Abstract: A method includes following steps. A semiconductor fin is formed extending from a substrate. A gate structure is formed extending across the semiconductor fin. Recesses are etched in the semiconductor fin. Source/drain epitaxial structures are formed in the recesses in the semiconductor fin. Formation of each of the source/drain epitaxial structures comprises performing a first epitaxy growth process to form a bar-shaped epitaxial structure in one of the recesses, and performing a second epitaxy growth process to form a cladding epitaxial layer cladding on the bar-shaped epitaxial structure. The bar-shaped epitaxial structure has a lower phosphorous concentration than the cladding epitaxial layer.

Abstract: According to one embodiment, an illumination device comprises a first mounting board including a plurality of first light emitting elements, a second mounting board including a plurality of second light emitting elements, and a first wiring board including a first wiring line electrically connected to at least one of the plurality of first light emitting elements and the plurality of second light emitting elements. The first mounting board and the second mounting board extend in a first direction and are arranged along a second direction intersecting the first direction. The first wiring board is superposed on the first mounting board and the second mounting board. The first wiring board has rigidity that is lower than rigidity of each of the first mounting board and the second mounting board.

Abstract: A display module package includes a semiconductor chip, a wiring member disposed on the semiconductor chip, including an insulating layer and a wiring layer, and contacting at least a portion of the semiconductor chip, a light emitting device array disposed on the wiring member and including a plurality of light emitting devices disposed on one surface, wherein the wiring member is between the semiconductor chip and the light emitting device, and a molding member disposed on the wiring member, sealing part of the light emitting device array, and having an opening for exposing the plurality of light emitting devices.

Abstract: In an embodiment, a device includes: a molding compound; an integrated circuit die encapsulated in the molding compound; a through via adjacent the integrated circuit die; and a redistribution structure over the integrated circuit die, the molding compound, and the through via, the redistribution structure electrically connected to the integrated circuit die and the through via, the redistribution structure including: a first dielectric layer disposed over the molding compound; a first conductive via extending through the first dielectric layer; a second dielectric layer disposed over the first dielectric layer and the first conductive via; and a second conductive via extending through the second dielectric layer and into a portion of the first conductive via, an interface between the first conductive via and the second conductive via being non-planar.

Abstract: An UV or DUV light-emitting diode package includes: a foundation; a first metal layer, a second metal layer, and third metal layer formed on a top surface of the foundation, wherein the first metal layer and the second metal layer are electrically isolated by a first gap, the third metal layer surrounds the first and second metal layers and is electrically isolated from the first and second metal layers by a second gap; a lens attached to the top surface of the foundation, wherein a cavity is formed between the foundation and the lens; a chip disposed in the cavity, wherein an anode of the chip is electrically connected to the first metal layer and a cathode of the chip is electrically connected to the second metal layer; and a fluid encapsulate, wherein the cavity is fully or partially filled with the fluid encapsulate.

Abstract: Disclosed is a display device that with low power consumption. The display device includes a first thin film transistor having a polycrystalline semiconductor layer in an active area and a second thin film transistor having an oxide semiconductor layer in the active area, wherein at least one opening disposed in a bending area has the same depth as one of a plurality of contact holes disposed in the active area, whereby the opening and the contact holes are formed through the same process, and the process is therefore simplified, and wherein a high-potential supply line and a low-potential supply line are disposed so as to be spaced apart from each other in the horizontal direction, whereas a reference line and the low-potential supply line are disposed so as to overlap each other, thereby preventing signal lines from being shorted.

Abstract: Methods for manufacturing an electronic device are provided. A representative method includes providing a substrate. The substrate has an active layer, a first patterned metal layer passing through a passivation layer to electrically connected to the active layer, a second patterned metal layer passing through an insulating layer to electrically connected to the first patterned metal layer, and a metal layer under the second patterned metal layer. A part of the metal layer does not serve as a portion of a thin film transistor, and the part of the metal layer serves as a portion of a gate line. The method includes providing a carrier substrate supporting a plurality of elements, conducting a testing to the elements, transferring the elements from the carrier substrate to the second patterned metal layer of the substrate, and fixing the elements to the substrate.

Abstract: An optical device includes an LED chip, a visible-light luminescent material, and a near-infrared luminescent material, wherein a luminous power of light emitted by the near-infrared and visible-light luminescent materials in a band of 650-1000 nm under the excitation of the LED chip is A, and a sum of a luminous power of light emitted by the near-infrared and visible-light luminescent materials in a band of 350-650 nm under the excitation of the LED chip and a luminous power of residual light emitted by the LED chip in the band of 350-650 nm after the LED chip excites the near-infrared and visible-light luminescent materials is B, with B/A*100% being 0.1%-10%. According to the implementation where the optical device employs the LED chip to combine the near-infrared luminescent material and the visible-light luminescent material simultaneously.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a semiconductive substrate and an oxidation region formed on the semiconductive substrate. The oxidation region includes a stage with a first width along a horizontal direction. The semiconductor structure further includes a fin formed on a top surface of the stage. A method for forming the semiconductor structure is also provided.

Abstract: A display panel and a display device are provided. The display panel includes a drive substrate, a bonding layer, and multiple light-emitting components. The drive substrate includes multiple sets of pads. Each set of pads includes a first pad and a second pad. The bonding layer is arranged on the multiple sets of pads. Each light-emitting component includes a semiconductor light-emitting layer, a first electrode, and a second electrode. The first electrode and the second electrode are arranged at opposite ends of the semiconductor light-emitting layer. The first electrode is electrically connected to a corresponding first pad through the bonding layer. The second electrode is electrically connected to a corresponding second pad through the bonding layer. The second electrodes of the adjacent light-emitting components are close to each other. The second electrodes close to each other are shorted through the same bonding layer and/or the same second pad.

Abstract: An epitaxial structure adapted to a semiconductor pickup element is provided. The semiconductor pickup element has at least one guiding structure and provided with a pickup portion. The epitaxial structure includes a semiconductor layer corresponding to the pickup portion and capable of being picked up by the semiconductor pickup element. The epitaxial structure also includes at least one alignment structure disposed on the semiconductor layer and corresponding to the at least one guiding structure, so that the epitaxial structure and the semiconductor pickup element are positioned relative to each other. The number of the at least one alignment structure matches the number of the at least one guiding structure.

Abstract: A light-emitting diode (LED) package includes an LED chip on a substrate, an adhesive phosphor film on the LED chip, a cell lens on the adhesive phosphor film, and a lateral reflective layer covering respective lateral surfaces of the LED chip, the adhesive phosphor film, and the cell lens, a lateral surface of the lateral reflective layer being coplanar with a lateral surface of the substrate.

Abstract: A light emitting device includes: a mounting substrate comprising a mounting substrate first surface; a first light emitting element configured to emit light having a first peak wavelength; a second light emitting element configured to emit light having a second peak wavelength longer than the first peak wavelength; a first light-transmissive member; and a first wavelength converting member located on the first light-transmissive member.

Abstract: A package structure includes: a substrate includes a first surface; a semiconductor chip disposed on the first surface; a support disposed on the first surface and surrounding the semiconductor chip comprises an electrical conducting member and penetrating the support; and an optical component disposed on the support and electrically connected to the substrate by the electrical conducting member.

Abstract: A light emitting diode device includes a substrate, a frame, an LED die and a transparent layer. The frame is located on the substrate. The frame and the substrate collectively define a concave portion. The frame has a light reflectivity ranging from 20% to 40%. The LED die is located on the substrate and within the concave portion. The transparent layer is filled into the concave portion and covering the LED die, wherein the LED die has a side-emitting surface and a top-emitting surface, the side-emitting surface has a luminous intensity greater than that of the top-emitting surface.

Abstract: A micro LED structure includes a first micro LED chip having opposite first and second sides, a second micro LED chip adjacent to the first side of the second micro LED chip, a third micro LED chip adjacent to the first side of the first micro LED chip, and optical structures respectively over the first micro LED chip, the second micro LED chip and the third micro LED chip. Each of the first, second and third micro LED chip includes a semiconductor stack, a metal pad and a reflective coating layer. The semiconductor stack includes a first semiconductor layer, an active layer in contact with the first semiconductor layer, and a second semiconductor layer in contact with the active layer. The metal pad is in contact with the first semiconductor layer, and the reflective coating layer is disposed around sidewalls of the semiconductor stack.

Abstract: A light-emitting device comprising a package comprising a light-emitting element comprising a first surface and a second surface opposite to the first surface, a first light-transmissive member arranged on the second surface of the light-emitting element, paired electrodes at the first surface of the light-emitting element, and a first covering member covering the light-emitting element such that the paired electrodes are exposed from the first covering member. The light-emitting device further comprises a light-guiding plate on which the package is placed, and a second covering member arranged on the light-guiding plate and covering laterally the package. The light-emitting device further comprises paired wirings continuously covering the paired electrodes exposed and the first covering members and being connected to the paired electrodes respectively.

Abstract: A glass device including a thin glass substrate which has a glass thickness of 300 ?m or less is enabled to be provided more easily. In a method for manufacturing the glass device, one or more through holes are formed in a glass substrate, and a first wiring on a first surface side of the glass substrate and a second wiring on a second surface side of the glass substrate are electrically connected to each other via the through holes. After the first wiring is provided, the through holes are formed while the glass substrate is being thinned by etching. Then, wirings in the through holes and the second wiring are formed. The thinned glass substrate has a thickness of 50 ?m or more and 300 ?m or less. The through holes have the shape of a truncated cone.

Abstract: A light-emitting device includes a substrate; at least one light-emitting element on or above the substrate; a plate-shaped light-transmissive member having a lower surface that faces an upper surface of the at least one light-emitting element; a covering member that covers a lateral surface of the at least one light-emitting element and a lateral surface of the light-transmissive member; and a light-guiding member that is disposed between the light-emitting element and the light-transmissive member. In a plan view, a first lateral side of an upper surface of the light-transmissive member is outside a first lateral side of the upper surface of the at least one light-emitting element, and a second lateral side of the upper surface of the light-transmissive member is inside a second lateral side of the upper surface of the at least one light-emitting element.

Abstract: A semiconductor light-emitting device includes a substrate, a semiconductor light-emitting element, and a resin member. The substrate includes a base member and a conductive part. The semiconductor light-emitting element is supported on the substrate. The resin member covers at least a portion of the substrate. The base member has a front surface and a back surface that face opposite to each other in a thickness direction. The conductive part includes a front portion formed on the front surface. The semiconductor light-emitting element is mounted on the front portion. The resin member includes a frame-shaped portion surrounding the semiconductor light-emitting element as viewed in the thickness direction, and a front-surface covering portion connected to the frame-shaped portion and covering a portion of the front surface of the base member that is exposed from the front portion.