Abstract: The present invention provides an erythropoietin expression-enhancing agent that can cancel the suppression of erythropoietin production or promote erythropoietin production, and a therapeutic or preventive drug for anemia, a liver function-improving agent, an ischemic injury-improving agent, a renal protective agent, and an insulin secretagogue comprising the erythropoietin expression-enhancing agent. The erythropoietin expression-enhancing agent of the present invention comprises one or more compounds selected from the group consisting of compounds represented by the following general formulas (I), (II), and (III) and pharmaceutically acceptable salts thereof when R3 is OH.

Abstract: The present invention relates to an application liquid for forming a semiconductor film, the application liquid comprising: an inorganic semiconductor particle; and a compound having a relative permittivity of 2 or more or a compound having reducing power against the inorganic semiconductor particle; a method for producing a semiconductor film comprising a step of applying the application liquid; a semiconductor film and a semiconductor element comprising the semiconductor film; and a method for producing the semiconductor element.

Abstract: A substance contains a phosphatidylinositol-3-kinase (PI3K) inhibitor including a depsipeptide-class compound represented by formula (1), or a physiologically acceptable salt thereof that combines a PI3K inhibitory effect and an HDAC inhibitory effect to provide an anti-cancer pharmaceutical composition for the treatment of an intractable cancer.

Abstract: A magnetoresistance effect element (100) includes a heavy metal layer (11) that includes a heavy metal and that is formed to extend in a first direction, a recording layer (12) that includes a ferromagnetic material and that is provided adjacent to the heavy metal layer (11), a barrier layer (13) that includes an insulating material and that is provided on the recording layer (12) with being adjacent to a surface of the recording layer (12) opposite to the heavy metal layer (11), and a reference layer (14) that includes a ferromagnetic material and that is provided adjacent to a surface of the barrier layer (13), the surface being opposite to the recording layer (12). The direction of the magnetization of the reference layer (14) has a component substantially fixed in the first direction, and the direction of the magnetization of the recording layer (12) has a component variable in the first direction.

Abstract: A data-write device includes a write driver that causes a current to flow through a current path including an MTJ element or the other current path including the MTJ element in accordance with writing data to be written, thereby writing the write data into the MTJ element, a write completion detector which monitors the voltage at a first connection node or a second connection node in accordance with the write data after the writing of the write data into the MTJ element starts, detects the completion of writing of the write data based on the voltage at either node, and supplies a write completion signal indicating the completion of data write, and a write controller that terminates the writing of the write data into the MTJ element in response to the write completion signal supplied from the write completion detector.

Abstract: A robot includes: an arm; and a controller that operates the arm, the controller generating a pathway according to a relative position and a relative orientation of: a first object that moves together with the arm; and a second object and according to a first position of the first object.

Abstract: One end of a current path of a second field-effect transistor is connected to a gate of a first field-effect transistor. One end of a magnetic tunnel junction element is connected to one end of a current path of the first field-effect transistor. A first control terminal is connected to another end of the current path of the first field-effect transistor. A second control terminal is connected to another end of the magnetic tunnel junction element. A third control terminal is connected to another end of the current path of the second field-effect transistor.

Abstract: An FeNi alloy composition comprising an L10-type FeNi ordered phase is provided, which satisfies at least one of the conditions that the sum of the content of Fe and the content of Ni is 90 at. % or less and that the FeNi alloy composition contains Si, and preferably satisfies at least one of the conditions that the ratio of the content of Fe to the content of Ni is 0.3 or more and 5 or less and that the sum of the content of Fe and the content of Ni is 65 at. % or more.

Abstract: A biological information measuring apparatus according to an embodiment includes a calculating unit and a measuring unit. The calculating unit is configured to calculate information related to a pulse wave of a subject, on the basis of luminance information of a picture signal of the subject. The measuring unit is configured to measure a fluctuation of blood pressure of the subject based on an increase or a decrease in the information related to the pulse wave, in accordance with a site of the subject from which the picture signal was obtained.

Abstract: A laminated body includes: a substrate portion composed of silicon carbide; and a graphene film disposed on a first main surface of the substrate portion, the graphene film having an atomic arrangement oriented with respect to an atomic arrangement of the silicon carbide of the substrate portion. A region in which a value of G?/G in Raman spectrometry is not less than 1.2 is not less than 10% in an area ratio in an exposed surface of the graphene film, the exposed surface being a main surface of the graphene film opposite to the substrate portion.

Abstract: Provided are a method and a device that can measure sputtered particles discharged by sputtering with high precision within a short time. A measuring device has a measuring section that measures a ratio between an equivalent value of the number of ion particles discharged from a target by sputtering caused by a pulsed electric discharge and an equivalent value of the number of neutral particles discharged from the target by the pulsed electric discharge. The ratio between the number of the ion particles and the number of the neutral particles discharged from the target by the sputtering can be regarded as one of factors affecting quality of a vapor-deposited film, a film growth rate and an etching rate. Thus, a factor affecting the quality of the vapor-deposited film, the film growth rate and the etching rate can be grasped and also controlled.

Abstract: A copper alloy wire rod includes a copper parent phase and short fiber-shaped composite phases which are dispersed in the copper parent phase and which contain Cu8Zr3 and Cu, wherein the content of Zr is within the range of 0.2 atomic percent or more and 1.0 atomic percent or less. This copper alloy wire rod can be obtained by including the steps of melting a raw material in such a way that a copper alloy having a Zr content within the above-described range of is produced so as to obtain a molten metal in a melting step, casting the molten metal so as to obtain an ingot in a casting step, and subjecting the ingot to cold wire drawing in a wire drawing step, wherein the wire drawing step and a treatment after the wire drawing step are performed at lower than 500° C.

Abstract: A memory cell (101) is connected to a word line (WL), a bit line (BL), and a power supply line (PL), and includes a flip-flop storing data based on a change in resistance value of a magnetic tunnel junction element, and, a power gating field-effect transistor including a drain that is one end of a current path connected to the power supply line, and which has another end connected to the flip-flop. The ON and OFF states of the power gating field-effect transistor are controlled based on a control signal applied to a control terminal of the power gating field-effect transistor.

Abstract: A field effect transistor (FET) with a graphene layer as a channel layer is disclosed. The FET provides two gate electrodes, one of which receives the gate bias, while, the other receives a reference bias. An intermediate electrode made of ohmic metal to the graphene layer is provided between the two gate electrodes. The second gate electrode receiving the reference bias suppresses the hole injection into the channel beneath the first gate electrode.

Abstract: An accurate non-destructive inspection of a moving subject is conducted using a radiation source unit that irradiates radioactive rays toward gratings. Each grating includes a plurality of grating members. A radioactive ray detector unit detects the radioactive rays diffracted by the plurality of grating members. The plurality of grating members are arranged with a predetermined phase difference such that moiré pattern images respectively formed by the radioactive rays transmitted through first to third partial areas have a phase difference between the moiré pattern images.

Abstract: A method for rinsing a compound semiconductor, the method including a step of rinsing a compound semiconductor at a temperature of 80 degrees centigrade or higher with an aqueous solution of sulfuric acid of 50 wt % or less in purified water, the aqueous solution having a hydrogen ion concentration of pH 2 or less and an oxidation-reduction potential of 0.6 volts or higher, the compound semiconductor containing gallium as a constituent element, and the compound semiconductor having a surface of gallium nitride (GaN).

Abstract: An evaluation aid serves as a phantom (imitation lesion) when a digital X-ray image is taken, and evaluation is then carried out through the digital X-ray image. The evaluation aid can simplify evaluating image qualities of a digital X-ray image for X-ray absorption parts having different X-ray absorption ratios all at once. The evaluation aid contains a substrate (plate-like body) including a plurality of regions having different X-ray absorption ratios for taking a digital X-ray image to carry out evaluation. Step members are provided on the plate-like body so as to correspond to the plurality of regions, respectively, where each step member includes a plurality of subregions having different X-ray absorption ratios. Preferably the thicknesses and/or constituent materials of the plurality of regions of the substrate are different from each other in order to have different X-ray absorption ratios in these regions.

Abstract: The present invention provides a selection method of tag SNPs, for constituting a group of nucleic acid probes corresponding to the tag SNPs, the tag SNPs being used for performing imputation of information on SNPs of human genome by using human genome information, the human genome information including information on a group of SNPs, the genotypes of the SNPs being identified in multiple individuals, in which method a sum of mutual informations between tag SNP candidates and target SNPs is used as an index for selecting the tag SNPs, and a computer system based on the principle, a computer program, and a DNA microarray on which nucleic probes corresponding to the tag SNPs selected by the means, and a production method thereof.

Abstract: Provided is a robot including a hand and a control unit that operates the hand. The control unit rotates a first object around a predetermined position of the first object with the hand and moves the first object with respect to a second object, based on a captured image including the hand and the first object.

Abstract: A memory circuit (100) includes a plurality of memory cells (50), an N-type MOSFET (30a) and an N-type MOSFET (30b). The drain of the N-type MOSFET (30a) is connected to one of a pair of bit lines, and the drain of the N-type MOSFET (30b) is connected to the other of the pair of bit lines. The gate of the N-type MOSFET (30a) is connected to the drain of the N-type MOSFET (30b), and the gate of the N-type MOSFET (30b) is connected to the drain of the N-type MOSFET (30a).