Abstract: A method for manufacturing a bipolar transistor, including the steps of: forming a first surface-doped region of a semiconductor substrate having a semiconductor layer extending thereon with an interposed first insulating layer; forming, at the surface of the device, a stack of a silicon layer and of a second insulating layer; defining a trench crossing the stack and the semiconductor layer opposite to the first doped region, and then an opening in the exposed region of the first insulating layer; forming a single-crystal silicon region in the opening; forming a silicon-germanium region at the surface of single-crystal silicon region, in contact with the remaining regions of the semiconductor layer and of the silicon layer; and forming a second doped region at least in the remaining space of the trench.
Abstract: A method for managing a flash memory device including pages of memory cells is described. The memory device may be erasable at the page level, and the pages may include operative pages for storing operative values and service pages for storing information relating to the erasing of the operative pages. In response to a request to erase selected operative pages, the method may include determining a service page in use among the service pages according to service information stored in the service pages, verifying the presence a service page to be erased, and applying an erasing pulse to each service page to be erased. The method may also include writing an address of the operative pages into the service page in use, erasing the selected operative pages, and writing a completion indication of the erasing of the selected operative pages into the service page in use.
Type:
Application
Filed:
April 10, 2013
Publication date:
October 17, 2013
Applicant:
STMicroelectronics S.r.l.
Inventors:
Giovanni Matranga, Mario Micciche, Rosario Roberto Grasso
Abstract: A method for manufacturing an image sensor, including the steps of: forming elementary structures of an image sensor on the first surface of a semiconductor substrate; installing a handle on the first surface; defining trenches in the handle, the trenches forming a pattern in the handle; and installing, on a hollow curved substrate, the obtained device on the free surface side of the handle, the pattern being selected according to the shape of the support surface.
Abstract: A temperature-current transducer includes first and second voltage dividers, with the first voltage divider including a thermistor in an environment. An operational amplifier has a first input coupled to an intermediate node of the first voltage divider, and a second input coupled to an intermediate node of the second voltage divider. A cascode stage is configured to be biased in a conduction state and is controlled by the operational amplifier. The cascode stage includes a first current terminal coupled to the intermediate node of the second voltage divider. A current mirror is coupled to a second current terminal of the cascode stage, and is configured to mirror on an output line current flowing through the cascode stage that is representative of temperature differences between a temperature in an environment of the thermistor and a reference temperature.
Abstract: An embodiment of a method for manufacturing a power device integrated on a semiconductor substrate. The method includes photo-lithography and etching of an epitaxial layer for the formation of at least one deep trench; deposition of a dielectric layer with partial filling of the at least one trench; complete filling of the at least one trench with a layer of sacrificial material; selective etching of the dielectric layer with consequent retrocession below the layer of sacrificial material; selective etching of the layer of sacrificial material with consequent formation of an empty region within the at least one trench; and growth of a layer of gate oxide; formation of at least one gate region, of at least one buried source region, of at least one body region and of at least one source region.
Abstract: Complete testing of an analog-to-digital converter (ADC) can be carried out using digital signals and at high speeds. Circuit elements are added to an ADC so that a first phase of testing may be carried out using a limited number of analog test voltages. The ADC may then be reconfigured using added circuit elements to disable conventional analog-to-digital conversion. A digital signal may then be applied to the ADC to rapidly test all switching elements used in analog-to-digital conversion. According to some implementations, testing times for ADCs may be reduced from hours to milliseconds.
Type:
Grant
Filed:
December 29, 2011
Date of Patent:
October 15, 2013
Assignee:
STMicroelectronics Asia Pacific Pte. Ltd.
Abstract: A method of designing a modular package: determining a package outline of a modular package assembly from package outline design data; determining seating plane and overall package length characteristics of the assembly from seating plane and package length design data; the design tool calculating minimum package height of the modular package assembly from the seating plane and package length design data; designing the dimensions and configuration of one or more subassemblies from subassembly design data; defining dimensions and configuration of a plurality of mechanical layers of a protective modular package cover given the defined package outline, the seating plane, overall package length, the minimum package height, and the subassemblies; defining an adhesive deposition strategy to join mechanical layers of the cover; designing the cover in accordance with the dimensions and configuration of the mechanical layers; and incorporating the assembly and the adhesive deposition strategy into a manufacturing asse
Type:
Grant
Filed:
October 13, 2010
Date of Patent:
October 15, 2013
Assignees:
STMicroelectronics, Inc., RJR Polymers, Inc.
Inventors:
Craig J. Rotay, John Ni, David Lam, David Lee DeWire, John W. Roman, Richard J. Ross
Abstract: A process is described for integrating two closely spaced thin films without deposition of the films through deep vias. The films may be integrated on a wafer and patterned to form a microscale heat-trimmable resistor. A thin-film heating element may be formed proximal to a thin-film resistive element, and heat generated by the thin-film heater can be used to permanently trim a resistance value of the thin-film resistive element. Deposition of the thin films over steep or abrupt topography is minimized by using a process in which the thin films are deposited in a sequence that falls between depositions of thick metal contacts to the thin films.
Abstract: According to an embodiment of the present disclosure, a method of pre-migrating metal ions is disclosed. A metal in a semiconductor configuration is exposed to water and oxygen to yield metal ions. The metal couples a conductor to another material. The metal and the conductor are exposed to an electrical field in such a manner that one or both of the metal and the conductor becomes an anode to a corresponding cathode. The metal ions are then allowed to migrate from the anode to the cathode to form a migrated metal. Finally, a migration inhibitor is applied on top of the migrated metal to prevent further migration.
Abstract: A method for designing an electronic circuit including determining at least one hold violation in a net routing; inserting a routing blockage associated with each at least one hold violation; de-routing the determined net-routing and re-routing the determined net-routing dependent on at least the routing blockage.
Abstract: A method for uniformly planarizing a wafer that includes determining a first wafer warped value at a first zone on the wafer, determining a second wafer warped value at a second zone on the wafer, and calculating a pressure difference based on the first and second wafer warped values at the first and second zones is provided. The method also includes performing a chemical mechanical polishing of the wafer, applying a first pressure based on the first wafer warped value to the wafer at the first zone during the chemical mechanical polishing, and applying a second pressure based on the second wafer warped value to the wafer at the second zone during the chemical mechanical polishing, a difference between the first pressure and the second pressure based on the pressure difference.
Type:
Grant
Filed:
December 29, 2009
Date of Patent:
October 15, 2013
Assignee:
STMicroelectronics, Inc.
Inventors:
John H. Zhang, Walter Kleemeier, Ronald K. Sampson
Abstract: A method for detecting an object in an image by means of an image processing device, includes several steps of object search in the image at different search scales. During at least one of the search steps, portions of the image are excluded from the search. The size of the portions decreases as the search scale increases.
Abstract: An embodiment of a driving device is proposed for supplying at least one regulated global output current to a load. The driving device includes programming means for programming a value of the global output current within a global current range. Reference means are provided for supplying a reference voltage, which has a value corresponding to the value of the global output current. Conversion means are then used for converting the reference voltage into the global output current. The conversion means may further include a plurality of conversion units for corresponding partial current ranges, which partition the global current range.
Type:
Application
Filed:
March 14, 2013
Publication date:
October 10, 2013
Applicant:
STMICROELECTRONICS S.R.L.
Inventors:
Roberto La Rosa, Massimo Michele Antonio Sorbera
Abstract: A method includes providing at least one target bandwidth for bandwidth usage on an interconnect, the target bandwidth being for traffic associated with a traffic initiator. The method also includes measuring a served bandwidth and resetting the measuring of served bandwidth in response to an occurrence of an event.
Type:
Application
Filed:
March 7, 2013
Publication date:
October 10, 2013
Applicants:
STMicroelectronics S.r.I, STMicroelectronics (Grenoble 2) SAS
Abstract: At least three electrically conducting blocks are disposed within an isolating region; and at least two of them are mutually separated and capacitively coupled by a part of the isolating region. At least two of them, being semiconductor, have opposite types of conductivity or identical types of conductivity, but with different concentrations of dopants, and these are in mutual contact by one of their sides. The mutual arrangement of these blocks within the isolating region, their type of conductivity and their concentration of dopants form at least one electronic module. Some of the blocks define input and output blocks.
Abstract: Embodiments are directed to switching of stations STA, access points APs and PCPs that are communicating through a wireless link from one frequency band to another. One embodiment is directed to switching of stations STA that are communicating through a tunneled direct link setup (TDLS) link from one frequency band to another. A multiband element may be added to a TDLS discovery request and TDLS discovery response frames to allow each of the stations communications through a TDLS to determine if the other station has multiband capability. In one embodiment, a pairwise transient key (PTK) is created for both a current band in which the stations STA are communicating and a new band over which the stations may communicate in the future. In this way there is no need to calculate a new pairwise transient key PTK for the new frequency band.
Abstract: The subject comprises processing means configured for communicating with an item of equipment according to a contactless communication protocol containing an anticollision procedure; the processing means (MT) comprise several application modules (MA1, . . . MAj) respectively associated with several different identifiers (ID1, . . . IDj), and triggering means (MDCL) configured for causing a triggering of the said anticollision procedure between the said object and the said item of equipment.
Type:
Application
Filed:
December 7, 2011
Publication date:
October 10, 2013
Applicant:
Stmicroelectronics (Rousset) SAS
Inventors:
Fabrice Romain, Christophe Cataldo, Christophe Mani, Sophie Gabriele
Abstract: An application program providing a task in an electronic device is protected. Information used for executing the task in the electronic device is stored in a smart object to be coupled thereto. The information is requested from the smart object at run time execution of the application program by the electronic device, and is returned to the application program to define at run time a correct semantic of the task.
Abstract: A device and method are provided for detecting a root moisture content of clothing in a clothes dryer. The dryer has two conducting bars situated in the dryer bin. A pulse generator circuit is coupled to the conducting bars. A microcontroller is coupled to an output of the pulse generator circuit. The pulse generator circuit generates a pulse when wet clothing contacts the conducting bars in the dryer bin. The microcontroller receives the pulses and counts the pulses that are longer than a threshold length. The microcontroller issues a termination signal based on the number of counted pulses.
Abstract: The invention discloses frame-based, on-demand spectrum contention methods and systems to share spectrum resources in cognitive radio networks in general and in Wireless Regional Area Networks (WRANs) having overlapping service areas in particular. As demand for increased spectrum usage arises, frames within synchronized superframes are allocated, on a frame-by-frame basis, based on independently chosen, equiprobable random numbers generated for each base station contending for transmission/reception use of the frames.