Abstract: A light-emitting device comprising a package comprising a light-emitting element comprising a first surface and a second surface opposite to the first surface, a first light-transmissive member arranged on the second surface of the light-emitting element, paired electrodes at the first surface of the light-emitting element, and a first covering member covering the light-emitting element such that the paired electrodes are exposed from the first covering member. The light-emitting device further comprises a light-guiding plate on which the package is placed, and a second covering member arranged on the light-guiding plate and covering laterally the package. The light-emitting device further comprises paired wirings continuously covering the paired electrodes exposed and the first covering members and being connected to the paired electrodes respectively.

Abstract: A glass device including a thin glass substrate which has a glass thickness of 300 ?m or less is enabled to be provided more easily. In a method for manufacturing the glass device, one or more through holes are formed in a glass substrate, and a first wiring on a first surface side of the glass substrate and a second wiring on a second surface side of the glass substrate are electrically connected to each other via the through holes. After the first wiring is provided, the through holes are formed while the glass substrate is being thinned by etching. Then, wirings in the through holes and the second wiring are formed. The thinned glass substrate has a thickness of 50 ?m or more and 300 ?m or less. The through holes have the shape of a truncated cone.

Abstract: A light-emitting device includes a substrate; at least one light-emitting element on or above the substrate; a plate-shaped light-transmissive member having a lower surface that faces an upper surface of the at least one light-emitting element; a covering member that covers a lateral surface of the at least one light-emitting element and a lateral surface of the light-transmissive member; and a light-guiding member that is disposed between the light-emitting element and the light-transmissive member. In a plan view, a first lateral side of an upper surface of the light-transmissive member is outside a first lateral side of the upper surface of the at least one light-emitting element, and a second lateral side of the upper surface of the light-transmissive member is inside a second lateral side of the upper surface of the at least one light-emitting element.

Abstract: The present disclosure relates to a radio frequency device that includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion, first bump structures, a first mold compound, and a second mold compound. The FEOL portion includes an active layer, a contact layer, and isolation sections. Herein, the active layer and the isolation sections reside over the contact layer, and the active layer is surrounded by the isolation sections. The BEOL portion is formed underneath the FEOL portion, and the first bump structures and the first mold compound are formed underneath the BEOL portion. Each first bump structure is partially encapsulated by the first mold compound, and electrically coupled to the FEOL portion via connecting layers within the BEOL portion. The second mold compound resides over the active layer without a silicon material, which has a resistivity between 5 Ohm-cm and 30000 Ohm-cm, in between.

Abstract: A semiconductor light-emitting device includes a substrate, a semiconductor light-emitting element, and a resin member. The substrate includes a base member and a conductive part. The semiconductor light-emitting element is supported on the substrate. The resin member covers at least a portion of the substrate. The base member has a front surface and a back surface that face opposite to each other in a thickness direction. The conductive part includes a front portion formed on the front surface. The semiconductor light-emitting element is mounted on the front portion. The resin member includes a frame-shaped portion surrounding the semiconductor light-emitting element as viewed in the thickness direction, and a front-surface covering portion connected to the frame-shaped portion and covering a portion of the front surface of the base member that is exposed from the front portion.

Abstract: A micro LED display device includes a substrate, micro LED units and a transparent insulation layer. The substrate includes conductive pads and conductive connecting portions. The conductive pads are disposed on the substrate. Each of the micro LED units includes a semiconductor epitaxial structure and electrodes. The electrodes are disposed on the semiconductor epitaxial structure, and each of the electrodes is connected to one of the conductive connecting portions adjacent to each other. The transparent insulation layer is disposed on the substrate and covers the conductive pads, the conductive connecting portions and the micro LED units, and the transparent insulation layer is filled between the electrodes of each of the micro LED units. The transparent insulation layer relative to a surface on each of the semiconductor epitaxial structures is of a first thickness and a second thickness, and the first thickness is different from the second thickness.

Abstract: The present disclosure relates to a radio frequency device that includes a device region with a back-end-of-line (BEOL) portion and a front-end-of-line (FEOL) portion, first bump structures, a first mold compound, and a second mold compound. The FEOL portion includes an active layer, a contact layer, and isolation sections. Herein, the active layer and the isolation sections reside over the contact layer, and the active layer is surrounded by the isolation sections. The BEOL portion is formed underneath the FEOL portion, and the first bump structures and the first mold compound are formed underneath the BEOL portion. Each first bump structure is partially encapsulated by the first mold compound, and electrically coupled to the FEOL portion via connecting layers within the BEOL portion. The second mold compound resides over the active layer without a silicon material, which has a resistivity between 5 Ohm-cm and 30000 Ohm-cm, in between.

Abstract: A light emitting device includes: a substrate; a light emitting element; a wavelength conversion layer; and a wall surrounding the wavelength conversion layer, having an opening portion exposing at least a part of a top surface of the wavelength conversion layer, and containing a light reflective material. The surface of the wall includes a top surface provided at a higher position than the top surface of the wavelength conversion layer, and an inner surface forming the opening portion. The wall includes a first portion surrounding the wavelength conversion layer, and a second portion provided over the first portion and surrounding the first portion. The opening portion is hollow. An angle of a corner portion between the top surface and the inner surface of the wall is in a range of 90 degrees or greater and less than 180 degrees.

Abstract: A display apparatus includes a display substrate, first micro LED modules arranged on the display substrate, and at least one second micro LED module disposed between the first micro LED modules. Each of the first micro LED modules includes a first substrate, and micro LEDs disposed on the first substrate, the second micro LED module includes a second substrate, and micro LEDs disposed on the second substrate. The first substrate includes a lower body and a top plate located on the lower body. The lower body is recessed from an edge of the top plate, and the second micro LED module is disposed between recessed lower bodies of adjacent first micro LED modules.

Abstract: A light emitting device has a substrate having a rectangular planar shape, one or a plurality of light emitting elements mounted on the substrate, a dam resin having a frame-like planar shape, arranged so as to surround the light emitting element, and having an inclined surface whose height increases as its distance from the light emitting element increases, and a seal resin arranged in an area surrounded by the dam resin and which seals the light emitting element, and the dam resin has a protruding portion extending and protruding from at least one side toward the opposite side.

Abstract: A semiconductor package includes a first semiconductor die, a second semiconductor die, a semiconductor bridge, an integrated passive device, a first redistribution layer, and connective terminals. The second semiconductor die is disposed beside the first semiconductor die. The semiconductor bridge electrically connects the first semiconductor die with the second semiconductor die. The integrated passive device is electrically connected to the first semiconductor die. The first redistribution layer is disposed over the semiconductor bridge. The connective terminals are disposed on the first redistribution layer, on an opposite side with respect to the semiconductor bridge. The first redistribution layer is interposed between the integrated passive device and the connective terminals.

Abstract: A package assembly and a manufacturing method thereof are provided. The package assembly includes a first package component and an optical signal port disposed aside the first package component. The first package component includes a first die including an electronic integrated circuit, a first insulating encapsulation laterally covering the first die, a redistribution structure disposed on the first die and the first insulating encapsulation, and a second die including a photonic integrated circuit and electrically coupled to the first die through the redistribution structure. The optical signal port is optically coupled to an edge facet of the second die of the first package component.

Abstract: The present disclosure provides a semiconductor structure, including a transistor. The transistor includes a semiconductive substrate, a gate structure, a pair of highly doped regions and a dielectric element. The semiconductive substrate has a top surface. The gate structure is over the top surface. The pair of highly doped regions is separated by the gate structure. The dielectric element is embedded in the semiconductive substrate. The dielectric element is laterally and vertically misaligned with the pair of highly doped regions.

Abstract: A semiconductor device package comprises a semiconductor device, a first encapsulant surrounding the semiconductor device, a second encapsulant covering the semiconductor device and the first encapsulant, and a redistribution layer extending through the second encapsulant and electrically connected to the semiconductor device.

Abstract: Disclosed are an LED lamp bead and an LED lamp group. The LED lamp bead includes a light-emitting body and a light-bead bracket; and the lamp-bead bracket includes a light-emitting body fixing structure and a drive circuit; the light-emitting body fixing structure is configured for fixing the light-emitting body, and the drive circuit is connected with the light-emitting body, for driving the light-emitting body to emit light in response to a lamp bead trigger signal; and the drive circuit includes an input pin and power supply pins, the power supply pins are connected to a power supply, and the input pin is configured to receive the lamp bead trigger signal and transmit it to the drive circuit, so that the drive circuit drives the light-emitting body to emit light. The LED lamp bead provided by the present application drives the light-emitting body to emit light through the drive circuit.

Abstract: A semiconductor package structure includes a first semiconductor die having an active surface and a passive surface opposite to the active surface, a conductive element leveled with the first semiconductor die, a first redistribution layer (RDL) being closer to the passive surface than to the active surface, a second RDL being closer to the active surface than to the passive surface, and a second semiconductor die over the second RDL and electrically coupled to the first semiconductor die through the second RDL. A first conductive path is established among the first RDL, the conductive element, the second RDL, and the active surface of the first semiconductor die.

Abstract: An integrated optically functional multilayer structure includes a flexible, substrate film arranged with a circuit design including at least a number of electrical conductors preferably additively printed on the substrate film; a light source provided upon a first side of the substrate film to internally illuminate at least portion of the structure for external perception; an optically transmissive plastic layer produced upon the first side of the substrate film, said plastic layer at least laterally surrounding, the light source, the substrate film at least having a similar or lower refractive index therewith; and a reflector design comprising at least one material layer, said reflector design being configured to reflect, the light emitted by the light source and incident upon the reflector design.

Abstract: Provided are a thermal bonding sheet capable of suppressing inhibition of sintering of sinterable metallic particles by an organic component, thereby imparting sufficient bonding reliability to a power semiconductor device, and a thermal bonding sheet with a dicing tape having the thermal bonding sheet. A thermal bonding sheet has a precursor layer that is to become a sintered layer by heating, and the precursor layer includes sinterable metallic particles and an organic component, the precursor layer has a phase separation structure that is a sea-island structure or a co-continuous structure, and in a SEM surface observation image on at least one surface of the precursor layer, a maximum value among each diameter of the largest inscribed circle for a region occupied by each phase of the phase separation structure is 1 ?m or more and 50 ?m or less.

Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. The method includes forming a memory cell stack over a substrate. The memory cell stack includes a top electrode. A sidewall spacer structure is formed around the memory cell stack. The sidewall spacer structure includes a first sidewall spacer layer, a second sidewall spacer layer, and a protective sidewall spacer layer sandwiched between the first and second sidewall spacer layers. A dielectric structure is formed over the sidewall spacer structure. A first etch process is performed on the dielectric structure and the second sidewall spacer layer to define an opening above the top electrode. The second sidewall spacer layer and the dielectric structure are etched at a higher rate than the protective sidewall spacer layer during the first etch process. A top electrode via is formed within the opening.

Abstract: A lighting device includes a circuit substrate that includes a wiring circuit, LEDs that are mounted on the circuit substrate and that emit primary light, a phosphor sheet that faces a light emission surface of each of the LEDs and that has a function of converting part of the primary light into secondary light in another wavelength range that differs from the wavelength range, and a selective reflection layer that is composed of dielectric multilayer film, that is disposed between the phosphor sheet and the LEDs, that covers the light emission surface of each of the LEDs, that allows the part of the primary light to be transmitted therethrough, and that reflects part of the secondary light. The selective reflection layer is disposed so as to have convex shapes projecting in a direction opposite a direction toward the circuit substrate in regions that overlap the LEDs.