Patents Assigned to Tohoku University
  • Patent number: 8609059
    Abstract: To provide a production method for a nitride crystal, where a nitride crystal can be prevented from precipitating in a portion other than on a seed crystal and the production efficiency of a gallium nitride single crystal grown on the seed crystal can be enhanced. In a method for producing a nitride crystal by an ammonothermal method in a vessel containing a mineralizer-containing solution, out of the surfaces of said vessel and a member provided in said vessel, at least a part of the portion coming into contact with said solution is constituted by a metal or alloy containing one or more atoms selected from the group consisting of tantalum (Ta), tungsten (W) and titanium (Ti), and has a surface roughness (Ra) of less than 1.80 ?m.
    Type: Grant
    Filed: May 29, 2012
    Date of Patent: December 17, 2013
    Assignees: Mitsubishi Chemical Corporation, Tohoku University, The Japan Steel Works, Ltd.
    Inventors: Yutaka Mikawa, Makiko Kiyomi, Yuji Kagamitani, Toru Ishiguro, Yoshihiko Yamamura
  • Patent number: 8604571
    Abstract: The thermoelectric conversion efficiency of a thermoelectric conversion device is increased by increasing the figure of merit of a spin-Seebeck effect element. An inverse spin-Hall effect material is provided to at least one end of a thermal spin-wave spin current generating material made of a magnetic dielectric material so that a thermal spin-wave spin current is converted to generate a voltage in the above described inverse spin-Hall effect material when there is a temperature gradient in the above described thermal spin-wave spin current generating material and a magnetic field is applied using a magnetic field applying means.
    Type: Grant
    Filed: June 5, 2009
    Date of Patent: December 10, 2013
    Assignee: Tohoku University
    Inventors: Kenichi Uchida, Yosuke Kajiwara, Hiroyasu Nakayama, Eiji Saitoh
  • Patent number: 8600543
    Abstract: When a temperature of a semiconductor wafer is controlled to be a target temperature by raising the temperature of the semiconductor wafer, switching is performed so that a high-temperature circulating liquid at a temperature higher than the target temperature in a high-temperature tank is supplied into an inside-stage flow channel, and respective thermoelectric elements in a plurality of zones in a stage are controlled; and then, the temperature of the semiconductor wafer matches the target temperature and a desired in-plane temperature distribution of the semiconductor wafer is provided.
    Type: Grant
    Filed: November 9, 2009
    Date of Patent: December 3, 2013
    Assignees: Kelk Ltd., Tohoku University
    Inventors: Hiroaki Takechi, Norio Takahashi, Wataru Kiyosawa, Shigenao Maruyama, Atsuki Komiya
  • Patent number: 8598563
    Abstract: A phase-change material, which has a high crystallization temperature and is superior in thermal stability of the amorphous phase, which has a composition of the general chemical formula GexMyTe100-x-y wherein M indicates one type of element which is selected from the group which comprises Al, Si, Cu, In, and Sn, x is 5.0 to 50.0 (at %) and y is 4.0 to 45.0 (at %) in range, and x and y are selected so that 40 (at %)?x+y?60 (at %). This phase-change material further contains, as an additional element L, at least one type of element L which is selected from the group which comprises N, O, Al, Si, P, Cu, In, and Sn in the form of GexMyLzTe100-x-y-z wherein z is selected so that 40 (at %)?x+y+z?60 (at %).
    Type: Grant
    Filed: September 9, 2010
    Date of Patent: December 3, 2013
    Assignee: Tohoku University
    Inventors: Yuji Sutou, Junichi Koike, Yuta Saito, Toshiya Kamada
  • Patent number: 8592810
    Abstract: It is an object of the present invention to stably form an N-doped ZnO-based compound thin film. In the present invention, a gas containing oxygen and nitrogen and a nitrogen gas together with an organometallic material gas are supplied into a low-electron-temperature high-density plasma which is excited by microwave, thereby forming the N-doped ZnO-based compound thin film on a substrate as a film forming object.
    Type: Grant
    Filed: October 7, 2010
    Date of Patent: November 26, 2013
    Assignees: National University Corporation Tohoku University, Rohm Co., Ltd.
    Inventors: Tadahiro Ohmi, Hirokazu Asahara, Atsutoshi Inokuchi
  • Publication number: 20130309828
    Abstract: Provided is a semiconductor device manufacturing method, comprising forming a first sacrificial layer that contacts at least a portion of a first semiconductor layer and has a higher solid solubility for impurities included in the first semiconductor layer than the first semiconductor layer; annealing the first sacrificial layer and the first semiconductor layer; removing the first sacrificial layer through a wet process; after removing the first sacrificial layer, performing at least one of forming an insulating layer that covers at least a portion of the first semiconductor layer and etching a portion of the first semiconductor layer; and forming an electrode layer that is electrically connected to the first semiconductor layer.
    Type: Application
    Filed: July 24, 2013
    Publication date: November 21, 2013
    Applicants: Tohoku University, Advanced Power Device Research Association
    Inventors: Hiroshi KAMBAYASHI, Akinobu TERAMOTO, Tadahiro OHMI
  • Publication number: 20130308023
    Abstract: A transistor (24) which acts as a load-current source for a source follower amplifying transistor (22) for outputting a pixel signal to a pixel output line (40) is provided in each picture element (10), whereby a high bias current is prevented from passing through the high-resistance pixel output line (40), so that a variation in an offset voltage among picture elements is suppressed. Inclusion of the high-resistance pixel output line (40) into the source follower amplification circuit is also avoided, whereby the gain characteristics are prevented from deterioration. Thus, the S/N ratio of the picture element is improved so as to enhance the quality of the images.
    Type: Application
    Filed: February 8, 2011
    Publication date: November 21, 2013
    Applicants: Shimadzu Corporation, Tohoku University
    Inventors: Shigetoshi Sugawa, Hideki Tominaga, Kenji Takubo, Yasushi Kondo
  • Patent number: 8588264
    Abstract: An ultrashort pulse/ultra-high power laser diode with a simple structure and configuration is provided. In a method of driving a laser diode, the laser diode is driven by a pulse current which is 10 or more times higher than a threshold current value. The width of the pulse current is preferably 10 nanoseconds or less, and the value of the pulse current is specifically 0.4 amperes or over.
    Type: Grant
    Filed: August 18, 2011
    Date of Patent: November 19, 2013
    Assignees: Sony Corporation, Tohoku University
    Inventors: Hiroyuki Yokoyama, Shunsuke Kono, Tomoyuki Oki, Masao Ikeda, Takao Miyajima, Hideki Watanabe
  • Publication number: 20130295461
    Abstract: Since pseudo-capacitance transition metal oxides (for example, MnO2) have high theoretical capacitance and are eco-friendly, inexpensive, and abundant in the natural world, pseudo-capacitance transition metal oxides are gaining attention as promising capacitor electrode materials. However, pseudo-capacitance transition metal oxides have relatively low electronic conductivity and limited charging and discharging rates, and a it is therefore difficult to use pseudo capacitance transition metal oxides for high output power applications. If a plating process accompanying a liquid-phase precipitation reaction is performed on a nanoporous metal such as nanoporous gold (NPG) to deposit a ceramic material (for example, MnO2 or SnO2) on the surface of a core metal (for example, NPG), a nanoporous metal-ceramic composite having particular structural characteristics and comprising a metal core part and a ceramic deposition part can be obtained.
    Type: Application
    Filed: December 21, 2011
    Publication date: November 7, 2013
    Applicant: Tohoku University
    Inventors: Mingwei Chen, Xingyou Lang, Takeshi Fujita
  • Patent number: 8575249
    Abstract: There is provided a polygermane compound forming a film having a high refractive index and thermal stability, and containing a sulfur atom-containing organic group as a group bonded to a germanium atom. A polygermane compound comprising a sulfur atom-containing organic group as a group bonded to a germanium atom, in which the sulfur atom-containing organic group is a group of Formula [1]: -L-Z??[1] where L is a single bond, a C1-6 alkylene group, or a C4-20 arylene group optionally substituted with a C1-6 alkyl group; and Z is a C1-20 sulfide group, a C1-14 cyclic sulfide group optionally substituted with a C1-6 alkyl group, a C2-20 alkyl group containing a sulfide bond, or a C5-20 aralkyl group containing a sulfide bond, with a proviso that when L is a single bond, Z is not a C1-20 sulfide group.
    Type: Grant
    Filed: February 16, 2011
    Date of Patent: November 5, 2013
    Assignees: Nissan Chemical Industries, Ltd., Tohoku University
    Inventors: Takehiro Nagasawa, Akira Watanabe, Tokuji Miyashita
  • Patent number: 8573151
    Abstract: A conventional microwave plasma processing apparatus, even when krypton (Kr) is used as a plasma-generation gas, can only obtain an oxide film or a nitride film having the same level of characteristics as those obtained when a rare gas such as argon (Ar) is used as a plasma-generation gas. Accordingly, instead of forming a dielectric window of a microwave plasma processing apparatus with only a ceramic member, a planarization film capable of obtaining a stoichiometric SiO2 composition by thermal treatment is coated on one of a plurality of surfaces of the ceramic member, the surface facing a process space, and then thermally-treated, thereby forming a planarization insulation film having a very flat and dense surface. A corrosion-resistant film is formed on the planarization insulation film.
    Type: Grant
    Filed: February 26, 2009
    Date of Patent: November 5, 2013
    Assignees: Tokyo Electron Limited, Tohoku University
    Inventors: Tadahiro Ohmi, Masaki Hirayama, Tetsuya Goto, Yasuyuki Shirai, Masafumi Kitano, Kohei Watanuki, Takaaki Matsuoka, Shigemi Murakawa
  • Patent number: 8575626
    Abstract: A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.
    Type: Grant
    Filed: July 19, 2012
    Date of Patent: November 5, 2013
    Assignees: Sony Corporation, Tohoku University
    Inventors: Hideki Watanabe, Takao Miyajima, Masao Ikeda, Hiroyuki Yokoyama, Tomoyuki Oki, Masaru Kuramoto
  • Patent number: 8575023
    Abstract: A semiconductor device manufacturing method which achieves a contact of a low resistivity is provided. In a state where a first metal layer in contact with a semiconductor is covered with a second metal layer for preventing oxidation, only the first metal layer is silicided to form a silicide layer with no oxygen mixed therein. As a material of the first metal layer, a metal having a work function difference of a predetermined value from the semiconductor is used. As a material of the second metal layer, a metal which does not react with the first metal layer at an annealing temperature is used.
    Type: Grant
    Filed: October 23, 2009
    Date of Patent: November 5, 2013
    Assignees: National University Corporation Tohoku University, Foundation for Advancement of International Science
    Inventors: Tadahiro Ohmi, Akinobu Teramoto, Tatsunori Isogai, Hiroaki Tanaka
  • Patent number: 8569805
    Abstract: A floating diffusion (331) is created substantially at center of the light-receiving surface of an embedded photodiode (31), with a gate electrode of a transfer transistor (32) surrounding the floating diffusion. The concentration (or depth) of impurities in a p+-type semiconductor region, n-type semiconductor region or p-well region is changed in an inclined form so that a potential gradient being inclined downwards from the circumference to the center is created when an appropriate bias voltage is applied to the pn junction. The photocharges produced by incident light are rapidly moved along the potential gradient toward the center. Even in the case where the photocharge storage time is short, the photocharges can be efficiently collected since the maximum moving distance from the circumference of the photodiode (31) to the floating diffusion (331). Thus, the photocharges produced by the photodiode (31) are efficiently utilized, whereby the detection sensitivity is improved.
    Type: Grant
    Filed: September 4, 2008
    Date of Patent: October 29, 2013
    Assignees: Tohoku University, Shimadu Corporation
    Inventors: Shigetoshi Sugawa, Yasushi Kondo, Hideki Tominaga
  • Patent number: 8568577
    Abstract: Provided is a magnetron sputtering apparatus that increases an instantaneous plasma density on a target to improve a film forming rate. The magnetron sputtering apparatus includes a substrate to be processed, a target installed to face the substrate and a rotary magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma loops are formed on a target surface. The plasma loops are generated, move and disappear in an axis direction of the rotary magnet according to a rotation of the rotary magnet.
    Type: Grant
    Filed: April 4, 2008
    Date of Patent: October 29, 2013
    Assignees: National University Corporation Tohoku University, Tokyo Electron Limited
    Inventors: Tadahiro Ohmi, Tetsuya Goto, Takaaki Matsuoka
  • Patent number: 8568288
    Abstract: Provided is a slide device which can reduce a frictional force more than a conventional slide device when used in an aqueous liquid containing a blood component. In a slide device which includes: a fixed-side slide member having a slide surface; and a rotary-side slide member having a slide surface, the slide device being used in an aqueous liquid containing a blood component in a state where the slide surface of the fixed-side slide member and the slide surface of the rotary-side slide member face each other in an opposed manner, at least one of the fixed-side slide member and the rotary-side slide member is formed of a member which is made of a material which contains silicon and has hydrate of silicon oxide on the slide surface thereof.
    Type: Grant
    Filed: April 18, 2012
    Date of Patent: October 29, 2013
    Assignees: Sun Medical Technology Research Corporation, Tohoku University
    Inventors: Keiichiro Kaneshima, Takayuki Miyakoshi, Tomoya Kitano, Hideki Kanebako, Shinji Kobayashi, Koshi Adachi, Koki Kanda, Daisuke Suzuki
  • Patent number: 8568556
    Abstract: The plasma processing apparatus includes: a processing container including a metal; an electromagnetic wave source outputting an electromagnetic wave; a dielectric plate facing an inner wall of the processing container and transmitting the electromagnetic wave, which is output from the electromagnetic wave source, into the processing container; and a groove formed in an inner surface of the processing container and functioning as a propagation disturbing portion. If a low frequency microwave is supplied, the propagation of a conductor surface wave can be suppressed by the groove.
    Type: Grant
    Filed: June 11, 2008
    Date of Patent: October 29, 2013
    Assignees: Tokyo Electron Limited, Tohoku University
    Inventors: Masaki Hirayama, Tadahiro Ohmi
  • Publication number: 20130277716
    Abstract: The purpose of the present invention is to improve the efficiency of conversion between terahertz electromagnetic wave energy and direct current energy via plasma waves in a terahertz electromagnetic wave conversion device with a field effect transistor structure. This invention has an HEMT structure having a substrate, an electron transit layer, an electron supply layer, a source and a drain, and includes a first and second group of gates. The gate length of each finger of the first group of gates is narrower than the gate length of each finger of the second group of gates, and each finger of each group of gates is disposed between the source and the drain on the same cycle. A first and second distance from each finger of the first group of gates to two fingers of the second group of gates adjacent to each finger are unequal lengths.
    Type: Application
    Filed: December 3, 2010
    Publication date: October 24, 2013
    Applicants: Tohoku University, Universite Montpellier 2, CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)
    Inventors: Taiichi Otsuji, Viacheslav Popov, Wojciech Knap, Yahya Moubarak Meziani, Nina Diakonova, Dominique Coquillat, Frederic Teppe, Denis Fateev, Jesus Enrique Velazquez Perez
  • Patent number: 8564293
    Abstract: The invention relates to a method for changing spin relaxation, a method for detecting a spin current, and a spintronic device using spin relaxation, and spin relaxation is changed through injection of a spin current. A spin current 4 is injected into a material 1 in a certain spin state, so that the spin relaxation time can be controlled.
    Type: Grant
    Filed: March 14, 2008
    Date of Patent: October 22, 2013
    Assignee: Tohoku University
    Inventors: Kazuya Ando, Kazuya Harii, Kohei Sasage, Eiji Saitoh
  • Patent number: 8562320
    Abstract: A resin molding device which molds a resin tube 1 from a molten resin has a tube molding portion 14 and a spindle 15 as jigs which define inner and outer diameters of the resin tube.
    Type: Grant
    Filed: March 18, 2008
    Date of Patent: October 22, 2013
    Assignees: National University Corporation Tohoku University, Nichias Corporation
    Inventors: Tadahiro Ohmi, Yasuyuki Shirai, Jiro Yamanaka, Kengo Iwahara, Kouji Fukae