Abstract: Methods of depositing a film using a plasma enhanced process are described. The method comprises providing continuous power from a power source connected to a microwave plasma source in a process chamber and a dummy load, the continuous power split into pulses having a first time and a second time defining a duty cycle of a pulse. The continuous power is directed to the microwave plasma source during the first time, and the continuous power is directed to the dummy load during the second time.

Abstract: A method of depositing nitride films is disclosed. Some embodiments of the disclosure provide a PEALD process for depositing nitride films which utilizes separate reaction and nitridation plasmas. In some embodiments, the nitride films have improved growth per cycle (GPC) relative to films deposited by thermal processes or plasma processes with only a single plasma exposure. In some embodiments, the nitride films have improved film quality relative to films deposited by thermal processes or plasma processes with only a single plasma exposure.

Abstract: Methods and systems for filling a recess on a surface of a substrate with carbon-containing material are disclosed. Exemplary methods include forming a first carbon layer within the recess, etching a portion of the first carbon layer within the recess, and forming a second carbon layer within the recess. Structures formed using the method or system are also disclosed.

Abstract: A method of forming a boron-based film mainly containing boron on a substrate includes forming, on the substrate, an adhesion layer containing an element contained in a surface of the substrate and nitrogen, and subsequently, forming the boron-based film on the adhesion layer.

Abstract: Methods of forming an oxide layer over a semiconductor substrate are provided. The method includes forming a first oxide containing portion of the oxide layer over a semiconductor substrate at a first growth rate by exposing the substrate to a first gas mixture having a first oxygen percentage at a first temperature. A second oxide containing portion is formed over the substrate at a second growth rate by exposing the substrate to a second gas mixture having a second oxygen percentage at a second temperature. A third oxide containing portion is formed over the substrate at a third growth rate by exposing the substrate to a third gas mixture having a third oxygen percentage at a third temperature. The first growth rate is slower than each subsequent growth rate and each growth rate subsequent to the second growth rate is within 50% of each other.

Abstract: A method of nitridation includes cyclically performing the following steps in situ within a processing chamber at a temperature less than about 400° C.: treating an unreactive surface of a substrate in the processing chamber to convert the unreactive surface to a reactive surface by exposing the unreactive surface to an energy flux, and nitridating the reactive surface using a nitrogen-based gas to convert the reactive surface to a nitride layer including a subsequent unreactive surface.

Abstract: Embodiments of the semiconductor processing methods to form low-? films on semiconductor substrates are described. The processing methods may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-containing precursor that has at least one vinyl group. The methods may further include generating a deposition plasma in the substrate processing region from the deposition precursors. A silicon-and-carbon-containing material, characterized by a dielectric constant (? value) less than or about 3.0, may be deposited on the substrate from plasma effluents of the deposition plasma.

Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency above 15 MHz. The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.0.

Abstract: A method of manufacturing a semiconductor device includes forming a preliminary lower electrode layer on a substrate, the preliminary lower electrode layer including a niobium oxide; converting at least a portion of the preliminary lower electrode layer to a first lower electrode layer comprising a niobium nitride by performing a nitridation process on the preliminary lower electrode layer; forming a dielectric layer on the first lower electrode layer; and forming an upper electrode on the dielectric layer.

Abstract: PECVD methods for depositing a film at a low deposition rate comprising intermittent activation of the plasma are disclosed. The flowable film can be deposited using at least a polysilane precursor and a plasma gas. The deposition rate of the disclosed processes may be less than 500 ?/min.

Abstract: A plasma processing method that is executed by a plasma processing apparatus including a processing container containing a target substrate, a plurality of plasma sources, and a gas supply apparatus for supplying gas includes: supplying the gas from the gas supply apparatus into the processing container; individually controlling intensity of power introduced from each of the plurality of plasma sources into the processing container; and generating plasma of the gas by the intensity of the power introduced from each of the plurality of plasma sources and depositing a desired film on a second surface of the target substrate that is an opposite surface of a first surface of the target substrate so as to apply desired film stress to a film on the first surface.

Abstract: Exemplary semiconductor processing methods to clean a substrate processing chamber are described. The methods may include depositing a dielectric film on a first substrate in a substrate processing chamber, where the dielectric film may include a silicon-carbon-oxide. The first substrate having the dielectric film may be removed from the substrate processing chamber, and the dielectric film may be deposited on at least one more substrate in the substrate processing chamber. The at least one more substrate may be removed from the substrate processing chamber after the dielectric film is deposited on the substrate. Etch plasma effluents may flow into the substrate processing chamber after the removal of a last substrate having the dielectric film. The etch plasma effluents may include greater than or about 500 sccm of NF3 plasma effluents, and greater than or about 1000 sccm of O2 plasma effluents.

Abstract: A method including: a plasma contact step including supplying treatment gas including a reactant gas into a chamber, activating a reactant component included in the treatment gas by generating plasma from the reactant component by applying high-frequency power, and bringing the treatment gas including the reactant component activated into contact with the surface of the substrate, in which in the plasma contact step, a first plasma generation condition in which stable plasma is generated by applying high-frequency power of a first power level while supplying treatment gas of a first concentration is changed to a second plasma generation condition in which a desired thin film is obtained by performing at least one of increasing the high-frequency power to a second power level and gradually decreasing the treatment gas to a second concentration, and of gradually increasing the high-frequency power to the second power level, and abnormal electrical discharge is suppressed.

Abstract: A method of forming a microelectronic device comprises treating a base structure with a first precursor to adsorb the first precursor to a surface of the base structure and form a first material. The first precursor comprises a hydrazine-based compound including Si—N—Si bonds. The first material is treated with a second precursor to covert the first material into a second material. The second precursor comprises a Si-centered radical. The second material is treaded with a third precursor to covert the second material into a third material comprising Si and N. The third precursor comprises an N-centered radical. An ALD system and a method of forming a seal material through ALD are also described.

Abstract: A method for processing a substrate includes: (a) exposing a substrate with a pattern formed on a surface thereof to a first reactive species in a chamber, thereby adsorbing the first reactive species onto the surface of the substrate; (b) exposing the substrate to plasma formed by a second reactive species in the chamber, thereby forming a film on the surface of the substrate; and (c) repeating a processing including (a) and (b) two or more times while changing a residence amount of the first reactive species at a time of starting (b).

Abstract: Exemplary processing methods may include flowing a first deposition precursor into a substrate processing region to form a first portion of an initial compound layer. The first deposition precursor may include an aldehyde reactive group. The methods may include removing a first deposition effluent including the first deposition precursor from the substrate processing region. The methods may include flowing a second deposition precursor into the substrate processing region. The second deposition precursor may include an amine reactive group, and the amine reactive group may react with the aldehyde reactive group to form a second portion of the initial compound layer. The methods may include removing a second deposition effluent including the second deposition precursor from the substrate processing region. The methods may include annealing the initial compound layer to form an annealed carbon-containing material on the surface of the substrate.

Abstract: A deposition method according to one aspect of the present disclosure includes performing multiple execution cycles serially. Each of the multiple execution cycles includes: supplying a raw material gas into a process chamber; and supplying a reactant gas that reacts with the raw material gas. Among the multiple execution cycles, at least one execution cycle includes adjusting a pressure in the process chamber without supplying the raw material gas, and the adjusting of the pressure is performed prior to the supplying of the raw material gas.

Abstract: Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may also include forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen. The plasma may be formed at a frequency above 15 MHz. The methods may also include depositing a silicon nitride material on the substrate.

Abstract: A method of forming an integrated circuit structure includes forming a first source/drain contact plug over and electrically coupling to a source/drain region of a transistor, forming a first dielectric hard mask overlapping a gate stack, recessing the first source/drain contact plug to form a first recess, forming a second dielectric hard mask in the first recess, recessing an inter-layer dielectric layer to form a second recess, and forming a third dielectric hard mask in the second recess. The third dielectric hard mask contacts both the first dielectric hard mask and the second dielectric hard mask.

Abstract: There is provided a technique that includes: forming an oxide film containing a central atom X of a precursor on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer containing a component in which a first group is bonded to the central atom X on the substrate by supplying the precursor having a molecular structure in which the first group and a second group are bonded to the central atom X and having a bonding energy between the first group and the central atom X that is higher than a bonding energy between the second group and the central atom X, to the substrate; and (b) forming a second layer containing the central atom X by supplying an oxidizing agent to the substrate to oxidize the first layer, wherein in (a), the precursor is supplied under a condition in which the second group is desorbed and the first group is not desorbed from the central atom X contained in the precursor and the central atom X is adsorbed on