Abstract: Methods for forming a laminate film on substrate by a plasma-enhanced cyclical deposition process are provided. The methods may include: providing a substrate into a reaction chamber, and depositing on substrate a metal oxide laminate film by alternatingly depositing a first metal oxide film and a second metal oxide film different from the first metal oxide film, wherein depositing the first metal oxide film and the second metal oxide film comprises, contacting the substrate with sequential and alternating pulses of a metal precursor and an oxygen reactive species generated by applying RF power to a reactant gas comprising at least nitrous oxide (N2O).

Abstract: The present disclosure provides a processing method for semiconductor surface defects and a preparation method for semiconductor devices. The processing method for semiconductor surface defects includes: placing a semiconductor device in a plasma processing device, the semiconductor device comprising a semiconductor substrate and deposition layers formed on the surface of the semiconductor substrate, bubbles being formed in the deposition layers; and plasma bombarding the surface of the deposition layer to break the bubbles, so that the surface of the deposition layer is flat.

Abstract: Methods and related systems for filling a gap feature comprised in a substrate are disclosed. The methods comprise a step of providing a substrate comprising one or more gap features into a reaction chamber. The one or more gap features comprise an upper part comprising an upper surface and a lower part comprising a lower surface. The methods further comprise a step of subjecting the substrate to a plasma treatment. Thus, the upper surface is inhibited while leaving the lower surface substantially unaffected. Then, the methods comprise a step of selectively depositing a silicon-containing material on the lower surface.

Abstract: A first layer that includes a metal seed layer, a refractive seed or a refractive dopant is formed on a dielectric substrate. A peg of a near-field transducer is formed on the first layer such that a first surface of the peg is formed on and is in contact with the metal seed. An adhesive layer is formed over the peg using atomic layer deposition. The adhesive layer includes alumina and is 4 nm or less in thickness. A silicon dioxide overcoat is deposited over the adhesive layer. The alumina bonds the silicon dioxide to the peg.

Abstract: The embodiments described herein are directed to a method for mitigating the fringing capacitances generated by patterned gate structures. The method includes forming a gate structure on fin structures disposed on a substrate; forming an opening in the gate structure to divide the gate structure into a first section and a second section, where the first and second sections are spaced apart by the opening. The method also includes forming a fill structure in the opening, where forming the fill structure includes depositing a silicon nitride liner in the opening to cover sidewall surfaces of the opening and depositing silicon oxide on the silicon nitride liner.

Abstract: Methods and techniques for deposition of amorphous carbon films on a substrate are provided. In one example, the method includes depositing an amorphous carbon film on an underlayer positioned on a susceptor in a first processing region. The method further includes implanting a dopant or the inert species into the amorphous carbon film in a second processing region. The implant species, energy, dose & temperature in some combination may be used to enhance the hardmask hardness. The method further includes patterning the doped amorphous carbon film. The method further includes etching the underlayer.

Abstract: A method for forming a semiconductor structure includes the following steps: providing a substrate having a trench in a surface; forming an isolation layer on the surface of the substrate, the isolation layer covering a side wall and a bottom wall of the trench; pretreating the isolation layer such that an initial oxide layer is formed on a surface of the isolation layer; forming an advanced oxide layer on a surface of the initial oxide layer with an atomic layer deposition process; and forming a dielectric layer on a surface of the advanced oxide layer with a spin-on dielectrics (SOD) process such that the dielectric layer fills the trench.

Abstract: Described herein are methods and apparatuses for filling semiconductor substrate structures with conductive material. The methods involve depositing multi-layer bulk metal films in structures with one or more deposition conditions changed when transitioning from layer-to-layer. The methods result in high fill quality, high throughput, low precursor consumption, and low roughness. Multi-station chambers to perform the methods are also provided.

Abstract: A method of forming an integrated circuit structure includes forming a first source/drain contact plug over and electrically coupling to a source/drain region of a transistor, forming a first dielectric hard mask overlapping a gate stack, recessing the first source/drain contact plug to form a first recess, forming a second dielectric hard mask in the first recess, recessing an inter-layer dielectric layer to form a second recess, and forming a third dielectric hard mask in the second recess. The third dielectric hard mask contacts both the first dielectric hard mask and the second dielectric hard mask.

Abstract: The embodiments described herein are directed to a method for mitigating the fringing capacitances generated by patterned gate structures. The method includes forming a gate structure on fin structures disposed on a substrate; forming an opening in the gate structure to divide the gate structure into a first section and a second section, where the first and second sections are spaced apart by the opening. The method also includes forming a fill structure in the opening, where forming the fill structure includes depositing a silicon nitride liner in the opening to cover sidewall surfaces of the opening and depositing silicon oxide on the silicon nitride liner.

Abstract: Provided are a substrate processing method and a substrate processing apparatus for forming a low-resistance metal-containing nitride film. The substrate processing method includes: a step of providing a substrate in a processing container; a step of forming a metal-containing nitride film on the substrate by repeating supplying an organic metal-containing gas and a nitrogen-containing gas alternately for a first predetermined number of cycles; a step of modifying the metal-containing nitride film by generating plasma in the processing container; and a step of repeating the step of forming the metal-containing nitride film and the step of modifying the metal-containing nitride film for a second predetermined number of cycles.

Abstract: A method for improving a bias temperature instability of a SiO2 layer comprises exposing the SiO2 layer to atomic hydrogen.

Abstract: Effective use is achieved of a region in a proximity of a joining plane of semiconductor substrates in a semiconductor device including a stacked semiconductor substrate in which multilayer wiring layers of a plurality of semiconductor substrates are electrically connected to each other. The stacked semiconductor substrate includes plural semiconductor substrates on each of which a multilayer wiring layer is formed. In this stacked semiconductor substrate, the multilayer wiring layers are joined together and electrically connected to each other. In the proximity of a joining plane of the plurality of semiconductor substrates, a conductor is formed. This conductor is formed such that it is electrified in a direction of the joining plane.

Abstract: Provided is a pixel defining layer of an organic light-emitting diode display panel. The pixel defining layer includes: an insulating transparent cladding layer; and a reflecting layer in the transparent cladding layer, wherein the reflecting layer is configured to reflect light emitted from a light-emitting layer of the organic light-emitting diode display panel. Organic light-emitting diode display panels and methods for manufacturing an organic light-emitting diode display panel are also provided.

Abstract: This disclosure describes a micromechanical device comprising a first device part and a second device part. One of the first and second device parts is a mobile rotor and the other of the first and second device parts is a fixed stator. The micromechanical device further comprises a motion limiter which extends from the first device part to the second device part. The motion limiter comprises an elongated lever, and the motion limiter is configured to bring a stopper into contact with a counter-structure by rotating the elongated lever.

Abstract: The present invention provides a product with incorporated operation display panel that further improves visibility at the time of light emission. The product with incorporated operation display panel includes a transparent conductive sheet, a display panel with a touch sensor furnished at least with light emitting elements consisting of light emitting elements arranged in two dimensions and being the product with incorporated operation display panel furnished with a thin layer that covers the total or a part of the front surface of a display panel, and a transparent substrate that forms a light guiding path is disposed at an opening between a transparent conductive sheet and a thin layer, or at an opening between a transparent conductive sheet and a light emitting device array substrate. The transparent base has micropores provided in a resin base material made of a transparent resin, and the micropores are formed by a lattice-like louver.

Abstract: There is provided a technique that includes: forming an oxide film containing an atom X of a precursor on a substrate by performing a cycle a predetermined number of times. The cycle including non-simultaneously performing: (a) forming a first layer containing a component in which a first group is bonded to the atom X on the substrate by supplying the precursor having a molecular structure in which the first and second groups are bonded to the atom X, to the substrate, the first group containing an alkoxy group, and the second group containing at least one of an amino group, an alkyl group, a halogeno group, a hydroxy group, a hydro group, an aryl group, a vinyl group, and a nitro group; and (b) forming a second layer containing the atom X by supplying an oxidizing agent to the substrate to oxidize the first layer.

Abstract: A film having filling capability of a patterned recess on a surface of a substrate is deposited by forming a viscous material in a gas phase by striking a plasma in a chamber filled with a volatile precursor that can be polymerized within certain parameter ranges which include a partial pressure of the precursor during a plasma strike and substrate temperature.

Abstract: There is provided a technique that includes (a) forming a first film having a first thickness on an underlayer by supplying a first process gas not including oxidizing gas to a substrate, wherein the first film contains silicon, carbon, and nitrogen and does not contain oxygen, and the underlayer is exposed on a surface of the substrate and is at least one selected from the group of a conductive metal-element-containing film and a nitride film; and (b) forming a second film having a second thickness larger than the first thickness on the first film by supplying a second process gas including oxidizing gas to the substrate, wherein the second film contains silicon, oxygen, and nitrogen, and wherein in (b), oxygen atoms derived from the oxidizing gas and diffuse from a surface of the first film toward the underlayer are absorbed by the first film and the first film is modified.

Abstract: Methods of forming a material layer according to some embodiments of the inventive concept may include a deposition cycle including providing an adsorption inhibitor on a substrate, purging an excess amount of the adsorption inhibitor, providing a metal precursor on the substrate, purging an excess amount of the metal precursor, and supplying a reactant to form a material layer on the substrate. The adsorption inhibitor may include a group 15 element or a group 16 element.