Abstract: It is an object of the present invention to provide a novel therapeutic agent and method for treating amyotrophic diseases, and more specifically a therapeutic agent and method for treating neurogenic amyotrophic disorders such as amyotrophic lateral sclerosis (ALS) and myogenic amyotrophic disorders such as sarcopenia or disuse muscle atrophy. Provided is a therapeutic agent for amyotrophic diseases that comprises one or more compounds selected from the group consisting of compounds represented by the formula (I), the formula (II) and the formula (III), and pharmaceutically acceptable salts of the compounds when R3 represents OH.

Abstract: The present invention provides a transmission guided-mode resonant grating integrated spectroscopy device (transmission GMRG integrated spectroscopy device) characterized by comprising, disposed in this order on an optical detector array in which a plurality of diodes are mounted on a substrate made of a semiconductor: a transparent spacer layer; a waveguide layer; a transparent buffer layer provided as desired; a transmission metallic grating layer having a thickness causing surface plasmon; and a transparent protection film layer which is provided as desired.

Abstract: An optical information detection apparatus includes: a needle-shaped light spot irradiation part that is configured to generate needle-shaped light spot concentrated over a length dimension g greater than a width dimension w along an optical axis, a shifting light spot conversion part that is configured to convert emission light emitted from positions of a detection object into shifting light spot, a shifting light spot reception part that is configured to receive the shifting light spot along a light-receiving plane, and an optical information acquisition part that is configured to acquire optical information from the positions from the shifting light spot.

Abstract: One aspect of the present invention is a force measurement method including a first acquisition step in which, among data included in time course data indicating a movement trajectory of cargo acquired in a non-invasive manner, first data indicating a temporal change of a position of the cargo during a period in which the displacement of the cargo per unit time is substantially constant is acquired, a fluctuation value calculation step in which, based on a first probability distribution indicating a distribution of a probability that the amount of change at a predetermined position of the cargo per unit time is a predetermined amount, which is a probability distribution based on the first data, a fluctuation value proportional to a force applied to the cargo by motor proteins that transport the cargo is calculated, and a force calculation step in which the force is calculated based on the calculated fluctuation value.

Abstract: A memory device capable of reading reference data while achieving optimization of electric power consumption is provided. A memory device includes a memory area storing reference data of N (?1) dimensions each composed of M (?1) bits. A number of memory grains each composed of nonvolatile memory and power drivers paired with the memory grains to supply electrical power to the memory grains are provided in each region specified by column lines in the number and M row lines, the number being one to N inclusive. When the power driver receives a control signal from the corresponding one of the column lines, a control signal from the corresponding one of the M row lines, and a clock signal, the power driver supplies electrical power to the memory grain in synchronization with the clock signal.

Abstract: One of the problems addressed by the present invention is to provide an optical sensor, a solid-state imaging device, and a signal readout method therefor that greatly contribute to a further development of industry and to the realization of a more secure and safe society. One of the solutions provided by the present invention is an optical sensor comprising a light reception element, a storage capacitor for storing charges, and a transfer switch for transferring, to the storage capacitor, a charge generated by light input into the light reception element. The storage capacitor includes a floating diffusion capacitor and a lateral overflow integration capacitor. The transfer switch is an LDD-MOS transistor of which a drain area has a specific impurity concentration.

Abstract: This invention provides a pharmaceutical composition for treating or preventing synucleinopathy comprising a compound represented by formula (I), or a pharmaceutically acceptable salt thereof.

Abstract: A perimeter 2 capable of acquiring, as a threshold SV, a value corresponding to a response result of a subject 22 to an optotype presented with various brightness, for measurement points set across an entire measurement field of view of the ocular fundus, displaying the threshold SV as a threshold inspection result SHR and storing the same in a memory 13, comprises: a portion 15 for obtaining a pattern deviation PDV of the threshold SV relating to each measurement point RG, from the threshold inspection result SHR; a portion for 15 for obtaining a P value representing the obtained pattern deviation PDV for each measurement point RG as a probability variable, and generating a probability map image MAP4 indicating the measurement points RG separately for each P value; a portion 16 for selecting, from an abnormal measurement point group RG of points in the probability map image MAP4 in which at least a prescribed number of measurement points having a P value at most equal to 5% are continuous, and, of those, for

Abstract: A memory device includes a memory cell array in which plural memory cells are arranged in a matrix manner, and a mode selection part. The mode selection part has at least any two of a first mode, a second mode, a third mode and selects any operation mode. The first mode is for reading and writing 1-bit data with the first memory cell or the second memory cell. The second mode is for reading and writing the 1-bit data with a cell unit including the N first memory cells and the N second memory cells connected to a bit line pair. The third mode is for reading and writing the 1-bit data with a cell unit including the M first memory cells and the M second memory cells connected to the bit line pair. M and N are 1 or more integers which are different from each other.

Abstract: A memory circuit (11) includes: a memory cell (MCij) including a variable-resistance element in which a resistance value varies substantially between two levels; a resistance-voltage conversion circuit that converts the resistance value of a memory cell (MCij) to be read into a data voltage; a reference circuit (RCi) including a series circuit of a variable-resistance element and a linear resistor, the variable-resistance element including substantially the same configuration as the configuration of the variable-resistance element included in the memory cell MCij and being set to a lower resistance of two levels; a reference voltage conversion circuit that converts the resistance value of the reference circuit (RCi) into a reference voltage; and a sense amplifier (SA) that determines data stored in the memory cell (MCij) by comparing the data voltage with the reference voltage.

Abstract: A stacked body includes: a substrate made of silicon carbide and having a first main surface forming an angle of 20° or less with a silicon plane; and a graphene film disposed on the first main surface and having an atomic arrangement oriented in relation to an atomic arrangement of silicon carbide forming the substrate. In an exposed surface of the graphene film which is a main surface opposite to the substrate, an area ratio of a region having a full width at half maximum of G? of 40 cm?1 or less under Raman spectroscopy analysis is 50% or more. Accordingly, the stacked body is provided that enables a high mobility to be stably ensured in an electronic device manufactured to include the graphene film forming an electrically conductive portion.

Abstract: An information processing system including multiple memory devices and a processor configured to select one node group associated with a time point included in a time period between a current time point and a time point before a predetermined time including the current time point among multiple node groups each associated with one of multiple time points, and store the N pieces of distributed data one to each of N memory devices included in the selected node group. The information processing system carries out a restoring process on at least one of the multiple node groups, and if the restoring results in failure, carries out the restoring process on a second node group associated with a time point before a time point associated with the first node group that causes the failure among the plurality of node groups.

Abstract: Provided are a solar cell that can be manufactured by non-vacuum process and can have more excellent photoelectric conversion efficiency and a manufacturing method therefor as well as such a semiconductor device and a manufacturing method therefor. A solar cell, includes at least a first semiconductor layer and a second semiconductor layer. The first semiconductor layer includes metal oxide particles of 1 nm or more and 500 nm or less in average particle size and a compound having relative permittivity of 2 or more and 1,000 or less. For instance, the content of the organic compound in the first semiconductor layer is 10 mass % or more and 90 mass % or less.

Abstract: An ingestible sensor according to an embodiment includes a sensor, a detector, and a transmitter and to be mixed with food and discharged without being digested or absorbed also when entering the inside of a body. The sensor is configured to detect a predetermined substance disposed inside the body. The detector is configured to detect whether or not the sensor has entered the inside of the body. The transmitter is configured to transmit information of the predetermined substance detected by the sensor to a communication device disposed outside the body based on a detection of an entrance of the sensor into the inside of the body that is made by the detector.

Abstract: A method for manufacturing a copper alloy according to the present invention comprises (a) weighing a copper powder and one of a Cu—Zr master alloy and a ZrH2 powder such that an alloy composition of Cu-xZr (x is the atomic % of Zr, and 0.5?x?8.6 is satisfied) is obtained and pulverizing and mixing the copper powder and the one of the Cu—Zr master alloy and the ZrH2 powder in an inert atmosphere until an average particle diameter D50 falls within the range of from 1 ?m to 500 ?m to thereby obtain a powder mixture; and (b) subjecting the powder mixture to spark plasma sintering by holding the powder mixture at a prescribed temperature lower than eutectic temperature while the powder mixture is pressurized at a pressure within a prescribed range.

Abstract: The present invention relates to an application liquid for forming a semiconductor film, the application liquid comprising: an inorganic semiconductor particle; and a compound having a relative permittivity of 2 or more or a compound having reducing power against the inorganic semiconductor particle; a method for producing a semiconductor film comprising a step of applying the application liquid; a semiconductor film and a semiconductor element comprising the semiconductor film; and a method for producing the semiconductor element.

Abstract: First ROI pixel values of a first region of interest 101 of a radiographic intensity distribution image 10, and second ROI pixel values of a second region of interest 102 of the radiographic intensity distribution image 10, are acquired. One of the first and second regions of interest is set to be at a position, or vicinity thereof, where a phase difference in the intensity modulation period within the radiographic intensity distribution image, with respect to the other region of interest, becomes ?/2. Next, an elliptical locus obtained by plotting the first and second ROI pixel values for each radiographic intensity distribution image is determined. k angle region images are then acquired using the radiographic intensity distribution images corresponding to at least k angle regions that have been obtained by dividing the elliptical locus for each given angle. A radiographic image is then generated using the k angle region images. k is an integer of three or more.

Abstract: A stacked body includes: a substrate made of silicon carbide and having a first main surface forming an angle of 20° or less with a carbon plane; and a graphene film disposed on the first main surface and having an atomic arrangement oriented in relation to an atomic arrangement of silicon carbide forming the substrate. In an exposed surface of the graphene film as seen in plan view, 10 or less regions are present per 1 mm2, the exposed surface being a main surface opposite to the substrate, and the regions each including 10 or more graphene layers and having a circumcircle with a diameter of 5 ?m or more and 100 ?m or less. Accordingly, the stacked body is provided that enables a high mobility to be stably ensured in an electronic device manufactured to include the graphene film forming an electrically conductive portion.

Abstract: A method of forming a nitride film wherein (a) a silane-based gas is supplied to a processing chamber through a gas supply port; (b) a nitrogen radical gas from a radical generator is supplied to the processing chamber through a radical gas pass-through port; and (c) the silane-based gas supplied in (a) is reacted with the nitrogen radical gas supplied in (b), without causing a plasma phenomenon in the processing chamber, to form a nitride film on a wafer.

Abstract: A first object of the present invention is to provide a method for efficiently growing a nitride single crystal even under low pressure conditions. The present invention relates to a method for producing a nitride single crystal, comprising growing a nitride crystal on the surface of a seed crystal having a hexagonal crystal structure by setting a pressure in a reaction vessel having the seed crystal, a nitrogen-containing solvent, a mineralizer containing a fluorine atom, and a raw material placed therein to 5 to 200 MPa and performing control so that the nitrogen-containing solvent is in at least either a supercritical state or a subcritical state.