Abstract: In an embodiment, digital video frames in a flow are subjected to a method of extraction of features including the operations of: extracting from the video frames respective sequences of pairs of keypoints/descriptors limiting to a threshold value the number of pairs extracted for each frame; sending the sequences extracted from an extractor module to a server for processing with a bitrate value variable in time; receiving the aforesaid bitrate value variable in time at the extractor as target bitrate for extraction; and limiting the number of pairs extracted by the extractor to a threshold value variable in time as a function of the target bitrate.

Abstract: Systems and methods are disclosed for pre-fetching data into a cache memory system. These systems and methods comprise retrieving a portion of data from a system memory and storing a copy of the retrieved portion of data in a cache memory. These systems and methods further comprise monitoring data that has been placed into pre-fetch memory.

Abstract: A touch pad uses a plurality of optical mouse type sensors. The sensors are optimized for detection of motion along the predominant direction of a user's finger as the finger is moved around the touch pad. A first one of the sensors functions to optically sense motion in a first direction, while a second one of the sensors functions to optically sense motion in a second, different, direction. The first and second directions are oriented a closed, for example, circular, path.

Abstract: A device includes a first switch and a second switch, each switch being integrated on a chip having a back surface and an opposite front surface. Each chip includes a first conduction terminal and a control terminal on the front surface, while a second conduction terminal of the switch is located on the back surface. The first switch and the second switch are connected in a half-bridge configuration with the first switch's second conduction terminal electrically connected to the second switch's first conduction terminal. The chips are installed in a common package comprising an insulating body with an embedded heat sink. The chips of the switches are mounted on the heat sink such that the second conduction terminal of the first switch and the first conduction terminal of the second switch are in contact with the heat sink, with the heat sink providing the electrical connection between the two switches.

Abstract: A Geiger-mode avalanche photodiode may include an anode, a cathode, an output pad electrically insulated from the anode and the cathode, a semiconductor layer having resistive anode and cathode regions, and a metal structure in the semiconductor layer and capacitively coupled to a region from the resistive anode and resistive cathode regions and connected to the output pad. The output pad is for detecting spikes correlated to avalanche events.

Abstract: In one embodiment, a system for providing short circuit protection is disclosed. The system has a supply circuit and a series switch. The supply circuit has a supply input and a supply output, and is configured to deliver an output current at the supply output, and to disable the supply output if the output current exceeds a first current limit. The series switch coupled between the supply output of the supply circuit and a supply node, and the supply node is configured to be coupled to a load.

Abstract: A method for forming a via connecting a first upper level layer to a second lower level layer, both layers being surrounded with an insulating material, the method including the steps of: a) forming an opening to reach an edge of the first layer, the opening laterally continuing beyond said edge; b) forming a layer of a protection material on said edge only; c) deepening said opening by selectively etching the insulating material to reach the second lower level layer; and d) filling the opening with at least one conductive contact material.

Abstract: A method of forming a transistor is disclosed, in which gate-to-substrate leakage is addressed by forming and maintaining a conformal oxide layer overlying the transistor gate. Using the method disclosed for an n-type device, the conformal oxide layer can be formed as part of the source-drain doping process. Subsequent removal of residual phosphorous dopants from the surface of the oxide layer is accomplished without significant erosion of the oxide layer. The removal step uses a selective deglazing process that employs a hydrolytic reaction, and an acid-base neutralization reaction that includes an ammonium hydroxide component.

Abstract: A process for manufacturing a membrane of nozzles of a spray device, comprising the steps of laying a substrate, forming a membrane layer on the substrate, forming a plurality of nozzles in the membrane layer, forming a plurality of supply channels in the substrate, each supply channel being substantially aligned in a vertical direction to a respective nozzle of the plurality of nozzles and in direct communication with the respective nozzle.

Abstract: A memory cell includes a true data node, a true pullup transistor, a complement data node and a complement pullup transistor. A true switching circuit selectively supplies a first or second supply voltage to a source of the true pullup transistor. A true bias switching circuit selectively supplies a third or fourth supply voltage to a body of the true pullup transistor. When writing a logic high data value to the true data storage node, a control circuit causes the true switching circuit to supply the second supply voltage and the true bias switching circuit to supply the third supply voltage. The second supply voltage is higher than the first supply voltage, and the fourth supply voltage is higher than the third supply voltage. A similar operation is performed with respect to the complement pullup transistor when writing a logic high data value to the complement data storage node.

Abstract: A method of detecting a fault attack including generating a first signature of a first group of data values by performing a single commutative non-Boolean arithmetic operation between all the data values of the first group; generating a second set of data values by performing a permutation of the first set of data values; generating a second signature of the second group of data values by performing said single commutative non-Boolean arithmetic operation between all the data values of the second group; and comparing the first and second signatures to detect a fault attack.

Abstract: An integrated circuit may include at least one MOS transistor having a sigmoid response. The at least one MOS transistor may include a substrate, a source region, a drain region, a gate region, and insulating spacer regions on either side of the gate region. The substrate may include a first region situated under the gate region between the insulating spacer regions. At least one of the source and drain regions may be separated from the first region of the substrate by a second region of the substrate situated under an insulating spacer region, which may be of a same type of conductivity as the first region of the substrate.

Abstract: A semiconductor device may include a substrate, source and drain regions in the substrate, a recessed epitaxial channel layer in the substrate between the source and drain regions, and a high-K gate dielectric layer overlying the recessed epitaxial channel layer. The semiconductor device may further include a gate electrode overlying the high-K gate dielectric layer, a dielectric cap layer in contact with top and sidewall portions of the gate electrode, the dielectric cap layer having a lower dielectric constant than the high-K gate dielectric layer, and source and drain contacts coupled to the source and drain regions.

Abstract: A method for fabricating at least one cell of a semiconducting component includes positioning a first conducting polysilicon-type layer on a substrate, above an insulating oxide-type layer. The production of at least one trench within the first conducting layer is included to form two electrically unlinked distinct conducting parts intended to form two transistor gates of respectively two distinct twin cells.

Abstract: A system and method for decoding quadrature signals includes a quadrature signal generator, a quadrature signal decoder, a key matrix and a driver. The quadrature signal generator generates quadrature signals on rotation. The quadrature signal decoder is configured to convert the quadrature signals into non-overlapping signals. The key matrix is configured to receive the non-overlapping signals. The driver is configured to scan the key matrix to decode the non-overlapping signals to generate an event update corresponding to a direction of rotation of the quadrature signal generator.

Abstract: A pixel circuit includes a single photon avalanche diode (SPAD) and a measurement circuit including a capacitance. The SPAD detects an incident photon and the measurement circuit discharges the capacitance at a known rate during a discharge time period. The length of the discharge time period is determined by the time of detection of the photon, such that the final amount of charge on the capacitance corresponds to the time of flight of the photon. The pixel circuit may be included in a time resolved imaging apparatus. A method of measuring the time of flight of a photon includes responding to an incident photon detection by discharging a capacitance at a known rate and correlating final capacitance charge to time of flight.

Abstract: In an embodiment, an apparatus includes a determiner, converter, adapter, and modifier. The determiner is configured to generate a representation of a difference between a first frequency at which a first signal is sampled and a second frequency at which a second signal is sampled, and the converter is configured to generate a second sample of the first signal at a second time in response to the representation and a first sample of the first signal at a first time. The adapter is configured to generate a sample of a modifier signal in response to the second sample of the first signal, and the modifier is configured to generate a modified sample of the second signal in response to a sample of the second signal and the sample of the modifier signal. For example, such an apparatus may be able to reduce the magnitude of an echo signal in a system having an audio pickup (e.g., a microphone) near an audio output (e.g., a speaker).

Abstract: A motion estimation method and device are provided for processing images to be inserted, between a preceding original image and a following original image, into a sequence of images. Each image is divided into pixel blocks associated with motion vectors. For a current block of an image being processed, motion vectors associated with blocks of the image being processed and/or associated with blocks of a processed image are selected. Candidate vectors are generated from selected motion vectors. An error is calculated for each candidate vector. A penalty is determined for a subset of candidate vectors on the basis of the values of the pixels of the pixel block in the preceding original image from which the candidate motion vector points to the current block and/or on the basis of the values of the pixels of the pixel block in the following original image to which the candidate motion vector points from the current block.

Abstract: A pixel circuit includes a single photon avalanche diode (SPAD) and a measurement circuit including a capacitance. The circuit is operable to discharge a known portion of the charge on the capacitance upon each detection of a SPAD event within a time period, such that the charge remaining on the capacitance at the end of the time period corresponds to the number of SPAD events detected within the time period. A time resolved imaging apparatus includes an array of such pixel circuits. A method of counting photon detection includes sensing photons with a SPAD device and discharging a known portion of the charge on a capacitance upon each detection of a SPAD event within a time period.

Abstract: Microelectronic chip including a semiconductor substrate; at least one area of its surface which is suitable to be electrically connected to a metal frame designed to accommodate the chip; at least one interconnect area formed by a copper-based conductive layer and comprising a connecting device, the interconnect area being connected to the area by a conductor, wherein the area is formed by a layer forming a copper diffusion barrier inserted between interconnect area and the substrate.