Abstract: A detection method includes: determining process data of a new process; according to the process data of the new process, detecting, by a first production system, whether a wafer carrier type of the new process matches an acceptable level of a corresponding process step or not and whether the new process matches a flag of the corresponding process step or not; if not, determining that the process data does not pass the detection and outputting first detection information; or if the wafer carrier type of the new process matches the acceptable level of the corresponding process step and the new process matches the flag of the corresponding process step, detecting, by a second production system, if the second production system detects a mismatch, determining that the process data does not pass the detection and outputting second detection information.

Abstract: A magnetoelectric memory device includes a magnetic tunnel junction located between a first electrode and a second electrode. The magnetic tunnel junction includes a reference layer, a nonmagnetic tunnel barrier layer, a free layer, and a dielectric capping layer. At least one layer that provides voltage-controlled magnetic anisotropy is provided within the magnetic tunnel junction, which may include a pair of nonmagnetic metal dust layers located on, or within, the free layer, or a two-dimensional metal compound layer including a compound of a nonmagnetic metallic element and a nonmetallic element.

Abstract: The present application relates to semiconductor structure and forming method comprising: forming substrate, wherein plurality of capacitive contacts are provided in the substrate, plurality of electrically conductive contact pads are provided at surface of the substrate to be correspondingly connected to plurality of capacitive contacts on one-to-one basis, and a space is present between every two adjacent electrically conductive contact pads; forming filling layer that is fully filled in the space; forming stacked structure at the filling layer and surface of the electrically conductive contact pads, wherein the stacked structure includes plurality of supporting layers stacked one-on-another along direction perpendicular to the substrate, the filling layer is in contact with the supporting layer disposed at bottom of the stacked structure, and etching selection ratio between the filling layer and the supporting layer in contact therewith is greater than preset value; and etching the stacked structure to for

Abstract: Techniques are provided for remote orchestration of workflows performed by processing circuitry of a cloud infrastructure. A method includes: (a) executing a workflow administration module (WAM) on the processing circuitry of the cloud infrastructure; (b) accessing, by the WAM, a workflow database stored within the cloud infrastructure to determine that a workflow is scheduled for execution; (c) issuing a command from the WAM to remote customer infrastructure (RCI) external to the cloud infrastructure, the command instructing the RCI to execute the workflow on the RCI, the command including information about the location of the workflow; (d) receiving metadata by the WAM from the RCI regarding execution of the workflow on the RCI; and (e) storing the received metadata in the workflow database in connection with the workflow. A corresponding method is provided for use at the RCI. Corresponding computer program products, apparatuses, and systems are also provided.

Abstract: Provided are a method for testing a memory, an apparatus for testing a memory, a computer-readable storage medium, and an electronic device, which relate to the field of integrated circuit technology. The method for testing a memory includes: writing first data into each of memory cells of a memory array; enabling a data mask mode, and writing second data into each of the memory cells of the memory array; enabling a leakage mode, and writing the first data into a memory cell corresponding to a column under test of the memory array; and after preset leakage time, disabling the leakage mode, and reading data from the memory cell corresponding to the column under test for testing, to determine whether there are at least two columns simultaneously turned on in the memory array. This method may test whether a row decoder fails.

Abstract: A method for accurately obtaining a photolithography parameter. In the method, photolithography is performed on a target carrier with different preset photolithography parameters by using a same mask pattern as a mask, to obtain a plurality of target patterns. Each of the target pattern is compared with a standard pattern to obtain an evaluation value, and the target pattern is set as a valid pattern, when the evaluation value corresponding to the target pattern is greater than or equal to a preset value. A Bosung curve is drawn by taking a line width of the valid pattern and a preset photolithography parameter corresponding to the line width as data. The photolithography parameter corresponding to a preset line width is obtained according to the Bosung curve.

Abstract: A video signal conversion method includes: receiving an input signal from a video source; extracting an image metadata from the input signal; determining whether the input signal corresponds to a high dynamic range (HDR) imaging format according to at least one format information of the image metadata and determining whether a video receiver supports the high dynamic range imaging format; in response to the input signal corresponding to the high dynamic range imaging format and the video receiver being not support the high dynamic range imaging format, generating a conversion command; receiving, by a video processor, the conversion command; converting, by the video processor, the input signal into an output signal corresponding to a standard dynamic range (SDR) imaging format according to the conversion command; sending, by the video processor, the output signal to the video receiver; and receiving by the video receiver, the output signal in SDR imaging format.

Abstract: A semiconductor structure and method for forming the semiconductor structure are provided. The method includes: providing a semiconductor substrate, which has a plurality of independent active areas that are isolated from each other by shallow trench isolation areas; forming trenches by etching the active areas and the shallow trench isolation areas, the trenches include first trenches and second trenches, the first trenches are located in the active areas, the second trenches are located in the shallow trench isolation areas, and the first trenches have a width greater than a width of the second trenches; forming word lines in the trenches, the word lines include first word lines and second word lines, each first word line is located in the respective first trench, each second word line is located in the respective second trench, and the first word lines have a width greater than a width of the second word lines.

Abstract: A method of implementing a network-enabled secure door lock, comprising obtaining measurements of an environment associated with a door from a variety of sensor types; generating, based at least in part on the measurements, a set of inputs to a machine-learning model; inputting the set of inputs into the machine learning model to determine a status of the door; generating a message that indicates the status of the door; and transmitting the message to a user device.

Abstract: An image is processed to determine semantic data about what is depicted in that image. The semantic data provides information about location in the image and semantic category of an object depicted within the image. The semantic categories may include “background”, “face”, “text”, “clothing”, “exercise”, and so forth. The semantic data may then be used to facilitate distribution of image data while limiting the information shared. For example, the semantic data may indicate the placement and position of a user exercising in first video data. Using the semantic data, second video data may be produced that obscures or replaces parts of the image that do not depict the user exercising. The second video data may then be used for providing feedback to the user, while preventing disclosure of other people, background, and so forth that are depicted in the first video data.

Abstract: Techniques for facilitating returns of ordered items include receiving, by a control device, a first code associated with an order, determining that the code corresponds to a valid order, and granting access to a controlled access area where a user may examine the ordered items. If a second code associated with a particular item is received by the control device, a determination is made that the code corresponds to an item associated with the order, and access to a container within the controlled access area is granted. Once an item is placed in the container, sensors in the container determine characteristics of the item. If the determined characteristics correspond to item data that indicates the expected characteristics of the item, data indicative of a return of the item is generated.

Abstract: An orthodontic appliance and associated systems and methods are disclosed herein. In some embodiments, the present technology includes a positioning member configured to position an orthodontic appliance during installation in the patient's mouth. The positioning member may comprise a first portion configured to be coupled to the patient's teeth and a second portion extending away from the first portion. The second portion may be configured to be detachably coupled to the orthodontic appliance. While the positioning member is coupled to the orthodontic appliance, the positioning member is configured to be positioned in the patient's mouth and coupled to the patient's teeth, thereby positioning the orthodontic appliance at a desired location adjacent a patient's oral anatomy.

Abstract: Methods and apparatuses for identifying an additive manufacturing process for unused output material of an atomization process are described. The method comprises determining a set of characteristics of output material that is unused in a first additive manufacturing process. The method further comprises determining a respective set of parameters associated with respective input material of each of a set of other additive manufacturing processes. The method of further comprises identifying one of the set of other additive manufacturing processes that accepts the output material as input material based on the characteristics of the output material and based on respective sets of parameters.

Abstract: A semiconductor structure includes: a base substrate; an insulator, located on one side of the base substrate; bit lines, arranged in the insulator, the bit lines being distributed at intervals along first direction and extending along second direction; active bodies, located in the insulator, the active bodies being located on sides of respective bit lines facing away from the base substrate, orthographic projection of each active body on the base substrate at least partially coinciding with the orthographic projection of a respective bit line on the base substrate, and the active bodies being distributed at intervals along second direction; and word lines, located in the insulator and located on sides of respective bit lines facing away from the base substrate, the word lines being distributed at intervals along second direction and extending along first direction, and only one word line being arranged between two adjacent active bodies in second direction.

Abstract: The embodiments of the present application provide a data consolidation analysis method and a data consolidation analysis method. The data consolidation analysis system includes: a first acquiring module, which is configured to acquire machine event data; a second acquiring module, which is configured to acquire production event data; a data processing module, which is connected with the first acquiring module and the second acquiring module and configured to acquire a raw process time of each product and a production capacity index of each batch of products; and an analyzing module, which is connected with the data processing module and configured to acquire a first matching relationship between the production capacity index of each batch of products and the raw process time of each product.

Abstract: In some embodiments, an imaging system is provided. The imaging system comprises an image sensor, a light source, control circuitry, and function logic. The image sensor comprises a pixel array that includes a plurality of polarization pixel cells and a plurality of time-of-flight pixel cells. The light source is configured to emit light pulses to an object. The control circuitry is coupled to the light source and the pixel array, and is configured to synchronize a timing of the emission of the light pulses with sensing of photons reflected from the object by the plurality of time-of-flight pixel cells to generate depth information. The function logic is configured to determine a set of ambiguous surface normals using signals generated by the plurality of polarization pixel cells, and to disambiguate the set of ambiguous surface normals using the depth information to generate a three-dimensional shape image.

Abstract: A manufacturing method of a capacitive structure includes: providing a semiconductor base; forming a first mask layer on the semiconductor base, the first mask layer having a plurality of first round hole patterns distributed uniformly; forming first openings distributed uniformly on the semiconductor base by etching based on the first round hole patterns; forming a second mask layer on one side, away from the semiconductor base, of the first openings, and forming a plurality of second round hole patterns on the second mask layer; forming second openings distributed uniformly on the semiconductor base by etching based on the second round hole patterns, and meanwhile continuously etching the first openings; and etching the first openings and the second openings to form capacitive holes, and depositing a lower electrode layer, a dielectric layer and an upper electrode layer within the capacitive holes to form the capacitive structure.

Abstract: Embodiment relates to the field of semiconductor technologies, and proposes a semiconductor device and a fabrication method thereof. The semiconductor device includes: a substrate, a semiconductor structure, an insulating layer, and a conductive layer. The semiconductor structure is positioned on a side of the substrate and includes a first semiconductor structure and a second semiconductor structure, wherein the first semiconductor structure and the second semiconductor structure form a PN junction. The insulating layer is positioned on a side of the semiconductor structure facing away from the substrate. The conductive layer is positioned on a side of the insulating layer facing away from the substrate, and an orthographic projection of the conductive layer on the substrate at least partially overlaps an orthographic projection of the PN junction on the substrate.

Abstract: A method for preparing method semiconductor device includes: providing a wafer on which a semiconductor structure is formed; forming a stacked film layer structure on a side of the semiconductor structure away from the wafer, a film layer in the stacked film layer structure farthest from the semiconductor structure being a first film layer; reducing a thickness of the first film layer so that the thickness of the first film layer at where orthographic projection of the first film layer on the wafer locates at an edge of the wafer is less than the thickness of the first film layer at where orthographic projection of the first film layer on the wafer locates in middle of the wafer; and patterning the stacked film layer structure to form through holes which communicate to the semiconductor structure.

Abstract: A data transmission circuit and method, and a storage device are provided. The data transmission circuit includes a serial-parallel conversion module, a comparison module, a data conversion module and a write circuit module. The serial-parallel conversion module receives a plurality of pieces of external data in batches and outputs initial parallel data according to the external data. The comparison module compares the received initial parallel data with global data to output a comparison result. The data conversion module, responsive to that the comparison result indicates that the preset threshold is exceeded, inverts the initial parallel data and transmits the inverted data to a data bus, and responsive to that the comparison result indicates that the preset threshold is not exceeded, transmits the initial parallel data to the data bus. The write circuit module transmits data on the data bus to a global data bus.