Abstract: A method and compounds for inhibiting and controlling corrosion is disclosed. The method is particularly effective at inhibiting or preventing corrosion of ferrous-based metals in contact with aqueous systems such as cooling water systems. The method comprises introducing into the aqueous system a compound of the general formula: ##STR1## wherein R is hydrogen, alkyl, aryl, substituted alkyl or substituted aryl; R' and R" are each independently hydrogen, C.sub.1-4 alkyl or C.sub.1-4 substituted alkyl; Z is O, S, NH, or NR, where R is as described above; n is a positive integer greater than 1; f is a positive integer; and M is hydrogen, a water soluble cation (e.g., NH.sub.4.sup.+, alkali metal), or a C.sub.1 -C.sub.3 alkyl group.

Abstract: Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

Abstract: The present invention discloses a method for in-situ cleaning a reactive ion etching (RIE) chamber after a silicon nitride etching process by maintaining a vacuum and a radial frequency power in the chamber while flowing a chlorine gas into the chamber at a sufficient flow rate. The chlorine gas cleaning step can be integrated into the process recipe for the etching process without significantly affecting the cycle time and the yield of the process.

Abstract: A low temperature method for preparing GaN single crystals for use, for example, for blue light emitting diodes and laser diodes, comprises using sodium as a flux in a reaction system containing only gallium, sodium and nitrogen, e.g., by thermally decomposing sodium azide in a closed reaction zone containing gallium or by reacting gallium with nitrogen supplied from a tank in a closed reaction zone containing sodium, optionally in the presence of a catalytic amount of an alkaline earth metal.

Abstract: The method for wet-gunning a castable refractory composition includes the steps of (a) preparing a cement-free, castable refractory composition comprising 70-98 weight % of refractory aggregate having a particle size of 10 mm or less, 2-30 weight % of ultrafine refractory powder having a particle size of 10 .mu.m or less, and 0.01-1.0 weight % (outer percentage) of a dispersing agent, and further a thickener (in the case of factory premixing); (b) premixing the cement-free, castable refractory composition with water in situ or in a factory to provide an in-situ premixed or factory-premixed, water-containing refractory material having a castable fluidity; (c) conveying the in-situ premixed or factory-premixed, water-containing refractory material to a gunning nozzle by a pump; (d) adding 0.

Abstract: A method of etching of indium phosphide (InP) semiconductor materials using methyl chloride CH.sub.3 Cl and phosphine PH.sub.3 in a low pressure MOCVD reactor is provided. Etching of InP using CH.sub.3 Cl as an etchant and PH.sub.3 to prevent thermal decomposition of the etched surface gives excellent etching morphology, and a maximum etching rate of 0.75 mm/hr for the CH.sub.3 Cl flow rates studied. A PH.sub.3 flow rate.ltoreq.40 SCCM and etching temperature.gtoreq.610.degree. C. provided excellent etch morphology, without formation of pits, independent of the CH.sub.3 Cl flow rate. A controllable etching rate was obtained for a coated susceptor when deposits are primarily InP. Thus this method of CH.sub.3 Cl etching is suitable for multiple growth and etching steps using an MOCVD reactor. By controlling the PH.sub.

Abstract: A boron-nitride-silicate-containing sealant having good resistance to attack by molten metal such as molten zinc and a method for coating the sealant on a substrate.

Abstract: A silicon wafer is set in a processing bath and an HF water solution and ozone water are respectively supplied from an HF line and ozone water line into the processing bath via an HF valve and ozone water valve to create a mixture. The mixture contains an HF water solution with a concentration of 0.01% to 1% and ozone water with a concentration of 0.1 ppm to 20 ppm, has substantially the same etching rate for silicon and for silicon oxide film and is used at a temperature in the range of 10.degree. to 30.degree. C. The silicon wafer and the silicon oxide film formed on part of the surface of the wafer can be simultaneously cleaned by use of the above mixture.

Abstract: Methods are provided to at least slow the dissolution of silica in an aqueous environment. In the subject methods, the silica surface is contacted with a multivalent metal cation capable of complexing with oxygen atoms present on the silica surface, where contacting is preferably accomplished by introducing a source of the multivalent metal cation into the aqueous environment. The subject methods find particular use in the inhibition of the dissolution of silica comprising neutron poisoning materials employed in the storage of spent nuclear fuel.

Abstract: A method in a plasma processing chamber for improving oxide-to-nitride selectivity while etching a borophosphosilicate glass (BPSG)-containing layer to create a self-aligned contact on a semiconductor substrate. The (BPSG)-containing layer is disposed on a SiN layer and into a via formed through the SiN layer. The method includes placing the substrate into the plasma processing chamber, and flowing an etchant source gas into the plasma processing chamber. The etchant source gas includes C.sub.4 F.sub.8 and an additive gas other than carbon monoxide (CO). The additive gas includes molecules having both oxygen atoms and carbon atoms in a 1:1 ratio. The method further includes exciting the etchant source gas with a radio frequency (RF) power source having a frequency of 13.56 MHz to strike a plasma from the etchant source gas, thereby etching at least partially through the BPSG-containing layer.

Abstract: A plating jig for plating a corrugated tube includes a linear center rod, a circular rod helically formed with the center rod as its center axis, support rods each having a base fixed to the center rod and an end extended in the radial direction of the circular rod, and suspensions provided at the ends of the support rods respectively, extended in the same direction as the center rod and connected to the one-end side outer circumferential surface of the circular rod.

Abstract: Cleaning solutions for semiconductor devices comprise tetramethyl ammonium hydroxide, acetic acid, and water. Methods of removing contaminants from semiconductor devices comprise contacting the semiconductor devices with cleaning solutions to remove the contaminants from the semiconductor devices.

Abstract: Corrosion of iron-containing metal surfaces in a hydrocarbon fluid having a temperature of from about 175.degree. C. to about 400.degree. C. and containing a corrosive amount of naphthenic acid is inhibited by adding to the fluid or to a feed therefor, in a total additive amount sufficient to effect corrosion inhibition in said fluid, one or more thiophosphorus compound, a salt thereof, an alkyl or aryl ester thereof, an isomer thereof, or some combination of the foregoing, thereby to effect inhibition of naphthenic acid induced corrosion in the fluid.

Abstract: A simple and rapid process for synthesizing (Pb,La)(Nb,Sn,Zr,Ti)O.sub.3 precursor solutions and subsequent ferroelectric thin films and powders of the perovskite phase of these materials has been developed. This process offers advantages over standard methods, including: rapid solution synthesis (<10 minutes), use of commercially available materials, film production under ambient conditions, ease of lanthanum dissolution at high concentrations, and no heating requirements during solution synthesis. For lanthanum-doped ferroelectric materials, the lanthanum source can be added with total synthesis time less than 10 minutes. Films and powders are crystallized at approximately 650.degree. C. and exhibit ferroelectric properties comparable to films and powders produced by other techniques which require higher crystallization temperatures.

Abstract: Disclosed is a method for etching the inside of a tungsten CVD reaction room, in which tungsten deposited on the inside of the reaction room by a film-forming gas when a tungsten CVD reaction is conducted is removed by plasma, and which has the steps of: exhausting a remainder of the film-forming gas in the reaction room; and then supplying a high-frequency electric power into the reaction room while keeping a predetermined degree of vacuum in the reaction room and leading a mixing gas of sulfur hexafluoride and oxygen into the reaction room to generate the plasma.

Abstract: A process for depositing catalytically active platinum metal layers from an ionogenic, acidic, platinum metal ions-containing solution which further contains sulfonic acid. This activation leads to more uniform catalyst layers with greater surfaces which are catalytically more efficient. The process according to the invention can be implemented in any chemical process utilizing platinum metal catalysts, e.g. chemical synthesis, environment applications or metallization of surfaces.

Abstract: A method of forming aluminum contacts of submicron dimensions wherein, after formation of both vias and line openings in a silicon oxide layer, a metal stop layer is deposited, followed by deposition of aluminum. Alternatively, the metal stop layer is deposited prior to forming the vias and line openings. The excess aluminum is removed by chemical-mechanical polishing, the stop layer providing high selectivity to the chemical mechanical polishing. The stop layer is then removed. The resultant silicon oxide-aluminum surface is planar and undamaged by the chemical-mechanical polishing step.

Abstract: Disclosed are a process for hot-dip coating a steel material with a molten aluminum alloy according to a one-stage coating method using a flux which comprises removing an oxide layer on a steel material surface, conducting activating treatment, then coating a chloride flux solution and dipping the steel material in a molten aluminum alloy coating bath floated a fluoride-containing flux, thereby coating the steel material surface with aluminum alloy, or comprises removing an oxide layer on a steel material surface, adjusting surface roughness, conducting activating treatment and dipping the steel material in a molten Al--Zn--Si alloy or Al--Si alloy coating bath floated a flux added an iron component, thereby coating the steel material surface with Al--Zn--Si alloy or Al--Si alloy to adhere a large amount thereof and a aluminum alloy coating bath.

Abstract: The invention provides a method of fabricating corrosion free metal lines. The method involves forming a thin polymeric passivation layer 30 over the metal layer 20 immediately after the metal deposition and before any photolithographic or etching processes. The polymeric passivation layer 30 is formed using a F-containing gas plasma treatment. The passivation layer prevents corrosion of the metal layer before a metal etch. The passivation layer is preferably composed of a polymeric of C, O, and F and has a thickness in a range of between about 40 and 80 .ANG.. The passivation layer is formed using a F-containing plasma treatment at a power of between 225 and 275 W, a pressure between about 80 and 120 mtorr, a CHF.sub.3 flow between about 40 and 60 sccm and for a duration between about 10 to 30 seconds. Following this, the metal layer is patterned using photo and etch steps.

Abstract: An electrically chargeable dielectric coating powder and a triboelectric coating process for applying the powder to wood substrates are described. The coating powder is a mass of finely divided, heat fusible dielectric plastic material having an average particle size (Mv) of between 30 and 45 microns and a particle size distribution (all percents defined in weight percent) of:95%-100% smaller than 88 microns,5%-15% smaller than 15.56 microns and0%-6% smaller than 11 microns.Preferably the coating powder has 0% larger than 88 microns and an Mv=about 30-40, preferably 35-40 microns. More preferably the particle distribution further includes10%-15% smaller than 15.56 microns and4%-6% smaller than 11 microns, andan Mv of between about 35 and 36 microns. Most preferably the particle distribution further includes:about 11.5% smaller than 15.56 microns andabout 4.3% smaller than 11 microns, andan Mv of about 35.9. Preferably the powder is a thermosetting resin composition.