Abstract: A wireless communication module with improved performance and a mobile object that is equipped with the wireless communication module with the improved performance are provided. The mobile object is equipped with a wireless communication module. The wireless communication module includes a substrate, a first element, and a second element. The substrate includes ground layers. The first element is arranged on the substrate and amplifies an input RF signal. The second element is arranged on the substrate and different from the first element. Each of the ground layers has a groove formed between the first element and the second element.

Abstract: A method for the contacting of electrodes with conductor tracks by means of a conductive paste and/or adhesive-coated conductive fiber composites is provided. Furthermore, an electronic component whose electrodes are connected by means of a conductive paste and/or adhesive-coated conductive fiber composites is provided.

Abstract: A method includes depositing an etch stop layer over a non-insulator structure and a dielectric layer over the etch stop layer; etching the dielectric layer to form a first hole in the dielectric layer; deepening the first hole into the etch stop layer such that the non-insulator structure is exposed at a bottom of the deepened hole; after the non-insulator structure is exposed, performing a cleaning operation to remove etch byproducts from the deepened first hole, wherein the cleaning operation results in lateral recesses laterally extending from a bottom portion of the deepened first hole into the etch stop layer; depositing a first diffusion barrier layer into the deepened first hole until the lateral recesses are overfilled; depositing a second diffusion barrier layer over the first diffusion barrier layer; and depositing one or more conductive layers over the second diffusion barrier layer.

Abstract: The present disclosure provides a display module and an electronic apparatus. The display module includes: a flexible substrate having: a first surface configured to form a displaying structure, and a second surface opposite to the first surface; and a protective part located on the second surface and having a supporting portion. The flexible substrate includes: a substrate body having a first subsurface which is a portion of the second surface corresponding to the substrate body; and a bent portion located at at least one side of the substrate body, bent towards the first subsurface of the substrate body, and having a second subsurface which is a portion of the second surface corresponding to the bent portion. The second subsurface is supported by the supporting portion such that a radius of curvature of the bent portion : is not less than a minimal radius of curvature which the flexible substrate is capable of withstanding.

Abstract: Provided is a display device including: a structure including a display area and a peripheral area surrounding the display area; and an inorganic encapsulation thin film disposed on the display and peripheral areas. The peripheral area includes at least one inorganic surface portion having a closed shape continuously.

Abstract: A semiconductor device includes a lower insulating layer formed on a primary surface of a semiconductor substrate; a sealing layer formed in contact with a top surface of the lower insulating layer; and a conductive member including a first conductive member formed on the sealing layer and having a first film thickness and a second conductive member formed on the sealing layer in contact with a first conductive member and having a second film thickness that is smaller than the first film thickness.

Abstract: A component semiconductor structure having a semiconductor layer, which has a front side and a back side, at least one integrated circuit being formed on the front side and a first oxide layer being formed on the back side, a monolithically formed semiconductor body having a top surface and a back surface being provided, and a second oxide layer being formed on the back surface, and the two oxide layers being integrally connected to each other, and a sensor region formed between the top surface and the back surface and having a three-dimensional isotropic Hall sensor structure being disposed in the semiconductor body, the Hall sensor structure extending from a buried lower surface up to the top surface, and at least three first highly doped semiconductor contact regions being formed on the top surface and at least three second highly doped semiconductor contact regions being formed on the lower surface.

Abstract: A display device is disclosed. In one aspect, the display device includes a flexible substrate capable of being bent in a first direction and an insulating layer including a first opening pattern positioned on the flexible substrate and extending in a second direction crossing the first direction.

Abstract: A photoelectric device includes a first photoelectric conversion layer including a heterojunction that includes a first p-type semiconductor and a first n-type semiconductor, a second photoelectric conversion layer on the first photoelectric conversion layer and including a heterojunction that includes a second p-type semiconductor and a second n-type semiconductor. A peak absorption wavelength (?max1) of the first photoelectric conversion layer and a peak absorption wavelength (?max2) of the second photoelectric conversion layer are included in a common wavelength spectrum of light that is one wavelength spectrum of light of a red wavelength spectrum of light, a green wavelength spectrum of light, a blue wavelength spectrum of light, a near infrared wavelength spectrum of light, or an ultraviolet wavelength spectrum of light, and a light-absorption full width at half maximum (FWHM) of the second photoelectric conversion layer is narrower than an FWHM of the first photoelectric conversion layer.

Abstract: Disclosed are light emitting modules and automobile illumination devices including the same. The light emitting module comprises a module substrate, a light emitting device on the module substrate, and a light guide structure apart from the module substrate and in plan view surrounding the light emitting device. The light emitting device comprises a first pixel and a second pixel each including a light emitting diode (LED) chip that emits light whose wavelength falls within a range of blue color or ultraviolet ray, and a wavelength conversion material on a top surface of at least one of the first and second pixels.

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes a stack structure on the substrate. The stack structure includes a first insulating material and a second insulating material that is on the first insulating material. The semiconductor device includes a spacer that extends from a sidewall of the first insulating material of the stack structure to a portion of a sidewall of the second insulating material of the stack structure. Moreover, the semiconductor device includes a conductive line that is on the spacer. Methods of forming semiconductor devices are also provided.

Abstract: The magnetoresistance effect device includes: a magnetoresistance effect element that includes a first magnetization free layer, a magnetization fixed layer or a second magnetization free layer, and a spacer layer interposed between the first magnetization free layer and the magnetization fixed layer or the second magnetization free layer; and a magnetic material part that applies a magnetic field to the magnetoresistance effect element, wherein the magnetic material part is arranged to surround an outer circumference of the magnetoresistance effect element in a plan view in a stacking direction L of the magnetoresistance effect element.

Abstract: Integrated circuits, wafer level integrated III-V device and CMOS driver device packages, and methods for fabricating products with integrated III-V devices and silicon-based driver devices are provided. In an embodiment, an integrated circuit includes a semiconductor substrate, a plurality of transistors overlying the semiconductor substrate, and an interlayer dielectric layer overlying the plurality of transistors with a metallization layer disposed within the interlayer dielectric layer. The plurality of transistors and the metallization layer form a gate driver circuit. The integrated circuit further includes a plurality of vias disposed through the interlayer dielectric layer, a gate driver electrode coupled to the gate driver circuit, a III-V device electrode overlying and coupled to the gate driver electrode, and a III-V device overlying and coupled to the III-V device electrode.

Abstract: A method of forming a semiconductor device structure comprises forming a stack structure comprising stacked tiers. Each of the stacked tiers comprises a first structure comprising a first material and a second structure comprising a second, different material longitudinally adjacent the first structure. A patterned hard mask structure is formed over the stack structure. Dielectric structures are formed within openings in the patterned hard mask structure. A photoresist structure is formed over the dielectric structures and the patterned hard mask structure. The photoresist structure, the dielectric structures, and the stack structure are subjected to a series of material removal processes to form apertures extending to different depths within the stack structure. Dielectric structures are formed over side surfaces of the stack structure within the apertures. Conductive contact structures are formed to longitudinally extend to bottoms of the apertures.

Abstract: Systems, apparatuses, and methods related to epitaxial growth on semiconductor structures are described. An apparatus may include a working surface of a substrate material and a storage node connected to an active area of an access device on the working surface. The apparatus may also include a material epitaxially grown over the storage node contact to enclose a non-solid space between the storage node contact and passing sense lines.

Abstract: A transparent display substrate, a manufacturing method thereof and a transparent display panel are provided. The transparent display substrate includes: a base substrate; a plurality of sub-pixels arranged on the substrate, wherein each of the plurality of sub-pixels comprising a light emitting region and a first transparent region, and the light emitting region being provided with an organic light emitting diode (OLED); a driving circuit, located in each of the plurality of sub-pixels and configured to drive the OLED to emit light, the driving circuit comprising a capacitor disposed in the first transparent region.

Abstract: Provided is a display device including: a structure including a display area and a peripheral area surrounding the display area; and an inorganic encapsulation thin film disposed on the display and peripheral areas. The peripheral area includes at least one inorganic surface portion having a closed shape continuously.

Abstract: A base substrate include a first substrate (110) having a first principal surface (110a) and a second principal surface (110b), and a first wiring member placed over the first or second principal surface. A pixel substrate includes a second substrate (201) having a third principal surface (201a) and a fourth principal surface (201b), a plurality of light-emitting elements (202) mounted over the third principal surface, a driver IC (205) mounted over the third principal surface, an external connection terminal mounted over the third principal surface, and a second wiring member (206) placed on the third or fourth principal surface. The driver IC drives the plurality of light-emitting elements. The external connection terminal receives an input signal that is supplied from outside the pixel substrate. The second substrate (201) is disposed to be stacked on top of the first substrate (110) so that the first principal surface and the fourth principal surface face each other.

Abstract: An opto-electronic High Electron Mobility Transistor (HEMT) may include a current channel including a two-dimensional electron gas (2DEG). The opto-electronic HEMT may further include a photoelectric bipolar transistor embedded within at least one of a source and a drain of the HEMT, the photoelectric bipolar transistor being in series with the current channel of the HEMT.

Abstract: A location of a center of pressure is determined in two-dimensions by a multi-layer sensor, which has a first sensing layer with a first sensing area and a second sensing layer with a second sensing area. The first sensing area includes one or more first sensing cells, and the second sensing area includes one or more second sensing cells. The first and second sensing areas overlap in plan view. Each of the first and second sensing cells can be respectively defined by a set of linearly-varying sensing aperture patterns. In each of the first and second sensing cells, a combination of the respective set of linearly-varying sensing aperture patterns forms a uniform sensing aperture pattern. The location of the center of pressure can be determined using a maximum of four output signals from the multi-layer sensor.