
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Publication number: 20250125228Abstract: A semiconductor die is arranged at a die mounting region at a first surface of a die pad in a substrate. The die pad has a second surface opposite the first surface. Laser beam energy is applied to the second surface of the die pad to form in the second surface of the die pad a recessed peripheral portion surrounding a central portion opposite the die mounting region at the first surface. An encapsulation of electrically insulating material is molded onto the substrate. During molding, the electrically insulating material covers the recessed peripheral portion and leakage of the electrically insulating material over the central portion is countered in response to the peripheral portion of the second surface of the die pad being recessed.Type: ApplicationFiled: October 9, 2024Publication date: April 17, 2025Applicant: STMicroelectronics International N.V.Inventors: Guendalina CATALANO, Alessandro MELLINA GOTTARDO, Alberto ARRIGONI
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Publication number: 20250125804Abstract: A Low Voltage Differential Signaling (LVDS) transmitter includes driver circuit with a first transistor, a second transistor, a third transistor, a fourth transistor, a first resistor, and a second resistor. The first transistor is coupled between a first node and first output. The second transistor is coupled between the first node and a second output. The third transistor is coupled between the first output and a second node. The fourth transistor is coupled between the second output and the second node. The first resistor is coupled between the first output and a common mode node. The second resistor is coupled between the second output and the common mode node. A pre-driver circuit generates gate control signals controlling the first, second, third, and fourth transistors in response to a data signal. A controlled timing delay is applied to the timing of logic state transistors for the control signals.Type: ApplicationFiled: December 19, 2024Publication date: April 17, 2025Applicant: STMicroelectronics International N.V.Inventors: Sandeep KAUSHIK, Paras GARG
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Publication number: 20250126850Abstract: Methods and structures for forming strained-channel finFETs are described. Fin structures for finFETs may be formed in two epitaxial layers that are grown over a bulk substrate. A first thin epitaxial layer may be cut and used to impart strain to an adjacent channel region of the finFET via elastic relaxation. The structures exhibit a preferred design range for increasing induced strain and uniformity of the strain over the fin height.Type: ApplicationFiled: December 23, 2024Publication date: April 17, 2025Applicant: STMicroelectronics, Inc.Inventors: Nicolas LOUBET, Pierre MORIN
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Publication number: 20250123766Abstract: System, method, and circuitry for simulating a memory architecture to generate a bin image of a file tree for a memory embedded on a programmable computing device. A memory configuration of the memory and a file tree identifying a file structure to be used in the memory are obtained. A bin image of a file system for the memory is generated based on the memory configuration and the file tree using a memory simulator and a file-management-system manager. The bin image is provided to the programmable computing device for storage in the memory.Type: ApplicationFiled: December 19, 2024Publication date: April 17, 2025Applicant: STMicroelectronics FranceInventors: Zouhaier AOUAINI, Haithem RAHMANI