Abstract: A constant multiplication device is designed for multiplying a received binary multiplicand by a constant multiplier which, when expressed in binary or signed-digit notation, includes a repeated pattern with three or more non-zero values. The device includes a pattern-product term generator that receives the multiplicand and generates terms corresponding to each of the non-zero values of the pattern. If, when all instances of the pattern are subtracted from the multiplier there are non-zero values in the difference, the pattern-product term generator can also generate remainder-product terms. The pattern-product terms, but not the remainder-product terms, are input to a pattern compressor that yields pattern-product partials; the compressor can be a carry-save adder and the partials can be in the form of a pseudo sum and a pseudo carry. A replica generator generates shifted replicas of each pattern-product partial. The replicas are input to a replica compressor, as are any remainder-product terms.

Abstract: A semiconductor device isolating structure and method for forming such a structure. In one embodiment, an opening is formed through a mask layer overlying a semiconductor substrate. A trench of a desired depth is then etched into the semiconductor substrate at the area of the semiconductor substrate underlying the opening in the mask layer. The trench is then filled with a dielectric material. After an oxide planarizing process, the present invention exposes the dielectric-filled trench to an oxidizing environment. By filling the trench with dielectric material prior to the oxidization step, the present invention selectively oxidizes the semiconductor substrate at corners formed by the intersection of the sidewalls of the trench and the top surface of the semiconductor substrate. In so doing, the present invention forms smoothly rounded semiconductor substrate corners under the mask layer.

Abstract: A method for storing and transferring wave table audio samples from system memory to a cache unit. The method creates a linked-list of pages in system memory for storing the audio sample. The linked-list is actually a pointer list indicating the locations in system memory where the audio samples are stored. A Digital Signal Processor (DSP) is able to translate the starting address of the pointer list to retrieve a requested audio sample from the system memory. The requested audio sample is then transferred to the cache unit where the DSP is able to retrieve audio samples in a linear fashion at a rate much faster than individually fetching the required portions of the audio sample from the main memory of the system.

Abstract: The present invention is a desktop personal computer (PC) system having peripheral device bus mastering. The system has four main elements: a Direct Memory Access (DMA) controller, a hardware state machine, a bus controller, and a device controller. The device controller may be an IDE hard disk controller which is able to generate long streams of data in an intermittent fashion wherein any single stream of data is targeted to a number of different host memory locations. The device controller may also be an ECP parallel port controller which interfaces with a number of different peripheral devices over a parallel bus wherein each peripheral device appears to the system as a separate and independent data path.

Abstract: A system for clamping a clock signal line that prevents clock glitching is disclosed. The system is comprised of a plurality of logic gates which generates a signal to clamp the clock signal line only on the occurrence of the clock signal line being low, a clock clamping signal 26 is generated indicating that a peripheral device wants to clamp the clock signal line, and a start condition is detected indicating that the clock signal line may be clamped.

Abstract: A method of automatic synthesis of an integrated circuit, comprising the steps, performed by a programmed machine, of storing a Boolean expression which expresses a combinatorial part of the said integrated circuit, factorizing the Boolean expression and mapping the factorized Boolean expression into a representation of said integrated circuit in hardware terms. The step of factorizing comprises computing a zero-suppressed binary decision diagram unique to and representing the Boolean expression; computing, from said ZBDD, candidate divisors of said expression; selecting candidate divisors; and dividing the Boolean expression by the candidate divisor. The selection of candidate divisors includes computing attributed value on the basis of the saving of literals. The method includes the use of implicit division comprising computing upper and lower bounds for a remainder and then a quotient.

Abstract: A method for producing a glue layer for an integrated circuit which uses tungsten plugs in accordance with the present invention includes: (A) providing a substrate which has a surface, a center, an edge, and a direction normal to the surface; and (B) sputter depositing a glue layer over the surface of the substrate such that an edge thickness of the glue layer measured in the direction normal to the surface at the edge of the substrate is at least 105% of a center thickness of the glue layer measured in the direction normal to the surface at the center of the substrate.

Abstract: A communications system includes a vector modulator controller receiving a data stream and developing a vector modulator control signal by GMSK waveform synthesis and a transmitter having a vector portion controlled by the vector modulator control signal. The vector modulator controller includes: (1) ROM memory storing a plurality of waveform maps including an alternating map, a constant map, a monotonic sine map, and a monotonic cosine map; (2) a counter coupled to the ROM memory and capable of developing a sequence of ROM addresses; (3) a temporal bit generator responsive to a data stream, the temporal bit generator developing a next bit Nb, a current bit Cb, and a past bit Pb from the data stream; (4) control circuitry to develop a digital waveform signal from selected waveform maps in the ROM memory; and (5) a pair of DACs responsive to the digital waveform signal and operative to output a vector modulator control signal that encodes the data stream.

Abstract: An apparatus and method for providing a built-in self-test functional system block (BIST FSB) for self-testing a network interface integrated circuit having a Universal Test & Operations PHYInterface for ATM (UTOPIA) interface. The BIST FSB includes a random number generator, a signature analyzer, two cell counters, and a state machine for controlling the BIST FSB. Means are provided for looping the transmitter of the network interface integrated circuit back to the receiver of the network interface integrated circuit. When the BIST test is started, the state machine waits until the receiver is synchronized. Then user cells are generated and fed to the transmitter for the network interface integrated circuit. At the same time, cells on the receive side are collected and compressed into a signature. When all of the cells have been received, the signature is compared with a precalculated signature. If the signatures match, the test is passed.

Abstract: A quad flat pack arrangement which provides for an electrically enhanced integrated-circuit package structure is disclosed. An integrated-circuit die is centrally attached to the top surface of a thermally-conductive, and electrically conductive or insulated substrate. A lead frame having a plurality of inwardly-extending bonding fingers has the bottom sides thereof attached to the top surface of the substrate by a non-conductive adhesive so that an open portion thereof overlies the integrated-circuit die. The plurality of bonding fingers are disposed so as to peripherally surround the integrated-circuit die. A double-sided printed circuit board having first and second conductive layers disposed on its opposite sides is disposed over and bonded to the lead frame. Bonding wires are used to interconnect bonding pads on the integrated-circuit die to the first and second conductive layers. A plastic material is molded around the substrate, die, lead frame, printed circuit board and conductive layers.

Abstract: The present invention relates to a system and method for starting and maintaining a Central Processing Unit (CPU) clock even though the CPU clock is operating under a Clock Division Emulation (CDE) scheme. Break Events are broken into different groups with each group of Break Events being mapped to a particular programmable event timer. Each of the programmable event timers have an associated time limit which will keep the CPU clock running for a time commensurate with that group of Break Events. When a Break Event occurs, the programmable event timer associated with that particular Break Event will load the corresponding time limit into the programmable event timer. Once loaded, the programmable event timer will keep the CPU clock running during the entire time limit. Only after all of the programmable event timers have counted down will the CPU clock be allowed to stop.

Abstract: A method of making an integrated circuit interconnect structure having air as the effective dielectric between metallization layers includes the steps of: a) providing an air dielectric formation layer of a sacrificial material over a substrate; b) forming a pillar holes in the air dielectric formation layer; c) filling the pillar holes with a non-sacrificial material; d) constructing a metallization layer over the sacrificial air dielectric formation layer and nonsacrificial material pillars; and e) applying an isotropic etchant to the interconnect structure to remove the sacrificial material, leaving the non-sacrificial material pillars for mechanical support of the metallization layer. An interconnect structure having an air dielectric includes a bottom metallization layer, a top metallization layer, and a plurality of pillars separating the bottom and top metallization layers and mechanically supporting the top metallization layer.

Abstract: A high density ball-grid array package for packaging an integrated-circuit die includes a laminated structure formed of a dielectric layer and a high conductive layer disposed thereon. The dielectric layer has a plurality of first drilled holes, and the conductive layer is formed with a desired pattern. An insulated layer is provided with a plurality of second drilled holes. The laminated substrate is bonded to the insulated substrate so that the plurality of first drilled holes are aligned with corresponding ones of the plurality of second drilled holes in order to form selective solderable areas on the bottom side of the package. The laminated structure has an open portion overlying a central region of the insulated substrate on the top side of the package. An integrated-circuit die is mounted in the central region of the insulated substrate. Bonding wires are interconnected between bonding pads formed on the integrated-circuit die and bonding fingers formed on the conductive layer of laminated structure.

Abstract: A patch mechanism for dynamic modification of the behavior of a state machine without interfering with normal operation of the state machine when modification is not required. The patch mechanism uses a programmable logic array for storing a modified transition and a modified output transition for an individual state of the state machine which is to be modified. A pair of multiplexer having inputs coupled to the state machine and inputs coupled to the programmable logic array are used for allowing the state machine to select either the current transition and the current output transition both defined by the state machine, or a modified transition and a modified output transition if a modification of the present state is required. A logic circuit coupled to the state machine and to both multiplexers will signal both multiplexers when it is valid to modify the present state to the modified transition and the modified output transition.

Abstract: A method for forming a scribe line on a semiconductor wafer including the steps of: (a) providing a semiconductor substrate; and (b) sequentially providing a plurality of layers over the semiconductor substrate of alternating conductive and insulating types, where each of the layers is provided with an elongated opening is formed relative to a desired scribe line position, and where the openings of at least some of the plurality of layers are wider than openings of preceding layers such that at least one sidewall of a completed scribe line has a pronounced slope extending outwardly from its base. The structure of the present invention is, therefore, a scribe line having sloped sidewalls that greatly reduces scribe line contamination problems and enhances planarization during subsequent spin-on-material processes. The scribe lines can either be elongated openings in the layers, or an elongated mesa formed in the layers.

Abstract: A metal, such as Platinum, is stripped from a wafer during processing of an integrated circuit. The wafer, typically within a cassette of wafers, is submerged in de-ionized water. The de-ionized water is, for example, held within a container made of quartz. Optimally, the de-ionized water is heated, for example, to a temperature of 80 degrees Centigrade. Chlorine gas and hydrochloric acid gas are bubbled into the de-ionized water to oxidize the metal.

Abstract: A heat sink is formed on a bonded semiconductor on insulator (SOI) wafer. A trench is formed which extends from a top of the bonded SOI wafer through an isolation region of the bonded SOI wafer to a base of the bonded SOI wafer. The base of the bonded SOI wafer is located below the isolation region of the bonded SOI wafer. A conductive pillar is formed in the trench. The conductive pillar extends from the top of the bonded SOI wafer through the isolation region of the bonded SOI wafer and is physically in contact with but electrically insulated from the base of the bonded SOI wafer. In the preferred embodiment, the conductive pillar is formed of doped polysilicon. The doped polysilicon is of a conductivity type which is different than the conductivity type of the base. Out-diffusion from the doped polysilicon forms a region within the base which electrically insulates the conductive pillar from the base.

Abstract: A computer system having a multiplex address/data bus with a multiplex system controller and method therefor is disclosed which provides in a computer system having time shared use of a multiplex address/data bus to reduce the number of required pins for devices within the computer system, a CPU having at least one address bus, at least one data bus, at least one memory input/output, and at least one CPU control bus coupled thereto for sending and receiving information.

Abstract: A computer-aided method and system are provided for obtaining a measurement of the capacitance value of a device under test (DUT). The complex impedance of a device under test (DUT) is measured at two nearby frequencies using an RLC meter. The two complex impedance values are then stored in a computer readable medium. The DUT is modeled by a programmed computer as a four element RLC model circuit including a resistor and inductor in series with a parallel RC circuit having a single capacitor which represents the capacitance of the DUT. Four equations which describe the electrical characteristics of the four element RLC model circuit are stored in a computer readable medium. The four measured values of complex impedance are substituted by the computer into the four stored equations. Values are obtained for the four individual RLC circuit elements by solving the four equations. The four unknown values are obtained by use of an optimization routine and then stored to a computer readable medium.

Abstract: An integrated circuit includes a substrate with doped regions, a patterned polysilicon layer defining contacts and local interconnects, a submetal dielectric, a two-metal layer metal interconnect structure with an intermetal dielectric layer, and a passivation layer. Like the dielectric layers, the passivation layer is optically transparent, thick, and planarized. Because of this, laser energy can be directed through the passivation layer to fuse two conductors of the top metal layer without delaminating the passivation layer. In addition, laser energy is directed through the passivation layer and the intermetal dielectric to fuse pairs of conductors in the lower metal layer. Thus, the present invention provides for reliable convenient circuit modification without disturbing dielectric and exposing metal features to moisture and other contaminants.