Patents Assigned to Tohoku University
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Patent number: 8754048Abstract: Disclosed is a Volvox carteri-derived light-receiving channel rhodopsin with an improved expression efficiency on a cell membrane. Specifically disclosed is a modified Volvox carteri-derived light-receiving channel rhodopsin protein. The protein is modified to contain an N-terminal region of Chlamydomonas reinhardtii-derived channel rhodopsin-1 at the N-terminal of the Volvox carteri-derived light-receiving channel rhodopsin protein, wherein the N-terminal region is involved in cell membrane-localized expression and contains no transmembrane domain of the Chlamydomonas reinhardtii-derived channel rhodopsin-1.Type: GrantFiled: August 10, 2010Date of Patent: June 17, 2014Assignee: Tohoku UniversityInventors: Hiroshi Tomita, Eriko Sugano
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Publication number: 20140159177Abstract: A magnetoresistive element according to an embodiment includes: a base layer; a first magnetic layer formed on the base layer, and including a first magnetic film having an axis of easy magnetization in a direction perpendicular to a film plane, the first magnetic film including MnxGa100-x (45?x<64 atomic %); a first nonmagnetic layer formed on the first magnetic layer; and a second magnetic layer formed on the first nonmagnetic layer, and including a second magnetic film having an axis of easy magnetization In a direction perpendicular to a film plane, the second magnetic film including MnyGa100-y (45?y<64 atomic %). The first and second magnetic layers include different Mn composition rates from each other, a magnetization direction of the first magnetic layer is changeable by a current flowing between the first magnetic layer and the second magnetic layer via the first nonmagnetic layer.Type: ApplicationFiled: February 18, 2014Publication date: June 12, 2014Applicants: WPI-AIMR, Tohoku University, Kabushiki Kaisha ToshibaInventors: Tadaomi DAIBOU, Junichi Ito, Tadashi Kai, Minoru Amano, Hiroaki Yoda, Terunobu Miyazaki, Shigemi Mizukami, Koji Ando, Kay Yakushiji, Shinji Yuasa, Hitoshi Kubota, Akio Fukushima, Taro Nagahama, Takahide Kubota
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Patent number: 8751200Abstract: A certain component of an input time series signal (hereinafter referred to as input) is assumed as a cycle time-variable time series signal and a prediction model for predicting a value of the input after the predetermined time is produced, and the value of the input after the predetermined time is predicted and outputted using the prediction model.Type: GrantFiled: May 20, 2011Date of Patent: June 10, 2014Assignee: Tohoku UniversityInventors: Yoshihiro Takai, Noriyasu Homma, Masao Sakai
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Publication number: 20140151853Abstract: In the plasma-based ion implantation for accelerating positive ions of a plasma and implanting the positive ions into a substrate to be processed on a holding stage in a processing chamber where the plasma has been excited, ion implantation is achieved in the following manner: an RF power having a frequency of 4 MHz or greater is applied to the holding stage to cause a self-bias voltage to generate on the surface of the substrate. The RF power is applied a plurality of times in the form of pulses.Type: ApplicationFiled: February 4, 2014Publication date: June 5, 2014Applicant: National University Corporation Tohoku UniversityInventors: Tadahiro OHMI, Tetsuya GOTO
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Publication number: 20140145279Abstract: The present invention relates to a magnetoresistive element including a first magnetic layer, a second magnetic layer, a first nonmagnetic layer, a third magnetic layer. The first magnetic layer includes a magnetic film of MnxGey (77 atm %?x?82 atm %, 18 atm %?y?23 atm %, x+y=100 atm %). The first nonmagnetic layer is provided between the first magnetic layer and the second magnetic layer. The third magnetic layer is provided between the first magnetic layer and the first nonmagnetic layer or between the second magnetic layer and the first nonmagnetic layer, or is provided between the first magnetic layer and the first nonmagnetic layer and between the second magnetic layer and the first nonmagnetic layer. The third magnetic layer includes a Heusler alloy.Type: ApplicationFiled: January 30, 2014Publication date: May 29, 2014Applicants: Tohoku University, Kabushiki Kaisha ToshibaInventors: Yushi KATO, Tadaomi Daibou, Eiji Kitagawa, Takao Ochiai, Takahide Kubota, Shigemi Mizukami, Terunobu Miyazaki
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Patent number: 8735905Abstract: Provided is a method for producing inexpensive and high-quality aluminum nitride crystals. Gas containing N atoms is introduced into a melt of a Ga—Al alloy, whereby aluminum nitride crystals are made to epitaxially grow on a seed crystal substrate in the melt of the Ga—Al alloy. A growth temperature of aluminum nitride crystals is set at not less than 1000 degrees C. and not more than 1500 degrees C., thereby allowing GaN to be decomposed into Ga metal and nitrogen gas.Type: GrantFiled: July 14, 2011Date of Patent: May 27, 2014Assignees: Sumitomo Metal Mining Co., Ltd., Tohoku UniversityInventors: Hiroyuki Fukuyama, Masayoshi Adachi, Akikazu Tanaka, Kazuo Maeda
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Patent number: 8733281Abstract: A plasma processing apparatus includes: a processing chamber produced from a metal; a susceptor configured to mount a substrate; an electromagnetic wave source that supplies an electromagnetic wave; one or more dielectric member provided at an inner wall of the processing chamber, and configured to transmit the electromagnetic wave into an inside of the processing chamber; one or more metal electrode, wherein each metal electrode is installed on a bottom surface of each dielectric member such that a part of the each dielectric member is exposed to the inside of the processing chamber; and a surface wave propagating section which is a metal surface facing the susceptor, the surface wave propagating section being installed adjacent to the dielectric member and being exposed to the inside of the processing chamber. The surface wave propagating section and a bottom surface of the metal electrode are positioned on the same plane.Type: GrantFiled: December 26, 2012Date of Patent: May 27, 2014Assignees: Tokyo Electron Limited, Tohoku UniversityInventors: Masaki Hirayama, Tadahiro Ohmi, Takahiro Horiguchi
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Patent number: 8728338Abstract: There is provided with an etching method using an etching apparatus. Four arms can be positioned in a direction substantially from a center of the stage toward a peripheral portion with an angle difference of about 90°. Etchant is supplied to a first position nearest to the center of the object which is rotating, from a first etchant supply nozzle placed on a first arm. Etchant is further supplied to a second position second nearest to the center of the object, from a second etchant supply nozzle placed on a second arm. The second arm is substantially symmetrically positioned with respect to the first arm and the second arm has an angle difference of about 180° with respect to the first arm.Type: GrantFiled: May 6, 2013Date of Patent: May 20, 2014Assignee: National University Corporation Tohoku UniversityInventors: Tadahiro Ohmi, Tomotsugu Ohashi, Kazuhiro Yoshikawa, Tetsuro Yoshida, Teppei Uchimura, Kazuki Soeda
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Patent number: 8724974Abstract: A vaporizer, capable of stabilizing the behavior of pressure inside the vaporizer, includes a chamber having an inlet and an outlet, a heating device that heats the inside of the chamber, a partition wall structure 13 that is provided inside the vaporizer and partitions the liquid material inside the chamber into a plurality of sections, and liquid distribution portions 20 that are provided at the lower portion of the partition wall structure 13 and that allow liquid distribution among the sections partitioned by the partition wall structure 13, and the partition wall structure includes a grid-like, honeycomb-shaped, mesh-like, or pipe-shaped partition wall.Type: GrantFiled: August 1, 2012Date of Patent: May 13, 2014Assignees: Fujikin Incorporated, Tohoku UniversityInventors: Tadahiro Ohmi, Yasuyuki Shirai, Masaaki Nagase, Satoru Yamashita, Atsushi Hidaka, Ryousuke Dohi, Kouji Nishino, Nobukazu Ikeda, Keiji Hirao
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Patent number: 8716114Abstract: A semiconductor device manufacturing method includes exciting plasma, applying RF power onto a target substrate to generate substrate bias and performing an ion implantation plural times by applying the RF power in the form of pulses.Type: GrantFiled: February 14, 2013Date of Patent: May 6, 2014Assignees: National University Corporation Tohoku University, Tokyo Electron LimitedInventors: Tadahiro Ohmi, Tetsuya Goto, Akinobu Teramoto, Takaaki Matsuoka
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Patent number: 8709816Abstract: The present invention relates to a method for diagnosing, and treating renal disease in a patient by having a test performed for detecting or quantifying one or more renal disease markers present in a test blood sample from the patient; and administering treatment to improve renal function. In particular embodiments, the test performed quantifies cis-aconitate, and the patient is identified as having the renal disease when a concentration of cis-aconitate present in the patient's test blood sample is higher than that of a control. Methods of the present invention can allow diagnosis and treatment of patients with early stage renal disease, such as early stage renal failure. Another aspect of the present invention relates to methods for screening for a prophylactic/therapeutic agent for treating renal disease using one or more renal disease markers.Type: GrantFiled: September 3, 2010Date of Patent: April 29, 2014Assignees: Tohoku University, Keio UniversityInventors: Takaaki Abe, Tomoyoshi Soga
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Patent number: 8709939Abstract: A multilevel interconnect structure in a semiconductor device and methods for fabricating the same are described. The multilevel interconnect structure in the semiconductor device includes a first insulating layer formed on a semiconductor wafer, a Cu interconnect layer formed on the first insulating layer, a second insulating layer formed on the Cu interconnect layer, and a metal oxide layer formed at an interface between the Cu interconnect layer and the second insulating layer. The metal oxide layer is formed by immersion-plating a metal, such as Sn or Zn, on the Cu interconnect layer and then heat-treating the plated layer in an oxidizing atmosphere.Type: GrantFiled: October 2, 2012Date of Patent: April 29, 2014Assignees: Semiconductor Technology Academic Research Center, National University Corporation Tohoku UniversityInventors: Junichi Koike, Yoshito Fujii, Jun Iijima, Noriyoshi Shimizu, Kazuyoshi Maekawa, Koji Arita, Ryotaro Yagi, Masaki Yoshimaru
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Publication number: 20140103246Abstract: Disclosed are a method of producing fine particulate alkali metal niobate in a liquid phase system, wherein the size and shape of particles of the fine particulate alkali metal niobate can be controlled; and fine particulate alkali metal niobate having a controlled shape and size. Specifically disclosed are a method of producing particulate sodium-potassium niobate represented by the formula (1): NaxK(1-x)NbO3 (1), the method including four specific steps, wherein a high-concentration alkaline solution containing Na+ ion and K+ ion is used as an alkaline solution; and particulate sodium-potassium niobate having a controlled shape and size.Type: ApplicationFiled: December 19, 2013Publication date: April 17, 2014Applicants: Sakai Chemical Industry Co., Ltd., Fuji Ceramics Corporation, TOHOKU UniversityInventors: Atsushi MURAMATSU, Kiyoshi KANIE, Atsuki TERABE, Yasuhiro OKAMOTO, Hideto MIZUTANI, Satoru SUEDA, Hirofumi TAKAHASHI
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Patent number: 8691017Abstract: A heat equalizer includes a container structure having a heating block in which a working fluid is held for heating and vaporizing a material to be heated, a heater placed at the bottom of the container structure, and a material feed pipe allowing the outside and the inside of the container structure to communicate with each other. In the heating block, as a flow path in which the material to be heated flows, a main header pipe connected to the material feed pipe and extending in the horizontally, and a riser pipe branching from the main header pipe and extending vertically are formed. As a condensation path in which the working fluid is cooled and condensed, condensation holes formed respectively on the opposite sides of the riser pipe and extending horizontally, and a condensation pit formed under the riser pipe are formed. Between the condensation holes and the condensation pit, the main header pipe is placed.Type: GrantFiled: April 11, 2008Date of Patent: April 8, 2014Assignees: National University Corporation Tohoku University, Toshiba Mitsubishi—Electric Industrial Systems CorporationInventors: Tadahiro Ohmi, Masafumi Kitano, Hisaaki Yamakage, Yoshihito Yamada
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Patent number: 8691061Abstract: An electrode device for an electrochemical sensor chip includes an insulation sheet having an insulating property and including a top surface and a bottom surface opposite to each other in a thickness direction, and electrode members having a conductivity and held by the insulation sheet with the electrode members piercing the insulation sheet in a thickness direction, one ends of the electrode members located on the top surface side of the insulation sheet being connected to an analyte, the other ends located on the bottom surface side of the insulation sheet being connected to an electrodes of a transducer.Type: GrantFiled: December 5, 2011Date of Patent: April 8, 2014Assignees: Japan Aviation Electronics Industry, Limited, National University Corporation Tohoku UniversityInventors: Atsushi Suda, Tatsuo Kimura, Ryota Kunikata, Tomokazu Matsue
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Patent number: 8691062Abstract: An electrode device for an electrochemical sensor chip includes an insulation sheet having an insulating property and including a top surface and a bottom surface opposite to each other in a thickness direction, and electrode members having a conductivity and held by the insulation sheet with the electrode members piercing the insulation sheet in a thickness direction, one ends of the electrode members located on the top surface side of the insulation sheet being connected to an analyte, the other ends located on the bottom surface side of the insulation sheet being connected to an electrodes of a transducer, at least the one ends of the electrode members being made of a mixture of conductive particles and an insulating material.Type: GrantFiled: December 5, 2011Date of Patent: April 8, 2014Assignees: Japan Aviation Electronics Industry, Limited, National University Corporation Tohoku UniversityInventors: Atsushi Suda, Tatsuo Kimura, Ryota Kunikata, Kumi Inoue, Tomokazu Matsue
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Patent number: 8691402Abstract: A perpendicular magnetic recording medium according to which both the thermal stability of the magnetization is good and writing with a magnetic head is easy, and moreover the SNR is improved. In the case of a perpendicular magnetic recording medium comprising a nonmagnetic substrate (1), and at least a nonmagnetic underlayer (2), a magnetic recording layer (3), and a protective layer (4) formed in this order on the nonmagnetic substrate (1), the magnetic recording layer (3) comprises a low Ku region (31) layer having a perpendicular magnetic anisotropy constant (Ku value) of not more than 1×105 erg/cm3, and a high Ku region (32) layer having a Ku value of at least 1×106 erg/cm3. Moreover, the magnetic recording layer (3) is made to have therein nonmagnetic grain boundaries that contain a nonmagnetic oxide and magnetically isolate crystal grains, which are made of a ferromagnetic metal, from one another.Type: GrantFiled: November 2, 2012Date of Patent: April 8, 2014Assignees: Fuji Electric Co., Ltd., National University Corporation Tohoku UniversityInventors: Osamu Kitakami, Yutaka Shimada, Satoshi Okamoto, Takehito Shimatsu, Hajime Aoi, Hiroaki Muraoka, Yoshihisa Nakamura, Hiroyuki Uwazumi, Tadaaki Oikawa
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Patent number: 8686049Abstract: Provided is a substance which is a safer and more commonly-consumed food ingredient that increase the testosterone level. The testosterone enhancer of the invention comprises vitamin K as an active ingredient. The vitamin is preferably menaquinone-4 and/or menaquinone-7. This enhancer is useful as pharmaceutical agents, supplements, health foods or functional foods for the prevention, amelioration and/or treatment of a condition or disease induced by the decreased testosterone level.Type: GrantFiled: May 21, 2007Date of Patent: April 1, 2014Assignees: Tohoku UniversityInventors: Michio Komai, Hitoshi Shirakawa, Yusuke Ohsaki, Tadashi Takumi, Asagi Ito, Toshiro Sato, Rumi Ozaki
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Patent number: 8685264Abstract: A slide member includes a substrate that is made of a metal material and has a sliding surface with a plurality of microdimples formed therein. Each of the microdimple has a circular opening, the microdimples are arranged in regular intervals in a hexagonal close-packed configuration, and the area ratio of the openings of all the microdimples to the entire sliding surface is in the range of 50 to 80%.Type: GrantFiled: September 12, 2011Date of Patent: April 1, 2014Assignees: Toyota Jidosha Kabushiki Kaisha, Tohoku UniversityInventors: Masataka Kaido, Atsushi Suzuki, Masatsugu Shimomura, Hiroshi Yabu, Yuji Hirai
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Patent number: 8679341Abstract: A method of concentrating nanoparticles, having the steps of: adding and mixing an extraction solvent with a nanoparticles-dispersion liquid that nanoparticles are dispersed in a dispersion solvent, thereby concentrating and extracting the nanoparticles into a phase of the extraction solvent, and removing the dispersion solvent by filter-filtrating a liquid of concentrated extract, in which the extraction solvent is substantially incompatible with the dispersion solvent, and the extract solvent can form an interface after the extraction solvent is mixed with the dispersion solvent and left the mixture still; further a method of deaggregating aggregated nanoparticles, having the steps of: applying two or more ultrasonic waves different in frequency to a liquid containing aggregated nanoparticles, and thereby fining and dispersing the aggregated nanoparticles.Type: GrantFiled: May 8, 2006Date of Patent: March 25, 2014Assignees: FUJIFILM Corporation, Tohoku UniversityInventors: Yousuke Miyashita, Hachiro Nakanishi, Hitoshi Kasai, Akito Masuhara