Abstract: A light-emitting device includes: a package defining a recess; a light-emitting element mounted on surface that defines a bottom of the recess; and a sealing member disposed in the recess so as to cover the light-emitting element and made of a light-transmissive resin that contains a filler with an average particle diameter of 200 nm or more and 500 nm or less. The sealing member comprises a filler-containing layer, which contains the filler, and a light-transmissive layer that are layered in an order from a bottom side of the recess. The filler-containing layer has a thickness of equal to or larger than a height of the light-emitting element.

Abstract: An optoelectronic device (LV) with a reflective composite material (V) having a carrier (1) consisting of aluminium, having an interlayer (2) composed of aluminium oxide present on one side (A) of the carrier (1) and having a reflection-boosting optically active multilayer system (3) that has been applied via the interlayer (2). The interlayer (2) consisting of aluminium oxide has a thickness (D2) in the range from 5 nm to 200 nm and that, on the opposite side (B) of the carrier (1) from the reflection-boosting optically active multilayer system (3), a superficial layer (9) of a metal or metal alloy having, at 25° C., a specific electrical resistivity of not more than 1.2*10?1 ?mm2/m has been applied. The thickness (D9) of the superficially applied layer (9) is in the range from 10 nm to 5.0 ?m.

Abstract: Lighting systems are described. A lighting system includes a first lead frame portion and a second lead frame portion. The first lead frame portion has at least a top surface, a bottom surface, and an opening. The second lead frame portion is within the opening of the first lead frame portion and has at least a top surface and a bottom surface. Light-emitting diode (LED) devices are each mechanically and electrically coupled to the top surface of the first lead frame portion and the top surface of the second lead frame portion. An electrically insulating and optically reflective material is disposed over exposed regions of the top surfaces of the first and second lead frame portions.

Abstract: A semiconductor structure includes a gate structure disposed over a substrate, and a plurality of source/drain features disposed on the substrate and interposed by the gate structure. Each of the source/drain features includes a first doped source/drain region extended away from the substrate, and a second doped source/drain region disposed on top and side surfaces of the first doped source/drain region, in which a phosphorus doping concentration of the first doped source/drain region is lower than a doping concentration of the second doped source/drain region.

Abstract: The light emitting device package disclosed in the embodiment of the invention includes first and second frames; a body disposed between the first and second frames; and a light emitting devices disposed on the first and second frames. The first frame includes a first end portion adjacent to the second frame, and the second frame includes a second end portion adjacent to the first frame and facing the first end portion, the first end portion includes a first protrusion protruding toward the second frame, and the second end portion includes a second protrusion protruding toward the first frame. The light emitting device includes first and second bonding portions disposed on the first and second protrusions. The body includes first and second reflective portions extending toward both sides of the first protrusion toward the first frame, and third and fourth reflective portions extending toward both sides of the second protrusion toward the second frame.

Abstract: A method for producing a thin-film layer includes providing a layer stack on a carrier substrate, wherein the layer stack includes a carrier layer and a sacrificial layer, and wherein the sacrificial layer includes areas in which the carrier layer is exposed. The method includes providing the thin-film layer on the layer stack, such that the thin-film layer bears on the sacrificial layer and, in the areas of the sacrificial layer in which the carrier layer is exposed, against the carrier layer. The method includes at least partly removing the sacrificial layer from the thin-film layer in order to eliminate a contact between the thin-film layer and the sacrificial layer in some areas. The method also includes detaching the thin-film layer from the carrier layer.

Abstract: A light-emitting device package according to one embodiment comprises: a body including a through-hole formed in an upper surface and a lower surface; a light-emitting device arranged on the upper surface of the body and including first and second bonding units spaced apart from each other; and first and second metal units arranged so as to be spaced apart from each other on the rear surface of the body, wherein a partial area of each of the first and second bonding units overlaps with the through-hole in a vertical direction, the first and second metal units respectively includes first and second extension portions extending to the through-hole; the first and second extension portions is electrically connected to the first and second bonding units, respectively; and the first and second extension portions face each other within the through-hole.

Abstract: An optoelectronic semiconductor component may include a housing having a recess, and a chip carrier which is a part of the housing. The chip carrier may have a first fastening side and an upper side. The optoelectronic semiconductor chip may be mounted on the upper side in the recess. First electrical contact pads for external electrical contacting may be located on the first fastening side. Furthermore, second electrical contact pads for external electrical contacting may be located on a second fastening side, opposite to the first fastening side, of the housing. First and second electrical contact pads electrically assigned to one another may be electrically short-circuited so that the semiconductor component can be electrically contacted by the first or by the second fastening side.

Abstract: A semiconductor light-emitting device includes a substrate, a semiconductor light-emitting element, and a resin member. The substrate includes a base member and a conductive part. The semiconductor light-emitting element is supported on the substrate. The resin member covers at least a portion of the substrate. The base member has a front surface and a back surface that face opposite to each other in a thickness direction. The conductive part includes a front portion formed on the front surface. The semiconductor light-emitting element is mounted on the front portion. The resin member includes a frame-shaped portion surrounding the semiconductor light-emitting element as viewed in the thickness direction, and a front-surface covering portion connected to the frame-shaped portion and covering a portion of the front surface of the base member that is exposed from the front portion.

Abstract: A method for manufacturing a light-emitting device includes preparing an intermediate product; the product includes a light-emitting element provided with paired electrodes at a first surface and a first covering member covering the light-emitting element such that portions of surfaces of the paired electrodes are exposed. A metal paste layer is formed, continuously covering the exposed portion of the paired electrodes and the first covering member. Paired wirings are formed for preventing the paired electrodes from being short-circuited. The metal paste layer on the paired electrodes and the metal paste layer on the first covering member are irradiated with laser light to remove the metal paste layer between the paired electrodes and a portion of the metal paste layer on the first covering member.

Abstract: Provided are a Light Emitting Diode (LED) device and a backlight module. The LED device includes a substrate, a chip, an encapsulation structure and a top reflective shielding layer; the chip is disposed on the substrate; the encapsulation structure covers the substrate and covers the chip; and the top reflective shielding layer is disposed on the encapsulation structure and located at a central position of an upper surface of the encapsulation structure, and covers a part of the upper surface of the encapsulation structure.

Abstract: A micro light emitting diode including an epitaxial structure and two electrodes is provided. The epitaxial structure includes a first surface, a second surface and a side surface. The first surface is opposite to the second surface, and the side surface is connected to the first surface and the second surface. The side surface includes a first portion and a second portion. The first portion is connected to the second portion to form a turning position. A width of the epitaxial structure gradually increases from the first surface to the turning position and gradually decreases from the turning position to the second surface. The two electrodes are disposed on the epitaxial structure and are electrically connected to the epitaxial structure. A micro light emitting diode device substrate adopting the micro light emitting diode is also provided.

Abstract: A light-emitting diode display having sub-pixel regions is provided. Each of the sub-pixel region includes a substrate, first and second electrodes, a light-emitting diode, and at least one blocking wall. The substrate has an active device. The first and second electrodes are separately disposed on the substrate. The first electrode is electrically connected to the active device, and a horizontal distance between the first and second electrodes is W1. The light-emitting diode is disposed on the substrate and includes a semiconductor stack, and first and second pads. The first pad contacts the first electrode, the second pad contacts the second electrode, and a maximum thickness of the semiconductor stack is H1. The blocking wall is disposed on the substrate and located between the first and second pads to prevent a contact therebetween. A height of the blocking wall is H2 and a width thereof is W2. H2?½H1, and W2?W1.

Abstract: A light emitting device includes a first light emitting element, a second light emitting element, a first light-transmissive member, and a first wavelength converting member. The first light emitting element has a first light emitting element first surface at which a first n-side electrode and a first p-side electrode are disposed, and a first light emitting element second surface. The second light emitting element has a second light emitting element first surface at which a second n-side electrode and a second p-side electrode are disposed, and a second light emitting element second surface. The first light-transmissive member covers the first light emitting element fourth surface of the first light emitting element and a second light emitting element fourth surface of the second light emitting element. The first wavelength converting member is disposed on the first light-transmissive member.

Abstract: The light emitting device package disclosed in the embodiment includes a package body including first and second frames, and a first body disposed between the first and second frames; a second body disposed on the package body and including a cavity and a sub-cavity spaced apart from the cavity; a light emitting device disposed in the cavity and including first and second bonding portions; and a protection device disposed in the sub-cavity, wherein the package body and the second body may be coupled to an adhesive member.

Abstract: A light emitting device package disclosed in an embodiment of the invention includes a substrate including first and second frames; a light emitting device including a first bonding portion facing the first frame and a second bonding portion facing the second frame; a phosphor layer on the light emitting device; a first resin disposed around the upper surface of the substrate and the light emitting device; a second resin between the first resin and side surfaces of the light emitting device; and an adhesive layer between the phosphor layer and the light emitting device, wherein the adhesive layer includes a thickness thinner than a thickness of the phosphor layer, and the first resin comprises a reflective resin material and is disposed on the side surface of the phosphor layer. The second resin may include a transparent resin material, and the second resin may include a curved surface with an outer surface facing the first resin.

Abstract: An LED module includes a first metal layer disposed on a base surface and an LED chip disposed on the first metal layer. The first metal layer includes a first end portion forming a contour away from the base surface, and a curved portion between a region overlapping the LED chip and the first end portion.

Abstract: A light-emitting device includes a base member including a first lead, a second lead, and a securing member securing the first lead and the second lead, a light-emitting element mounted on an upper surface of the base member, a frame disposed on the upper surface of the base member to surround the light-emitting element, a first member covering at least a portion of an upper surface of the securing member exposed at an outer peripheral side of the frame in a top view, the first member being in contact with an outer lateral surface of the frame and containing a reflective material, and a second member covering the light-emitting element, the frame, and the first member. The first member has an inclined region in a cross-sectional view. A maximum height of the inclined region is less than a height of an upper end of the frame.

Abstract: A semiconductor device package includes a light emitting device disposed on a body, and at least one resin disposed between the body and the light emitting device. The body may include first and second opening parts passing through the body from the upper surface of the body, and at least one recess concavely provided from the upper surface of the body towards the lower surface of the body. The light emitting device may include a first bonding part disposed on the first opening part, and a second bonding part disposed on the second opening part. The at least one recess may be disposed between the first and second opening parts, and along the circumferences of the first and second opening parts. The at least one resin may be provided to the at least one recess. The at least one resin may include a reflective material.

Abstract: A method is provided for area-selective deposition on a semiconductor workpiece using an integrated sequence of processing steps executed on a common manufacturing platform hosting one or more film-forming modules, one or more etching modules, and one or more transfer modules. A workpiece having a target surface of a first material and a non-target surface of a second material different than the first material is received into the common manufacturing platform. An additive material is deposited on the workpiece with selectivity that results in the additive material forming on the target surface at a higher deposition rate than on the non-target surface, followed by etching to expose the non-target surface. The integrated sequence of processing steps is executed within the common manufacturing platform without leaving the controlled environment and the transfer modules are used to transfer the workpiece between the processing modules while maintaining the workpiece within the controlled environment.