Abstract: Provided is a measuring device for measuring a distance between the measuring device and a user. The measuring device includes a distance sensor configured to generate a distance signal indicative of the distance, an IR radiation sensor configured to generate a temperature signal indicative of the IR radiation emitted by the user, and a control unit. The control unit is configured to: in a calibration mode, acquire the distance signal and the temperature signal respectively through the distance sensor and the IR radiation sensor and, on the basis of the distance signal and the temperature signal, generate a calibration curve which associates to each other values of the temperature signal with respective value of the distance; and in a calibrated mode, acquire the temperature signal through the IR radiation sensor and, on the basis of the temperature signal and the calibration curve, determine the distance.

Abstract: A bandgap voltage generator circuit is formed using only bipolar transistors. The bandgap voltage generator circuit includes an output node at which a bandgap reference voltage is generated. A transconductance amplifier circuit in a current control feedback loop has a differential input which receives a base current. A compensation current sink circuit operates to sink a compensation current from the output node corresponding to the base current received at the differential input of the transconductance amplifier.

Abstract: A bandgap voltage generator circuit is formed using only bipolar transistors. The bandgap voltage generator circuit includes output nodes generating first and second bandgap reference currents. A transconductance amplifier circuit in a current control feedback loop of the bandgap voltage generator circuit has differential inputs which receive base currents. A differential amplifier circuit has inputs configured to receive the first and second bandgap reference currents and includes a compensation current sink circuit configured to sink compensation currents from the first and second bandgap reference currents which correspond to the base current received at the differential inputs of the transconductance amplifier circuit.

Abstract: A device of contactless communication by active load modulation includes a receive circuit configured to receive as an input a reception signal originating from a magnetic field intended to be received by an antenna. A transmit circuit has an output coupled to the antenna with a modulation signal in phase with the reception signal intended to be delivered thereon. A circuit compensates for a delay of the modulation signal due to the transmit circuit and to the amplitude of the reception signal. The compensation circuit determines a phase-shift value to be applied to an input signal of the transmit circuit to compensate for the delay.

Abstract: An integrated system for electric-current monitoring includes a package and a MEMS sensor device arranged inside the package to provide an output electrical signal indicative of the electric current to be monitored. A sensing coil is provided within the package. The electric current to be monitored flows through the sensing coil. The MEMS sensor device is arranged relative to the sensing coil so as to be affected by flux lines of a magnetic field generated as a whole by the sensing coil as a function of the electric current to be monitored.

Abstract: A transistor device comprising a silicon-on-insulator (SOI) substrate having a plurality of polysilicon gates including a plurality of recessed gates and a plurality of non-recessed gates. The plurality of recessed gates being recessed in a top silicon layer of the SOI substrate and the plurality of non-recessed gates being on the top silicon layer. The plurality of recessed gates comprising an upper cap portion on a bottom buried portion that is in a recess of the SOI substrate. Methods of manufacturing the device are provided.

Abstract: A circuit detects zero crosses in an input-signal and includes a low-pass-filter (LPF) receiving the input-signal and introducing a phase-shift dependent on the frequency thereof. Filter circuitry receives the output of the LPF, applies a fixed phase-shift thereto, and adjusts phase and DC-offset thereof based on control signals to produce a filtered output-signal. Control circuitry has a zero-crossing detector receiving the input-signal and the filtered output-signal, detecting zero-crossings of the input-signal and the filtered output-signal, asserting a digital zero cross signal at each zero crossing, and determining a phase-shift and DC-offset between the input-signal and filtered output-signal.

Abstract: A sensor module includes an organic substrate, a MEMS pressure sensor mounted to the organic substrate, and a unitary lid mounted on the substrate. The unitary lid includes a central elevated portion housing the MEMS pressure sensor, an aperture in the central elevated portion, and a flat flange extending from the central elevated portion to an edge of the organic substrate.

Abstract: An electronic circuit includes a first die, having a GaN transistor, and a second die, stacked so that an element of the second die electrically connects a first node and a second nodes of the first die respectively coupled to a conduction node and to a control node of the GaN transistor.

Abstract: Method of forming a metal-semiconductor contact, comprising the steps of: forming, on a semiconductor body having a first electrical conductivity, a first metal layer; performing a thermal treatment of at least a portion of the first metal layer by a LASER beam having an incidence direction on the first metal layer, including heating the portion of the first metal layer, along said incidence direction, at a temperature between 1500° C. and 3000° C.

Abstract: The present description relates to an electronic circuit comprising a semiconductor substrate having opposed first and second faces and electrically conductive pillars, intended to be connected to an element external to the electronic circuit, extending through the semiconductor substrate from the second face to the first face and projecting from the first face.

Abstract: A MEMS metamaterial has a substrate and a suspended structure having an elementary cell which extends at a distance from the substrate along a first direction. The elementary cell has a first structural region having a first material with a first coefficient of thermal expansion. The first structural region has a first side facing the substrate and a second side opposite to the first side. The elementary cell also has a second structural region having a second material different from the first material and with a second coefficient of thermal expansion different from the first coefficient of thermal expansion. The second structural region extends on at least part of the first structural region, on the first side, the second side, or both the first and second side of the first structural region.

Abstract: The present description concerns a device including phase-change memory cells, each memory cell including a first resistive element in lateral contact with a second element made of a phase-change material.

Abstract: In an embodiment a microcontroller includes a processing unit and a deserial-serial peripheral interface (DSPI) module, wherein the deserial-serial peripheral interface module is coupleable to a communication bus configured to operate according to a selected communication protocol, wherein the processing unit is configured to read user data intended for inclusion in an outgoing frame encoded according to the selected communication protocol, calculate, as a function of the user data, a cyclic redundancy check (CRC) value intended for inclusion in the outgoing frame, compose the outgoing frame by including the user data and the calculated CRC value into the outgoing frame, produce a DSPI frame encoded according to the selected communication protocol as a function of the outgoing frame and program a data register of the deserial-serial peripheral interface module with the DSPI frame, and wherein the deserial-serial peripheral interface module is configured to transmit the DSPI frame via the communication bus.

Abstract: The present description concerns a method of manufacturing a device comprising at least one radio frequency component on a semiconductor substrate comprising: a) a laser anneal of a first thickness of the substrate on the upper surface side of the substrate; b) the forming of an insulating layer on the upper surface of the substrate; and c) the forming of said at least one radio frequency component on the insulating layer.

Abstract: The present disclosure is directed to a device and method for lid angle detection that is accurate even if the device is activated in an upright position. While the device is in a sleep state, first and second sensor units measure acceleration and angular velocity, and calculate orientations of respective lid components based on the acceleration and angular velocity measurements. Upon the device exiting the sleep state, a processor estimates the lid angle using the calculated orientations, sets the estimated lid angle as an initial lid angle, and updates the initial lid angle using, for example, two accelerometers; two accelerometers and two gyroscopes; two accelerometers and two magnetometers; or two accelerometers, two gyroscopes, and two magnetometers.

Abstract: In an embodiment the method a includes performing, by an integrated circuit (IC) card hosted in a local equipment, authentication with a contactless subscriber device when the subscriber device is within a communication range of a contactless interface of the local equipment, receiving, by the IC card, an identifier (SID) identifying a software module from the subscriber device, the software module configured to enable a subscription profile for a mobile network operator, performing a checking operation at the IC card whether the SID matches a software module identifier stored in the IC card and selectively performing one of downloading the software module to the IC card, enabling the software module at the IC card or disabling the software module at the IC card as a result of performing the checking operation.

Abstract: In embodiments, a capacitance is coupled to a source of electrical charge via a drain to source current flow path through a field-effect transistor. The capacitance is pre-charged by making the field-effect transistor selectively conductive in response to the gate-source voltage of the field-effect transistor exceeding a threshold. The difference between the gate-source voltage of the field-effect transistor and the threshold provides an overdrive value of the field-effect transistor. The gate of the field-effect transistor is driven with a variable gate-source voltage having as a target maintaining a constant overdrive value. Electrical charge is controllably transferred from the source to the capacitance via the drain to source current flow path through the field-effect transistor avoiding undesirably high inrush currents.

Abstract: The present disclosure relates to a sensor having pixels, each pixel having photodiodes having each a terminal coupled to a first node associated with the photodiode; and an amplifier having a first part and, for each photodiode, a second part associated with the photodiode. The first part includes an output of the amplifier and a first MOS transistor of a differential pair. Each second part includes a second MOS transistor of the differential pair having its gate coupled to the first node associated with the photodiode the second part is associated with; a first switch coupling a source of the second transistor to the first part of the amplifier; and a second switch coupling a drain of the second transistor to the first part of the amplifier.

Abstract: An offset-cancellation circuit having a first amplification stage with a gain of the first amplification stage and configured to receive an offset voltage of a first amplifier. A storage element is configured to be coupled to and decoupled from the first amplification stage and configured to store a potential difference output by the first amplification stage. The potential difference is determined by the offset voltage of the first amplifier and the gain of the first amplification stage. A second amplification stage is coupled to the storage element and configured to receive the potential difference from the storage element when the storage element is decoupled from the first amplification stage and configured to deliver an offset-cancellation current. The offset-cancellation current is determined by the potential difference and a gain of the second amplification stage.