Patents Assigned to STMicroelectronics
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Publication number: 20120161846Abstract: A circuit for converting a measured variable capacitance to an output voltage signal includes a charge amplifier circuit selectively coupled to an integrator circuit. The charge amplifier circuit, in one implementation, is configured as a high pass filter. In another implementation, the charge amplifier circuit is configured as a combination high pass and low pass filter. The charge amplifier circuit is selectively coupled to the integrator circuit when the circuit forces a switch in voltage across a measurement capacitor.Type: ApplicationFiled: March 2, 2011Publication date: June 28, 2012Applicant: STMicroelectronics Asia Pacific Pte LtdInventor: Kusuma Adi Ningrat
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Publication number: 20120161823Abstract: Circuitry and method for dividing the frequency of an input clock signal for use in a prescaler of a digital frequency synthesizer. A flip flop is clocked on a first type of edge of the input clock signal, and provides an output for use as a divided clock signal. Feedback circuitry is clocked on the first type of edge of the input clock signal and provides a signal to a data input of the flip flop based on the inverse of the output of the flip flop.Type: ApplicationFiled: July 7, 2011Publication date: June 28, 2012Applicant: STMicroelectronics Pvt. Ltd.Inventor: Nitin Gupta
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Publication number: 20120163064Abstract: A read only memory cell circuit is provided. The memory cell circuit includes at least one memory cell. A pair of bit lines associated with each memory cell is provided which form a complementary output. The at least one memory cell is configured to be coupled to first or second of the bit line pair.Type: ApplicationFiled: July 8, 2011Publication date: June 28, 2012Applicant: STMicroelectronics Pvt. Ltd.Inventors: Nitin Jain, Piyush Jain
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Publication number: 20120161199Abstract: A mesa-type bidirectional Shockley diode delimited on its two surfaces by a peripheral groove filled with a glassivation including a substrate of a first conductivity type; a layer of the second conductivity type on each side of the substrate; a region of the first conductivity type in each of the layers of the second conductivity type; a buried region of the first conductivity type under each of the regions of the first conductivity type, at the interface between the substrate and the corresponding layer of the second conductivity type, each buried region being complementary in projection with the other; and a peripheral ring under the external periphery of each of the glassivations, of same doping profile as the buried regions.Type: ApplicationFiled: December 21, 2011Publication date: June 28, 2012Applicant: STMicroelectronics (Tours) SASInventors: Yannick Hague, Samuel Menard
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Publication number: 20120161888Abstract: An embodiment of a crystal oscillator circuit includes leakage-current compensation, transconductance enhancement, or both leakage-current compensation and transconductance enhancement. Such an oscillator circuit may draw a reduced operating current relative to a conventional oscillator circuit, and thus may be suitable for battery or other low-power applications.Type: ApplicationFiled: June 30, 2011Publication date: June 28, 2012Applicant: STMICROELECTRONICS PVT. LTD.Inventors: Abhirup LAHIRI, Anurag TIWARI
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Publication number: 20120161573Abstract: A method of manufacturing microstructures, such as MEMS or NEMS devices, including forming a protective layer on a surface of a moveable component of the microstructure. For example, a silicide layer may be formed on one or more surfaces of a poly-silicon mass that is moveable with respect to a substrate of the microstructure. The process may be self-aligning.Type: ApplicationFiled: December 27, 2010Publication date: June 28, 2012Applicant: STMicroelectronics, Inc.Inventor: Ming Fang
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Publication number: 20120164775Abstract: Electronic device which comprises a substrate provided with at least one passing opening, a MEMS device with function of differential sensor provided with a first and a second surface and of the type comprising at least one portion sensitive to chemical and/or physical variations of fluids present in correspondence with a first and a second opposed active surface thereof, the first surface of the MEMS device leaving the first active surface exposed and the second surface being provided with a further opening which exposes said second opposed active surface, the electronic device being characterized in that the first surface of the MEMS device faces the substrate and is spaced therefrom by a predetermined distance, the sensitive portion being aligned to the passing opening of the substrate, and in that it also comprises a protective package, which incorporates at least partially the MEMS device and the substrate so as to leave the first and second opposed active surfaces exposed respectively through the passinType: ApplicationFiled: January 25, 2012Publication date: June 28, 2012Applicant: STMICROELECTRONICS S.R.L.Inventors: Lorenzo BALDO, Chantal COMBI, Mario Francesco CORTESE
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Publication number: 20120161851Abstract: An analog switch includes a transistor having a current path between an input and an output, a gate coupled to a control terminal, and a bulk terminal, and a switched bulk control circuit coupled to the control terminal, the bulk terminal, and ground to reduce an equivalent capacitance seen from a source terminal or drain terminal of the transistor towards the bulk terminal of the transistor. The bulk control circuit includes an all-NMOS bulk control circuit if an NMOS transistor switch is used.Type: ApplicationFiled: March 2, 2012Publication date: June 28, 2012Applicant: STMICROELECTRONICS ASIA PACIFIC PTE LTD.Inventor: Dianbo GUO
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Publication number: 20120161759Abstract: A magnetic-field sensor adapted to detect an external magnetic field, comprising: a first chip, including a first magnetoresistive structure for detection of the external magnetic field, the first magnetoresistive detection structure including an electrical-contact pad and magnetoresistive means; and a second chip housing an integrated electronic circuit and a magnetic-field generator, the first and second chips being mutually arranged in such a way that the integrated electronic circuit can be electrically coupled to the electrical-contact pad of the magnetoresistive structure and in such a way that the magnetic-field generator can be magnetically coupled to the magnetoresistive structure.Type: ApplicationFiled: December 27, 2011Publication date: June 28, 2012Applicant: STMICROELECTRONICS S.R.L.Inventors: Enrico Pozzati, Fabio Bottinelli, Carlo Alberto Romani
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Publication number: 20120161198Abstract: A mesa-type bidirectional Shockley diode including a substrate of a first conductivity type; a layer of the second conductivity type on each side of the substrate; a region of the first conductivity type in each of the layers of the second conductivity type; a buried region of the first conductivity type under each of said regions of the first conductivity type, each buried region being complementary in projection with the other; and a groove arranged in the vicinity of the periphery of the component on each of its surfaces, the component portion external to the groove comprising, under the external portion of the upper and lower regions of the second conductivity type, regions of the first conductivity type of same doping profile as said buried regions.Type: ApplicationFiled: December 15, 2011Publication date: June 28, 2012Applicant: STMicroelectronics (Tours) SASInventors: Yannick Hague, Samuel Menard
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Publication number: 20120161819Abstract: A high voltage transmission switch comprises a switching block coupled between a connection terminal to a load and a low voltage output terminal and comprising at least a first switching transistor and a second switching transistor coupled between the connection terminal and the low voltage output terminal and interconnected at a first circuit node; and a driving circuit coupled between a positive low voltage supply reference and a negative high voltage supply reference and having an output terminal connected to the switching block. The driving circuit including at least a first driving transistor coupled between the positive low voltage supply reference and the output terminal and a second driving transistor coupled between the output terminal and the negative high voltage supply reference.Type: ApplicationFiled: December 27, 2010Publication date: June 28, 2012Applicant: STMICROELECTRONICS S.R.L.Inventors: Sandro Rossi, Giulio Ricotti
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Publication number: 20120163050Abstract: A circuit for converting an A.C. power supply voltage into a D.C. voltage, including: a first branch capable of providing a first power level; and a second parallel branch capable of providing a second power level greater than the first one, the second branch including a bidirectional activation switch.Type: ApplicationFiled: December 21, 2011Publication date: June 28, 2012Applicant: STMicroelectronics (Tours) SASInventors: Laurent Gonthier, Antoine Passal
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Publication number: 20120161949Abstract: Actuation systems and devices using an electrically deformable material are disclosed. In the embodiments, a bidirectional actuator assembly includes a first unit including an electrically deformable material coupleable to an activation voltage and configured to provide a displacement in a first direction when the activation voltage is applied to the first unit. A second unit is serially electrically coupled to the first unit and includes an electrically deformable material coupleable to the activation voltage and configured to provide a displacement in a second direction that is different from the first direction when the activation voltage is applied to the second unit. A unidirectional actuator assembly includes at least one unit including an electrically deformable material coupleable to an activation voltage, wherein the electrically deformable material provides a displacement in a selected direction when the activation voltage is applied to the at least one unit.Type: ApplicationFiled: December 28, 2010Publication date: June 28, 2012Applicant: STMICROELECTRONICS ASIA PACIFIC PTE LTD.Inventor: Hin Sing FONG
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Publication number: 20120161213Abstract: An imaging device is formed in a semiconductor substrate. The device includes a matrix array of photosites. Each photosite is formed of a semiconductor region for storing charge, a semiconductor region for reading charge specific to said photosite, and a charge transfer circuit configured so as to permit a transfer of charge between the charge storage region and the charge reading region. Each photosite further includes at least one buried first electrode. At least one part of that buried first electrode bounds at least one part of the charge storage region. The charge transfer circuit for each photosite includes at least one second buried electrode.Type: ApplicationFiled: September 23, 2011Publication date: June 28, 2012Applicant: STMICROELECTRONICS (CROLLES 2) SASInventors: Francois Roy, Julien Michelot
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Publication number: 20120166505Abstract: A FIR transmit architecture uses multiple driver divisions to allow signals with different delays to be summed into the output signal by the driver itself. The architecture includes a first multiplexer, a plurality of delay cells, a plurality of sign blocks, a switch block, a second multiplexer, and a plurality of drivers.Type: ApplicationFiled: December 22, 2011Publication date: June 28, 2012Applicants: STMicroelectronics Srl, STMicroelectronics (Canada) Inc.Inventors: John Hogeboom, Hock Khor, Matteo Traldi, Anton Pelteshki
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Publication number: 20120165635Abstract: Temperature variations in a patient's body can lead to inaccurate glucose readings. To compensate for changes in temperature, the temperature at a glucose sensing site can be sensed using a thermocouple. A compensated glucose level can be determined based on the temperature and the sensed glucose level. A glucose sensing device is described that includes a glucose sensor having a working electrode and a thermocouple having a junction positioned proximate the working electrode, with both the glucose and temperature sensors including the same metals.Type: ApplicationFiled: December 22, 2010Publication date: June 28, 2012Applicant: STMicroelectronics Asia Pacific Pte Ltd.Inventors: Praveen Kumar Radhakrishnan, Shian Yeu Kam
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Publication number: 20120161848Abstract: The invention relates to a driver circuit used to transmit a digital signal from a source device to a destination device. The driver circuit provides a controlled switching time to improve digital signal quality, while reducing electromagnetic interference. In the circuit, a pair of first switches of a first plurality are coupled in parallel between a first current node and respective ones of first and second output terminals. A plurality of pairs of second switches of a second plurality are coupled in parallel between a respective second current node and the first and second output terminals. Timing circuitry applies input signals to the pair of first switches and successive input signals to the pairs of second switches so as to develop a staggered voltage across a load coupled between the first and second output terminals.Type: ApplicationFiled: December 28, 2010Publication date: June 28, 2012Applicant: STMicroelectronics Pvt. Ltd.Inventor: Rajeev Jain
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Publication number: 20120163188Abstract: Apparatus and methods for wireless data transmission in a multimedia network are disclosed. Disclosed is a network having a source coupled to a sink using a virtual channel that includes a wireless communication channel. A source end of the system provides a packetizing data stream having a stream of payloads such that each payload is associated with its respective originating source stream. The system configured to encode the packetized data stream for wireless transport. A non-wireless source end of the system receives quality of service information from downstream. Thereby enabling adjustments to the source content and packetized data streams.Type: ApplicationFiled: March 8, 2012Publication date: June 28, 2012Applicant: STMicroelectronics, Inc.Inventor: Osamu Kobayashi
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Publication number: 20120161802Abstract: A method for scan-testing of an integrated circuit includes the following steps carried out by the circuit itself: upon powering on of the circuit, watching for bit sequences applied to a use pin configured for receiving serial data from the exterior at the rate of a clock signal applied to a clock pin; configuring the circuit in a test mode when a bit sequence is identified as a test initialization sequence; connecting latches of the circuit in a shift register configuration, and connecting the shift register for receiving a test vector in series from the use pin; switching the transfer direction of the use pin to the output mode for providing to the exterior serial data at the rate of the clock signal; and connecting the shift register for providing its content, as a test result set, in series on the use pin.Type: ApplicationFiled: December 27, 2011Publication date: June 28, 2012Applicants: STMicroelectronics (Grenoble 2) SAS, STMicroelectronics SAInventors: Philippe Lebourg, Paul Armagnat, Thomas Droniou
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Publication number: 20120161269Abstract: A front-side illuminated image sensor, including photodetection regions, charge transfer elements, and an interconnection stack, all formed at the surface of a semiconductor substrate, microcavities being formed in the interconnection stack in front of the photodetection regions, microcavities being filled with materials forming color filters including metal pigments, regions of a material forming a barrier against ionic diffusion extending on the lateral walls of the microcavities.Type: ApplicationFiled: December 22, 2011Publication date: June 28, 2012Applicants: STMicroelectronics S.A., Commissariat a l`Energie Atomique et aux Energies Alternatives, STMicroelectronics (Crolles 2) SASInventors: Christophe Aumont, Jean-Pierre Oddou, Jérôme Vaillant, Patrick Gros D'Aillon