Patents Assigned to Tohoku University
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Patent number: 8389867Abstract: For the purpose of providing a semiconductor element built-in type multilayered circuit board in which a semiconductor element is closely joined to a recess of an insulating substrate to effectively disperse heat generated from the semiconductor element through the insulating substrate at a working temperature region of the semiconductor element circuit board, to surely conduct an electrical connection of an electronic part such as semiconductor element or the like in a short wiring and to enable the high density mounting of semiconductor elements, miniaturization and increase of working speed, there is proposed a semiconductor element built-in type multilayered circuit board formed by laminating a plurality of semiconductor element built-in type boards each comprising an insulating substrate and a semiconductor element accommodated in a recess formed therein, characterized in that a difference between a linear expansion coefficient of the insulating substrate and a linear expansion coefficient of the semiconType: GrantFiled: September 29, 2006Date of Patent: March 5, 2013Assignees: Ibiden Co., Ltd., National University Corporation Tohoku UniversityInventors: Ryo Enomoto, Tadahiro Ohmi, Akihiro Morimoto
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Patent number: 8389686Abstract: The present invention provides a collagen crosslinking agent superior in biocompatibility that is free from the damage by UV irradiation and also from the problems of toxicity caused by residual monomer or unreacted functional groups. Provided is a noncovalent collagen crosslinking agent (for fibrous protein collagen), comprising a spacer of a polyvalent alcohol having two or more OH groups at the terminals and arms of collagen peptides formed of repetitions of three amino acids, the arms being bound via the OH groups to the spacer.Type: GrantFiled: May 1, 2009Date of Patent: March 5, 2013Assignees: Osaka University, Tohoku UniversityInventors: Mitsuru Akashi, Kohji Nishida, Michiya Matsusaki, Akira Kubota, Tomonori Waku
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Patent number: 8383194Abstract: To provide a film forming apparatus capable of using an expensive organic EL raw material without waste and uniformly forming an organic EL film over a long period of time and a jig therefor. A plurality of ejection vessels are provided for a single raw material container section. A switcher is provided for carrying out switching from a piping system, which evaporates an organic EL raw material in the raw material container section and supplies it along with a carrier gas to one of the ejection vessels, to a piping system for another ejection vessel. In this manner, by supplying the organic EL raw material from the single raw material container section to the plurality of ejection vessels by switching, the use efficiency of the organic EL raw material can be improved.Type: GrantFiled: September 5, 2006Date of Patent: February 26, 2013Assignees: Tohoku University, Tokyo Electron LimitedInventors: Tadahiro Ohmi, Takaaki Matsuoka, Shozo Nakayama, Hironori Ito
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Patent number: 8383677Abstract: A nerve-regenerating agent comprising, as an active ingredient, arachidonic acid and/or a compound containing arachidonic acid as a constituent fatty acid.Type: GrantFiled: December 27, 2007Date of Patent: February 26, 2013Assignees: Suntory Holdings Limited, Tohoku UniversityInventors: Masanori Kontani, Yoshiyuki Ishikura, Noriko Oosumi, Motoko Maekawa
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Patent number: 8372200Abstract: Occurrence of a back-flow of plasma or ignition of gas for plasma excitation in a longitudinal hole portion can be prevented more completely, and a shower plate in which efficient plasma excitation is possible is provided. In shower plate 105, which is arranged in processing chamber 102 of a plasma processing apparatus and discharges gas for plasma excitation into processing chamber, porous-gas passing body 114 having a pore that communicates in the gas flow direction is fixed onto longitudinal hole 112 used as a discharging path of gas for plasma excitation. The pore diameter of a narrow path in a gas flowing path formed of a pore, which communicates to porous-gas passing body 114, is 10 ?m or lower.Type: GrantFiled: June 13, 2007Date of Patent: February 12, 2013Assignees: Tokyo Electron Ltd., National University Corporation Tohoku UniversityInventors: Masahiro Okesaku, Tetsuya Goto, Tadahiro Ohmi, Kiyotaka Ishibashi
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Patent number: 8362567Abstract: In a semiconductor device, the degree of flatness of 0.3 nm or less in terms of a peak-to-valley (P-V) value is realized by rinsing a silicon surface with hydrogen-added ultrapure water in a light-screened state and in a nitrogen atmosphere and a contact resistance of 10?11 ?cm2 or less is realized by setting a work function difference of 0.2 eV or less between an electrode and the silicon. Thus, the semiconductor device can operate on a frequency of 10 GHz or higher.Type: GrantFiled: July 12, 2007Date of Patent: January 29, 2013Assignees: National University Corporation Tohoku University, Foundation for Advancement of International ScienceInventors: Tadahiro Ohmi, Akinobu Teramoto, Rihito Kuroda
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Patent number: 8361929Abstract: The present invention provides a method and a composition for restoring pollen fertility by suppressing formation insufficiency in a pollen formation process due to a high-temperature or low-temperature stress. The present invention provides a fertility restorative agent comprising an auxin as an active ingredient, and a method for restoring the fertility of a plants of the family Poaceae, comprising spreading an auxin. Moreover, the present invention provides a fertility restorative agent containing as an active ingredient a substance which inhibits auxin action, and a method for restoring the fertility of rice plant, including spreading a substance which inhibits auxin action.Type: GrantFiled: July 8, 2011Date of Patent: January 29, 2013Assignee: Tohoku UniversityInventors: Atsushi Higashitani, Masao Watanabe, Tadashi Sakata
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Patent number: 8355564Abstract: A plurality of images (I, J) of an object (M) when viewed from different viewpoints are taken in. One of the images is set as a standard image (I), and the other image is set as a reference image (J). One-dimensional pixel data strings with a predetermined width (W) are cut out from the standard image (I) and the reference image (J) along epipolar lines (EP1, EP2) calculated from a camera parameter (CPR) and the reference point (p). Calculating a phase-only correlation function from the cut one-dimensional pixel data strings will obtain a correlation peak position (Pa1). A positional shift amount (d) from the correlation peak position (Pa1) is obtained. A search is made for a corresponding point (q) corresponding to the reference point (p) based on this position shift amount (d).Type: GrantFiled: November 9, 2007Date of Patent: January 15, 2013Assignees: Azbil Corporation, National University Corporation Tohoku UniversityInventors: Takafumi Aoki, Takuma Shibahara, Hiroshi Nakajima, Koji Kobayashi, Atsushi Katsumata
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Patent number: 8349652Abstract: There is provided a three-dimensional integrated circuit manufacturing method for temporarily attaching a chip to a transcription substrate, and securely detaching the chip from the transcription substrate when the chip is transferred to a supporting substrate. When a chip is temporarily attached to a transcription substrate, by evaporating a liquid existing between the chip and the transcription substrate, the solids of the chip and the transcription substrate can be attached to each other. Accordingly, the chip can be temporarily attached to the transcription substrate so as not to be deviated from its own position. Further, by setting adhesive strength between the chip and a supporting substrate to be higher than that between the chip and the transcription substrate, the chip can be securely detached from the transcription substrate when the chip is transferred from the transcription substrate to the supporting substrate.Type: GrantFiled: March 10, 2010Date of Patent: January 8, 2013Assignees: Tokyo Electron Limited, Tohoku UniversityInventors: Mitsumasa Koyanagi, Takafumi Fukushima, Masahiko Sugiyama
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Patent number: 8344122Abstract: Mainly provided is a technique for directly identifying the genotype at locus Rf17 based on the specific base sequence data thereof. Also provided is a technique for artificially constructing a fertility-restored line. A method of restoring the fertility of CW-type cytoplasmic male sterile rice by inhibiting or reducing the expression of a gene comprising the base sequence represented by SEQ ID NO:2 in the above-described rice, and a method for determining the presence or absence of gene Rf17, which is a fertility restorer gene for CW-type cytoplasmic male sterility, comprising identifying a single nucleotide polymorphism (SNP) in the base at the 1812 position of the base sequence represented by SEQ ID NO:1 in the rice to be examined.Type: GrantFiled: February 21, 2009Date of Patent: January 1, 2013Assignee: Tohoku UniversityInventors: Kinya Toriyama, Sota Fujii
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Patent number: 8336399Abstract: A sensor system includes a first sensing device that includes a sensor, and first and second surrounding portions that surround the sensor at least partially, a second sensing device that comprises a sensor, and first and second surrounding portions that surround the sensor at least partially, wherein at least one of a combination of shapes of the first and second surrounding portions of the respective first and second sensing devices and a combination of physical properties of the first and second surrounding portions of the respective first and second sensing devices is configured such that a detection characteristic of the first sensing device is different from a detection characteristic of the second sensing device.Type: GrantFiled: October 13, 2010Date of Patent: December 25, 2012Assignees: Tohoku University, Kabushiki Kaisha Toyota Chuo Kenkyusho, Toyota Jidosha Kabushiki KaishaInventors: Masanori Muroyama, Masayoshi Esashi, Shuji Tanaka, Sakae Matsuzaki, Mitsutoshi Makihata, Yutaka Nonomura, Motohiro Fujiyoshi, Takahiro Nakayama, Ui Yamaguchi, Hitoshi Yamada
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Patent number: 8337452Abstract: A fluid injection device includes: a pulse generation section that includes a fluid chamber whose volume is changeable, and an inlet flow passage and an outlet flow passage that are connected to the fluid chamber; a first connection flow passage connected to the outlet flow passage, having an end portion; a second connection flow passage connected to the inlet flow passage; a fluid injection opening formed at the end portion of the first connection flow passage, having a diameter smaller than the diameter of the outlet flow passage; a connection flow passage tube including the first connection flow passage and having rigidity adequate to transmit pulses of fluid flowing from the fluid chamber to the fluid injection opening; and a pressure generation section that supplies fluid to the inlet flow passage.Type: GrantFiled: February 2, 2011Date of Patent: December 25, 2012Assignees: Seiko Epson Corporation, Tohoku UniversityInventors: Takeshi Seto, Kazuo Kawasumi, Kazuyoshi Takayama, Seyed Hamid Reza Hosseini
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Publication number: 20120320666Abstract: There is provided a magnetoresistive element whose magnetization direction is stable in a direction perpendicular to the film surface and whose magnetoresistance ratio is controlled, as well as magnetic memory using such a magnetoresistive element. By having the material of a ferromagnetic layer forming the magnetoresistive element comprise a ferromagnetic material containing at least one type of 3d transition metal, or a Heusler alloy, to control the magnetoresistance ratio, and by controlling the thickness of the ferromagnetic layer on an atomic layer level, the magnetization direction is changed from being in-plane with the film surface to being perpendicular to the film surface.Type: ApplicationFiled: February 14, 2011Publication date: December 20, 2012Applicants: Tohoku University, Hitachi, Ltd.Inventors: Hideo Ohno, Shoji Ikeda, Fumihiro Matsukura, Masaki Endoh, Shun Kanai, Katsuya Miura, Hiroyuki Yamamoto
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Patent number: 8331140Abstract: The present invention provides a current injection-type magnetic domain wall-motion device which requires no external magnetic field for reversing the magnetization direction of a ferromagnetic body and which has low power consumption. The current injection-type magnetic domain wall-motion device includes a microjunction structure including two magnetic bodies (a first magnetic body 1 and a second magnetic body 2) having magnetization directions antiparallel to each other and a third magnetic body 3 sandwiched therebetween. The magnetization direction of the device is controlled in such a manner that a pulse current (a current density of 104-107 A/cm2) is applied across junction interfaces present in the microjunction structure such that a magnetic domain wall is moved by the interaction between the magnetic domain wall and the current in the same direction as that of the current or in the direction opposite to that of the current.Type: GrantFiled: January 14, 2005Date of Patent: December 11, 2012Assignees: Japan Science and Technology Agency, Tohoku UniversityInventors: Hideo Ohno, Fumihiro Matsukura, Daichi Chiba, Michihiko Yamanouchi
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Patent number: 8329483Abstract: A method for manufacturing a bi-section semiconductor laser device includes the steps of (A) forming a stacked structure obtained by stacking, on a substrate in sequence, a first compound semiconductor layer of a first conductivity type, a compound semiconductor layer that constitutes a light-emitting region and a saturable absorption region, and a second compound semiconductor layer of a second conductivity type; (B) forming a belt-shaped second electrode on the second compound semiconductor layer; (C) forming a ridge structure by etching at least part of the second compound semiconductor layer using the second electrode as an etching mask; and (D) forming a resist layer for forming a separating groove in the second electrode and then forming the separating groove in the second electrode by wet etching so that the separating groove separates the second electrode into a first portion and a second portion.Type: GrantFiled: March 18, 2010Date of Patent: December 11, 2012Assignees: Sony Corporation, Tohoku UniversityInventors: Hideki Watanabe, Takao Miyajima, Masao Ikeda, Hiroyuki Yokoyama, Tomoyuki Oki, Masaru Kuramoto
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Patent number: 8328928Abstract: Metal nanoink (100) for bonding an electrode of a semiconductor die and an electrode of a substrate and/or bonding an electrode of a semiconductor die and an electrode of another semiconductor die by sintering under pressure is produced by injecting oxygen into an organic solvent (105) in the form of oxygen nanobubbles (125) or oxygen bubbles (121) either before or after metal nanoparticles (101) whose surfaces are coated with a dispersant (102) are mixed into the organic solvent (105). Bumps are formed on the electrode of the semiconductor die and the electrode of the substrate by ejecting microdroplets of the metal nanoink (100) onto the electrodes, the semiconductor die is turned upside down and overlapped in alignment over the substrate, and then, the metal nanoparticles of the bumps are sintered under pressure by pressing and heating the bumps between the electrodes. As a result, generation of voids during sintering under pressure is minimized.Type: GrantFiled: July 8, 2009Date of Patent: December 11, 2012Assignees: Shinkawa Ltd., Tohoku University, Ulvac, Inc.Inventors: Toru Maeda, Tetsuro Tanikawa, Akinobu Teramoto, Masaaki Oda
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Patent number: 8330709Abstract: An illuminating device capable of improving display luminance while decreasing light leakage in a range with a large view angle and a display unit are provided. In a light modulation device bonded to a light guide plate, a light modulation layer containing a bulk and microparticles is provided. Both the bulk and the microparticles have optical anisotropy, and each response speed to an electric field is different from each other. Thereby, by controlling the electric field, each optical axis orientation of the bulk and the microparticles is able to correspond with each other, or is able to be different from each other.Type: GrantFiled: November 1, 2010Date of Patent: December 11, 2012Assignees: Sony Corporation, Tohoku UniversityInventors: Tatsuo Uchida, Takahiro Ishinabe, Tohru Kawakami, Kentaro Okuyama, Harumi Sato
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Patent number: 8327796Abstract: Provided is a plasma processing apparatus having a coaxial waveguide structure in which characteristic impedance of an input side and characteristic impedance of an output side are different. A microwave plasma processing apparatus, which plasma-processes a substrate by exciting a gas by using a microwave, includes: a processing container; a microwave source, which outputs a microwave, a first coaxial waveguide, which transmits the microwave output from the microwave source; and a dielectric plate, which is adjacent to the first coaxial waveguide while facing an inner side of the processing container, and emits the microwave transmitted from the first coaxial waveguide into the processing container. A thickness ratio between an inner conductor and an outer conductor of the first coaxial waveguide is not uniform along a longitudinal direction.Type: GrantFiled: June 3, 2009Date of Patent: December 11, 2012Assignees: Tokyo Electron Limited, Tohoku UniversityInventors: Masaki Hirayama, Tadahiro Ohmi
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Patent number: 8323808Abstract: There is provided a perpendicular magnetic recording medium according to which both the thermal stability of the magnetization is good and writing with a magnetic head is easy, and moreover the SNR is improved. In the case of a perpendicular magnetic recording medium comprising a nonmagnetic substrate 1, and at least a nonmagnetic underlayer 2, a magnetic recording layer 3 and a protective layer 4 formed in this order on the nonmagnetic substrate 1, the magnetic recording layer 3 comprises a low Ku region 31 layer having a perpendicular magnetic anisotropy constant (Ku value) of not more than 1×105 erg/cm3, and a high Ku region 32 layer having a Ku value of at least 1×106 erg/cm3. Moreover, the magnetic recording layer 3 is made to have therein nonmagnetic grain boundaries that contain a nonmagnetic oxide and magnetically isolate crystal grains, which are made of a ferromagnetic metal, from one another.Type: GrantFiled: January 10, 2005Date of Patent: December 4, 2012Assignees: Fuji Electric Co., Ltd., National University Corporation Tohoku UniversityInventors: Osamu Kitakami, Yutaka Shimada, Satoshi Okamoto, Takehito Shimatsu, Hajime Aoi, Hiroaki Muraoka, Yoshihisa Nakamura, Hiroyuki Uwazumi, Tadaaki Oikawa
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Publication number: 20120289393Abstract: A TiO2—SiO2 glass ingot having a desired TiO2 concentration is fabricated, a sample is cut from the TiO2—SiO2 glass ingot, OH concentration C(OH), TiO2 concentration C(TiO2) and fictive temperature TF of the sample are measured, and zero-CTE temperature T(zero-CTE) is calculated from the measured C(OH), C(TiO2) and TF. A judgment is made as to whether the difference ?T between the zero-CTE temperature T(zero-CTE) and a target value is within a predetermined range. When the difference ?T is within the predetermined range, it is judged that the TiO2—SiO2 glass ingot has a desired zero-CTE temperature; when the difference ?T is not within the range, a production condition for the TiO2—SiO2 glass ingot is corrected on the basis of the difference ?T.Type: ApplicationFiled: February 24, 2011Publication date: November 15, 2012Applicant: Tohoku UniversityInventors: Junichi Kushibiki, Mototaka Arakawa